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21. 发明专利

JPS59117261A One dimension photosensor 失效
标题翻译：一维照相机
公开(公告)号：JPS59117261A
公开(公告)日：1984-07-06
申请号：JP22632282
申请日：1982-12-24
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： HORI GIICHI
IPC分类号： H04N1/028 , H01L21/339 , H01L27/146 , H01L27/148 , H01L29/762
CPC分类号： H01L27/14825
摘要： PURPOSE:To obtain an image signal efficiently, by making gates common for every MOSFET group of transfer gates, which are divided into several units, providing a variable bit length in a combination of bits which supply a timing output to each gate, thereby selecting the optimum bit length for a scanning area. CONSTITUTION:When an output bit length is 512 bits, control signals C1-C3 are set at a logic ''1''. Then timing signals phig1-phig4 are simultaneously supplied to all transfer gates MOSFET 2a and 2b, and an image signal formed by 512 photodiodes is outputted. When a scanning area is made small and all the control signals C1-C3 are made to be logic ''0'', the image signal is outputted from 128 photodiodes. The transfer time is reduced to 1/4. The contents of CCD registers 3a and 3b are automatically cleared by the last bit. Therefore extra processing such as cut out of unnecessary image signal can be eliminated, and the efficient scanning in correspondence with the size of an object can be performed.
摘要翻译：目的：为了有效地获得图像信号，通过将分为多个单元的传输门的每个MOSFET组共用门，在向每个栅极提供定时输出的位组合中提供可变位长度，从而选择扫描区域的最佳位长度。构成：当输出位长度为512位时，控制信号C1-C3设置为逻辑“1”。然后定时信号phig1-phig4同时提供给所有传输门MOSFET 2a和2b，并且输出由512个光电二极管形成的图像信号。当扫描区域变小并且所有控制信号C1-C3变为逻辑“0”时，图像信号从128个光电二极管输出。传输时间减少到1/4。 CCD寄存器3a和3b的内容由最后一位自动清零。因此，可以消除诸如切出不需要的图像信号的额外处理，并且可以执行与对象的尺寸相对应的有效扫描。

22. 发明专利

JPS5974629A Dry etching device 失效
标题翻译：干蚀设备
公开(公告)号：JPS5974629A
公开(公告)日：1984-04-27
申请号：JP18448082
申请日：1982-10-22
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： SAKAMOTO HIROAKI , YOSHIDA KIYOSHI
IPC分类号： H01L21/302 , H01J37/32
CPC分类号： H01J37/3244
摘要： PURPOSE:To equalize the speed of an etching gas being in contact with a semiconductor wafer by ejecting the etching gas from a peripheral section in a vacuum chamber and disposing a guide so that the gas flows spirally toward a central section as a gas discharge section from the peripheral section. CONSTITUTION:A reactive gas previously mixed in a reactive gas mixing chamber 11 enters in a reactive gas introducing ring 3 through a conduit, is ejected from the peripheral section of an etching chamber as reactive gas jets from a gas path corresponding to the opening of a guide vane, and flows spirally toward the central section as a gas discharge port and is discharged at that time. Accordingly, the gas is in contact with a plurality of the wafers 4 arranged in the chamber as uniform flows without deviation, and the wafers can be etched with high accuracy without variance.
摘要翻译：目的：通过从真空室中的周边部分喷射蚀刻气体并且设置引导件使得气体朝向作为气体放电部的中心部分的气体流动而平均化与半导体晶片接触的蚀刻气体的速度，外围部分。构成：预先混合在反应性气体混合室11中的反应性气体通过导管进入反应气体引入环3，作为反应气体从与蚀刻室的开口对应的气体路径的反应气体喷射，导向叶片，并且作为气体排出口螺旋地朝向中心部分流动，并且此时被排出。因此，气体与布置在腔室中的多个晶片4接触，没有偏差地均匀流动，并且可以以高精度无差异地蚀刻晶片。

