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11. 发明专利

JPS5239376A PROCESS FOR PRODUCTION OF SILICON NITRIDE MEMBRANE 失效
公开(公告)号：JPS5239376A
公开(公告)日：1977-03-26
申请号：JP11478575
申请日：1975-09-25
申请人： HITACHI LTD
发明人： TAMAOKI YOUICHI , SHINTANI AKIRA , SUDA TADASHI , KOGIRIMA MASAHIKO , MAKI MICHIYOSHI
IPC分类号： H01L21/318 , C23C16/34
摘要： PURPOSE:To form silicon nitride membrane with uniform width and with few pin-halls by suppressing eneration of large size particles in gaseous phase.

12. 发明专利

JPS51107767A 失效
公开(公告)号：JPS51107767A
公开(公告)日：1976-09-24
申请号：JP3218375
申请日：1975-03-19
申请人： HITACHI LTD
发明人： SAIDA KOJI , KOGIRIMA MASAHIKO , MAKI MICHOSHI , PPONMA KOJI , KAWAMURA MASAO
IPC分类号： C30B25/02 , C23C16/50 , H01L21/205

13. 发明专利

JPS5958862A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5958862A
公开(公告)日：1984-04-04
申请号：JP16835982
申请日：1982-09-29
申请人： Hitachi Ltd
发明人： KOGIRIMA MASAHIKO , TAMAOKI YOUICHI , SHIRAKI YASUHIRO
IPC分类号： H01L29/73 , H01L21/203 , H01L21/331 , H01L29/72
CPC分类号： H01L29/72
摘要： PURPOSE:To obtain a semiconductor device having the favorable characteristic and the flat surface even when thickness of a base layer is 150nm or less by a method wherein an emitter layer on the base layer is removed partially, an Si layer is provided selectively, and a base electrode is formed. CONSTITUTION:An epitaxial layer 2 of about 1mum thickness added with Sb is formed on a P type Si substrate 1, and an N type collector layer 3 added with Sb, the P type base layer 4 added with Ga, the N type emitter layer 5 added with Sb are laminated according to the molecular beam epitaxy method by about 0.4mum, 0.05mum, 0.15mum thicknesses respectively. Holes to reach the substrate 1 are formed according to dry etching, and are buried with SiO2 6a to isolate between elements, and a collector electrode, the base and the emitter are isolated similarly by SiO2 6b. A part of the layer 5 is selectively removed using hydrazine, and when thermal oxidation is performed, an SiO2 layer 7 is generated thick on the layer 5 and thin on the layer 4. The thin film 7 on the layer 4 is removed an Si layer 8 added with B is grown by about 120nm thickness only on the layer 4, and the surface is flattened. After then, the whole surface is oxidized, and PdSi electrodes are adhered. According to this construction, the base layer is thin to prevent the leakage current of B-C junction from enlargement, and the flat surface can be obtained.
摘要翻译：目的：为了获得具有良好特性和平坦表面的半导体器件，即使在基底层的厚度为150nm以下的情况下，通过部分去除基底层上的发射极层的方法，选择性地提供Si层，并且形成基极。构成：在P型Si衬底1上形成约1μm厚的Sb附着的外延层2，添加Sb的N型集电极层3，添加有Ga的P型基极层4，N型发射极层5 根据分子束外延法分别加入Sb约0.4μm，0.05μm，0.15μm厚度。通过干蚀刻形成到达衬底1的孔，并且用SiO 2 6a掩埋以隔离元件，并且通过SiO 2 6b类似地分离集电极，基极和发射极。使用肼选择性地除去层5的一部分，当进行热氧化时，在层5上产生厚的SiO 2层7，在层4上产生薄的SiO 2层。去除层4上的薄膜7，添加B的B仅在层4上生长约120nm厚度，并且表面变平。然后，整个表面被氧化，并且PdSi电极被粘附。根据该结构，基层较薄，能够防止B-C结的漏电流放大，能够得到平坦面。

14. 发明专利

JPS595558B2 JPS595558B2 - 失效
公开(公告)号：JPS595558B2
公开(公告)日：1984-02-06
申请号：JP1402676
申请日：1976-02-13
申请人： Hitachi Ltd
发明人： KOGIRIMA MASAHIKO , SAIDA HIROJI , SHINTANI AKIRA , SUZUKI MICHIO , MAKI MICHOSHI
IPC分类号： C30B25/16 , C23C16/455 , H01L21/205
CPC分类号： C23C16/455

