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31. 发明专利

JP2008124486A Method and apparatus for manufacturing magnetoresistive multilayer film 有权
标题翻译：用于制造磁致伸缩膜的方法和装置
公开(公告)号：JP2008124486A
公开(公告)日：2008-05-29
申请号：JP2007322755
申请日：2007-12-14
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： DAVID JULIANT JAYAPURAUIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA
IPC分类号： H01L43/12 , C23C14/34 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a practical manufacturing technology for effectively reducing interlayer coupling in a magnetoresistive multilayer film structure.
SOLUTION: A magnetoresistive multilayer film is manufactured, with a flow rate of a gas of an element having a larger atomic number than that of argon set at 10% or more, by using an apparatus for manufacturing the magnetoresistive multilayer film having: a vacuum vessel 3 having an exhaust system 31 connected thereto; a substrate holder 32 installed in the vacuum vessel 3 for holding a substrate 1 for depositing a thin film composed of an antiferromagnetic layer; a rotation mechanism 321 for rotating the substrate holder 32; a cathode 33 for generating discharge, which is disposed with the cathode surface inclined to the substrate holder surface; a gas introduction system 37 for introducing into the vacuum vessel 3 gas having a larger atomic number than that of argon.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于有效地减少磁阻多层膜结构中的层间耦合的实际制造技术。解决方案：通过使用用于制造磁阻多层膜的装置，制造具有比设定在10％以上的原子序数大的元素的气体流量设定为10％以上的磁阻多层膜，其具有：具有与其连接的排气系统31的真空容器3; 安装在真空容器3中的基板保持器32，用于保持用于沉积由反铁磁层构成的薄膜的基板1; 用于旋转衬底支架32的旋转机构321; 用于产生放电的阴极33，其被设置为阴极表面倾斜于衬底保持器表面; 气体引入系统37，用于将比原子序数大于氩的原子数大的气体引入真空容器3。版权所有（C）2008，JPO＆INPIT

32. 发明专利

JP2006080116A Magnetoresistive effect element and its manufacturing method 有权
标题翻译：磁电效应元件及其制造方法
公开(公告)号：JP2006080116A
公开(公告)日：2006-03-23
申请号：JP2004259280
申请日：2004-09-07
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/08 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/10 , H01L43/12
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which is superior in MR ratio and of which mass-productivity and practicality are improved, and to provide its manufacturing method. SOLUTION: The magnetoresistive effect element (TMR element 10) has a lamination structure (TMR element 12) which is formed of a pair of ferromagnetic layers and a barrier layer located at the middle position between them. At least one ferromagnetic layer is provided with such a portion in contact with the barrier layer that has an amorphous state, and the barrier layer is an MgO layer with a single crystal structure. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种磁阻效应元件，该磁阻效应元件在MR比方面优异，其生产率和实用性得到改善，并提供其制造方法。解决方案：磁阻效应元件（TMR元件10）具有由一对铁磁层和位于它们之间的中间位置的阻挡层形成的叠层结构（TMR元件12）。至少一个铁磁层设置有与具有非晶状态的阻挡层接触的部分，并且阻挡层是具有单晶结构的MgO层。版权所有（C）2006，JPO＆NCIPI

33. 发明专利

JP2003086866A METHOD FOR MANUFACTURING SPIN VALVE TYPE LARGE MAGNETIC RESISTANCE THIN FILM 审中-公开
公开(公告)号：JP2003086866A
公开(公告)日：2003-03-20
申请号：JP2001278723
申请日：2001-09-13
申请人： ANELVA CORP
发明人： TSUNEKAWA KOJI , NAKAJIMA DAISUKE
IPC分类号： G01R33/09 , G11B5/39 , G11B5/66 , G11B5/851 , H01F41/30 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a spin valve type large magnetic resistance thin film by which both high magnetic resistance changing rate (MR ratio) and low interlayer joint magnetic field (Hin) can be established. SOLUTION: This spin valve type large magnetic resistance thin film is formed by successively laminating a buffer layer, an anti-ferromagnetic layer, a magnetization fixed layer, a nonmagnetic conductive layer, a magnetization free layer, and a protection layer on a substrate. In such a structure, plasma treatment is applied to the boundary of a specified lamination to reduce an interlayer joint magnetic field working between the magnetization fixed layer and magnetization free layer, and to obtain a high MR ratio.

