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11. 发明专利

JPS5892239A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5892239A
公开(公告)日：1983-06-01
申请号：JP19117281
申请日：1981-11-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUKAWA TAKAYUKI , YAMANO TAKESHI , KOTANI HIDEO
IPC分类号： H01L21/768 , H01L21/88
摘要： PURPOSE:To allow the realization of a multi-layer structure wherein flatness and good electric insulation are maintained by a method wherein the formation of a layer insulation layer and the flat formation of the structure itself thereunder at two stages, and thereafter an insulation layer is further superposed. CONSTITUTION:When the glass layer 4 is satisfactorily heated and thus allowed to have fluidity, the upper end part of the layer 3 flows, and accordingly a structure wherein it goes out of the flat formed glass layer can be formed. Next, the extruded part of the layer 3 is removed by etching this surface by a method wherein the glass layer 4 is hardly etched, but only the layer 3 material is selectively etched. Thereafter, a low melting point glass layer 6 is further deposited thereon, and, when it is heated again and allowed to flow, the upper surface becomes smooth. Thereafter, while keeping the sufficient insulation distance between the layer 3 by forming the next layer 5, the upper layer 5 can be formed extremely flat.

12. 发明专利

JPS5825225A HOT WALL TYPE DECOMPRESSION UNIT 失效
公开(公告)号：JPS5825225A
公开(公告)日：1983-02-15
申请号：JP12489681
申请日：1981-08-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOTANI HIDEO , YAKUSHIJI HISAO
IPC分类号： C23C16/54 , H01L21/205 , H01L21/31
摘要： PURPOSE:To obtain a necessary vacuum in a short period of time and thereby to improve processing efficiency by a method wherein the both ends of a tube constituting a decompression CVD unit, plasma CVD unit, epitaxial unit or the like are respectively provided with auxiliary chambers. CONSTITUTION:The both ends of a reaction tube 1 surrounded with heaters 2 are provided with a first flange 3 and a second flange 6. An end of a first auxiliary chamber 8 provided with a third flange 10 on the other end is coupled to the flange 3 and an end of a second auxiliary chamber 9 provided with a fourth flange 11 on the other end is coupled to the flange 6. Every one of the flanges 3, 6, 10, and 11 are provided with a shutter and the two chambers 8 and 9 are respectively provided with rods 13 and 14 to handle wafer-loaded boats back and forth. A first boat 4 and a second boat 12 with a multiplicity of vertically arranged wafers are pushed into the chamber 1 from the chamber 9. The system is then evacuated for a growing process, whereafter the chamber 8 is caused to leak, wherethrough the boat 4 is drawn out.

13. 发明专利

JPS57134553A CHEMICAL VAPOR PHASE GROWING METHOD 失效
公开(公告)号：JPS57134553A
公开(公告)日：1982-08-19
申请号：JP2035681
申请日：1981-02-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： DENDA MASAHIKO , OOHAYASHI YOSHIKAZU , SATOU SHINICHI , KOTANI HIDEO , MIZUGUCHI KAZUO
IPC分类号： C23C16/50 , C23C16/44 , C23C16/509 , H01L21/205 , H01L21/31
摘要： PURPOSE:To prevent the thickness of a formed film of a reaction product from being made ununiform in the manufacture of a semiconductor device by a chemical vapor phase growing method, by simultaneously introducing an etching gas into a part of an apparatus. CONSTITUTION:An upper electrode 3 and a lower electrode 4 are arranged in a reaction chamber 2 formed with a case 1 made of quartz, and the interior of the chamber 2 is kept at prescribed reduded pressure and temp. A high frequency voltage is applied to the electrodes 3, 4 from a power source 5, and gaseous SiH4 or SiCl2H2 and gseous NH3 or N2 are fed from an inlet 6 and converted into plasma by discharge to form an SiN film on a substrate 11 on the electrode 4. At this time, gaseous CF4 mixed optionally with gaseous O2 is simultaneously introduced from an inlet 8 as an etching gas, passed by the underside of the electrode 3, and exhausted from an outlet 9. The deposition of a reaction product on the underside of the electrode 3 is prevented by the etching gas. Accordingly the product does not make the thickness of the SiN film on the substrate 11 ununiform by dropping.

14. 发明专利

JPS5756036A Plasma chemical vapor phase reactor 失效
标题翻译：等离子体化学气相反应器
公开(公告)号：JPS5756036A
公开(公告)日：1982-04-03
申请号：JP13123480
申请日：1980-09-20
申请人： Mitsubishi Electric Corp
发明人： HARADA HIROJI , SATOU SHINICHI , FUKUMOTO HAYAAKI , TAKANO HIROZOU , KOTANI HIDEO , KAYANO SHINPEI
IPC分类号： B01J19/08 , C23C16/50 , H01J37/32 , H01L21/18 , H01L21/205
CPC分类号： H01J37/32623 , C23C16/50
摘要： PURPOSE:To improve the growth rate of films by providing magnets generating magnetic field parallel with the surface of the electrodes of a plasma chemical vapor phase reactor in the neighborhood of the surface of one of the electrodes of said device. CONSTITUTION:In a plasma chemical reactor producing semiconductor films such as silicon nitride films or the like, magnets 12, 12' are provided near the surface of one substrate 7, so that the magnetic lines 13 of force created by these are made parallel with the surface near the surface of a silicon wafer. Then, the electrons generated by plasma discharge are confined around said magnetic lines of force and therefore the density of plasma is icreased considerably near the magnetic lines of force, that is, on the surface of the silicon wafer, and the growth rate of the films is increased.
摘要翻译：目的：通过在所述装置的一个电极的表面附近提供与等离子体化学气相反应器的电极的表面平行的磁场，从而提高磁体的生长速度。构成：在制造诸如氮化硅膜等的半导体膜的等离子体化学反应器中，在一个基板7的表面附近设置磁体12,12'，使得由它们产生的力的磁线13与表面附近的硅晶片表面。然后，通过等离子体放电产生的电子被限制在所述磁力线周围，因此等离子体的密度显着地靠近磁力线，即在硅晶片的表面上，并且膜的生长速率增加了。

