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11. 发明专利

JPWO2017077982A1 ダイボンディング装置およびダイボンディング方法有权
公开(公告)号：JPWO2017077982A1
公开(公告)日：2017-11-02
申请号：JP2017511792
申请日：2016-10-31
申请人：古河電気工業株式会社
发明人：照幸中村 , 照幸中村 , 章良関野 , 章良関野 , 谷口　英広 , 英広谷口
IPC分类号： H01L21/52
CPC分类号： H01L24/75 , H01L21/52 , H01L24/83 , H01L2224/751 , H01L2224/75272 , H01L2224/75281 , H01L2224/75283 , H01L2224/7565 , H01L2224/75744 , H01L2224/75745 , H01L2224/75804 , H01L2224/75824 , H01L2224/83048 , H01L2224/83065 , H01L2224/83075 , H01L2224/83192 , H01L2224/8321 , H01L2224/8322 , H01L2224/83411 , H01L2224/83444 , H01L2224/83815 , H01L2924/1011 , H01L2924/12042 , H01S5/02256 , H01S5/1039
摘要：第1部品に第2部品をボンディングするダイボンディング装置であって、第1部品が載置領域に載置される載置台と、載置台の下側に設けられたヒータと、載置台の載置領域を囲むように設けられた側壁と、第1および第2部品が通過可能な大きさの孔を有し、側壁に載置される蓋と、第2部品を先端部にて真空チャックすることにより保持可能なコレットと、コレットを、コレットが保持した第2部品が孔を通過して第1部品にボンディングされるように移動させる移動機構と、側壁に設けられ、側壁と蓋とで形成される加熱空間に加熱ガスを供給するガス供給管と、を備え、蓋は、ヒータおよび加熱ガスにより生じる赤外線輻射を反射もしくは吸収・再輻射することができる材料を含む。

12. 发明专利

JP2017152602A 半導体装置の製造方法、フリップチップ型半導体装置の製造方法、半導体装置及びフリップチップ型半導体装置审中-公开
公开(公告)号：JP2017152602A
公开(公告)日：2017-08-31
申请号：JP2016035304
申请日：2016-02-26
申请人：信越化学工業株式会社
发明人：曽我恭子 , 淺井聡
IPC分类号： G03F7/075 , G03F7/038 , G03F7/004 , G03F7/20 , H01L25/065 , H01L25/07 , H01L25/18 , C08G59/20 , H01L21/60
CPC分类号： H01L25/0657 , C08G59/621 , C08G59/623 , C08G77/18 , C08L63/00 , C08L83/14 , G03F7/0382 , G03F7/0757 , H01L21/563 , H01L21/78 , H01L23/296 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/50 , C08G77/52 , H01L2224/0345 , H01L2224/0346 , H01L2224/0401 , H01L2224/05147 , H01L2224/05647 , H01L2224/05655 , H01L2224/11002 , H01L2224/11334 , H01L2224/1146 , H01L2224/1147 , H01L2224/11901 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13147 , H01L2224/13155 , H01L2224/1329 , H01L2224/13291 , H01L2224/133 , H01L2224/13393 , H01L2224/16148 , H01L2224/271 , H01L2224/2741 , H01L2224/27416 , H01L2224/27422 , H01L2224/27436 , H01L2224/27618 , H01L2224/27848 , H01L2224/29011 , H01L2224/2919 , H01L2224/73104 , H01L2224/73204 , H01L2224/8114 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/81204 , H01L2224/81815 , H01L2224/81986 , H01L2224/83048 , H01L2224/83075 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83203 , H01L2224/83204 , H01L2224/83862 , H01L2224/83986 , H01L2224/9211 , H01L2224/92125 , H01L2224/92143 , H01L2224/94 , H01L2225/06513 , H01L2225/06565 , H01L2225/06568 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L2924/00015 , H01L2924/3511 , H01L2924/381 , H01L2924/3841
摘要：【課題】基板同士又は基板と素子の接着が良好であり、かつこれらの電気的接続も良好である半導体装置の製造方法を提供する。【解決手段】パッド、又はパッドに更にプラグが設けられた第1基板とプラグが設けられた第2基板又は素子を準備する工程、第1基板のパッド又はプラグ及び第2基板又は素子のプラグの少なくとも一方にソルダーボールを形成する工程、第1基板のパッド形成面及び第2基板又は素子のプラグ形成面の少なくとも一方を感光性絶縁層で覆う工程、感光性絶縁層で覆われた方の基板又は素子におけるパッド又はプラグ上に、リソグラフィーで開口を形成する工程、開口を通じて第2基板又は素子のプラグを第1基板のパッド又はプラグにソルダーボールを介して圧接接合する工程、第1基板のパッド又はプラグと第2基板又は素子のプラグとをベークにより電気的に接続する工程、感光性絶縁層をベークにて硬化する工程を有する半導体装置の製造方法。【選択図】図1

