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    • 1. 发明公开
    • PHOTOMULTIPLIER
    • 光电倍增
    • EP1892749A1
    • 2008-02-27
    • EP06756886.5
    • 2006-06-01
    • HAMAMATSU PHOTONICS KABUSHIKI KAISHA
    • KYUSHIMA, HiroyukiSHIMOI, HidekiSUGIYAMA, HiroyukiKISHITA, HitoshiKIMURA, SuenoriMASUDA, YujiOHMURA, Takayuki
    • H01J43/24H01J43/12
    • H01J43/24
    • The present invention relates to a photomultiplier having a fine structure capable of realizing high detection accuracy by effectively suppressing cross talk among electron-multiplier channels. The photomultiplier comprises a housing whose inside is maintained vacuum, and, in the housing, a photocathode, an electron-multiplier section, and anodes are disposed. The electron-multiplier section has groove portions for cascade-multiplying photoelectrons as electron-multiplier channels, and the anodes are constituted by channel electrodes corresponding to the groove portions respectively defined by wall parts. In particular, at least parts of the respective channel electrodes are located in spaces sandwiched between pairs of wall parts defining the corresponding groove portions.
    • 本发明涉及具有能够通过有效地抑制电子倍增器通道之间的串扰而实现高检测精度的精细结构的光电倍增器。 光电倍增管包括其内部保持真空的外壳,并且在外壳中设置光电阴极,电子倍增器部分和阳极。 电子倍增器部分具有用于级联倍增作为电子倍增器通道的光电子的沟槽部分,阳极由与分别由壁部分限定的沟槽部分对应的沟道电极构成。 特别地,各个通道电极的至少一部分位于夹在限定相应凹槽部分的成对壁部分之间的空间中。
    • 4. 发明公开
    • Photomultiplier
    • 光电倍增管
    • EP0714117A2
    • 1996-05-29
    • EP95308117.1
    • 1995-11-14
    • HAMAMATSU PHOTONICS K.K.
    • Suyama, MotohiroMuramatsu, MasaharuOishi, MakotoIshikawa, YoshitakaYamamoto, Koei
    • H01J43/12H01J43/10H01J1/32
    • H01L31/1075H01J43/04H01J43/12
    • In a photomultiplier of the present invention, a semiconductor device (60) arranged in an envelope (20) to oppose a photocathode (40) is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by epitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
    • 在本发明的光电倍增管中,布置在与光电阴极(40)相对的封套(20)中的半导体器件(60)由第一导电类型的半导体衬底,第二导电类型的载流子倍增层 从通过外延生长在半导体衬底上形成的第一导电类型,形成在载流子倍增层上且具有比载流子倍增层高的掺杂浓度的第二导电类型的击穿电压控制层, 第一绝缘层,形成在击穿电压控制层和载流子倍增层上,同时部分地暴露击穿电压控制层的表面作为光电子的受体并且由氮化物构成,欧姆电极层形成在第一绝缘层的外围表面部分上 击穿电压控制层的受体。 当基于外延生长均匀地控制载流子倍增层中的掺杂剂浓度分布时,改善了入射到半导体器件的接收器上的不同位置处的光电子的雪崩倍增增益的均匀性,从而大大增加了能量分辨率 。
    • 5. 发明公开
    • Verfahren und Detektoreinrichtung zur elektronischen positionsbezogenen Erfassung von Strahlung
    • 用于电子位置相关检测辐射的方法和检测器装置
    • EP0698910A3
    • 1996-03-13
    • EP95113181.2
    • 1995-08-22
    • ROENTDEK-HANDELS GmbHLITEF GmbH
    • Schmidt-Böcking, Horst, Prof. Dr.
    • H01J43/12H01J43/04
    • H01J31/49H01J2231/50021H01J2231/50031H01J2231/50068H01J2231/5016
    • Das Verfahren und die Einrichtung zur Bildsignalauskopplung bei positionsgebenden Hochvakuum-Detektoreinrichtungen für elektromagnetische Strahlungsquanten oder Teilchen, die im Falle elektromagnetischer Strahlung über eine Photo-Elektronen-Konverterschicht (4) und im Falle von Teilchenstrahlung direkt über einen Elektronen-Vervielfacher (3) als Elektronenlawine (8) auf eine ortsauflösende Anodenstruktur (2) auftreffen, zeichnen sich erfindungsgemäß dadurch aus, daß die Elektronenlawine (8) zunächst innerhalb des Vakuums (7) anodenseitig durch eine hochohmige leitende Halbleiter-Dünnschicht (1) kurzzeitig gesammelt und durch den Glasboden (Gegensubstrat 6) der Detektoreinrichtung von der Außenseite aus als Bildladung mittels einer niederohmigen, für eine Ortsbestimmung geeignet strukturierte Anodenschicht (2) kapazitiv ausgelesen wird.
