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1. 发明公开

EP4364202A1 LIGHT EMITTING MODULES WITH OPTICAL DATA TRANSMISSION 审中-公开
公开(公告)号：EP4364202A1
公开(公告)日：2024-05-08
申请号：EP22744402.3
申请日：2022-06-30
申请人： Barco n.v.
发明人： GERETS, Peter , WILLEM, Patrick , VAN DEN BOSSCHE, Bart , VAN EESSEN, Wim
IPC分类号： H01L25/16 , H01L25/075 , H01L31/14 , H01L31/16 , G09G3/32
CPC分类号： H01L25/167 , G09G3/32 , H01L25/0753 , H01L33/58 , G09G2300/02320130101 , G09G2370/0820130101 , G09G2370/1820130101 , H01L31/167

2. 发明公开

EP1222691A1 LIGHT-EMITTING MATRIX ARRAY DISPLAY DEVICES WITH LIGHT SENSING ELEMENTS 审中-公开
标题翻译：与光敏元件矩阵显示装置
公开(公告)号：EP1222691A1
公开(公告)日：2002-07-17
申请号：EP01951569.1
申请日：2001-06-07
申请人： Koninklijke Philips Electronics N.V.
发明人： YOUNG, Nigel, D. , SHANNON, John, M.
IPC分类号： H01L27/00 , H01L31/14 , H01L31/16 , G09G3/32
CPC分类号： H01L27/3269 , G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/043 , G09G2360/148
摘要： A display device has an array of pixels (10) comprising light emitting display elements (20), for example EL elements, carried on a substrate (50) and associated light sensing elements (40) responsive to light emitted by the display elements. The light sensing elements each comprise a gated photosensitive thin film device such as a TFT structure or a lateral gated pin device having a semiconductor layer (52) with contact regions (53, 54) laterally spaced on the substrate and separated by a gate controlled region (55). A part of the associated display element (20) extends over the gate controlled region with an electrode (70) of the display element serving as the gate of the photosensitive device thereby ensuring good optical coupling between the display element and the photosensitive device and enabling the gate to be appropriately biased. Such an arrangement enables, for example, the provision of electro-optic feedback control in the pixel in comparatively simple manner.

3. 发明公开

EP0721654A4 IMAGE INTENSIFIER TUBE 失效
标题翻译：图像增强管
公开(公告)号：EP0721654A4
公开(公告)日：1996-05-30
申请号：EP93924902
申请日：1993-09-29
申请人： INT STANDARD ELECTRIC CORP
发明人： THOMAS NILS I , FIELD ROBERT JETT
IPC分类号： G01J1/02 , G01J1/24 , G02F1/01 , H01J1/34 , H01J31/49 , H01J31/50 , H01J40/06 , H01J40/14 , H01J43/04 , H01L31/08 , H01L31/14 , H04N3/08 , H04N3/30
CPC分类号： H01J31/50
摘要： An image intensifier tube (40) that utilizes a photoresponsive layer for producing electrons in response to received radiation, a solid state electron amplifier for multiplying the electrons produced by the photoresponsive layer, a cold cathode for emitting electrons into vacuum, and a phosphor screen for converting impinging electrons into a visible image. The solid state electron amplifier (54) is formed as a semiconductive layer interposed between a photoresponsive layer and a negative electron affinity layer on the photocathode (42). The solid state electron amplifier (54) receives the electrons produced by the photoresponsive layer, multiplies the electrons and directs the electrons to the negative electron affinity layer. The negative electron affinity layer (58) then directs the electrons through a vacuum to the phosphor screen (74) producing a viewed image.

4. 发明公开

EP0288267A2 An optical semiconductor device 失效
标题翻译： Optische Halbleiteranordnung。
公开(公告)号：EP0288267A2
公开(公告)日：1988-10-26
申请号：EP88303559.4
申请日：1988-04-20
申请人： NEC CORPORATION
发明人： Kasahara, Kenichi c/o NEC Corporation , Tashiro, Yoshiharu c/o NEC Corporation
IPC分类号： H01L31/12 , H01L31/10 , H01L31/14
CPC分类号： H01L33/0025 , G11C7/005 , G11C11/39 , H01L31/125
摘要： The optical semiconductor device comprises cathode (23) and anode regions (26), and a gate region (25) having a forbidden band gap narrower than those of the cathode and anode regions. The gate region (25) is sandwiched between the cathode and anode regions (23, 26). The optical semiconductor device further comprises a plurality of windows (20A, 20B) for receiving and radiating light so that the alignment of optical axes can be easily performed for a plurality of input (1A) and output (1B) light beams. Various optical logic, memory and other devices are disclosed.
摘要翻译：光学半导体器件包括阴极（23）和阳极区域（26），以及具有比阴极和阳极区域窄的禁带宽的栅极区域（25）。栅极区域（25）夹在阴极和阳极区域（23,26）之间。光学半导体装置还包括用于接收和照射光的多个窗口（20A，20B），使得可以容易地对多个输入（1A）和输出（1B）光束执行光轴的对准。公开了各种光学逻辑，存储器和其它设备。