13. 发明专利

JPWO2013161891A1 チップオンウエハ接合方法及び接合装置並びにチップとウエハとを含む構造体有权
标题翻译：结构包括芯片上晶片接合方法和接合装置，并且所述芯片和晶片
公开(公告)号：JPWO2013161891A1
公开(公告)日：2015-12-24
申请号：JP2014512656
申请日：2013-04-24
申请人：須賀唯知 , 唯知須賀 , ボンドテック株式会社
发明人：須賀　唯知 , 唯知須賀 , 山内　朗 , 朗山内
IPC分类号： H01L21/60 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L25/0652 , B23K31/02 , B23K37/00 , B23K37/0408 , B23K2201/40 , H01L21/6836 , H01L22/10 , H01L23/10 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/09 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/74 , H01L24/742 , H01L24/743 , H01L24/75 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/94 , H01L24/95 , H01L25/105 , H01L25/50 , H01L2221/68327 , H01L2224/0384 , H01L2224/03845 , H01L2224/0401 , H01L2224/05009 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06134 , H01L2224/0615 , H01L2224/06177 , H01L2224/08145 , H01L2224/08225 , H01L2224/09181 , H01L2224/1184 , H01L2224/11845 , H01L2224/13009 , H01L2224/13016 , H01L2224/13017 , H01L2224/13021 , H01L2224/13022 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/14134 , H01L2224/1415 , H01L2224/14177 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/17181 , H01L2224/27009 , H01L2224/2755 , H01L2224/27823 , H01L2224/2784 , H01L2224/27845 , H01L2224/29111 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/73103 , H01L2224/74 , H01L2224/7501 , H01L2224/75101 , H01L2224/75102 , H01L2224/7525 , H01L2224/75251 , H01L2224/75252 , H01L2224/75283 , H01L2224/753 , H01L2224/75301 , H01L2224/7531 , H01L2224/75501 , H01L2224/75502 , H01L2224/7565 , H01L2224/75701 , H01L2224/75702 , H01L2224/75753 , H01L2224/75802 , H01L2224/75804 , H01L2224/75824 , H01L2224/75842 , H01L2224/7598 , H01L2224/80003 , H01L2224/8001 , H01L2224/80013 , H01L2224/80065 , H01L2224/8013 , H01L2224/80132 , H01L2224/80143 , H01L2224/80201 , H01L2224/80203 , H01L2224/8022 , H01L2224/8023 , H01L2224/80447 , H01L2224/8083 , H01L2224/80907 , H01L2224/81002 , H01L2224/8101 , H01L2224/81013 , H01L2224/81065 , H01L2224/8113 , H01L2224/81132 , H01L2224/81143 , H01L2224/81193 , H01L2224/81201 , H01L2224/81203 , H01L2224/8122 , H01L2224/8123 , H01L2224/81447 , H01L2224/81801 , H01L2224/81805 , H01L2224/8183 , H01L2224/81907 , H01L2224/83002 , H01L2224/8301 , H01L2224/83013 , H01L2224/83048 , H01L2224/83051 , H01L2224/83065 , H01L2224/83091 , H01L2224/8313 , H01L2224/83132 , H01L2224/83136 , H01L2224/83143 , H01L2224/83193 , H01L2224/83201 , H01L2224/83203 , H01L2224/8322 , H01L2224/8323 , H01L2224/83234 , H01L2224/83355 , H01L2224/83447 , H01L2224/83801 , H01L2224/8383 , H01L2224/83894 , H01L2224/83907 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2924/01322 , H01L2924/10157 , H01L2924/10253 , H01L2924/3511 , H01L2224/81 , H01L2924/00012 , H01L2924/00014 , H01L2924/01047 , H01L2224/80 , H01L2224/83 , H01L2924/00
摘要：【課題】接合界面に樹脂などの望ましくない残存物を残さないようにして、チップとウエハとの間又は積層された複数のチップ間の電気的接続を確立し機械的強度を上げる、ウエハ上にチップを効率よく接合する技術を提供すること。【解決手段】金属領域を有するチップ側接合面を有する複数のチップを、複数の接合部を有する基板に接合する方法が、チップ側接合面の金属領域を、表面活性化処理し、かつ親水化処理するステップ(S1)と、基板の接合部を表面活性化処理し、かつ親水化処理するステップ(S2)と、表面活性化処理されかつ親水化処理された複数のチップを、それぞれ、チップの金属領域が基板の接合部に接触するように、表面活性化処理されかつ親水化処理された基板の対応する接合部上に取り付けるステップ(S3)と、基板と基板上に取り付けられた複数のチップとを含む構造体を加熱するステップ(S4)とを備える。【選択図】図1
摘要翻译：甲以免留下不希望的残余物，如键合界面的树脂，增加之间或多个芯片和晶片的堆叠芯片的之间所建立的机械强度的电连接，在晶片上以用于有效地接合所述芯片的技术。多个具有具有的金属区域，粘接到具有多个关节的底物的方法，所述芯片侧粘结表面的金属区域，处理过的表面活化，和亲水性的芯片侧粘结表面的芯片步骤（S1），以进行处理，该基板处理过的表面活化的接合处，并且步骤（S2）亲水性处理，将多个芯片被处理表面活化和分别亲水化，芯片如在与基板的接合部接触的金属区域，所述步骤（S3），用于安装在表面处理的激活，并且已被亲水化的基板，安装在基板上的多个芯片的相应接头和基板上和用于加热含有结构和步骤（S4）。点域1