23. 发明专利

JPS5923532A Wire bonder 失效
标题翻译： WIRE BONDER
公开(公告)号：JPS5923532A
公开(公告)日：1984-02-07
申请号：JP13196982
申请日：1982-07-30
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： FUJIOKA SHIYUNICHIROU
IPC分类号： H01L21/60
CPC分类号： H01L2224/45 , H01L2224/45124 , H01L2224/78 , H01L2224/78268 , H01L2224/78301 , H01L2224/85 , H01L2224/85045 , H01L2924/00014 , H01L2924/01013 , H01L2224/48 , H01L2924/00012 , H01L2924/00
摘要： PURPOSE:To preferably perform a bonding with a stable ball by varying the voltage or current over discharge starting period, ball forming period and stable ball forming period when applying a high voltage between a fine metal wire and an opposite electrode to form by discharge a metal ball at the end of the wire, thereby obtaining stable ball. CONSTITUTION:A capillary 11 which is passed through a bonding arm 12 is disposed on a movable lower electrode 14, and aluminum or aluminum alloy wire 12 inserted into the capillary 11 is contacted with an article to be welded and placed on the electrode 14. Then, a high voltage is applied from a power source 15 connected to the capillary 11 and the electrode 14 to produce a discharge therebetween for bonding. In this configuration, a control unit 16 which can control the high voltage value in an ageing menner is connected to the power source 15, and a synchronizing signal generator 17 having the prescribed timing is connected to the mechanism which is connected to the arm 12 and the electrode 14. A voltage detector 18 is provided in the circuit of the power source 15.
摘要翻译：目的：为了优选通过改变电压或电流超过放电开始周期，球形成周期和稳定的球形成周期，通过在金属细线和相对电极之间施加高电压以形成通过放电金属而形成稳定的球球线末端，从而获得稳定的球。构成：穿过结合臂12的毛细管11设置在可动下电极14上，插入毛细管11中的铝或铝合金线12与待焊接物品接触并放置在电极14上。然后从连接到毛细管11和电极14的电源15施加高电压以在其间产生用于接合的放电。在这种结构中，将能够控制老化时的高电压值的控制部16连接到电源15，将具有规定时机的同步信号发生器17连接到与臂12连接的机构，在电源15的电路中设置有电压检测器18。

24. 发明专利

JPS5923517A Resist removing method and apparatus therefor 失效
标题翻译：电阻去除方法及其装置
公开(公告)号：JPS5923517A
公开(公告)日：1984-02-07
申请号：JP13197182
申请日：1982-07-30
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： TAKAGAKI TETSUYA , MAEJIMA HIROSHI , NAGATOMO HIROTO , NANKOU SUSUMU
IPC分类号： H01L21/027 , G03F7/16 , H01L21/30
CPC分类号： G03F7/162
摘要： PURPOSE:To get rid of generation of foreign substance by a resist layer and defect in appearance, by a method wherein when a resist is applied onto a semiconductor wafer using a spinner, unrequired resist adhered at peripheral part of a wafer is removed using a solvent. CONSTITUTION:A semiconductor wafer 3 to be coated with a resist film 7 is put onto a rotating spinner 14, and an upper cap 11 having a nozzle 15 is disposed on the semiconductor wafer 3. The spinner 14 is elevated and brought close to the nozzle 15 and the resist 7 spouted from the nozzle is applied onto the wafer 3 rotating at high speed and the residual resist 7 is discharged out of an outlet port 17. Since the swollen resist 7 is adhered to surrounding part of the wafer 3, the resist 7 is removed in following manner. The spinner 14 is moved downwards and rotated at low speed and contacted with air flowing between an inlet port 16 and an outlet port 18, and a resist solvent 20 in an inner vessel 19a surrounding the spinner 14 is contacted with the resist 7 at peripheral part and solved. And then the waste liquid is fallen into an outer vessel 19b.
摘要翻译：目的：为了通过抗蚀剂层除去异物的产生和外观缺陷，通过以下方法，其中当使用旋转器将抗蚀剂施加到半导体晶片上时，使用溶剂除去粘附在晶片的周边部分的不需要的抗蚀剂。构成：将要涂覆有抗蚀剂膜7的半导体晶片3放置在旋转的旋转器14上，并且具有喷嘴15的上盖11设置在半导体晶片3上。旋转器14升高并靠近喷嘴 15并且从喷嘴喷出的抗蚀剂7被施加到高速旋转的晶片3上，并且残余抗蚀剂7从出口17排出。由于溶胶抗蚀剂7粘附到晶片3的周围部分，所以抗蚀剂 7以下列方式移除。旋转器14向下移动并以低速旋转并与在入口端口16和出口端口18之间流动的空气接触，并且围绕旋转器14的内部容器19a中的抗蚀剂溶剂20与边缘部分处的抗蚀剂7接触解决了。然后将废液倒入外容器19b中。

