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1. 发明授权

EP2529417B1 INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR 有权
公开(公告)号：EP2529417B1
公开(公告)日：2019-09-04
申请号：EP11737739.0
申请日：2011-01-28
申请人： Howard University
发明人： BATES, Clayton W., Jr.
IPC分类号： H01L31/109 , H01L31/09 , H01L31/0352 , H01L31/108 , H01J31/49 , H01J1/34

2. 发明公开

EP3028292A1 A DETECTOR AND METHOD FOR DETECTING ULTRAVIOLET RADIATION 审中-公开
标题翻译：检测器和检测方法的紫外辐射增强
公开(公告)号：EP3028292A1
公开(公告)日：2016-06-08
申请号：EP13744444.4
申请日：2013-07-31
申请人： CERN - European Organization For Nuclear Research
发明人： BREUIL, Philippe , PESKOV, Vladimir , MARTINENGO, Paolo
IPC分类号： H01J1/34 , G01T1/185 , G08B17/12 , H01J1/78 , H01J29/38 , H01J31/49 , H01J40/16 , H01J47/02
CPC分类号： H01J1/34 , G01J1/429 , G08B17/12 , H01J1/78 , H01J29/38 , H01J31/49 , H01J40/16
摘要： An electron filtering layer placed on a photocathode of a UV light detector allows to selectively filter out electrons generated from a photoconversion of long wavelengths. The filter may be tuned by selecting the material and the thickness of the electron filtering layer. By means of the filtering layer, background noise due to visible parts of the spectrum may be efficiently suppressed. Applications of the invention include a solar-blind flame and/or smoke detector.

3. 发明授权

EP1266391B1 STRAHLUNGSWANDLER MIT EINEM SZINTILLATOR, EINER PHOTOKATHODE UND EINEM ELEKTRONENVERVIELFACHER 有权
标题翻译： WITH A闪烁光阴极和光电倍增辐射转换器
公开(公告)号：EP1266391B1
公开(公告)日：2008-07-16
申请号：EP01935937.1
申请日：2001-03-22
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： FUCHS, Manfred , HELL, Erich , KNÜPFER, Wolfgang , MATTERN, Detlef
IPC分类号： H01J31/49 , H01J31/48 , G01T1/28
CPC分类号： H01J31/49 , H01J2231/50036 , H01J2231/50068 , H01J2231/501
摘要： The invention relates to a radiation converter, comprising a radiation absorber (2), for the generation of photons as a function of the intensity of the incident x-ray radiation and a photocathode (3), arranged within the radiation absorber (2), at a distance (a) in the direction of radiation. Said photocathode (3) is for the generation of electrodes as a function of the photons emitted by the radiation absorber (2), with a device for accelerating the electrons emitted by the photocathode to an electron detector (5). Said detector generates an electrical signal as a function of the arriving electrons. An electron multiplier (4) is arranged between the photocathode (3) and the electron detector (5), whereby the electrons emitted y the photocathode (3) may be multiplied by the electron multiplier (4).

4. 发明授权

EP1154457B1 ELECTRON TUBE 有权
标题翻译：电子管
公开(公告)号：EP1154457B1
公开(公告)日：2003-11-26
申请号：EP99900652.1
申请日：1999-01-21
申请人： Hamamatsu Photonics K.K.
发明人： SUYAMA, Motohiro Hamamatsu Photonics K.K. , KAGEYAMA, Akihiro Hamamatsu Photonics K.K. , MURAMATSU, Masaharu Hamamatsu Photonics K.K.
IPC分类号： H01J29/44 , H01J31/26 , H01J31/49 , H01L27/14 , H01J29/92
CPC分类号： H01J31/26 , H01J29/92 , H01J31/49 , H01J2229/922 , H01J2231/50068
摘要： In an electron tube (1), a space (S) between the periphery (15b) of a semiconductor device (15) and a stem (11) is filled with an insulating resin (20). Therefore, the insulating resin (20) functions as a reinforcing member even during the assembly of the electron tube (1) under high-temperature condition, thereby preventing a bump (16) from coming off a bump connection part (19). Since the space (S) is only partly closed by the resin (20), the space between the semiconductor device (15) and the stem (11) is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part (15a) at the center of the semiconductor device (15) and the surface (C) of the stem (11), whereby air expanding at high temperature does not damage the electron incidence part (15a) of the back-incidence semiconductor device (15).