14. 发明专利

JP2014517546A Semiconductor device provided with a sintered bonding layer which is a manufacturing method and structure of the structured sintered bond layer 有权
公开(公告)号：JP2014517546A
公开(公告)日：2014-07-17
申请号：JP2014516395
申请日：2012-06-26
申请人：ローベルトボツシユゲゼルシヤフトミツトベシユレンクテルハフツングRobert Bosch Gmbh
发明人：ギュエノミヒャエル , ギュンターミヒャエル , ヘアボートトーマス
IPC分类号： H01L21/60 , H01L23/36
CPC分类号： H01L24/64 , H01L23/3735 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/70 , H01L24/83 , H01L2224/2732 , H01L2224/27418 , H01L2224/27848 , H01L2224/29 , H01L2224/29007 , H01L2224/29012 , H01L2224/29015 , H01L2224/29023 , H01L2224/29036 , H01L2224/29139 , H01L2224/29298 , H01L2224/3003 , H01L2224/30051 , H01L2224/3012 , H01L2224/30142 , H01L2224/3016 , H01L2224/30181 , H01L2224/32014 , H01L2224/73103 , H01L2224/73203 , H01L2224/83048 , H01L2224/83203 , H01L2224/8384 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01029 , H01L2924/01047 , H01L2924/07811 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/1517 , H01L2924/15747 , H01L2924/15787 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/00 , H01L2924/00012
摘要：本発明が基礎とする着想は、基板（１１）とチップ（１３）との間に良好な電気的及び熱的な結合を確立し、更にはチップ（１３）内の機械的な応力も低減する焼結結合部を基板（１１）とチップ（１３）との間に形成することである。本発明は焼結層（１２）の製造方法に関し、この方法は、焼結層（１２）を形成する出発材料から成る複数の焼結要素（２２ａ，２２ｂ，２２ｃ）を構造化して、基板（１１）の主表面（１１ａ）のコンタクト面（２１）上に被着させるステップと、基板（１１）と接続すべきチップ（１３）を焼結要素（２２ａ，２２ｂ，２２ｃ）の上に配置するステップと、基板（１１）とチップ（１３）を接続し、且つコンタクト面（２１）の内側に延在する、構造化された焼結層（１２）を形成するために焼結要素（２２ａ，２２ｂ，２２ｃ）を加熱及び圧縮するステップとを備えており、コンタクト面（２１）の中心領域（２１ａ）における、基板（１１）上の焼結要素（２２ａ，２２ｂ，２２ｃ）の面占有率は、コンタクト面（２１）の縁部領域（２１ｃ）における焼結要素（２２ａ，２２ｂ，２２ｃ）の面占有率よりも大きく、また、各焼結要素（２２ａ，２２ｂ，２２ｃ）からは、基板（１１）の主表面（１１ａ）に対して水平方向に延在している少なくとも一つの通路（２３）がコンタクト面（２１）の縁部まで形成されている。コンタクト面（２１）の中心領域（２１ａ）には一つの大面積の焼結要素（２２ａ）を配置することができ、またコンタクト面（２１）の縁部領域（２１ｃ）には、例えば円形の形状の多数の焼結要素（２２ｃ）を配置することができる。焼結要素（２２ａ，２２ｂ，２２ｃ）はノッチ（２４）も有することができる。本発明は更に相応の装置（１０，１０'，１０''）に関する。