25. 发明专利

JPS5919339A Feeder mechanism with heater 失效
标题翻译：喂料机构与加热器
公开(公告)号：JPS5919339A
公开(公告)日：1984-01-31
申请号：JP12767382
申请日：1982-07-23
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： WATANABE KENJI , YAMAZAKI ISAMU , SUMIYA OSAMU , ARASHIMA TERUO , ISHII YASUSHI
IPC分类号： H01L21/52 , H01L21/60
CPC分类号： H01L2224/48245 , H01L2224/48247 , H01L2224/78301 , H01L2224/78344 , H01L2224/85 , H01L2924/01082 , H01L2924/00012
摘要： PURPOSE:To effectively prevent in advance an accident due to overheat in a feeder mechanism with a heater by automatically separating the heater from an article to be fed when a malfunction occurs. CONSTITUTION:A lead frame 1 is fed at a pitch along a chute 3, and disposed at the desired position. A pellet 2 and the lead frame 1 are bonded by a wire bonder 4 while heated at the desired temperature by a heat block 7. When a malfunction occurs in this working, a malfunction detector 12 detects the malfunction, stops the operation of the bonder 4 and reversely rotates a motor 11. A cam 9 is reversely rotated by the reverse rotation of the motor 11, and the heat block 7 is separated through a lever 8 from the lower surface of the lead frame 1.
摘要翻译：目的：通过在发生故障时自动将加热器与要进给的物品分离，从而有效地防止由加热器进给机构过热引起的事故。构成：引线框架1沿着斜槽3以间距进给，并且设置在所需位置。颗粒2和引线框架1通过加热块7在所需温度下加热时由引线接合器4接合。当该工作中发生故障时，故障检测器12检测故障，停止接合器4的操作并使电动机11反向旋转。凸轮9通过马达11的反向而反向旋转，并且加热块7通过杆8从引线框架1的下表面分离。

26. 发明专利

JPS5919338A Ultrafine article inspecting device 失效
标题翻译：超声波检查装置
公开(公告)号：JPS5919338A
公开(公告)日：1984-01-31
申请号：JP12767282
申请日：1982-07-23
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： YOSHIDA HISASHI
IPC分类号： H01L21/66 , H01L21/50 , H01L21/60
CPC分类号： H01L21/67271
摘要： PURPOSE:To improve the through-put of an ultrafine article inspecting device by simultaneously inspecting a plurality of ultrafine articles together with a plurality of inspecting means, thereby reducing the stopping time of the device and improving the inspecting efficiency. CONSTITUTION:Pellets 7 are placed in advance in substantially aligned state on a table 9, on which a wafer ring 8 is bonded on an X-Y table 14. These pellets 7 contain good and bad ones, and an ink mark 16 is put on the bad pellet. The table 14 feeds the pellet 7 at every one pitch in X and Y directions. At this time image pickup tubes 20a, 20b simultaneously inspect two pellets 7. An image processor 21 processes the electric signals of the tubes 20a, 20b to select the good pellet and to store it in a memory 22. A pickup unit 23 picks up the good pellet on the basis of the storage and supplies it to a pellet attaching mechanism.
摘要翻译：目的：通过与多个检查装置同时检查多个超细物品，改善超细物品检查装置的通过，从而减少装置的停止时间并提高检查效率。构成：将颗粒7预先放置在基板上的状态下，在桌子9上放置一个晶片环8，并在XY台14上接合。这些颗粒7包含好的和不好的，并且墨迹16被放在坏的位置上沉淀。台14在X和Y方向上以每一个间距进给颗粒7。此时，图像拾取管20a，20b同时检查两个颗粒7.图像处理器21处理管20a，20b的电信号，以选择良好的颗粒并将其存储在存储器22中。拾取单元23拾取在储存的基础上形成良好的颗粒并将其供应到颗粒附着机构。

