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    • 2. 发明专利
    • Wire bonder
    • WIRE BONDER
    • JPS5923532A
    • 1984-02-07
    • JP13196982
    • 1982-07-30
    • Hitachi LtdHitachi Tokyo Electronics Co Ltd
    • FUJIOKA SHIYUNICHIROU
    • H01L21/60
    • H01L2224/45H01L2224/45124H01L2224/78H01L2224/78268H01L2224/78301H01L2224/85H01L2224/85045H01L2924/00014H01L2924/01013H01L2224/48H01L2924/00012H01L2924/00
    • PURPOSE:To preferably perform a bonding with a stable ball by varying the voltage or current over discharge starting period, ball forming period and stable ball forming period when applying a high voltage between a fine metal wire and an opposite electrode to form by discharge a metal ball at the end of the wire, thereby obtaining stable ball. CONSTITUTION:A capillary 11 which is passed through a bonding arm 12 is disposed on a movable lower electrode 14, and aluminum or aluminum alloy wire 12 inserted into the capillary 11 is contacted with an article to be welded and placed on the electrode 14. Then, a high voltage is applied from a power source 15 connected to the capillary 11 and the electrode 14 to produce a discharge therebetween for bonding. In this configuration, a control unit 16 which can control the high voltage value in an ageing menner is connected to the power source 15, and a synchronizing signal generator 17 having the prescribed timing is connected to the mechanism which is connected to the arm 12 and the electrode 14. A voltage detector 18 is provided in the circuit of the power source 15.
    • 目的:为了优选通过改变电压或电流超过放电开始周期,球形成周期和稳定的球形成周期,通过在金属细线和相对电极之间施加高电压以形成通过放电金属而形成稳定的球 球线末端,从而获得稳定的球。 构成:穿过结合臂12的毛细管11设置在可动下电极14上,插入毛细管11中的铝或铝合金线12与待焊接物品接触并放置在电极14上。然后 从连接到毛细管11和电极14的电源15施加高电压以在其间产生用于接合的放电。 在这种结构中,将能够控制老化时的高电压值的控制部16连接到电源15,将具有规定时机的同步信号发生器17连接到与臂12连接的机构, 在电源15的电路中设置有电压检测器18。
    • 3. 发明专利
    • Sealing process of integrated circuit device
    • 集成电路设备的密封工艺
    • JPS60192352A
    • 1985-09-30
    • JP22576084
    • 1984-10-29
    • Hitachi Ltd
    • TANIMOTO MICHIOUEMATSU SHIYUNEISUGANO TOSHIOTAKASHIMA KAZUHISAFUJIOKA SHIYUNICHIROU
    • H01L23/02H01L21/50
    • H01L21/50
    • PURPOSE:To seal a semiconductor element regularly without heating the same by a method wherein a part of glass layer cracked or peeled off is partially and externally supplied with hot jet air, laser beams or infrared lays, etc. CONSTITUTION:During the bonding process of a lead 5, there exist a possibility that a glass layer 10 may be cracked or peeled off from the boundary due to the bonding force exerted on the lead 5. At this time, a part of glass layer 10 cracked or peeled off is partially heated by hot air 11 to soften and melt the glass again temporarily sealing the peeled off part or filling the cracked part with glass to remove the crack. The upper and lower parts of a base 1 and a cap 7 are not heated at all since the ends of nozzles 12 of jet air 11 are relatively displaced along the glass layer 10 for heating. The softened and melted part of glass layer 10 may be displaced slowly by means of shifting the nozzle 12 of hot jet air 11 to remove the crack or distortion on the glass layer 10 completely.
    • 目的:通过其中一部分玻璃层破裂或剥离的方法部分地和外部地供应热喷射空气,激光束或红外线敷设等方法来定期密封半导体元件而不加热半导体元件。构成:在粘合过程中 引线5,由于施加在引线5上的结合力,存在玻璃层10从边界破裂或剥离的可能性。此时,玻璃层10的一部分被剥离或剥离被部分加热 通过热空气11再次软化和熔融玻璃,暂时密封剥离的部分或用玻璃填充裂纹部分以除去裂纹。 底座1和盖7的上部和下部完全不加热,因为喷射空气11的喷嘴12的端部沿着玻璃层10相对移位以进行加热。 玻璃层10的软化和熔融部分可以通过移动热喷射空气11的喷嘴12而缓慢移动,以完全去除玻璃层10上的裂纹或变形。
    • 5. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS5998538A
    • 1984-06-06
    • JP20617882
    • 1982-11-26
    • HITACHI LTD
    • FUJIOKA SHIYUNICHIROUUEMATSU SHIYUNEI
    • H01L23/02H01L21/50H01L23/50
    • PURPOSE:To make a sealing operation simply and easily without using a sealing jig by making a hermetic seal by the method wherein a low-melting point glass for sealing is previously coated on a circumferential part of a lower surface of a cap which is placed on a sealed region of a lead frame and fusing of the low- melting glass in a sealing oven is done with leaving the cap on the lead frame. CONSTITUTION:In the process B, lead pins 14 on both sides are bent by a predetermined angle and a ceramic cap 16 which is previously coated with a low-melting point glass 17 for sealing on a circumferential part of its lower surface is put on a sealed region of an inner lead part 15 of a lead frame 10, a semiconductor element 12 and etc. from the upper. In the process C, a outer frame 11 slides along a guide groove of a chute keeping the set state of the devices which are carried into a sealing oven successively thereby. The low-melting point glass 17 on the circumferential part of the lower surface of the cap 16 is fused by heating and by following cooling, the cap 16 is sealed to be attached to a base 13 sandwiching the sealed region of the lead frame 10 and the semiconductor element 12 is hermetically sealed in a package.