15. 发明专利

JP2013232472A Method of manufacturing semiconductor device, thermal insulation load jig, and method of installing thermal insulation load jig 有权
标题翻译：制造半导体器件的方法，热绝缘负载和安装热绝缘负载的方法
公开(公告)号：JP2013232472A
公开(公告)日：2013-11-14
申请号：JP2012102954
申请日：2012-04-27
申请人： Nissan Motor Co Ltd , 日産自動車株式会社 , Fuji Electric Co Ltd , 富士電機株式会社 , Sanken Electric Co Ltd , サンケン電気株式会社 , Comb Giken Co Ltd , 株式会社コーム技研
发明人： TANIMOTO SATOSHI , ZUSHI YUSUKE , MURAKAMI YOSHINORI , MATSUI KOHEI , SATO SHINJI , FUKUSHIMA YU
IPC分类号： H01L21/52
CPC分类号： H01L24/83 , B23K37/0426 , H01L24/05 , H01L24/29 , H01L24/75 , H01L24/97 , H01L2224/04026 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/2732 , H01L2224/291 , H01L2224/29118 , H01L2224/29144 , H01L2224/75101 , H01L2224/75305 , H01L2224/7531 , H01L2224/75314 , H01L2224/75315 , H01L2224/75317 , H01L2224/7532 , H01L2224/75756 , H01L2224/7598 , H01L2224/75981 , H01L2224/83022 , H01L2224/83048 , H01L2224/83075 , H01L2224/83101 , H01L2224/832 , H01L2224/83211 , H01L2224/83444 , H01L2224/83447 , H01L2224/83801 , H01L2224/83815 , H01L2224/97 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1037 , H01L2924/1067 , H01L2924/12032 , H01L2924/12036 , H01L2924/13062 , H01L2924/13091 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/3656 , H05K3/34 , H05K3/3431 , H05K13/0465 , H05K2203/0195 , H05K2203/0278 , H01L2924/00 , H01L2924/0542 , H01L2924/0103 , H01L2924/00014 , H01L2924/01042 , H01L2924/01032 , H01L2924/01014 , H01L2924/01013 , H01L2224/05655 , H01L2224/83 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To reduce generation of voids, and to avoid generation of failures caused by thermal damage at a solder bonding step.SOLUTION: A thermal insulation load jig 11 comprises: a thermal insulator 17 installed on a semiconductor chip 13 that is in a state that a solder material 14 is sandwiched after the solder material 14 having a melting point or a solidus line temperature within a range from a heat-resistant temperature of the semiconductor chip 13 to 100°C or less is sandwiched between a circuit board 12 and the semiconductor chip 13; and a metal weight 16 arranged on the thermal insulator 17 and that applies a load to the semiconductor chip 13 while the solder material 14 is melted and solidified.
摘要翻译：要解决的问题：减少空隙的产生，并避免产生由焊接接合步骤引起的热损伤引起的故障。解决方案：绝热负载夹具11包括：安装在半导体芯片13上的绝热体17，其位于在熔融点或固相线温度在从半导体芯片13的耐热温度到100℃以下的范围内的焊料14之间夹持焊料14的状态夹在电路板12 和半导体芯片13; 以及布置在绝热体17上并在焊料14融化固化的同时对半导体芯片13施加载荷的金属重物16。

