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21. 发明专利

JPH06120120A X-RAY LITHOGRAPHY EQUIPMENT 失效
公开(公告)号：JPH06120120A
公开(公告)日：1994-04-28
申请号：JP26991292
申请日：1992-10-08
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , ANDO KOZO , AOYANAGI KATSUNOBU
IPC分类号： G21K5/02 , G03F7/20 , H01L21/027 , H05G2/00
摘要： PURPOSE:To obtain practical X-ray intensity, by constituting a pumping laser equipment so as to output a pumping laser light having a pulse train waveform wherein the pulse width has a specified numerical value, the pulse time interval has a specified numerical value, and the total number of pulses is larger than or equal to a specified numerica value. CONSTITUTION:In a vacuum vessel 1, a silicon substrate 3 is so arranged that the distance from a titanium target 2 to X-ray resist is about 11cm. Laser light 8 is a pumping laser light having a pulse train waveform wherein the width of each pulse is 300ps or smaller, the time interval of pulses is 600ps or shorter, and the total number of pulses is 3 or larger. Thereby X-ray whose intensity is practically sufficient is generated, so that practical X-ray intensity can be obtained by using a small-sized low output pumping laser equipment.

22. 发明专利

JPH05295527A 失效
公开(公告)号：JPH05295527A
公开(公告)日：1993-11-09
申请号：JP19920991
申请日：1991-08-08
申请人： RIKAGAKU KENKYUSHO , JEOL LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , KOBUNA SADATOSHI
IPC分类号： C23C14/32
摘要： PURPOSE:To develop ion plating device having the excellent efficiency of utilizing electrons by providing a reflection plate for the electrons from a plasma generator in a vapor deposition chamber of the ion plating device. CONSTITUTION:The inside of a plasma forming device 9 and the vacuum vapor deposition chamber 1 connected thereto is evacuated to a vacuum and gaseous Ar is gradually supplied from a gas supplying pipe 15 of a plasma forming device, simultaneously with which the electrons are released by energizing a hot cathode 10. A voltage is then impressed between the hot cathode 10 and a discharge electrode 12 to generate a discharge. Ar molecules are ionized by the electrons from the hot cathode 10 to generate plasma P. The electrons formed therein advance rectilinearly in the vapor deposition chamber 1. On the other hand, a raw material 3 for vapor deposition in a crucible 2 is heated and evaporated by the electrons from a filament 4 and collide against the electrons from the plasma forming device 9, by that, the raw material is ionized and a vapor deposited film is formed on a substrate 6. The electrons are partly not utilized and advance rectilinearely and, therefore, these electrons are reflected by the reflection electrode 21 to irradiate and evaporate the raw material 3 for vapor deposition in the crusible 2. The electrons are thus effectively utilized for the vapor deposition effect.

23. 发明专利

JPH03110844A DIGITAL ETCHING METHOD 失效
公开(公告)号：JPH03110844A
公开(公告)日：1991-05-10
申请号：JP24972589
申请日：1989-09-26
申请人： RIKAGAKU KENKYUSHO
发明人： MEGURO TAKASHI , HAMAGAKI MANABU , HARA TAMIO , AOYANAGI KATSUNOBU
IPC分类号： C23F4/00 , G11B9/00 , G11B9/14 , H01L21/302
摘要： PURPOSE:To make it possible to obtain etching characteristics, which are stable and have a controllability in an atomic layer level, by a method wherein before a beam is projected, reactive gas is evacuated and the reactive gas which does not contribute to adsorption to the surfaces of solid materials is evacuated from the interior of a container. CONSTITUTION:This digital etching method is a method wherein reactive gas 2 is adsorbed to the surfaces of solid materials 1 in a container and after this gas is evacuated, an etching is controlled at an atomic layer level by repeating a process for projecting a charged particle beam or an optical beam 3. That is, by the adsorption of the gas 2 to the surfaces of the materials 1, the coupling of adsorbed solid atoms 1' with the materials 1 is weakened, then, the atoms 1' only weakened their coupling are etched through the materials 1 with the charged particle beam or the optical beam 3 which is projected. Thereby, stable etching characteristics which do not depend on the amount of the gas 2, which is fed, and the amount of the beam, which is projected, can be realized having a controllability at the atomic layer level.

24. 发明专利

JPH01176633A ELECTRON BEAM-EXCITING ION SOURCE 失效
公开(公告)号：JPH01176633A
公开(公告)日：1989-07-13
申请号：JP33216887
申请日：1987-12-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , MATSUDO MASAHIKO , KOSHIISHI AKIRA , KAWAMURA GOHEI , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To make it possible to form uniform plasma of a large diameter in an ion generating area by making an ion beam produced with an ion generating device a diffused flow. CONSTITUTION:Outside a closed container 1 is disposed an annularly formed hollow-core coil 8. Between an orifice 4 of the closed container 1 and an anode 5 is disposed a layer consisting of a material of a high permeability, for example an iron layer 9, so as to surround the circumference of the container 1. The magnetic field formed by energizing the hollow-core coil 8 in the closed container 1 runs as shown with dotted line in the drawing to expand in the direction of the iron layer 9 inside the iron layer 9, namely in the direction of the rim or the closed container 1, and runs approximately linearly in other parts. Since electrons are deflected in this electron generating area to expand in the direction of the rim of the electron generating area and uniformly enter an ion generating area where ions are generated, it is possible to form uniform plasma of a large diameter in the ion generating area.