5. 发明授权

EP1635488B1 Optical transmission system using in-line amplifiers 失效
标题翻译：具有串联放大器的光传输系统
公开(公告)号：EP1635488B1
公开(公告)日：2013-09-18
申请号：EP05023970.6
申请日：1997-09-24
申请人： FUJITSU LIMITED
发明人： Miyauchi, Akira , Yamane, Kazuo , Kawasaki, Yumiko , Okano, Satoru, Fujitsu Hokkaido Digital Tech. Ltd.
IPC分类号： H04B10/25 , H01L31/14
CPC分类号： H04B10/25137 , H01L31/14 , H04B10/2543 , H04B2210/252 , H04B2210/256

6. 发明公开

EP0463504A2 Optischer Duplexer für bidirektionale optische Informationsübertragung 失效
标题翻译： Optischer Duplexerfürbidirektionale optischeInformationsübertragung。
公开(公告)号：EP0463504A2
公开(公告)日：1992-01-02
申请号：EP91109745.9
申请日：1991-06-13
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Heise, Gerhard, Dipl.-Phys.
IPC分类号： G02B6/28 , H01L31/14 , G02B6/42 , G02B6/12
CPC分类号： G02B6/12007 , G02B6/29332 , G02F1/0147 , H04B10/2504
摘要： 2.1 Bei einem optischen Duplexer für bidirektionale Informationsübertragung soll eine Phasendifferenz zwischen zwei auf verschiedenen optischen Wegen (W L2, W L3) zum Duplexer zurückreflektierten optischen Wellen zur Herabsetzung eines Nahnebensprechens unter Umgehung der Erzeugung einer Weglängendifferenz zwischen den beiden Wegen erzeugt werden.
2.2 Dazu ist eine Einrichtung (PS) zum Regeln der Phase einer auf einem der beiden Wege in den Duplexer zurückreflektierten optischen Welle vorgesehen, oder die beiden Wege weisen eine durch eine Brechzahldifferenz erzeugte optische Weglängendifferenz auf. Insbesondere ist es günstig, die Phasendifferenz zwischen den auf beiden Wegen in den Duplexer zurückreflektierten optischen Wellen auf /2 einzustellen oder festzulegen.
2.3 Anwendung bei der bidirektionalen Informationsübertragung.
摘要翻译： 2.1在用于双向信息传输的光双工器中，目的是产生沿着不同光路（W L2，W L3）向双工器回射的两个光波之间的相位差，以便减少近端串扰，避免了两条路径之间波形差异的产生。 2.2为此，提供了一种设备（PS）来控制在两个路径中的一个路径上回射到双工器中的光波的相位，或者两条路径具有由折射率差产生的光学波长差。特别地，有利的是将在两路径上回射到双工器中的光波之间的相位差设置或固定为/ 2。 2.3双向信息传输中的应用。

7. 发明公开

EP0441521A1 Solid state X-ray imaging device 失效
标题翻译： Röntgen-Abbildungsvorrichtung ausFestkörperbauelementen。
公开(公告)号：EP0441521A1
公开(公告)日：1991-08-14
申请号：EP91300700.1
申请日：1991-01-30
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： Tri Tran, Nang, c/o Minnesota Mining and , Dahlquist, John C., c/o Minnesota Mining and
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/115 , H01L31/14
CPC分类号： H01L27/14609 , H01L27/14618 , H01L27/14663 , H01L2924/0002 , H01L2924/00
摘要： An x-ray image detection device (12) includes a luminescent layer (28) containing an x-ray sensitive phosphor, an amorphous silicon Schottky barrier diode array layer (30), a polysilicon thin film transistor array layer (32), and read-out circuitry (34). The phosphor in the luminescent layer (28) converts incident x-rays to corresponding visible light radiation. The diode array generates an electrical signal corresponding to the intensity of light from the layer (28). Current generated in photodiode array (30) is fed to the gates of the transistors in array layer (32). Read-out circuitry (34) amplifies the signals in the transistors in array layer (32), and converts the signals to digital form.
摘要翻译： X射线图像检测装置（12）包括含有X射线敏感荧光体的发光层（28），非晶硅肖特基势垒二极管阵列层（30），多晶硅薄膜晶体管阵列层（32）输出电路（34）。发光层（28）中的荧光体将入射的X射线转换成相应的可见光辐射。二极管阵列产生对应于来自层（28）的光强度的电信号。在光电二极管阵列（30）中产生的电流被馈送到阵列层（32）中的晶体管的栅极。读出电路（34）放大阵列层（32）中的晶体管中的信号，并将该信号转换成数字形式。