16. 发明专利

JP2013194103A Adhesive composition, adhesive sheet and method for manufacturing semiconductor device 有权
标题翻译：粘合剂组合物，粘合片和制造半导体器件的方法
公开(公告)号：JP2013194103A
公开(公告)日：2013-09-30
申请号：JP2012061102
申请日：2012-03-16
申请人： Lintec Corp , リンテック株式会社
发明人： TSUCHIYAMA SAYAKA , ICHIKAWA ISAO
IPC分类号： C09J133/04 , C09J7/00 , C09J7/02 , C09J11/04 , C09J201/02 , H01L21/301
CPC分类号： C09J133/00 , B32B17/10697 , B32B17/10733 , B32B17/10743 , C09J133/066 , C09J133/08 , C09J133/10 , C09J163/00 , H01L21/6836 , H01L21/78 , H01L23/293 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2221/68381 , H01L2224/27003 , H01L2224/27436 , H01L2224/2929 , H01L2224/29387 , H01L2224/2949 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/83 , H01L2224/83048 , H01L2224/83191 , H01L2224/83203 , H01L2224/8385 , H01L2224/83862 , H01L2224/83907 , H01L2224/92 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/12042 , H01L2924/181 , Y10T428/2826 , H01L2224/27 , H01L2924/0635 , H01L2924/05442 , H01L2924/00012 , H01L2224/45099 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an adhesive composition in which a filler is evenly mixed with an adhesive agent, and in which wire bonding is stably performed before hardening in a batch, with excellent adhesive strength after hardening, even when a hardening process in a batch is adopted in manufacturing a multi-stage package, attaining high package reliability in a semiconductor device.SOLUTION: An adhesive composition includes an acrylic polymer (A), a heat curable resin (B) having unsaturated hydrocarbon group, and a filler (C) having a reactive double bond on a surface.
摘要翻译：要解决的问题：为了提供一种粘合剂组合物，其中填料与粘合剂均匀混合，并且其中在一次硬化之前稳定地进行引线接合，具有优异的硬化后的粘合强度，即使在采用批量制造多级封装，在半导体器件中获得高封装可靠性。解决方案：粘合剂组合物包括丙烯酸类聚合物（A），具有不饱和烃基的热固化树脂（B）和填料（C ）在表面上具有反应性双键。

17. 发明专利

JP3833531B2 Die bonding method and die bonding equipment 有权
公开(公告)号：JP3833531B2
公开(公告)日：2006-10-11
申请号：JP2001387584
申请日：2001-12-20
申请人： Juki株式会社
发明人：光正岡林 , 勝斉藤
IPC分类号： H01L21/52
CPC分类号： H01L24/75 , H01L2224/83048 , H01L2924/01322 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To efficiently connect a semiconductor element to a sub-mount without leaving thermal strains in the element such as a semiconductor laser chip or the like. SOLUTION: A method for die bonding the semiconductor element comprises the steps of mounting the sub-mount 23 on a pedestal 12. The method further comprises the step of blowing an inert gas from a gas jet nozzle 14 to the sub-mount 23. Further, the method comprises the steps of irradiating the rear surface of the sub-mount 23 with a laser beam 15, and hence preliminarily heating the sub-mount 23. The method also comprises the steps of lowering a capillary 13, and hence mounting a semiconductor laser chip 18 on the sub- mount 23. The method also comprises the steps of then raising the irradiation intensity of the beam 15, and heating the sub-mount 23. Thus, an insert material interposed between the sub-mount 23 and the chip 18 is melted, and the chip 18 is die bonded to the sub-mount 23. COPYRIGHT: (C)2003,JPO

18. 发明专利

JP2004193533A Die bonding device 有权
公开(公告)号：JP2004193533A
公开(公告)日：2004-07-08
申请号：JP2003000746
申请日：2003-01-07
申请人： Juki Corp , ジューキ株式会社
发明人： SAITO MASARU , ANZAI HIROSHI , HACHIMAN NAOYUKI
IPC分类号： H01L21/52
CPC分类号： H01L2224/83048
摘要： PROBLEM TO BE SOLVED: To bond a semiconductor laser chip to a submount further effectively without leaving thermal strain in the semiconductor laser chip.
SOLUTION: A submount 23 is mounted on a heating plate 24. Inert gas is sprayed to the submount 23 from a gas spray nozzle 14. The submount 23 is preliminarily heated by irradiating the lower surface of the heating plate 24 with laser beam 15. A semiconductor laser chip 18 is mounted on the submount 23 by lowering a chip nozzle 13. Thereafter, irradiation strength of the laser beam 15 is raised and the heating plate is heated. Thereby, brazing material interposed between the submount 23 and the semiconductor laser chip 18 is dissolved and the semiconductor laser chip 18 is subjected to die-bonding to the submount 23.
COPYRIGHT: (C)2004,JPO&NCIPI

