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1. 发明专利

JPH01176634A ELECTRON BEAM-EXCITING ION SOURCE 失效
公开(公告)号：JPH01176634A
公开(公告)日：1989-07-13
申请号：JP33216987
申请日：1987-12-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , KOSHIISHI AKIRA , MATSUDO MASAHIKO , KAWAMURA GOHEI , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To increase ion current density, shorten processing time and increase throughput by accelerating electrons with a single perforated electrode having a multiplicity of electron passage holes and disposed at a boundary area between an electron generating are and an ion generating area. CONSTITUTION:It is constituted such that a single porous electrode 5 having a multiplicity of electron passage holes 5a is disposed at a boundary area between an electron generating area 8 and an ion generating area 9 to accelerate electrons by applying a voltage to a container 7a. In an ion beam-excited ion source for example, the area between a cathode 2 and an anode 5 is made to be the electron generating area while the area between the anode 5 and an ion draw-out slit 7 is made to be the ion generating area 9 where electrons are accelerated to produce ions. This constitution enables to increase ion current density, shorten processing time, and increase throughput.

2. 发明专利

JPH01176632A ELECTRON BEAM-EXCITING ION SOURCE 失效
公开(公告)号：JPH01176632A
公开(公告)日：1989-07-13
申请号：JP33216787
申请日：1987-12-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , KAWAMURA GOHEI , KOSHIISHI AKIRA , MATSUDO MASAHIKO , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To increase the throughput with a reduced processing time by arranging a reaction gas supply port for supplying the reaction gas to an ion generating area in the vicinity of a side end portion of an electron generating area of the ion generating area. CONSTITUTION:The area between a cathode 2 and an anode 5 is made to be an electron generating area while the area between the anode 5 and an ion drawing out slit 7 is made to be an ion generating area 9 where the electrons generated in the electron generating area are accelerated and ionized by irradiating to a reaction gas. Further, a reaction gas supply port 10 is disposed at the side end portion of the electron generating area 8 of the ion generating area 9. This constitution enables to obtain a high ion current density, to reduce the time required for ion implantation, and to increase throughput.

3. 发明专利

JPH01176633A ELECTRON BEAM-EXCITING ION SOURCE 失效
公开(公告)号：JPH01176633A
公开(公告)日：1989-07-13
申请号：JP33216887
申请日：1987-12-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , MATSUDO MASAHIKO , KOSHIISHI AKIRA , KAWAMURA GOHEI , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To make it possible to form uniform plasma of a large diameter in an ion generating area by making an ion beam produced with an ion generating device a diffused flow. CONSTITUTION:Outside a closed container 1 is disposed an annularly formed hollow-core coil 8. Between an orifice 4 of the closed container 1 and an anode 5 is disposed a layer consisting of a material of a high permeability, for example an iron layer 9, so as to surround the circumference of the container 1. The magnetic field formed by energizing the hollow-core coil 8 in the closed container 1 runs as shown with dotted line in the drawing to expand in the direction of the iron layer 9 inside the iron layer 9, namely in the direction of the rim or the closed container 1, and runs approximately linearly in other parts. Since electrons are deflected in this electron generating area to expand in the direction of the rim of the electron generating area and uniformly enter an ion generating area where ions are generated, it is possible to form uniform plasma of a large diameter in the ion generating area.

4. 发明专利

JPH01176631A ELECTRON BEAM EXCITING ION SOURCE 失效
公开(公告)号：JPH01176631A
公开(公告)日：1989-07-13
申请号：JP33216687
申请日：1987-12-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , KOSHIISHI AKIRA , MATSUDO MASAHIKO , KAWAMURA GOHEI , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To make it possible to obtain an electron current density similar to that obtained with an electron beam-excited ion source of the conventional plasma discharge type without the cathode being sputtered and worn, by generating electrons by means of a thermoelectron generating means consisting of an electron emitting substance and a means for heating the substance. CONSTITUTION:In an electron emitting substance holding section 5 is held barium oxide strontium 6 for example as an electron emitting substance. The electron emitting substance holding section 5 is closed with an electron acceleration cathode 7 made for example of porous tungsten plate or the like to constitute a thermoelectron generating device 8. Thermoelectrons are generated with the thermoelectron generating device 8 which heats the barium oxide strontium 6 by means of a heater 1. Since a closed container 2 holding the heater 1 is of a high vacuum, no plasma is produced in the vicinity of the heater 1, and there is no possibility of this heater 1 being sputtered and worn with plasma cation.

5. 发明专利

JP2724461B2 失效
公开(公告)号：JP2724461B2
公开(公告)日：1998-03-09
申请号：JP33216987
申请日：1987-12-30
申请人： TOKYO EREKUTORON KK , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , KOSHIISHI AKIRA , MATSUDO MASAHIKO , KAWAMURA GOHEI , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08

6. 发明专利

JPH03222241A ION SOURCE DEVICE 失效
公开(公告)号：JPH03222241A
公开(公告)日：1991-10-01
申请号：JP1741790
申请日：1990-01-25
申请人： TOKYO ELECTRON LTD
发明人： KAWAMURA GOHEI , MATSUDO MASAHIKO , TAKAYAMA NAOKI , KOSHIISHI AKIRA
IPC分类号： H01J27/02 , H01J27/20 , H01J37/08
摘要： PURPOSE:To suppress temperature rise near an ion source so as to prevent generation of vacuum leakage or the like due to damage of an O-ring or the like by providing a means, which is provided for blocking the opening of a vacuum chamber so as to cool a supporting plate for supporting an ion source. CONSTITUTION:An opening 2 is formed on the end part of a vacuum chamber 1, a ring-shaped member 4 is fixed through an O-ring 3 so as to form a flange having a step on the side of the peripheral part of the opening 2 while providing the ring-shaped part 4 with a ring-shaped coolant flow passage 5 in its inside. The opening 2 is provided with a disk-shaped supporting plate 6 so as to airtightly block the opening 2, the supporting plate 6 is engagingly locked to the ring-shaped member 4 through the O-ring 7 to come in contact with the flange side face and fixed thereto to be freely mounted and dismounted. In this case, the coolant is forced to circulate through the coolant flow passage 5 provided on the ring-shaped member 4 housing the O-ring 7, so as to cool the supporting plate 6. Thereby, for instance, the O-ring 7 or the like interposed between the supporting plate 6 and the ring-shaped member 4 is prevented from being damaged due to heat resulting in generation of vacuum leakage or the like.