5. 发明授权

EP0869533B1 X-RAY IMAGE TUBE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译： X射线管和方法对于同
公开(公告)号：EP0869533B1
公开(公告)日：2003-11-19
申请号：EP97940412.6
申请日：1997-09-18
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC ENGINEERING CORPORATION
发明人： TANNO, Kazutoshi , SEKIJIMA, Yoshinobu , YAMADA, Hitoshi , NOJI, Takashi
IPC分类号： H01J31/49 , H01J31/50 , H01J29/50 , H01J9/233 , H01J29/38
CPC分类号： H01J29/385 , G21K4/00 , G21K2004/06 , G21K2004/12 , H01J31/501 , H01J2231/50036 , H01J2231/50063 , H01J2231/5053
摘要： In order to give a sufficiently strong adhesive strength to the input screen of an X-ray image tube, to improve the resolution of the output picture of the image tube, and to secure the luminance uniformity of the output picture as necessary, the surface of the input substrate of the image tube composed of aluminum or an aluminum alloy is varnished so that fine recessing and projecting sections of the substrate material can be eliminated from the surface and nondirectional gentle recessing and projecting sections can be left as they are. Such gentle recessing and processing sections that the average distances between adjacent valleys fall within the range of 50-300 mu m and average heights between the crests and valleys fall within the range of 0.3-4.0 mu m are suitable for those to be left as they are. When the input substrate is varnished in the above-mentioned way, the resolution of the output picture of the image tube can be improved because the diffusion of light on the surface of the input substrate is suppressed, and the picture noise which is caused by the fine recessing and projecting sections is reduced.

6. 发明公开

EP1152448A1 ELECTRON TUBE 有权
标题翻译： ELEKTRONENSTRAHLRÖHRE
公开(公告)号：EP1152448A1
公开(公告)日：2001-11-07
申请号：EP99901128.1
申请日：1999-01-21
申请人： Hamamatsu Photonics K.K.
发明人： SUYAMA, Motohiro , KAGEYAMA, Akihiro , MURAMATSU, Masaharu
IPC分类号： H01J29/44 , H01J31/26 , H01J31/49 , H01L27/148
CPC分类号： H01J31/26 , H01J31/49 , H01J2231/50073
摘要： An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO 2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.
摘要翻译：电子管10主要包括套筒12，具有光电阴极表面18的输入板14，杆16和CCD 20.在电子管10的内部设有真空。CCD 20固定在杆上后表面B面对光电阴极表面18.在CCD 20中，在单个导电型半导体衬底64上，埋层66，势垒区68，SiO 2层70，存储电极层72，透射电极层 74和阻挡电极层76形成在其预定位置。在这些层的整个前表面A上形成PSG膜78，以平坦化CCD 20的表面。此外，在整个前表面A上形成主要由SiN构成的SiN膜106在PSG膜之上。

7. 发明授权

EP0760525B1 Electron tube 失效
标题翻译：电子管
公开(公告)号：EP0760525B1
公开(公告)日：1999-10-13
申请号：EP96306276.5
申请日：1996-08-29
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Suyama, Motohiro , Nakamura, Kimitsugu , Ito, Masuo
IPC分类号： H01J31/26 , H01J31/49
CPC分类号： H01J31/26

