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    • 12. 发明专利
    • Method of producing superconducting oxide material
    • 生产超导氧化物材料的方法
    • JP2009252641A
    • 2009-10-29
    • JP2008101536
    • 2008-04-09
    • Japan Steel Works Ltd:TheNational Institute Of Advanced Industrial & Technology株式会社日本製鋼所独立行政法人産業技術総合研究所
    • NAKAMURA TETSUSHIGESATO RYOSUKEKOYANAGI KUNIHIKOEBISAWA TAKASHIOTSU HIDEHIKOSOMA MITSUGITSUCHIYA TETSUOKUMAGAI TOSHIYATSUKADA KENICHI
    • H01B13/00C01G1/00C01G3/00H01L39/24
    • PROBLEM TO BE SOLVED: To provide a method of producing a superconducting oxide material that achieves the same effect as that obtained by back irradiation even when forming a thinner film by overglazing without limiting laser irradiation conditions and even when forming films on both sides of a substrate.
      SOLUTION: The method of producing an epitaxially grown superconducting coating material includes: a process (1) of applying a solution of metallic organic compound having an oxide for forming a superconducting material onto the substrate and drying it; a provisional firing process (2) of pyrolizing an organic matter in the metallic organic compound; and a full-scale firing process (3) of performing conversion into a superconducting material, wherein, when a laser is irradiated between the processes (1) and (2), a scattering mechanism is disposed immediately before a surface coated with the solution of metallic organic compound where the superconducting material is formed, and a laser, after being once scattered, is irradiated to the organic compound solution.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种制造超导氧化物材料的方法,即使在不限制激光照射条件的情况下甚至当在两侧形成膜时,通过过度玻璃形成较薄的膜也能获得与通过反向照射获得的效果相同的效果 的基底。 解决方案:制备外延生长的超导涂层材料的方法包括:将具有用于形成超导材料的氧化物的金属有机化合物溶液施加到基底上并干燥的方法(1) 对金属有机化合物中的有机物进行热处理的暂时烧制工序(2) 以及进行超导材料的转换的全尺寸焙烧工序(3),其中,当在工序(1)和(2)之间照射激光时,散射机构紧接在被涂覆有 其中形成超导材料的金属有机化合物和被一次散射的激光照射到有机化合物溶液上。 版权所有(C)2010,JPO&INPIT
    • 16. 发明专利
    • Method for producing superconductor
    • 生产超导体的方法
    • JP2003327496A
    • 2003-11-19
    • JP2002136185
    • 2002-05-10
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • MANABE TAKAAKIYAMAGUCHI IWAOSOMA MITSUGIKUMAGAI TOSHIYAWATANABE TOMOHIRO
    • C01G1/00C01G3/00C30B1/04C30B1/10C30B29/22H01B12/06H01B13/00
    • Y02E40/642
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing a superconductor in which an epitaxially oriented rare earth 123 type superconducting film can be heat treated at a lower temperature.
      SOLUTION: In the method for manufacturing the superconductor in which the rare earth 123 structure type oxide superconducting film having a composition of YbBa
      2 Cu
      3 O
      7-y is provided on a substrate, the epitaxially oriented YbBa
      2 Cu
      3 O
      7-y film is formed by successively carrying out: a first step for preparing a precursor film consisting of a mixture of barium carbonate or barium fluoride, ytterbium oxide and copper oxide on the substrate and then successively performing heat treatments for forming YbBa
      2 Cu
      4 O
      8 by heat treating the precursor film in a temperature range of 675 to 800°C in a high oxygen partial pressure atmosphere having an oxygen partial pressure of 0.25 to 1 atm; a second step for forming tetragonal YbBa
      2 Cu
      3 O
      6 by heat treating the resultant YbBa
      2 Cu
      4 O
      8 in a temperature range of 675 to 850°C under a low oxygen partial pressure of 1×10
      -5 to 1×10
      -3 atm; and a third step for forming monoclinic YbBa
      2 Cu
      3 O
      7-y by heat treating the tetragonal YbBa
      2 Cu
      3 O
      6 in the temperature range of 200 to 500°C under a high oxygen partial pressure of 0.2 to 1 atm.
      COPYRIGHT: (C)2004,JPO
    • 解决的问题:提供一种可以在较低温度下对外延取向的稀土类123型超导膜进行热处理的超导体的制造方法。 < P>解决方案:在具有YbBa< SB> 2< SB> 3< SB> O< SB> 7的稀土类123结构型氧化物超导膜的超导体的制造方法中, -y 设置在基板上,外延取向的YbBa 2 SB 3薄膜通过依次携带 在基板上制备由碳酸钡或氟化钡,氧化镱和氧化铜的混合物构成的前体膜,然后依次进行热处理以形成YbBa 2 通过在氧分压为0.25〜1atm的高氧分压气氛中,在675〜800℃的温度范围内热处理前体膜; 通过热处理所得到的YbBa SB SB2 SB SBB,形成四方晶系YbBa 2 3 O 6 的第二步 > 4 O 8 在675至850℃的温度范围内,在低氧分压为1×10 -5 至1×10 -3 atm; 以及通过热处理四方晶YbBa SB2 2 / SBB,通过热处理形成单斜晶系YbBa 2 3 7-y 的第三步骤。 在200〜500℃的温度范围内,在0.2〜1大气压的高氧分压下,进行Cu 3 6 。 版权所有(C)2004,JPO