27. 发明专利

JPS5919337A Lead position recognition device 失效
标题翻译：引导位置识别装置
公开(公告)号：JPS5919337A
公开(公告)日：1984-01-31
申请号：JP12766982
申请日：1982-07-23
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： TAKASUGI NOBUHIRO , SUZUMURA YOSHIKAZU , TAKASHIMA KAZUHISA
IPC分类号： H01L21/60
CPC分类号： H01L2224/78 , H01L2224/78801 , H01L2924/00014 , H01L2924/01039 , H01L2924/01082 , H01L2224/48 , H01L2924/00012
摘要： PURPOSE:To accurately and rapidly recognize the positions of leads by calculating the positions of the all leads after contraction with the all preset reference lead positions and two specific lead positions after the leads are contracted. CONSTITUTION:Lead position coordinates before a ceramic base 1 is baked are set as reference leads by a setter 2, and stored in a memory 3. The base 1 is placed on an X-Y table 4, and the position coordinates of two specific leads disposed at suitable distance formed on the base 1 are detected by the cooperation of the table and an ITV camera 5. The detected coordinates are inputted to the memory 3. An arithmetic unit 6 calculates the prescribe calculation on the basis of the data stored in the memory 3, and calculates the lead positions after the desired leads are contracted.
摘要翻译：目的：通过在引线收缩后，使用所有预设的参考引导位置和两个特定的引导位置计算收缩后所有引线的位置，准确快速地识别引线的位置。构成：陶瓷基座1烘烤前的引线位置坐标由设定器2设定为基准引线，并存储在存储器3中。基座1被放置在XY工作台4上，两个特定引线的位置坐标位于通过桌子和ITV照相机5的协作来检测形成在基座1上的合适距离。检测到的坐标被输入到存储器3.运算单元6基于存储在存储器3中的数据来计算规定计算，并计算所需引线收缩后的引导位置。

28. 发明专利

JPS5727032A Plasma cvd device 失效
标题翻译：等离子体CVD装置
公开(公告)号：JPS5727032A
公开(公告)日：1982-02-13
申请号：JP10112680
申请日：1980-07-25
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： AKIBA MASAKUNI , NAGATOMO HIROTO , YOSHIMI TAKEO , SUZUKI JIYUN , HIRAIWA ATSUSHI , SAKAI HIDEO , HOSHINO KUNIO , SAKAI KIYOMI , YONEMITSU KAZUHIKO
IPC分类号： H01L21/205 , C23C16/50 , H01L21/31
CPC分类号： C23C16/50
摘要： PURPOSE:To contrive to simplify equipment of a wafer in a plasma CVD device and to improve a growth film by a method wherein wafer supporting rings are equipped in penetrating holes formed in the upper part electrode in a reaction furnace, and a chamber to be fed with reaction gas and having plural fine holes for spouting of reaction gas is provided in the lower part electrode. CONSTITUTION:A supporting ring 22 having plural protruding nails 22a at the inside circumferential edge is engaged in a penetrating hole 21 provided on the upper part electrode 3 and having a little larger diameter than the wafer W, and when the wafer W is inserted in the supporting ring 22 from the upper part, the wafer positions itself automatically at the center of the ring and is supported by the protruding nails 22a. While reaction gas fed through a center hollow shaft 9 of the lower part electrode 2 is introduced in the disk type chamber 28 in the lower part electrode 2, and is spouted out uniformly in a bell jar 1 through the plural fine holes 24, and distribution of gas is unified. Accordingly equipping work of the wafer W to the upper part electrode 3 is simplified without trouble, and equilization of the growth film and enhancement of growth speed and quality of the product can be attained.
摘要翻译：目的：为了简化等离子体CVD装置中的晶片的设备，并且通过其中晶片支撑环装配在反应炉中的上部电极中形成的穿透孔中的方法，以及要供给的腔室来改善生长膜在下部电极中设置反应气体并具有多个用于喷射反应气体的细孔。构成：在内周缘具有多个突出的指甲22a的支撑环22被接合在设置在上部电极3上并且具有比晶片W稍大的直径的贯通孔21中，并且当将晶片W插入到支撑环22从上部开始，晶片自身位于环的中心并由突出的指甲22a支撑。通过下部电极2的中心空心轴9供给的反应气体被引入到下部电极2的圆盘型室28中，并且通过多个细孔24在钟罩1中均匀地喷出，分布的气体是统一的。因此，将晶片W配置到上部电极3的工作简单化，并且可以实现生长膜的等效化，生产速度的提高和产品质量的提高。

