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1. 发明专利

JP2010030021A Electronic device and manufacturing method therefor 审中-公开
标题翻译：电子设备及其制造方法
公开(公告)号：JP2010030021A
公开(公告)日：2010-02-12
申请号：JP2008197482
申请日：2008-07-31
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI TAKASHI
IPC分类号： B81B3/00 , B81C1/00
摘要： PROBLEM TO BE SOLVED: To provide a structure of an electronic device capable of properly etching a sacrificial layer to release a movable part even if a gap becomes smaller in an electronic device with the movable part having a gap from a function structure body constituting a function element, and a manufacturing method therefor.
SOLUTION: This electronic device 10 comprises a substrate 11, a function structure body 13 formed on the substrate and having a movable part 13m with a gap 13g at a lower part, a monitoring structure 14 formed of the same layer as the movable part on the substrate and having a deformation part 14m having a gap 14g at a lower part and vertically deformable more easily than the movable part due to its planar shape, and a detecting structure 14r fixed on the deformation part and taking a posture according to the deformation state of the deformation part.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够适当地蚀刻牺牲层以释放可移动部件的电子设备的结构，即使在电子设备中间隙变小时，可移动部件与功能结构体具有间隙构成功能元件及其制造方法。解决方案：该电子设备10包括基板11，形成在基板上的功能结构体13，具有在下部具有间隙13g的可移动部分13m，与可移动的相同层形成的监视结构14 部分在基板上，并且具有变形部分14m，其在下部具有间隙14g，并且由于其平面形状而比可移动部分更容易垂直变形;以及检测结构14r，固定在变形部分上并且根据变形部分的变形状态。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2010030020A Electronic device 审中-公开
标题翻译：电子设备
公开(公告)号：JP2010030020A
公开(公告)日：2010-02-12
申请号：JP2008197481
申请日：2008-07-31
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI TAKASHI , SATO AKIRA
IPC分类号： B81B3/00 , B81C1/00
摘要： PROBLEM TO BE SOLVED: To provide structure capable of reducing an influence of a charge in a dicing step of a substrate in an electronic device, disposed with a function element in a hollow part on the substrate, and a manufacturing method therefor.
SOLUTION: This electronic device 10 comprises a substrate 11, a function element 10X arranged on the substrate, and an element surrounding structure 10P provided on the substrate, and surrounding and defining a hollow part 10C disposed with the function element. At least one part of the element surrounding structure is constituted of conductors 17, 19, and wiring structures 17, 19 for electrically connecting the conductors are provided.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够减少电子器件中的基板的切割步骤中的电荷的影响的结构，其中所述电子器件中的功能元件设置在基板上的中空部分中，以及其制造方法。解决方案：该电子设备10包括基板11，布置在基板上的功能元件10X以及设置在基板上的元件周围结构10P，并且围绕并限定设置有功能元件的中空部10C。元件周围结构的至少一部分由导体17,19构成，并且提供用于电连接导体的布线结构17,19。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009242441A Water-based inkjet recording ink composition 审中-公开
标题翻译：水基喷墨记录墨水组合物
公开(公告)号：JP2009242441A
公开(公告)日：2009-10-22
申请号：JP2008087215
申请日：2008-03-28
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MUKAI HIROSHI , AOKI KATSUKO , MORI TAKASHI , SAKIYAMA HIROSHI , SEKO TOMOAKI , BESSHO KEIICHI
IPC分类号： B41J2/01 , B41M5/00 , B82Y30/00 , C09D11/00 , C09D11/322 , C09D11/326 , C09D11/38
CPC分类号： C09D11/30 , B41M5/0023 , B41M5/0064 , B41M7/009 , Y10T428/24802
摘要： PROBLEM TO BE SOLVED: To provide a water-based inkjet recording ink composition being excellent in rubbing-resistance and water-resistance and also excellent in delivery stability relative to a recording medium of low liquid absorption property such as a plastic base material. SOLUTION: In the ink composition, at least a polymer obtained by emulsion polymerizing a monomer having one ethylenic unsaturated bond in the molecule and divinylbenzene under a reactive emulsifier, a polyethylene-based wax, a water-soluble resin, water and a coloring material are contained. The 60° glossiness of the ink coating film when the liquid drop of the ink composition is delivered and deposited on a plastic film having 60° glossiness of 140-150 to form an ink coating film is in a range of 50-120. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种水溶性耐水性和耐水性优异的水性喷墨记录油墨组合物，相对于液体吸收性低的记录介质，如塑料基材，也具有优异的输送稳定性。解决方案：在油墨组合物中，至少在分子内具有一个烯属不饱和键的单体乳液聚合得到的聚合物和反应性乳化剂下的二乙烯基苯，聚乙烯基蜡，水溶性树脂，水和包含着色材料。当油墨组合物的液滴被递送并沉积在具有140°F°60°光泽度的塑料膜上以形成油墨涂膜时，油墨涂膜的60°光泽度在50-120的范围内。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009226794A Manufacturing method for inkjet recording head, inkjet recording head, and inkjet recording device 审中-公开
标题翻译：喷墨记录头，喷墨记录头和喷墨记录装置的制造方法
公开(公告)号：JP2009226794A
公开(公告)日：2009-10-08
申请号：JP2008076375
申请日：2008-03-24
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI TAKASHI , KANEMOTO HIROSHI , TAKAGI NARIKAZU
IPC分类号： B41J2/16 , B41J2/045 , B41J2/055
CPC分类号： B41J2002/1437
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for an inkjet recording head which eliminates bonding of substrates and prevents an adhesive from blocking a nozzle opening, and to provide an inkjet recording head, and an inkjet recording device.
