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1. 发明专利

JP2006080116A Magnetoresistive effect element and its manufacturing method 有权
标题翻译：磁电效应元件及其制造方法
公开(公告)号：JP2006080116A
公开(公告)日：2006-03-23
申请号：JP2004259280
申请日：2004-09-07
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/08 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/10 , H01L43/12
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which is superior in MR ratio and of which mass-productivity and practicality are improved, and to provide its manufacturing method. SOLUTION: The magnetoresistive effect element (TMR element 10) has a lamination structure (TMR element 12) which is formed of a pair of ferromagnetic layers and a barrier layer located at the middle position between them. At least one ferromagnetic layer is provided with such a portion in contact with the barrier layer that has an amorphous state, and the barrier layer is an MgO layer with a single crystal structure. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种磁阻效应元件，该磁阻效应元件在MR比方面优异，其生产率和实用性得到改善，并提供其制造方法。解决方案：磁阻效应元件（TMR元件10）具有由一对铁磁层和位于它们之间的中间位置的阻挡层形成的叠层结构（TMR元件12）。至少一个铁磁层设置有与具有非晶状态的阻挡层接触的部分，并且阻挡层是具有单晶结构的MgO层。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2009164628A Method of manufacturing magnetoresistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：JP2009164628A
公开(公告)日：2009-07-23
申请号：JP2009091675
申请日：2009-04-06
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/12 , H01F10/14 , H01F10/16 , H01F10/32 , H01F41/18 , H01L21/316 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetoresistance effect element including a multilayer structure composed of a ferromagnetic layer and a barrier layer on the ferromagnetic layer, which provides a high MR ratio and higher mass productivity and practicality.
SOLUTION: The ferromagnetic layer of which at least the surface is in an amorphous state is formed, and then the barrier layer of a magnesium oxide having a single crystalline structure wherein (001) planes are aligned in parallel with the interface throughout layers is formed by sputtering, and furthermore annealing processing is performed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种制造磁阻效应元件的方法，该磁阻效应元件包括在铁磁层上由铁磁层和阻挡层组成的多层结构，其提供高MR比和较高的批量生产率和实用性。形成至少表面处于非晶状态的铁磁层，然后形成具有单晶结构的氧化镁的阻挡层，其中（001）面在整个层中与界面平行排列通过溅射形成，进而进行退火处理。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009044173A Magnetic multilayer film forming apparatus 审中-公开
标题翻译：磁性多层膜成膜装置
公开(公告)号：JP2009044173A
公开(公告)日：2009-02-26
申请号：JP2008259594
申请日：2008-10-06
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/12 , C23C14/34 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic multilayer film forming apparatus by which a magnetoresistive element can be obtained having a high MR ratio and increased in mass-productivity and practicality. SOLUTION: Disclosed is the magnetic multilayer film forming apparatus wherein a first filming chamber 27A forming an amorphous ferromagnetic substance layer, a second filming chamber 27B forming an antiferromagnetic layer, and a third filming chamber 27C forming a magnesium oxide layer having a single-crystal structure where a (001) surface is oriented in parallel to an interface of a filming layer in the thickness of the filming layer are disposed while connected to a conveyance chamber 22 through gate valves 30, 30, and 30, respectively. A robot conveying device moving a substrate to the first to the third chambers 27A, 27B, and 27C is provided in the conveyance chamber 22. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁性多层膜形成装置，通过该磁性多层膜形成装置可以获得具有高MR比并且增加批量生产率和实用性的磁阻元件。解决方案：公开了一种磁性多层膜形成装置，其中形成非晶铁磁物质层的第一成膜室27A，形成反铁磁性层的第二成膜室27B和形成具有单一的铁磁性物质的氧化镁层的第三成膜室27C 在通过闸阀30,30和30分别连接到输送室22的同时，在（001）表面平行于成膜层的成膜层的界面取向成膜层的结晶结构。将输送基板移动到第一至第三室27A，27B和27C的机器人输送装置设置在输送室22中。（C）2009，JPO＆INPIT

4. 发明专利

JP2009272653A Magnetoresistance effect device 有权
标题翻译：磁阻效应器件
公开(公告)号：JP2009272653A
公开(公告)日：2009-11-19
申请号：JP2009189654
申请日：2009-08-19
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/08 , H01F10/13 , H01F10/16 , H01F10/30 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect device that has a high MR ratio, a high productivity and a high marketability, in a magnetoresistance effect device having a pair of ferromagnetic layers and an intermediate layer disposed between the pair of ferromagnetic layers.