15. 发明专利

JPS56134748A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56134748A
公开(公告)日：1981-10-21
申请号：JP3940180
申请日：1980-03-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOTANI HIDEO , YAKUSHIJI HISAO , DENDA MASAHIKO , SATOU SHINICHI , UOTANI SHIGEO
IPC分类号： H01L23/29 , H01L23/31 , H01L23/556
摘要： PURPOSE:To obtain the device unchangeable in characteristic against alpha-rays by a method wherein an opening is formed in an insulating film on a conductive layer connected to a diffused layer and covered with Ta or W, and an oxide of Ta or W is formed on the parts other than the opening part. CONSTITUTION:An N layer 2 is formed on a P type Si substrate 1 and an Al wiring 4 is formed on an SiO2 film 3 to be connected with the N layer 2 and covered with an SiO2 film 5. The film 5 is formed an opening 6 and covered with Ta or W, the opening 6 is masked with a resist 8 and oxidized by an anodic oxdizing method to form an oxide film 9, the resist is removed to form an electrode 7. With this construction, the film 9 makes a protecting action against the alpha-rays radiation and therefore, the device makes no mulfunction.

16. 发明专利

JPH0370904B2 失效
公开(公告)号：JPH0370904B2
公开(公告)日：1991-11-11
申请号：JP1859385
申请日：1985-02-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： HATANAKA MASAHIRO , OGAWA TOSHIAKI , KOBAYASHI KYOTERU , SATO SHINICHI , KOTANI HIDEO , YONEDA MASAHIRO
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108

17. 发明专利

JPS63209145A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63209145A
公开(公告)日：1988-08-30
申请号：JP4185187
申请日：1987-02-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUTSUMI TOSHIAKI , KOTANI HIDEO , OKAMOTO TATSURO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PURPOSE:To shorten a delaying time by reducing a wiring area of only the intersection of upper and lower layer interconnections for forming a capacitor in multilayer interconnection. CONSTITUTION:Interlayer insulating films 2a, 2b are formed on lower layer interconnection 3, and upper interconnection 9 is formed thereon. An intersection 8 of the interconnections 3, 9 is formed. The intersection 9 is patterned by using a mask in which at least one interconnection pattern face line of upper and lower layer interconnection patterns 7 is reduced smaller than a peripheral pattern 7 to reduce the capacity of the intersection 8. Thus, the electrode area of a capacitor formed of the interconnections 3, 9 is reduced to decrease the capacity, and the area of the intersection 8 of the interconnections 3, 9 can be reduced to shorten a delaying time.

18. 发明专利

JPS63196062A FORMATION OF MULTILAYER INTERCONNECTION 失效
公开(公告)号：JPS63196062A
公开(公告)日：1988-08-15
申请号：JP2860687
申请日：1987-02-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOTANI HIDEO
IPC分类号： H01L21/3205 , H01L21/768
摘要： PURPOSE:To prevent the short between multilayer interconnections and the disconnection of wirings by a method wherein the surface of a first layer wiring is coated with a conductor film, a buried conductor is buried in a hole formed in an insulating film and a second layer wiring is brought into contact to this buried conductor. CONSTITUTION:A conductor film 7 is formed on the surface of a first layer wiring 3, an insulating film 8 is formed in such a way as to cover the formed conductor film 7, then a hole provided with the conductor film 7 as its bottom is formed in the formed insulating film and after that, a buried conductor 10 is buried in this formed hole and a second layer wiring 11 is formed in such a way as to come into contact to this buried conductor 10. Thereby, the short between the multilayer interconnections due to a hillock and the disconnection of the wirings due to a step coverage failure can be prevented.

19. 发明专利

JPS63172463A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63172463A
公开(公告)日：1988-07-16
申请号：JP361587
申请日：1987-01-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： OKAMOTO TATSURO , KOTANI HIDEO
IPC分类号： H01L29/41 , H01L21/28 , H01L29/43
摘要： PURPOSE:To obtain a contact electrode structure characterized by excellent deposition rate of a conductor film at an upper layer and high reliability, by forming a first conductor film in a contact hole, forming a second conductor film thereon, filling the contact hole, and thereafter forming a third conductor film. CONSTITUTION:An insulating film 3 is formed on an impurity diffused layer 2. A contact hole 10 is provided at a specified place. A first conductor film 4 is formed at the bottom surface part of the contact hole 10. A second conductor film 5 is formed thereon, and the contact hole 10 is filled. A third conductor film 6 comprising aluminum alloy is formed on the insulating film 3 and contacted with the second conductor film 5 at a part of the contact hole 10. The conductor films are formed with any of, e.g., Mo, W, Ti, Ta, Cr, Nb, V and Co or silicide, nitride boride or carbide of any of Mo, W, Ti, Ta, Cr, Nb, V, and Co.

20. 发明专利

JPS6329583B2 失效
公开(公告)号：JPS6329583B2
公开(公告)日：1988-06-14
申请号：JP13123480
申请日：1980-09-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： HARADA HIROTSUGU , SATO SHINICHI , FUKUMOTO HAYAAKI , TAKANO HIROZO , KOTANI HIDEO , KAYANO SHINPEI
IPC分类号： B01J19/08 , C23C16/50 , H01J37/32 , H01L21/18 , H01L21/205

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