19. 发明专利

JPS6156421A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6156421A
公开(公告)日：1986-03-22
申请号：JP17870584
申请日：1984-08-28
申请人： Nec Corp
发明人： KATSUKAWA KIMIAKI
IPC分类号： H01L21/52 , H01L21/58
CPC分类号： H01L24/83 , H01L24/29 , H01L2224/04026 , H01L2224/32225 , H01L2224/83048 , H01L2224/83101 , H01L2224/83191 , H01L2224/83801 , H01L2224/83805 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/13063 , H01L2924/15787 , H01L2924/01014 , H01L2924/00
摘要： PURPOSE:To prevent chip exfoliation by reducing the thermal resistance by improving the adhesive to packages and the like by a method wherein the back of a compound semiconductor chip is coated with a metallic layer having Au and Si. CONSTITUTION:The back of a wafer finished in the formation of surface elements of a GaAs MESFET is polished, and Ti2, Pt3, and Au4 are successively adhered. Further, Au and Si are adhered in 21 layers alternately, and the ratio of film thickness is chosen so that the weight ratio of Au which forms a multilayer film 7 may becomes a ratio of 5.8-6.4wt%. This wafer is diced into a FET chip 1, which is placed on a pre-heated ceramic package 6 and adhered thereto. It is equivalent to the uniform deposition of solder to the chip back, and the problem of wetting of the chip with the solder is eliminated.
摘要翻译：目的：通过将复合半导体芯片的背面涂覆有具有Au和Si的金属层的方法，通过改善对封装等的粘合剂来降低热阻来防止芯片剥离。构成：抛光在GaAs MESFET的表面元件的形成中完成的晶片的背面，并且Ti2，Pt3和Au4被依次粘附。此外，Au和Si交替地粘附在21层中，并且选择膜厚比，使得形成多层膜7的Au的重量比可以变成5.8-6.4重量％的比例。将该晶片切割成FET芯片1，FET芯片1放置在预热陶瓷封装6上并粘附在其上。这相当于将焊料均匀地沉积到芯片背面，并且消除了与焊料的芯片的润湿问题。

20. 发明专利

JPS5940538A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5940538A
公开(公告)日：1984-03-06
申请号：JP15160582
申请日：1982-08-30
申请人： Nec Home Electronics Ltd
发明人： TARUI MASASHI , NANBU TETSUJI , MORIMOTO TOSHIHIRO , ODA KAZUTAKA
IPC分类号： H01L21/52 , H01L21/58
CPC分类号： H01L24/83 , H01L24/75 , H01L2224/29339 , H01L2224/32245 , H01L2224/83048 , H01L2224/8319 , H01L2224/8385 , H01L2924/01047 , H01L2924/01082 , H01L2924/07802
摘要： PURPOSE:To adhere pellets firmly to respective islands by a method wherein the pellets are equipped to a lead frame by a conductive adhesive, and after the pellets are preliminarily heated holding the prescribed interval between a heater, the pellets are adhered closely to the heater to be heated. CONSTITUTION:The pellets 4 are equipped on the islands of the lead frame 3 using Ag paste, and the frame 3 is preliminarily heated at about 260 deg.C in a furnace 6 holding the prescribed interval 8 over the heater 7 heated at nearly 380 deg.C. After the prescribed hours, the frame 3 is adhered closely to the heater 7, and main heating is performed for the prescribed hours. By this two stage heating, because the hardener and the resin component of paste react completely to be hardened, adhesion is strong, and moreover because an air bubble is hard to remain in paste, and exfoliation of the pellet is hard to generate.
摘要翻译：目的：通过一种方法将颗粒牢固地粘附到各个岛上，其中通过导电粘合剂将颗粒装配到引线框架中，并且在颗粒被预热保持加热器之间的规定间隔之后，将颗粒紧密地粘附到加热器加热。构成：使用Ag膏将颗粒4装配在引线框架3的岛上，并且将框架3在保持规定间隔8的炉6中预先在约260℃加热到加热器7上加热近380度。C。在规定的时间之后，框架3紧密地粘附在加热器7上，主要的加热进行规定的时间。通过这两阶段的加热，由于糊剂的固化剂和树脂成分完全反应而硬化，粘附性强，而且由于气泡难以保持在糊状物中，因此难以产生颗粒的剥离。

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