SOLUTION: At least one of the ferromagnetic layers is formed of amorphous ferromagnetic material deposited in a film through magnetron DC sputtering, and the intermediate layer is of magnesium oxide deposited in a film through magnetron RF sputtering to have a single crystal structure in a direction of film thickness.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供具有高MR比，高生产率和高市场性的磁阻效应装置，在具有一对铁磁层和设置在一对铁磁体之间的中间层的磁阻效应装置中层。解决方案：至少一个铁磁层由通过磁控管DC溅射沉积在膜中的非晶铁磁材料形成，并且中间层是通过磁控溅射溅射沉积在膜中的氧化镁以具有单晶结构膜厚方向。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009044174A Magnetoresistive element and mram using the same 有权
标题翻译：磁性元件和使用它的MRAM
公开(公告)号：JP2009044174A
公开(公告)日：2009-02-26
申请号：JP2008259611
申请日：2008-10-06
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/08 , C23C14/06 , C23C14/08 , H01L21/8246 , H01L27/105 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element having a high MR ratio and increased in mass-productivity and practicality.
SOLUTION: Disclosed is the magnetoresistive element comprising a first ferromagnetic layer, a second ferromagnetic layer, a barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and a substrate disposed on the side of the first ferromagnetic layer. The barrier layer has magnesium oxide having a single-crystal structure where a (001) surface is oriented in parallel to interfaces in the thickness of the layer from the interface with the first ferromagnetic layer to the interface with the second ferromagnetic layer The first ferromagnetic layer contains CoFeB.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有高MR比并且批量生产率和实用性增加的磁阻元件。解决方案：公开了磁阻元件，其包括第一铁磁层，第二铁磁层，设置在第一铁磁层和第二铁磁层之间的势垒层，以及设置在第一铁磁层一侧的衬底。阻挡层具有单晶结构的氧化镁，其中（001）表面平行于与第一铁磁层的界面到与第二铁磁层的界面的层的厚度平行的第一铁磁层含有CoFeB。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008270835A Method of manufacturing magnetoresistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：JP2008270835A
公开(公告)日：2008-11-06
申请号：JP2008163571
申请日：2008-06-23
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetoresistance effect element including a laminated structure composed of a ferromagnetic layer and a barrier layer on the ferromagnetic layer, having a high MR ratio and improved in mass productivity and practicality.
SOLUTION: A magnesium oxide layer is formed whose (001) surface is oriented as the barrier layer on a ferromagnetic layer by radio frequency magnetron sputtering using a magnesium oxide target.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方案：提供一种制造磁阻效应元件的方法，该磁电阻效应元件包括由强磁性层和势垒层组成的叠层结构，其具有高MR比并且提高了批量生产率和实用性。解决方案：通过使用氧化镁靶的射频磁控溅射，形成（001）表面作为阻挡层在铁磁层上取向的氧化镁层。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2011181756A Microwave element 审中-公开
标题翻译：微波元件
公开(公告)号：JP2011181756A
公开(公告)日：2011-09-15
申请号：JP2010045573
申请日：2010-03-02
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial Science & Technology , Osaka Univ , キヤノンアネルバ株式会社 , 国立大学法人大阪大学 , 独立行政法人産業技術総合研究所
发明人： MAEHARA DAIKI , SUZUKI YOSHISHIGE , SEKI TAKESHI , MASUKATA YASUTOMO , ISHIBASHI SHOTA , KUBOTA HITOSHI
IPC分类号： H01L29/82 , G01R33/09 , H01L43/08 , H03B15/00
CPC分类号： H03B15/006
摘要： PROBLEM TO BE SOLVED: To solve such the problem that it is difficult to greatly improve characteristics in detection output, oscillation output, etc. SOLUTION: A microwave element 100, using a magnetoresistive element having the magnetization free layer 103 of an in-plane magnetization layer, the magnetization fixed layer 105 of an in-plane magnetization film, and a tunnel barrier layer 104 provided between the magnetization free layer 103 and magnetization fixed layer 105, includes an external magnetic field application mechanism 302 which applies an external magnetic field of 3 to 30° from an axis in the film surface perpendicular direction of the magnetoresistive element. In the microwave element 100, a ratio of a demagnetizing field in the film surface perpendicular direction of the magnetization free layer 103 to a demagnetizing field in the film surface perpendicular direction of the magnetization fixed layer 105 is equal to or less than 0.5. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决方案：解决难以大大提高检测输出，振荡输出等特性的问题。解决方案：微波元件100使用具有磁化自由层103的磁阻元件的平面内磁化层，面内磁化膜的磁化固定层105和设置在磁化自由层103和磁化固定层105之间的隧道势垒层104包括外部磁场施加机构302，其应用与磁阻元件的膜表面垂直方向上的轴3至30°的外部磁场。在微波元件100中，磁化自由层103的膜表面垂直方向上的去磁场与磁化固定层105的膜表面垂直方向上的去磁场的比例等于或小于0.5。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010050309A Negative resistive element using magneto-resistance effect 审中-公开