34. 发明专利

JP2014030030A Method of manufacturing spin valve tunnel magnetoresistive element 有权
标题翻译：旋转阀门隧道磁阻元件的制造方法
公开(公告)号：JP2014030030A
公开(公告)日：2014-02-13
申请号：JP2013185674
申请日：2013-09-06
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI , HOSOYA HIROYUKI , NAGAMINE YOSHINORI , FURUKAWA SHINJI , WATANABE NAOKI
IPC分类号： H01L43/12 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/225 , C23C14/3464 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/302 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a spin valve tunnel magnetoresistive element which can be made compact while enhancing thermal stability, and in which high magnetic anisotropy can be given to the magnetic layer thereof.SOLUTION: In the method of manufacturing a spin valve tunnel magnetoresistive element where an antiferromagnetic layer, a first magnetization fixed layer, a nonmagnetic layer for exchange coupling, a second magnetization fixed layer, a tunnel barrier layer, and a magnetization free layer are laminated in order on a substrate, sputter deposition of a magnetic layer on the substrate is performed by making sputter particles impinge on the substrate obliquely from a certain incident direction at a certain incident angle, while turning the substrate, by using a sputtering target for making the sputter particles impinge on the substrate from an oblique direction.
摘要翻译：要解决的问题：提供一种制造自旋阀隧道磁阻元件的方法，该方法可以在提高热稳定性的同时制造成小型化，并且可以对其磁性层赋予高磁各向异性。解决方案：在制造方法自旋阀隧道磁阻元件，其中反铁磁层，第一磁化固定层，用于交换耦合的非磁性层，第二磁化固定层，隧道势垒层和磁化自由层依次层压在衬底上，溅射沉积通过使溅射粒子以一定的入射角从一定的入射方向以一定的入射角度倾斜地撞击在基板上，同时转动基板，通过使用溅射靶使溅射粒子从倾斜的方式撞击到基板上来进行基板上的磁性层方向。

35. 发明专利

JP2013131721A Method of manufacturing magnetoresistance effect element and sputtering film-deposition apparatus 审中-公开
标题翻译：制造磁阻效应元件和溅射膜沉积装置的方法
公开(公告)号：JP2013131721A
公开(公告)日：2013-07-04
申请号：JP2011282091
申请日：2011-12-22
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NISHIMURA KAZUMASA , NAGAMINE YOSHINORI , TSUNEKAWA KOJI
IPC分类号： H01L43/12 , G11B5/39 , H01L21/31 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetoresistance effect element and a sputtering film-deposition apparatus in which a MgO layer (for example, a barrier layer) having excellent crystallinity can be formed even in the initial stage of film deposition.SOLUTION: In one embodiment of the invention, a substrate 10 is disposed so as to be separated from a target 4 which is a magnesium oxide target, and a film of magnesium oxide is formed on the substrate 10 by sputtering. During this film formation, plasma is generated in the vicinity of the target 4 by applying electric power to the target 4, and the target 4 is sputtered. Then, electrons are supplied toward the substrate 10 by an electron gun 9a as electron supply means separate from the plasma.
摘要翻译：要解决的问题：为了提供即使在薄膜沉积的初始阶段也可以形成具有优异结晶度的MgO层（例如阻挡层）的磁阻效应元件和溅射成膜装置的制造方法。解决方案：在本发明的一个实施例中，将衬底10设置成与氧化镁靶的靶4分离，并且通过溅射在衬底10上形成氧化镁膜。在该成膜期间，通过对靶4施加电力而在目标4附近产生等离子体，溅射靶4。然后，通过与等离子体分离的电子供给装置的电子枪9a向基板10供给电子。

36. 发明专利

JP2010123978A Method of manufacturing magnetoresistive element 审中-公开
标题翻译：制造磁性元件的方法
公开(公告)号：JP2010123978A
公开(公告)日：2010-06-03
申请号：JP2009291333
申请日：2009-12-22
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI , DAVID JULIANT JAYAPURAUIRA
IPC分类号： H01L43/12 , G11B5/39 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element excelling in thermal stability and high in an MR ratio.
SOLUTION: This magnetoresistive element includes: an antiferromagnetic layer formed of a layer containing manganese; a layered magnetization fixed layer which includes a first magnetization fixed layer located on the antiferromagnetic layer side and formed of a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed of a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer located between the first magnetization fixed layer and the second magnetization fixed layer; a magnetic free layer formed of a layer containing a ferromagnetic material; and a second nonmagnetic intermediate layer located between the layered magnetization fixed layer and the magnetic free layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的热稳定性和高MR比的磁阻元件。解决方案：该磁阻元件包括：由含锰的层形成的反铁磁层; 层状磁化固定层，其包括位于反铁磁层一侧并由含有铁磁材料和铂族金属的层形成的第一磁化固定层，由含有铁磁材料的层形成的第二磁化固定层和第一磁化固定层位于第一磁化固定层和第二磁化固定层之间的非磁性中间层; 由含有铁磁材料的层形成的无磁性层; 以及位于层状磁化固定层和无磁性层之间的第二非磁性中间层。版权所有（C）2010，JPO＆INPIT

