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    • 133. 发明专利
    • Tunnel magnetoresistive element
    • 隧道磁电元件
    • JP2008218641A
    • 2008-09-18
    • JP2007052767
    • 2007-03-02
    • Tohoku Univ国立大学法人東北大学
    • OKANE MIKIHIKOMIYAZAKI TERUNOBUSAKURABA YUUYAHATTORI MASASHIANDO YASUO
    • H01L43/08G01R33/09G11B5/39H01F10/16H01F10/30H01F41/28H01F41/32
    • PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistive element in which at least one ferromagnetic body comprises a full Heusler alloy having spin polarizability of 100%.
      SOLUTION: The tunnel magnetoresistive element comprises a first ferromagnetic body, a second ferromagnetic body, and an insulator sandwiched between these ferromagnetic bodies wherein at least one ferromagnetic body has a single crystal of full Heusler alloy grown epitaxially on the (100) face of a base material and a thin Mg layer is provided between the full Heusler alloy and the insulator. Preferably, the full Heusler alloy is an intermetallic compound represented by a composition formula X
      2 YZ. In particular, the full Heusler alloy is preferably composed of Co
      2 MnSi.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种隧道磁阻元件,其中至少一个铁磁体包括具有100%的自旋极化率的完整Heusler合金。 隧道磁阻元件包括第一铁磁体,第二铁磁体和夹在这些铁磁体之间的绝缘体,其中至少一个铁磁体具有在(100)面上外延生长的完整Heusler合金的单晶 在整个Heusler合金和绝缘体之间提供基材和薄Mg层。 优选地,完整的Heusler合金是由组成式X 2 YZ表示的金属间化合物。 特别地,完整的Heusler合金优选由Co 2 MnSi组成。 版权所有(C)2008,JPO&INPIT