SOLUTION: The manufacturing method includes: the step of forming a passage formation film 10 on the surface side of the substrate 1 having a driver circuit 3; the step of forming a groove in the passage formation film 10; the step of filling the groove with a sacrificial film; the step of forming a vibration film 30 on the sacrificial film and the passage formation film 10; the step of etching the vibration film 30, thereby forming a through-hole h that has the sacrificial film as its bottom face; the step of etching the substrate 1 from the back side, thereby forming a reservoir 5; the step of etching the passage formation film 10, thereby forming a nozzle opening 22; the step of etching and removing the sacrificial film via the reservoir 5 and the through-hole h; and the step of forming a piezoelectric element 50 on the vibration film 30, thereby blocking the through-hole h.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种消除基板粘合并防止粘合剂阻塞喷嘴开口并提供喷墨记录头和喷墨记录装置的喷墨记录头的制造方法。解决方案：制造方法包括：在具有驱动电路3的基板1的表面侧上形成通道形成膜10的步骤; 在通道形成膜10中形成槽的步骤; 用牺牲膜填充凹槽的步骤; 在牺牲膜和通道形成膜10上形成振动膜30的步骤; 蚀刻振动膜30的步骤，从而形成具有牺牲膜作为其底面的通孔h; 从背面蚀刻基板1的步骤，从而形成储存器5; 蚀刻通道形成膜10的步骤，从而形成喷嘴开口22; 通过储存器5和通孔h蚀刻和去除牺牲膜的步骤; 以及在振动膜30上形成压电元件50的步骤，从而阻挡通孔h。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009051005A Manufacturing method of mems-semiconductor composite circuit 有权
标题翻译： MEMS半导体复合电路的制造方法
公开(公告)号：JP2009051005A
公开(公告)日：2009-03-12
申请号：JP2008253517
申请日：2008-09-30
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： SATO AKIRA , WATANABE TORU , INABA SHOGO , MORI TAKASHI
IPC分类号： B81C1/00 , H01L21/8234 , H01L27/06
摘要： PROBLEM TO BE SOLVED: To reduce a manufacturing cost by reducing the number of processes without sacrificing a performance by integrally forming a sacrifice layer for forming an MEMS structure and a structural layer provided so as to be in contact with this sacrifice layer, with a manufacturing process of constitutional elements. SOLUTION: A manufacturing method of an MEMS-semiconductor composite circuit provided with a semiconductor substrate 10, and the MEMS structure 20S and a semiconductor element 30S provided on a surface layer part of the semiconductor substrate, includes: a first forming step of forming the sacrifice layer 23 and simultaneously forming an element insulating film 31; a second forming step of forming the MEMS structural layer 24 so as to be in contact with the sacrifice layer and simultaneously forming an element electrode layer 32; and a release step of removing the sacrifice layer so that the MEMS structural layer is operated. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了通过一体地形成用于形成MEMS结构的牺牲层和设置成与该牺牲层接触的结构层，通过减少工艺数而不牺牲性能来降低制造成本，具有宪法要素的制造过程。解决方案：设置有半导体衬底10的MEMS半导体复合电路的制造方法以及设置在半导体衬底的表层部分上的MEMS结构20S和半导体元件30S包括：第一形成步骤形成牺牲层23并同时形成元件绝缘膜31; 形成MEMS结构层24以与牺牲层接触并同时形成元件电极层32的第二形成步骤; 以及去除牺牲层以使得MEMS结构层被操作的释放步骤。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008221394A Method for manufacturing mems structure, and method for manufacturing semiconductor device 审中-公开
标题翻译：制造MEMS结构的方法和制造半导体器件的方法
公开(公告)号：JP2008221394A
公开(公告)日：2008-09-25
申请号：JP2007062979
申请日：2007-03-13
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI TAKASHI , SATO AKIRA
IPC分类号： B81C1/00
摘要： PROBLEM TO BE SOLVED: To realize a manufacturing technique for efficiently manufacturing a MEMS (Micro Electro Mechanical System) structure.