37. 发明专利

JP2009272653A Magnetoresistance effect device 有权
标题翻译：磁阻效应器件
公开(公告)号：JP2009272653A
公开(公告)日：2009-11-19
申请号：JP2009189654
申请日：2009-08-19
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/08 , H01F10/13 , H01F10/16 , H01F10/30 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect device that has a high MR ratio, a high productivity and a high marketability, in a magnetoresistance effect device having a pair of ferromagnetic layers and an intermediate layer disposed between the pair of ferromagnetic layers.
SOLUTION: At least one of the ferromagnetic layers is formed of amorphous ferromagnetic material deposited in a film through magnetron DC sputtering, and the intermediate layer is of magnesium oxide deposited in a film through magnetron RF sputtering to have a single crystal structure in a direction of film thickness.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供具有高MR比，高生产率和高市场性的磁阻效应装置，在具有一对铁磁层和设置在一对铁磁体之间的中间层的磁阻效应装置中层。解决方案：至少一个铁磁层由通过磁控管DC溅射沉积在膜中的非晶铁磁材料形成，并且中间层是通过磁控溅射溅射沉积在膜中的氧化镁以具有单晶结构膜厚方向。版权所有（C）2010，JPO＆INPIT

38. 发明专利

JP2009221595A Sputtering apparatus and method for controlling the same 有权
标题翻译：溅射装置及其控制方法
公开(公告)号：JP2009221595A
公开(公告)日：2009-10-01
申请号：JP2008320752
申请日：2008-12-17
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI
IPC分类号： C23C14/34
CPC分类号： C23C14/352 , C23C14/165 , C23C14/548 , H01J37/34 , H01J37/3447
摘要： PROBLEM TO BE SOLVED: To provide a multi-target sputtering apparatus including an increased number of targets which can be sputtered simultaneously, and a method for controlling the sputtering apparatus. SOLUTION: First and second shutter plates are provided between a substrate and target electrodes, and paths between intended targets and the substrate are shut off by the shutter plates to perform a pre-sputtering step. In addition, the first and second shutter plates are rotated as appropriate at the time of transition to a full-scale sputtering step, so as to overlap through-holes provided in the shutter plates, thereby opening up paths between the intended targets and the substrate. Then, a full-scale sputtering step is performed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括可以同时溅射的目标数量增加的多靶溅射装置，以及用于控制溅射装置的方法。解决方案：第一和第二快门板设置在基板和目标电极之间，并且预定目标和基板之间的路径被快门板切断以执行预溅射步骤。此外，第一和第二快门板在转变到全尺寸溅射步骤时适当地旋转，以便重叠设置在快门板中的通孔，从而打开预期目标和基板之间的路径。然后，进行全尺寸溅射步骤。版权所有（C）2010，JPO＆INPIT

39. 发明专利

JP2009199717A Method for manufacturing perpendicular magnetic recording medium 有权
标题翻译：制造全能磁记录介质的方法
公开(公告)号：JP2009199717A
公开(公告)日：2009-09-03
申请号：JP2009105865
申请日：2009-04-24
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： DAVID DJAYAPRAWIRA , WATANABE NAOKI , SHIBAMOTO MASAHIRO , TSUNEKAWA KOJI
IPC分类号： G11B5/851 , G11B5/738
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a perpendicular magnetic recording medium at low cost that exhibits excellent magnetic characteristics and recording/reproducing characteristics and further enables higher recording density.
SOLUTION: The method for manufacturing the perpendicular magnetic recording medium includes: a step of using a NiCr alloy target or a Cr target and a Ni target, and forming a seed layer by sputtering; a step of forming a non-magnetic primary layer on the seed layer; and a step of a magnetic layer on the non-magnetic primary layer.
COPYRIGHT: (C)2009,JPO&INPIT

40. 发明专利

JP2009071321A Method of manufacturing magnetoresistance effect device 有权
标题翻译：制造磁阻效应器件的方法
公开(公告)号：JP2009071321A
公开(公告)日：2009-04-02
申请号：JP2008290569
申请日：2008-11-13
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MAEHARA DAIKI , OSADA TOMOAKI , DOI MIHOKO , TSUNEKAWA KOJI , WATANABE NAOKI
IPC分类号： H01L43/08 , H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magetoresistance effect device preventing degradation in an MR ratio and highly retaining a performance as the magnetoresistance effect device, even when an oxide layer is formed on the uppermost layer of a protective layer by an oxidation process necessarily performed during manufacturing, by doubly arranging a mask material used on a microfabrication without performing any special modification during manufacturing a dry-etching microfabrication in a vacuum environment.
SOLUTION: The magnetoresistance effect device includes a magnetic multilayered film containing at least two magnetic layers. Its dry-etching microbabrication is performed by overlaying a second mask containing either one of Ru, Rh, Os, Nb, Ir, and Re on the lower layer of a first mask comprising Ta.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了提供一种制造防止MR比降低并且高度保持作为磁阻效应器件的性能的法阻电阻效应器件的方法，即使在保护层的最上层形成氧化物层通过在制造期间必须执行的氧化工艺，通过在真空环境中制造干蚀刻微细制造期间双重布置在微细加工中使用的掩模材料而不进行任何特殊改性。解决方案：磁阻效应器件包括含有至少两个磁性层的磁性多层膜。通过在包含Ta的第一掩模的下层上覆盖包含Ru，Rh，Os，Nb，Ir和Re中的任一种的第二掩模来进行干蚀刻微加工。版权所有（C）2009，JPO＆INPIT

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