25. 发明专利

JPS63221540A ELECTRON BEAM EXCITING ION SOURCE 失效
公开(公告)号：JPS63221540A
公开(公告)日：1988-09-14
申请号：JP5339187
申请日：1987-03-09
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： TAKAYAMA NAOKI , KAWAMURA GOHEI , HARA TAMIO , HAMAGAKI MANABU , NANBA SUSUMU , AOYANAGI KATSUNOBU
IPC分类号： H05H7/08 , H01J27/20
摘要： PURPOSE:To obtain an electron beam exciting ion source with the large current density, long life, and low power consumption quantity by making the diameter of through holes 0.65mm or less when electrons are extracted from a plasma generation region by the voltage of an electrode with many through holes. CONSTITUTION:Discharge gas is guided into a chamber 1 through the through hole 4 of a cathode electrode 5, a glow discharge is generated across the electrode 5 and an anode electrode 2 to form plasma. Next, electrons extracted from the plasma by an electron beam accelerating electrode 3 collide with arsenic gas in an ion generating chamber 10 to generate plasma, which is extracted by a plasma ion extracting electrode 11. In this constitution, through holes (b) with a diameter of 0.5-0.6mm capable of extracting an electron beam most efficiently are arranged with a pitch of 0.7-1.0mm. As a result, a large quantity of the electron beam can be extracted without impairing the durability of these electrodes, the current can be reduced, thus the life of the electrode 5 is extended, and the power consumption can be reduced.

26. 发明专利

JPS61290629A ELECTRON BEAM EXCITATION ION SOURCE 失效
公开(公告)号：JPS61290629A
公开(公告)日：1986-12-20
申请号：JP13213885
申请日：1985-06-18
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To produce large current ion beam efficiently by providing means for applying negative potential against the acceleration anode onto the target cathode and an ion take-out electrode thereby increasing the ratio of ion current against the input power. CONSTITUTION:Plasma is produced in the plasma region 5 through discharge between cathode 1 and acceleration cathode 2. The electrons constituting the plasma are attracted by an acceleration anode 3 to enter into the ion producing region 7 thus to produce ions. A portion of said ions is attracted by the acceleration cathode 2 to lower the negative potential barrier to be formed near the opening of the acceleration cathode 2. Consequently, electron flow of such level as proportional to the plasma density in the plasma region 5 will flow into the ion producing region 7. In this region 7, ions are produced in proportion to the level of electron flow. Said ions are controlled of their energy by the potential of the ion take-out electrode 4b then accelerated.

27. 发明专利

JPS61273840A ELECTRON BEAM EXCITING ION IRRADIATING APPARATUS 失效
公开(公告)号：JPS61273840A
公开(公告)日：1986-12-04
申请号：JP11508585
申请日：1985-05-28
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： G21C5/04 , H01J27/20 , H01J37/08
摘要： PURPOSE:To enable irradiation of a large quantity of low energy ions onto a sample by providing means for controlling the voltage between a sample arranging section and an acceleration anode thereby controlling the plasma density under plasma region. CONSTITUTION:Electrodes 1-3 and a sample arranging section 4 are contained in a container filled with argon gas thus to constitute an electron beam exciting ion irradiator. Then a plasma is produced in the plasma region 5 through discharge between a cathode 1 and an acceleration cathode 2 to attract the composition electrons through an acceleration anode 3 into the ion producing region 7 thus to flow the electron current of such level as proportional with the plasma density in the plasma region 5 and to produce the ions. The energy of ions is controlled through the potential at the sample arranging section 4 prior to irradiation onto a sample 18. Consequently, large current ion beam can be irradiated under low energy region through control of irradiating ions.

28. 发明专利

JPS61153937A ELECTRON BEAM GENERATOR 失效
公开(公告)号：JPS61153937A
公开(公告)日：1986-07-12
申请号：JP27673884
申请日：1984-12-26
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMATSUNE MANABU , KIN HITSUGEN , NANBA SUSUMU
IPC分类号： H01J37/077
摘要： PURPOSE:To prevent occurrence of anode point by arranging an electrode for shaping the plasma potential distribution near to the second accelerating electrode at the plasma region side thereby uniforming the plasma potential on the surface of second accelerating electrode. CONSTITUTION:An electron beam generator is constituted by containing first and second accelerating electrodes 1, 2, plasma potential distribution shaping electrode 3 and cathode 4 in a plasma container 5. Discharge is produced between the cathode 4 and the second accelerating electrode 2 to produce plasma thus to emit an electron beam 7 into an ion production container 8 and to produce ions which are used to eliminate the potential barrier produced in the vicinity of the opening 9 of second accelerating electrode 2 by space charges. While the third electrode 3 will correct distorsion of the plasma potential distribution thus to prevent occurrence of anode point. Consequently, discharge between the accelerating electrodes 1, 2 is prevented resulting in stable electron acceleration.

29. 发明专利

JP2724461B2 失效
公开(公告)号：JP2724461B2
公开(公告)日：1998-03-09
申请号：JP33216987
申请日：1987-12-30
申请人： TOKYO EREKUTORON KK , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , KOSHIISHI AKIRA , MATSUDO MASAHIKO , KAWAMURA GOHEI , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08

30. 发明专利

JP2564572B2 失效
公开(公告)号：JP2564572B2
公开(公告)日：1996-12-18
申请号：JP26237187
申请日：1987-10-16
申请人： TOKYO EREKUTORON KK , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , YOSHINAGA TAKASHI , ARAKI YOICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065

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