SOLUTION: This MEMS structure is provided with processes of: forming an insulating film 11 on a substrate 10; forming MEMS function structure parts 12, 14, 15A, 15B, 16A and 16B on the insulating film 11; forming a sidewall 18S on a side surface at an edge part of each of the MEMS function structure parts and removing the insulating film 11 by leaving parts coated with the MEMS function structure parts and the sidewall; and removing the sidewall 18S.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：实现用于有效地制造MEMS（微机电系统）结构的制造技术。解决方案：该MEMS结构具有以下工艺：在衬底10上形成绝缘膜11; 在绝缘膜11上形成MEMS功能结构部分12,14,15A，15B，16A和16B; 在每个MEMS功能结构部件的边缘部分的侧表面上形成侧壁18S，并且通过留下涂有MEMS功能结构部件和侧壁的部件来去除绝缘膜11; 并移除侧壁18S。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2008119818A Mems device and its manufacturing method 审中-公开
标题翻译： MEMS器件及其制造方法
公开(公告)号：JP2008119818A
公开(公告)日：2008-05-29
申请号：JP2007131317
申请日：2007-05-17
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： INABA SHOGO , SATO AKIRA , WATANABE TORU , MORI TAKASHI
IPC分类号： B81B3/00 , B81C1/00
摘要： PROBLEM TO BE SOLVED: To provide an MEMS device having an excellent operating characteristic by reducing an electric resistance while retaining a mechanical characteristic of a structural body and its manufacturing method.
SOLUTION: This MEMS device has a fixed electrode 50 made of silicon formed on a silicon substrate 41, a movable electrode 60 made of silicon arranged in a mechanically movable state by providing a clearance with a nitride film 4 formed on the silicon substrate 41 and a wiring laminated part on which a first layer insulating film 52, a first wiring layer 63, a second layer insulating film 53, a second wiring layer 64 and a protective film 59 formed in the circumference of the movable electrode 60 and to cover a part of the fixed electrode 50 are laminated in this order. The movable electrode 60 is silicified by high melting point metal such as tungsten or molybdenum, etc. and a silicide part 65 is formed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过降低电阻同时保持结构体的机械特性及其制造方法来提供具有优异的工作特性的MEMS器件。解决方案：该MEMS器件具有形成在硅基板41上的由硅制成的固定电极50，通过与在硅衬底上形成的氮化物膜4间隔设置的机械移动状态的由硅制成的可移动电极60 41和布线层叠部分，其上形成有可动电极60的周围的第一层绝缘膜52，第一布线层63，第二层绝缘膜53，第二布线层64和保护膜59，并覆盖固定电极50的一部分依次层叠。可动电极60由诸如钨或钼等的高熔点金属硅化，形成硅化物部分65。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008114354A Electronic device and its manufacturing method 审中-公开
标题翻译：电子设备及其制造方法
公开(公告)号：JP2008114354A
公开(公告)日：2008-05-22
申请号：JP2006302478
申请日：2006-11-08
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： SATO AKIRA , WATANABE TORU , INABA SHOGO , MORI TAKASHI
IPC分类号： B81B7/02 , B81C1/00
CPC分类号： B81C1/00246 , B81B2207/015 , B81B2207/07 , B81C2203/0136 , B81C2203/0714 , B81C2203/0735 , H01L21/7682 , H01L24/05 , H01L2924/14 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic device for reducing manufacturing cost by manufacturing the miniaturized electronic device and functional structural body arranged in a cavity on a substrate in parallel with an electronic circuit by highly integrating the functional structural body and the electronic circuit. SOLUTION: This electronic device is provided with the substrate 1, the functional structural body 3X constituting a functional element formed on the substrate 1, and a covering structure for defining the cavity part S arranged with the functional structural body 3X. The covering structure includes a laminated structure of interlayer insulators 4 and 6 and wiring layers 5 and 7 formed on the substrate 1 to surround the surrounding of the cavity part S. An upper covering part 7Y for covering the cavity part S of the covering structure from the above is constituted of a part of the wire layers 5 and 7 arranged on an upper side of the functional structural body 3X. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决问题的方案：提供一种电子设备的制造方法，其通过将功能结构体和功能结构体进行高度集成，通过制造与电子电路平行地配置在基板上的空腔中的小型化电子设备和功能结构体来降低制造成本身体和电子电路。解决方案：该电子设备设置有基板1，构成在基板1上形成的功能元件的功能结构体3X，以及用于限定配置有功能结构体3X的空腔部分S的覆盖结构。覆盖结构包括层间绝缘体4和6的叠层结构以及形成在基板1上以围绕空腔部分S的周围的布线层5和7的上覆盖部分7Y，用于覆盖覆盖结构的空腔部分S的上覆盖部分7Y 上述由布置在功能结构体3X的上侧的线层5和7的一部分构成。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2012080557A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012080557A
公开(公告)日：2012-04-19
申请号：JP2011247240
申请日：2011-11-11
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： INABA SHOGO , SATO AKIRA , WATANABE TORU , MORI TAKASHI
IPC分类号： H03H9/24 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/06 , H03B5/30 , H03H3/007 , H03H9/02
摘要： PROBLEM TO BE SOLVED: To provide an MEMS resonator which simplifies the process to reduce the cost, and simplifies the system to enable noise countermeasures, and to provide a manufacturing method of the MEMS resonator.SOLUTION: A manufacturing method of an MEMS resonator is a method for manufacturing MEMS resonators 2, each of which has a semiconductor device and an MEMS structure part 4 which are formed on a substrate 10. The semiconductor device includes an ONO capacitor part 6 having an upper electrode 30 and a lower electrode 26 and a CMOS circuit part 8, and the lower electrode 26 of the ONO capacitor part 6 is formed by a first silicon layer 26. A lower structure 16 of the MEMS structure part 4 and the upper electrode 30 of the ONO capacitor part 6 are formed by a second silicon layer 52. Further, an upper structure 18 of the MEMS structure part 4 and a gate electrode 34 of the CMOS circuit part 8 is formed by a third silicon layer 54.
摘要翻译：要解决的问题：提供一种MEMS谐振器，其简化了降低成本的过程，并简化了系统以实现噪声对策，并提供了MEMS谐振器的制造方法。解决方案：MEMS谐振器的制造方法是制造MEMS谐振器2的方法，每个MEMS谐振器2都具有形成在基板10上的半导体器件和MEMS结构部分4.半导体器件包括ONO电容器部分 6具有上电极30，下电极26和CMOS电路部分8，并且ONO电容器部分6的下电极26由第一硅层26形成。MEMS结构部分4的下结构16和 ONO电容器部分6的上电极30由第二硅层52形成。此外，MEMS结构部分4的上部结构18和CMOS电路部分8的栅电极34由第三硅层54形成。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2010214588A Mems device 审中-公开
标题翻译： MEMS器件
公开(公告)号：JP2010214588A
公开(公告)日：2010-09-30
申请号：JP2010155541
申请日：2010-07-08
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： WATANABE TORU , SATO AKIRA , INABA SHOGO , MORI TAKASHI
IPC分类号： B81B3/00
摘要： PROBLEM TO BE SOLVED: To provide a microelectromechanical system (MEMS) device for reducing parasitic capacity between a MEMS structure and a semiconductor substrate.
SOLUTION: The MEMS device 1 has the MEMS structure 30 having a fixed electrode 20 and a movable electrode 26 formed on the semiconductor substrate 10 via an insulating layer. A well 13 is formed on the semiconductor substrate 10 under the fixed electrode 20, and the well 13 of impressing positive voltage on the fixed electrode 20 is a p type well. The voltage is impressed on the well 13 so that the well 13 becomes a depleted state. With this voltage, the depleted state is maintained.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于减小MEMS结构和半导体衬底之间的寄生电容的微机电系统（MEMS）装置。解决方案：MEMS器件1具有经由绝缘层形成在半导体衬底10上的固定电极20和可动电极26的MEMS结构30。在固定电极20下的半导体基板10上形成有阱13，在固定电极20上施加正电压的阱13为p型阱。电压施加在阱13上，使得阱13成为耗尽状态。利用该电压，维持耗尽状态。版权所有（C）2010，JPO＆INPIT

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