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    • 15. 发明专利
    • Mems resonator and manufacturing method of mems resonator
    • MEMS谐振器的MEMS谐振器和制造方法
    • JP2008153817A
    • 2008-07-03
    • JP2006338042
    • 2006-12-15
    • Seiko Epson Corpセイコーエプソン株式会社
    • INABA SHOGOSATO AKIRAWATANABE TORUMORI TAKASHI
    • H03H3/007B81B3/00H01L29/84H03H9/00H03H9/24
    • H03H3/0073H03H9/1057Y10S977/721
    • PROBLEM TO BE SOLVED: To provide an MEMS resonator which simplifies processes to lower the cost and also simplifies a system to take noise countermeasures, and a manufacturing method of the MEMS resonator.
      SOLUTION: In the method for manufacturing an MEMS resonator 2 having a semiconductor device formed on a substrate 10 and an MEMS structure portion 4, the semiconductor device includes an ONO capacitor portion 6 having an upper electrode 30 and a lower electrode 26 and a COMS circuit portion 8, and the lower electrode 26 of the ONO capacitor portion 6 is formed using a first silicon layer 26, a lower structure 16 of the MEMS structure portion 4 and the upper electrode 30 of the NON capacitor portion 6 are formed using a second silicon layer 52, and an upper structure 18 of the MEMS structure portion 4 and a gate electrode 34 of a CMOS circuit portion 8 are formed using a third silicon layer 54.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种MEMS谐振器,其简化了降低成本的工艺,并简化了采取噪声对抗的系统,以及MEMS谐振器的制造方法。 解决方案:在具有形成在基板10和MEMS结构部分4上的半导体器件的MEMS谐振器2的制造方法中,半导体器件包括具有上电极30和下电极26的ONO电容部6, 使用第一硅层26形成ONO电容器部分6的COMS电路部分8和下电极26,MEMS结构部分4的下部结构16和非电容器部分6的上部电极30使用 使用第三硅层54形成MEMS结构部分4的第二硅层52和上部结构18以及CMOS电路部分8的栅电极34.权利要求:(C)2008,JPO&INPIT