8. 发明公开

EP0288267A3 An optical semiconductor device 失效
标题翻译：光学半导体器件
公开(公告)号：EP0288267A3
公开(公告)日：1989-11-23
申请号：EP88303559.4
申请日：1988-04-20
申请人： NEC CORPORATION
发明人： Kasahara, Kenichi c/o NEC Corporation , Tashiro, Yoshiharu c/o NEC Corporation
IPC分类号： H01L31/12 , H01L31/10 , H01L31/14
CPC分类号： H01L33/0025 , G11C7/005 , G11C11/39 , H01L31/125
摘要： The optical semiconductor device comprises cathode (23) and anode regions (26), and a gate region (25) having a forbidden band gap narrower than those of the cathode and anode regions. The gate region (25) is sandwiched between the cathode and anode regions (23, 26). The optical semiconductor device further comprises a plurality of windows (20A, 20B) for receiving and radiating light so that the alignment of optical axes can be easily performed for a plurality of input (1A) and output (1B) light beams. Various optical logic, memory and other devices are disclosed.

9. 发明公开

EP0206661A2 A semiconductor laser apparatus. 失效
标题翻译： Halbleiterlaservorrichtung。
公开(公告)号：EP0206661A2
公开(公告)日：1986-12-30
申请号：EP86304512
申请日：1986-06-12
申请人： SHARP KK
发明人： YAMAMOTO OSAMU , HAYASHI HIROSHI , YAMAMOTO SABURO
IPC分类号： H01S5/00 , H01S5/068 , H01S5/14 , H01S3/08 , H01L31/14 , H01S3/02 , H01S3/133
CPC分类号： H01S5/14
摘要： A semiconductor laser apparatus has a semiconductor laser device (1) and a semiconductor device (7), both of which are fixed on a single mounting base (2) with a spacing of several mm or less therebetween in such a manner that one of the side faces (24) of said semiconductor device (7) faces a laser-emitting facet of said semiconductor laser device (1) in a parallel manner, the said face of said semicondurctor device being a facet, at least a part of which is coated with a reflecting dielectric film (25) functioning so as to have laser light from said semiconductor laser device (1) return to said semiconductor laser device (1) therefrom.
摘要翻译：本发明提供一种半导体激光装置，其特征在于，具有半导体激光装置（1）和半导体装置（7），所述半导体激光装置（1）和半导体装置（7）以这样的方式固定在一个安装基座（2）所述半导体器件（7）的侧面（24）以平行方式面对所述半导体激光器器件（1）的激光发射面，所述半导体器件的所述面是小面，所述小面的至少一部分被涂覆具有反射电介质膜（25），以使来自所述半导体激光装置（1）的激光从所述半导体激光装置（1）返回到所述半导体激光装置（1）。

10. 发明公开

EP0051133A3 Photon emitters and image converters comprising photon emitters 失效
标题翻译：光电发射体和包含光子发射体的图像转换器
公开(公告)号：EP0051133A3
公开(公告)日：1983-03-16
申请号：EP81107087
申请日：1981-09-09
申请人： International Business Machines Corporation
发明人： Lanza, Conrad , Woodall, Jerry McPherson
IPC分类号： H01L31/14
CPC分类号： H01L33/0025 , H01L31/153
摘要： A photon emitter which converts carriers from a low energy to a higher energy comprises a semiconductor body with a graded bandgap intrinsic conductivity region with an electric field impressed thereacross which causes electron or hole carriers under the influence of the electric field to move from a low energy gap region of the semiconductor body to a region that has a wider energy gap where recombination will produce a higher energy photon. The structure is useful in image conversion and electroluminescent detector applications.
摘要翻译：将载流子从低能量转换为更高能量的光子发射器包括具有梯度带隙本征导电区域的半导体本体，其上施加有电场的电场，其在电场的影响下使电子或空穴载流子从低能量半导体器件的间隙区域到具有更大能隙的区域，其中复合将产生更高能量的光子。该结构在图像转换和电致发光检测器应用中是有用的。

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