8. 发明公开

EP0403802A2 X-ray image intensifier and method of manufacturing input screen 失效
标题翻译： Röntgenbildverstärkerund Verfahren zur Herstellung des Eingangsschirmes。
公开(公告)号：EP0403802A2
公开(公告)日：1990-12-27
申请号：EP90109377.3
申请日：1990-05-17
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Anno, Hidero, Intellectual Property Division , Ono, Katsuhiro, Intellectual Property Division
IPC分类号： H01J1/62 , H01J31/49 , H01J9/233
CPC分类号： H01J29/385 , G01T1/28 , G21K4/00
摘要： An X-ray image intensifier includes an input screen (26) for converting incident X-rays into photoelectrons, and an output screen for converting the photoelectrons into visible light. The input screen includes a phosphor layer (38). The phosphor layer has a large number of columnar crystals (33) of a phosphor which have end faces constituting a smooth surface facing the output screen. A low-refractive-index layer (41) is formed on the phosphor layer and made of a material having a refractive index smaller than a refractive index of the phosphor, with respect to the light having a specified wavelength, at which the fluorescence of the phosphor is the most intensive. A photoemissive layer (43) is formed directly or indirectly on the low-refractive-index layer.
摘要翻译： X射线图像增强器包括用于将入射的X射线转换成光电子的输入屏幕（26）和用于将光电子转换成可见光的输出屏幕。输入屏幕包括荧光体层（38）。荧光体层具有大量的荧光体的柱状晶体（33），其端面构成面向输出屏幕的平滑表面。相对于具有特定波长的光，在荧光体层上形成低折射率层（41），该层由具有特定波长的光的折射率小于荧光体的折射率的材料制成，磷光体是最密集的。直接或间接地在低折射率层上形成光发射层（43）。

9. 发明公开

EP2529417A4 INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR 审中-公开
标题翻译： EXTERNER INFRAROT-LICHTEMISSIONSDETEKTOR
公开(公告)号：EP2529417A4
公开(公告)日：2017-05-03
申请号：EP11737739
申请日：2011-01-28
申请人： HOWARD UNIV
发明人： BATES CLAYTON W JR
IPC分类号： H01L31/109 , H01J1/34 , H01J31/49 , H01L31/0352 , H01L31/09 , H01L31/108
CPC分类号： H01L31/035209 , H01J1/34 , H01J31/49 , H01L31/108
摘要： An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20-30 atomic percentage metal particles (such as silver) having an average particle size of about 5-10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 μm to 10 μm thick, and preferably about 3 μm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.
摘要翻译：红外外部光发射检测器可以具有包括n型半导体层和p层的n-p异质结; 所述n层半导体包括嵌入有形成肖特基势垒的纳米颗粒的掺杂硅; 并且p层是p型金刚石膜。纳米颗粒可以是平均粒径为约5-10nm的约20-30个原子百分比金属颗粒（例如银）。 p层可以具有负电子亲和力的表面层。 n层可以在约3μm至10μm厚的范围内，并且优选地约3μm厚。掺杂的硅可以掺杂选自由磷和锑组成的列表中的元素。

10. 发明公开

EP3107115A1 DETECTOR 无效
标题翻译：声学探测器
公开(公告)号：EP3107115A1
公开(公告)日：2016-12-21
申请号：EP16175120.1
申请日：2016-06-17
申请人： Photek Limited
发明人： Milnes, James , Conneely, Tom , Lapington, Jonathan
IPC分类号： H01J43/12 , H01J31/49
CPC分类号： G01T1/2935 , H01J31/49 , H01J43/12
摘要： A detector for an electron multiplier comprising: a substrate (102) comprising a dielectric material, the substrate having a first face (110) and an opposing second face (108); a charge collector (122) provided adjacent the first face (110) of the substrate (102); an anode (104a-d) within the substrate (102), the anode (104a-d) spaced from the first face (110), such that the anode (104a-d) is capacitively coupled to the charge collector (122), so that charge incident on the charge collector (122) generates an image charge on the anode (104a-d); and a conduit contact (106a-d), coupled to the anode (104a-d) and passing through the substrate (102) to the second face (108) of the substrate (108).
摘要翻译：一种用于电子倍增器的检测器，包括：包括电介质材料的衬底（102），所述衬底具有第一面（110）和相对的第二面（108）; 设置在所述衬底（102）的所述第一面（110）附近的电荷收集器（122）; 在所述衬底（102）内的阳极（104a-d），所述阳极（104a-d）与所述第一面（110）间隔开，使得所述阳极（104a-d）电容耦合到所述电荷收集器（122）使得入射到电荷收集器（122）的电荷在阳极（104a-d）上产生图像电荷; 以及耦合到所述阳极（104a-d）并且穿过所述衬底（102）到所述衬底（108）的所述第二面（108）的导管接触件（106a-d）。

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