15. 发明专利

JPS58130194A MANUFACTURE OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS58130194A
公开(公告)日：1983-08-03
申请号：JP885082
申请日：1982-01-25
申请人： HITACHI LTD
发明人： KURODA SATOYOSHI , KOZUKA KOUJI , TAKANO YUKIO , KOGIRIMA MASAHIKO
IPC分类号： C30B15/14 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/208
摘要： PURPOSE:To obtain a silicon single crystal of high quality without growing the deposited corner by growing a silicon single crystal by a pulling method, separating the crystal from the melt at once, and treating under heat it at a high temp. CONSTITUTION:Polycrystalline silicon is filled into a crucible 1 and melted by heating with a heater 2. By pulling up a seed crystal 3, a single crystal ingot 4 is grown while maintaining the relative position of the heater 2 to the surface of the melt. After finishing the crystal growth, the resulting single crystal ingot 4 is positioned just above the surface of the residual melt 5, and the heater 2 is moved upward to the position 2'. The ingot 4 is heated at 1,200 deg.C- the m.p. of silicon for a prescribed time with the heater 2. The power supply is then cut, and the single crystal is pulled up and rapidly cooled. By the heat treatment a silicon single crystal of high quality suitable for a semiconductor integrated circuit, etc. is obtd.

16. 发明专利

JPS58125833A DECOMPRESSION OXIDATION METHOD 失效
公开(公告)号：JPS58125833A
公开(公告)日：1983-07-27
申请号：JP758682
申请日：1982-01-22
申请人： HITACHI LTD
发明人： KOGIRIMA MASAHIKO
IPC分类号： H01L21/316
摘要： PURPOSE:To oxidize the surface of a wafer with a large diameter uniformly by oxidizing the wafer while keeping total pressure in a reaction pipe to atmospheric pressure or less. CONSTITUTION:The inside of the quartz reaction pipe 2 is kept to one atmospheric pressure or less, and an oxidizing gas 5 containing O2, H2O or O2 is forwarded into the reaction pipe, and heated 6 at a high temperature. Since an atmosphere is brought to atmospheric pressure or less, the diffusion velocity of the gas in the reaction pipe increases, and the uniformity of the thickness of an oxide film is improved in the peripheral section and central section of the wafer 1. The improvement is particularly remarkable especially when the diameter of the wafer is 1cm or more. When the inside of the reaction pipe is brought to low pressure, the growth rate of the oxide film slows down, but trouble is not generated practically when O2 is used as a raw material gas or the raw material gas is changed into plasma and increased.

17. 发明专利

JPS5898949A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5898949A
公开(公告)日：1983-06-13
申请号：JP19681281
申请日：1981-12-09
申请人： HITACHI LTD
发明人： AOKI SHIGERU , ISOMAE SEIICHI , KOGIRIMA MASAHIKO
IPC分类号： H01L21/76 , H01L21/316 , H01L21/339 , H01L21/762 , H01L29/762
摘要： PURPOSE:To reduce bird beaks and defects produced at the selective oxidation time by coating the surface of a silicon substrate with an SiO2 film and an Si2N4 film and then heat treating it at a temperature higher than the specific temperature in oxidative atmosphere. CONSTITUTION:An Si3N4 film of 2,000-3,000Angstrom thick is formed by a vapor phase growth method on an Si (100) wafer 3 under low pressure (0.6Torr) at 770 deg.C. The selectively oxidized mask 2 of the Si3N4 is formed by reactive sputter etching with a photoresist 1 as a mask after the mask 1 is formed by an ordinary optical exposure technique. The oxidizing temperature of the selective oxidation is higher than 1,050 deg.C, and an element isolating oxidized film 4 is formed in steam atmosphere.