7. 发明专利

JPH03219540A ION SOURCE 失效
公开(公告)号：JPH03219540A
公开(公告)日：1991-09-26
申请号：JP5887090
申请日：1990-03-09
申请人： TOKYO ELECTRON LTD
发明人： KOSHIISHI AKIRA , MATSUDO MASAHIKO
IPC分类号： H01J27/20 , H01J37/08 , H01J37/317 , H01L21/265
摘要： PURPOSE:To improve maintenance property by making an ion output part removable and attachable to an ion generating part. CONSTITUTION:An ion generating chamber, which is made of Mo, has an opening 1a and a wedge engaging channel 1b outside thereof on one surface, and a starting gas introducing hole 1c on the side wall opposed to the opening 1a. An ion output part 2 is formed of a Mo plate having a slit opening 2a in the center and a wedge channel 2b engageable to the engaging channel 1b of the ion generating chamber 1 on the inside thereof. When the channels 1b, 2b are engaged to each other, the ion output part 2 is removable and attachably locked in such a manner as covering the opening 1a of the ion generating chamber 1, and a cylindrical space is formed in the ion generating chamber 1. According to this constitution, the exchange of the ion output part 2 is easy when it is worn, and maintenance property is improved.

8. 发明专利

JPH02312141A ION SOURCE 失效
公开(公告)号：JPH02312141A
公开(公告)日：1990-12-27
申请号：JP13208489
申请日：1989-05-25
申请人： TOKYO ELECTRON LTD
发明人： MATSUDO MASAHIKO
IPC分类号： H01J27/08 , H01J27/20 , H01J37/077 , H01J37/08 , H01L21/265
摘要： PURPOSE:To lengthen the life and to improve the safety by providing a mechanism, which prevents adhesion of substances sputtered from a filament, at least at one part of the region between supports which support both ends of a filament. CONSTITUTION:Filament supporting mechanisms 23 and 24 are so constituted that they are inserted in through holes 21 and 22 from the inwall side of an insulating member 2, in the conditions that the insulating member 2 is removed from an electron generating chamber 1, and are fastened by nuts 25 and 26. Moreover, sputtered substance adhesion preventive mechanisms 27 and 28, which prevent sputtered substances, scattered due to the sputtering applied to the filament 3, from adhering to the region, to become shade to the filament 3, being formed at the surface of the inwall of the insulating member 2 constituted in disc shape, are provided at the filament 3 fixing side ends of the filament supporting mechanisms 23 and 24. Hereby, the extension of the life ion sources and the improvement of safety can be realized.

9. 发明专利

JP2001196326A METHOD OF FORMING TUNGSTEN SILICIDE FILM AND METHOD OF MANUFACTURING GATE ELECTRODE/WIRING 失效
公开(公告)号：JP2001196326A
公开(公告)日：2001-07-19
申请号：JP2000002217
申请日：2000-01-11
申请人： TOKYO ELECTRON LTD
发明人： MATSUDO MASAHIKO , SUZUKI KENJI , OKUBO KAZUYA
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To solve a problem that a void V is formed inside an electrode or a wiring of polyside structure in a formation stage in which the electrode and the wiring are formed, and with a reduction in size and resistance of an electrode and a wiring, the adverse effect of the void V gets actualized to deteriorate the manufacture of the electrode and wiring in yield. SOLUTION: A tungsten silicide film is formed through such a manner that when a tungsten silicide layer is formed on a polysilicon layer, phosphorus atom-containing gas is added to reactive gas in an initial stage in which the tungsten silicide layer is formed, and the amount of phosphorus atom-containing gas added to the reactive gas is set at 0.2 to 0.45 vol.%.

10. 发明专利

JPH03219539A METHOD AND DEVICE FOR FORMING ION 失效
公开(公告)号：JPH03219539A
公开(公告)日：1991-09-26
申请号：JP5886890
申请日：1990-03-09
申请人： TOKYO ELECTRON LTD
发明人： MATSUDO MASAHIKO
IPC分类号： H01J27/20 , H01J37/08 , H01J37/317 , H01L21/265
摘要： PURPOSE:To efficiently form various ions by colliding an initial ions to a solid starting material for sputtering, and colliding electrons to the sputtered solid particles. CONSTITUTION:A filament 14 is heated, a discharge voltage is applied to an electron generating chamber 12, and an electron drawing voltage is applied between the chamber and a porous electrode 20 and between the electrode 20 and an ion forming chamber 21. Ar is introduced into the chamber 12 and excited by thermions to generate a plasma, which is accelerated and drawn into the chamber 21 through a hole 19 to form Ar ion I1. The electrons reach a solid starting material 1 electrically floating on a bottom plate 22 to electrify the surface to negative. Thus, Ar ion is sputtered on the solid starting material 1 to form desired ions. These ions are drawn from a slit 25 and utilized. According to such forming method and device, even high melting point metal ions can be efficiently formed.

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