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1. 发明专利

JP2006060044A Manufacturing method of magnetoresistance effect element 审中-公开
标题翻译：磁阻效应元件的制造方法
公开(公告)号：JP2006060044A
公开(公告)日：2006-03-02
申请号：JP2004240838
申请日：2004-08-20
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MAEHARA DAIKI , OSADA TOMOAKI , DOI MIHOKO , TSUNEKAWA KOJI , WATANABE NAOKI
IPC分类号： H01L43/12 , G11B5/39 , H01F10/32 , H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/12 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a magnetoresistance effect element capable of preventing the lowering of an MR ratio even when an oxide layer is formed on the topmost surface layer of a protective layer owing to an oxidation process inevitably included in a manufacturing process, and of keeping performance as a megnetoresistance effect element high by doubly stacking a mask material used in fine processing without applying particular alteration to the manufacturing process of the fine processing of dry etching performed in a vacuum. SOLUTION: The manufacturing method of a magnetoresistance effect element 20 is a dry etching method of a magnetoresistance effect element composed of a magnetic multilayer film containing at least two layers, wherein a second mask material to be a conductor with a reaction with the other atom is doubly overlapped on the lower layer of a first mask material comprising a non-organic-based material. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种即使当由于氧化过程不可避免地包括在保护层的最上表面层上形成氧化物层时也能够防止MR比降低的磁阻效应元件的制造方法在制造过程中，并且通过双重层叠精细加工中使用的掩模材料来保持作为巨电阻效应元件的性能，而不特别改变在真空中进行的干法蚀刻的精细加工的制造工艺。解决方案：磁阻效应元件20的制造方法是由包含至少两层的磁性多层膜构成的磁阻效应元件的干蚀刻方法，其中第二掩模材料作为与其它原子在包含非有机基材料的第一掩模材料的下层上双重重叠。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2009071321A Method of manufacturing magnetoresistance effect device 有权
标题翻译：制造磁阻效应器件的方法
公开(公告)号：JP2009071321A
公开(公告)日：2009-04-02
申请号：JP2008290569
申请日：2008-11-13
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MAEHARA DAIKI , OSADA TOMOAKI , DOI MIHOKO , TSUNEKAWA KOJI , WATANABE NAOKI
IPC分类号： H01L43/08 , H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magetoresistance effect device preventing degradation in an MR ratio and highly retaining a performance as the magnetoresistance effect device, even when an oxide layer is formed on the uppermost layer of a protective layer by an oxidation process necessarily performed during manufacturing, by doubly arranging a mask material used on a microfabrication without performing any special modification during manufacturing a dry-etching microfabrication in a vacuum environment.
SOLUTION: The magnetoresistance effect device includes a magnetic multilayered film containing at least two magnetic layers. Its dry-etching microbabrication is performed by overlaying a second mask containing either one of Ru, Rh, Os, Nb, Ir, and Re on the lower layer of a first mask comprising Ta.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了提供一种制造防止MR比降低并且高度保持作为磁阻效应器件的性能的法阻电阻效应器件的方法，即使在保护层的最上层形成氧化物层通过在制造期间必须执行的氧化工艺，通过在真空环境中制造干蚀刻微细制造期间双重布置在微细加工中使用的掩模材料而不进行任何特殊改性。解决方案：磁阻效应器件包括含有至少两个磁性层的磁性多层膜。通过在包含Ta的第一掩模的下层上覆盖包含Ru，Rh，Os，Nb，Ir和Re中的任一种的第二掩模来进行干蚀刻微加工。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009081451A Magnetoresistance effect element 审中-公开
标题翻译：磁阻效应元素
公开(公告)号：JP2009081451A
公开(公告)日：2009-04-16
申请号：JP2008290578
申请日：2008-11-13
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MAEHARA DAIKI , OSADA TOMOAKI , DOI MIHOKO , TSUNEKAWA KOJI , WATANABE NAOKI
IPC分类号： H01L43/10 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element that can prevent a reduction in MR ratio to keep performance as a magnetoresistance effect element high even when an oxide layer is formed as an outermost surface layer of a protection layer in an oxidation step inevitably included in a manufacturing process by laminating a mask material used for microfabrication double without specially altering the manufacturing step of microfabrication of dry etching carried out under a vacuum.
SOLUTION: Disclosed is the magnetoresistance effect element having a substrate, a magnetic multilayered film including at least two magnetic layers, a metal layer made of one kind of metal among Ru, Rh, Os, Nb, Ir and Re, and a conductive oxide layer made of an oxide of the metal.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种磁阻效应元件，其即使当形成氧化物层作为氧化物中的保护层的最外表面层时，也可以防止MR比的降低以保持作为磁阻效应元件的性能高通过层压用于微细加工的掩模材料双重的步骤，不可避免地包括在制造过程中，而不会特别改变在真空下进行的干法蚀刻的微细加工的制造步骤。解决方案：公开了具有基板的磁阻效应元件，包括至少两个磁性层的磁性多层膜，Ru，Rh，Os，Nb，Ir和Re中的一种金属制成的金属层，以及由金属的氧化物制成的导电氧化物层。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2010045398A Method for manufacturing magnetoresistance effect element 审中-公开
标题翻译：制造磁阻效应元件的方法
公开(公告)号：JP2010045398A
公开(公告)日：2010-02-25
申请号：JP2009261796
申请日：2009-11-17
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MAEHARA DAIKI , OSADA TOMOAKI , DOI MIHOKO , TSUNEKAWA KOJI , WATANABE NAOKI
IPC分类号： H01L43/12 , C23F1/00 , C23F1/12 , G11B5/39 , H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetoresistance effect element capable of preventing the reduction of the MR ratio of the element and keeping high performance as the magnetoresistance effect element even if an oxidized layer is formed on the top surface layer of a protective layer by an oxidation process inevitable in the manufacturing process by doubly stacking a mask material for fine processing without particular alteration to a manufacturing process for fine processing by dry etching in a vacuum.
SOLUTION: The method for dry etching a magnetoresistance effect element is composed of a magnetic multilayer film including at least two magnetic layers, wherein a second mask formed of one of Ru, Rh, Os, Nb, Ir, and Re is doubly stacked on a lower layer of a first mask formed of Ta.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造磁阻效应元件的方法，即使在顶表面上形成氧化层，其能够防止元件的MR比降低并保持高性能，作为磁阻效应元件通过在制造过程中不可避免地通过双重堆叠掩模材料进行精细加工而不会特别改变用于在真空中的干蚀刻的精细加工的制造工艺的氧化工艺的保护层层。解决方案：用于干蚀刻磁阻效应元件的方法由包括至少两个磁性层的磁性多层膜组成，其中由Ru，Rh，Os，Nb，Ir和Re中的一种形成的第二掩模是双重的堆叠在由Ta形成的第一掩模的下层上。版权所有（C）2010，JPO＆INPIT

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