18. 发明专利

JPS57153426A DECOMPRESSING CVD METHOD 失效
公开(公告)号：JPS57153426A
公开(公告)日：1982-09-22
申请号：JP3797881
申请日：1981-03-18
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , KAWAI TOSHIO , SAIDA HIROJI , MATSUOKA NAOYUKI , TOCHIKUBO HIROO , KANAI AKIRA , KOGIRIMA MASAHIKO
IPC分类号： H01L21/205 , C30B25/14 , H01L21/31
摘要： PURPOSE:To obtain a film excellent at both the accuracy of resistivity and the accuracy of film thickness by also feeding in one part of a source gas from the lower stream side of a substrate when the source gas and a carrier gas are supplied to the substrate heated and the film is formed onto the surface of the substrate. CONSTITUTION:A jig 3 to which a large number of the Si substrates 4 are erected at intervals is disposed into a quartz reaction pipe 2 surrounded by an electric resistance type heating oven 1, and the substrates 4 are heated at approximately 1,000 deg.C. H2 As the carrier gas, SiH2Cl2 as the source gas and PH3 diluted with H2 as a doping gas are forwarded through a flowmeter 5 and an introducing pipe 6 from the upper stream side of the reaction pipe 2, the epitaxial thin-film is grown on the surface of the substrate 4, and residual gases are discharged to the outside by using an exhaust pipe 7, a cooler 8, a root pump 9 and a rotary pump 10. In such constitution, one part of PH3 is branched and ejected from a nozzle 11 adjoined to the substrate 4 at the lower stream side of the reaction pipe 2, and the fall of the concentration of the doping gas in the flow direction is corrected.

19. 发明专利

JPS56169199A MANUFACTURE OF SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS56169199A
公开(公告)日：1981-12-25
申请号：JP7269880
申请日：1980-06-02
申请人： HITACHI LTD
发明人： KURODA SATOYOSHI , MATSUBARA SUNAO , KOGIRIMA MASAHIKO
IPC分类号： C30B15/36 , C30B15/00 , H01L21/02 , H01L21/208
摘要： PURPOSE:To efficiently manufacture a square wafer by using a seed crystal having a crystal habit apt to become square, rotating the seed crystal and a crucible, and making the temp. difference of a melt smaller in the direction of the kinetic diameter. CONSTITUTION:A crucible is set, and a silicon single crystal having orientation as the axial direction is used as a seed crystal 3 to grow a part 4 almost equal to the crystal 3 in diameter at the lower end of the crystal 3 by several cm length. At the tip of the crystal part 4, 4 equivalent (111) faces are grown to a thickening crystal part 5 while reducing the melt temp. and the pulling rate. When the part 5 reaches a prescribed thickness, a heater is slowly lowered at about 0.1-0.5mm./min rate, and simultaneously the crystal is pulled at about 1mm./min pulling rate to grow a square crystal part 6 having the uniform thickness while keeping the temp. gradient of the melt in the direction of the kinetic diameter at T

20. 发明专利

JPS56108527A DIFFUSION OF IMPURITY 失效
公开(公告)号：JPS56108527A
公开(公告)日：1981-08-28
申请号：JP880980
申请日：1980-01-30
申请人： HITACHI LTD
发明人： NANBA MITSUO , KOGIRIMA MASAHIKO , KOZUKA KOUJI , SHINTANI AKIRA
IPC分类号： B01J19/00 , C30B31/06 , H01L21/22 , H01L21/223
摘要： PURPOSE:To very easily diffuse hardly diffusible impurities by a method in which impurities are diffused from gaseous phase by providing alumina or aluminum on the surface or its neighbor of a wafer where an impurities-diffused layer is to be formed. CONSTITUTION:According to an actual example, the first and second zones of a two-stage furnace tube are kept at 750 deg.C and 1,200 deg.C, respectively, and Sb2O3 as an antimony diffusion sorce is put in a platinum box in the first zone. Also, in the second zone, wafers 1-4 are set uprightly on a jig 6 and sapphire plates 5 are arranged at an interval of (d) on the surface A where the antimony of the wafers 3 and 4 is to be diffused. As a result of the diffusion of Sb under the conditions of N2 gas as a carrier gas, a source gas concentration of 0.65mol%, d=4mm., a temperature of 1,200 deg.C, and 45min, the sheet resistance of the wafers 1 and 2 was 53OMEGA/ , and also of the surface A of the wafers 3 and 4 facing the sapphire plates 5 was 18OMEGA/ .

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