标题翻译：使用磁阻效应的负电阻元件
公开(公告)号：JP2010050309A
公开(公告)日：2010-03-04
申请号：JP2008213709
申请日：2008-08-22
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial Science & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： MAEHARA DAIKI , NAGAMINE YOSHINORI , KUBOTA HITOSHI , FUKUSHIMA AKIO , YUASA SHINJI , SUZUKI YOSHISHIGE
IPC分类号： H01L43/08 , H01L29/66 , H01L29/82
CPC分类号： H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a negative-resistance two-terminal element with good linearity based upon a principle different from tunneling effect. SOLUTION: The negative-resistive element has a magneto-resistive element including an magnetic free layer (33), a pinned magnetic layer (31) having larger magnetic moment than the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and pinned magnetic layer. The element exhibits negative resistance when change of a magnetization direction of the magnetic free layer is continuously caused as a current applied to the magneto-resistive element so as to make electrons flow in from the side of the pinned magnetic layer increases. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：基于与隧道效应不同的原理，提供具有良好线性度的负电阻两端元件。解决方案：负电阻元件具有包括无磁性层（33）的磁阻元件，具有比无磁性层更大的磁矩的钉扎磁性层（31）和提供的中间层（32）在磁性层和被钉扎的磁性层之间。当磁性自由层的磁化方向的变化被连续地引入作为施加到磁阻元件的电流以使得电子从被钉扎的磁性层的一侧流入的电流增加时，元件呈现负电阻。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010252296A Frequency converting apparatus, and frequency conversion method 审中-公开
标题翻译：频率转换装置和频率转换方法
公开(公告)号：JP2010252296A
公开(公告)日：2010-11-04
申请号：JP2009280288
申请日：2009-12-10
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MAEHARA DAIKI
IPC分类号： H03D7/00 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a frequency converting element which is adaptable to not only Si MMIC (Monolithic Microwave Integrated Circuit) but also a GaAs MMIC by using a magnetoresistive element.
SOLUTION: The frequency converting element is equipped with: a frequency converting element comprised of a magnetoresistive element including a magnetization free layer, an intermediate layer and a magnetization fixed layer; a magnetic field applying mechanism for applying a magnetic field to the frequency converting element; a local oscillator for applying a local oscillation signal to the frequency converting element; and an input terminal, electrically connected with the frequency converting element, for inputting an external input signal.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种不仅可以适用于Si MMIC（单片微波集成电路）而且通过使用磁阻元件也可以适用于GaAs MMIC的频率转换元件。解决方案：变频元件配备有：包括磁阻自由层，中间层和磁化固定层的磁阻元件的变频元件; 用于向频率转换元件施加磁场的磁场施加机构; 本地振荡器，用于将本地振荡信号施加到所述频率转换元件; 以及与频率转换元件电连接的用于输入外部输入信号的输入端子。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2008282888A Vacuum processing apparatus and vacuum processing method 审中-公开
标题翻译：真空加工设备和真空加工方法
公开(公告)号：JP2008282888A
公开(公告)日：2008-11-20
申请号：JP2007124047
申请日：2007-05-09
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MAEHARA DAIKI , KITANO NAOTAKE , NAGAMINE YOSHINORI , FURUKAWA SHINJI
IPC分类号： H01L21/31 , C23C14/58 , C23C16/56 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To improve processing efficiency by increasing the number of active seeds generated within a discharge chamber 3 and also increasing the number of active seeds moving to a substrate processing chamber 4 in the vacuum processing apparatus including the discharge chamber 3 for generating active seeds through excitation of plasma with high frequency discharge, the substrate processing chamber 4 for storing substrates 10 as the processing object by the active seeds generated in the discharge chamber 3, and a partition plate 2 for confining plasma within the discharge chamber 3 and also moving th eactive seeds to the substrate processing chamber 4 from the discharge chamber 3 via a through-hole 5.
SOLUTION: An interval between the electrodes for generating high frequency discharge within the discharge chamber 3 is set to 15 to 25 mm in order to form high power and high frequency plasma.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过增加在放电室3内产生的活性种子的数量来提高加工效率，并且还增加在包括排出室3的真空处理设备中移动到基板处理室4的活性种子的数量为了通过激发高频放电的等离子体产生活性种子，用于通过在放电室3中产生的活性种子来存储作为处理对象的基板10的基板处理室4和用于将等离子体限制在排出室3内的隔板2 并且还经由通孔5从放电室3将活性种子移动到基板处理室4.解决方案：在放电室3内产生高频放电的电极之间的间隔被设定为15至25 mm以形成高功率和高频等离子体。版权所有（C）2009，JPO＆INPIT

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