29. 发明专利

JPS5726852A Dry plate and manufacture of photomask from dry plate 失效
标题翻译：干燥板的干燥板和制造
公开(公告)号：JPS5726852A
公开(公告)日：1982-02-13
申请号：JP10112480
申请日：1980-07-25
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： SATOU TETSUROU , OKETA YUKIHIRO
IPC分类号： G03F1/00 , G03F1/58 , G03F7/004
CPC分类号： G03F7/2016 , G03F1/50
摘要： PURPOSE:To obtain a photmask which has omitted emulsion baking under a high temperature, and a reverse phenomenon, and has improved size, accuracy, etc., by using a dry plate which has laminated in order a metallic layer, a resist layer and an emulsion layer, on a transparent glass plate. CONSTITUTION:A dry plate 1 is prepared by providing in order a metallic layer 3 such as Cr, etc., a resist layer 4 and a halogen silver emulsion layer 5, on a transparent glass plate 2. The first exposure is executed to the emulsion layer 5 in order to form a pattern on the dry plate, by use of a xenon lamp, etc. Subsequently, development, fixing and washing are performed. After that, the resist layer 4 is given the second exposure by ultraviolet rays by making an opaque area of the layer 5 a mask. A resist image except the emulsion layer 5 is developed. the resist image is post-baked in order to raise its adhesive property to the metallic layer 3, and after that, a pattern is obtained by etching the layer 3. subsequently, a reticle or a photomask is obtained by removing the resist 4. In this way, accuracy which causes no notches in the pattern edge, and a photomask which is free from a defect in appearance are obtained.
摘要翻译：目的：通过使用依次层叠有金属层，抗蚀剂层和抗蚀剂层的干燥板，得到在高温下没有乳液烘烤，反转现象，并且具有改善的尺寸，精度等的光电掩模乳剂层，在透明玻璃板上。构成：通过在透明玻璃板2上提供诸如Cr等的金属层3，抗蚀剂层4和卤素银乳剂层5来制备干燥板1。对乳液进行第一次曝光层5，以通过使用氙灯等在干燥板上形成图案。随后，进行显影，定影和洗涤。之后，通过使层5的不透明区域成为掩模，通过紫外线对抗蚀剂层4进行第二次曝光。显影除了乳剂层5之外的抗蚀剂图像。为了提高其对金属层3的粘合性，对抗蚀剂图像进行后烘烤，之后，通过蚀刻层3获得图案。随后，通过除去抗蚀剂4获得掩模版或光掩模。这样，得到在图案边缘不产生凹口的精度，以及外观上没有缺陷的光掩模。

30. 发明专利

JP2006227026A Pattern test method and device 有权
标题翻译：模式测试方法和设备
公开(公告)号：JP2006227026A
公开(公告)日：2006-08-31
申请号：JP2006135165
申请日：2006-05-15
申请人： Hitachi Tokyo Electronics Co Ltd , Renesas Technology Corp , 日立東京エレクトロニクス株式会社 , 株式会社ルネサステクノロジ
发明人： NOZOE MARI , NISHIYAMA HIDETOSHI , HIJIKATA SHIGEAKI , WATANABE KENJI , ABE KOJI
IPC分类号： G01N23/225 , G01N21/956 , G01N23/203 , G01R31/302
摘要： PROBLEM TO BE SOLVED: To provide a test device and a test method for irradiating a substrate surface having a circuit pattern such as a semiconductor device with white light, laser beams, or electron beams for quickly and highly precisely observing, testing, and distinguishing detected surface roughness, shape defect, foreign matter, electrical defect and the like by means of the same device and allowing automated movement to an observed position, image capture, and classification.
SOLUTION: When an electron beam radiation condition, a detector, a detection condition and the like are designated according to the type of a defect to be observed in formation of an image formed by irradiating an observed position, which is specified based on positional information about the defect tested and detected by another test device, on a sample, an electrical defect can be observed with potential contrast. An acquired image is automatically sorted by an image processing part, and the result is added to a defect file to be outputted.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于利用白光，激光束或电子束照射具有诸如半导体器件的电路图案的衬底表面的测试装置和测试方法，用于快速高精度地观察，测试，并通过相同的装置区分检测到的表面粗糙度，形状缺陷，异物，电气缺陷等，并允许自动移动到观察位置，图像捕获和分类。解决方案：根据在形成通过照射观察位置形成的图像中观察到的缺陷的类型来指定电子束照射条件，检测器，检测条件等时，其基于可以观察到关于由另一测试装置测试和检测的缺陷的位置信息，样品上的电气缺陷，并具有潜在的对比度。所获取的图像由图像处理部分自动分类，并将结果添加到要输出的缺陷文件。版权所有（C）2006，JPO＆NCIPI

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