      Diese kapazitive Auskopplung ermöglicht eine hohe Ortsauflösung, wenn die inneren Widerstände von Ladungssammelschicht (1) einerseits und Auslese-Anodenschicht (2) andererseits optimal zueinander angepaßt werden. Die erfindungsgemäße Art der Auskopplung benötigt im Vakuum (7) nur eine einfache hochohmige Monoschicht mit einer einzigen Spannungskontaktierung (11). Die ortsauflösende Anodenstruktur (2) außerhalb des Vakuums (7) kann den Anwenderwünschen entsprechend modifiziert und beliebig ausgetauscht werden, so daß die Ortsauflösung individuell anpaßbar ist.
    • 在位置为图像信号提取的方法和装置限定一个高真空检测器装置,用于在通过光 - 电子转换器层(4)的电磁辐射的情况下,电磁辐射量子或颗粒和在颗粒的情况下直接通过电子倍增器(3)作为电子雪崩( 8)以空间分辨的阳极结构(2)撞击,根据本发明的特征在于,其特征在于所述电子雪崩(8)中,首先(由高电阻导电半导体薄膜收集的真空7)阳极短期内(1)和(透过玻璃地板相对基板6 )通过低阻抗阳极层(2)作为图像电荷从外部电容读取,所述低阻抗阳极层(2)被适当地构造用于位置确定。 如果一方面电荷收集层(1)和另一方面读出阳极层(2)的内阻彼此最佳匹配,则该电容耦合能够实现高空间分辨率。 根据本发明的去耦类型在真空(7)中仅需要具有单个电压触点(11)的单个高阻抗单层。 真空(7)外部的空间分辨阳极结构(2)可根据用户的意愿进行修改并根据需要进行交换,使得空间分辨率可单独适应。
    • 7. 发明公开
    • PHOTOMULTIPLIER
    • 光电倍增
    • EP1921661A1
    • 2008-05-14
    • EP06756885.7
    • 2006-06-01
    • HAMAMATSU PHOTONICS K. K.
    • KYUSHIMA, HiroyukiSHIMOI, HidekiSUGIYAMA, HiroyukiKISHITA, HitoshiKIMURA, SuenoriMASUDA, YujiOHMURA, Takayuki
    • H01J43/24H01J43/12
    • H01J43/06
    • The present invention relates to a photomultiplier having a fine configuration capable of realizing stable detection accuracy. The photomultiplier has a housing whose inside is maintained vacuum, and a photocathode, an electron-multiplier section, and an anode are disposed in the housing. In particular, one or more control electrodes disposed in an internal space of the housing which surrounds the electron-multiplier section and the anode are electrically connected via one or more connection parts extending from an electron emission terminal of the electron-multiplier section. In this configuration, due to a voltage, instead of the applying between an electron entrance terminal and the electron emission terminal of the electron-multiplier section, being applied between the electron entrance terminal and the control electrodes, an electric potential gradient which is increased gradually from the photocathode side toward the anode side is formed in the electron-multiplier section, and a sufficient electric potential difference is provided between the electron emission terminal of the electron-multiplier section and the anode, which makes it possible to obtain stable detection accuracy.
    • 本发明涉及具有能够实现稳定的检测精度的精细配置的光电倍增器。 光电倍增管具有其内部保持真空的外壳,并且光电阴极,电子倍增器部分和阳极设置在外壳中。 特别地,设置在围绕电子倍增器部分和阳极的外壳的内部空间中的一个或多个控制电极经由从电子倍增器部分的电子发射端子延伸的一个或多个连接部分电连接。 在该结构中,由于电压,而不是施加在电子入射端子和电子倍增器部分的电子发射端子之间,施加在电子入射端子和控制电极之间,电势梯度逐渐增加 从光电阴极侧向阳极侧形成电子倍增部,在电子倍增部的电子发射端子与阳极之间形成足够的电位差,可以得到稳定的检测精度。
    • 8. 发明授权
    • PHOTOMULTIPLIER
    • 光电倍增
    • EP1318540B1
    • 2005-09-07
    • EP01951937.0
    • 2001-07-19
    • HAMAMATSU PHOTONICS K. K.
    • ISHIZU, Tomohiro, Hamamatsu Photonics K.K.KIMURA, Suenori
    • H01J43/12
    • H01J43/12
    • A photomultiplier excellent in vibration resistance and having an anode with good pulse linearity characteristic. The photomultiplier has a mesh anode (A) composed of an anode frame (A11) and a mesh electrode (A12) supported and surrounded by the anode frame (A11). The central portion of one long side (A11B) of the anode frame (A11) serves as an electron converging part (F). The inner side of the anode frame (A11) swells toward the inner part of the anode (A), more from the middle of the long side (A11B) toward the corners of the anode frame (A11) along the long side (A11B), and therefore the thickness of the anode frame (A11) increases from the middle of the long side (A11) to the corners along the long side (A11B).
    • 一种光电倍增管,具有优良的抗振性,并具有良好的脉冲线性特性的阳极。 光电倍增管具有由阳极框架(A11)和由阳极框架(A11)支撑和包围的网格电极(A12)组成的网格阳极(A)。 阳极框架(A11)的一个长边(A11B)的中央部分用作电子会聚部分(F)。 阳极框架(A11)的内侧沿着长边(A11B)从长边(A11B)的中间朝向阳极框(A11)的角部向阳极(A)的内部膨胀, 因此阳极框架(A11)的厚度从长边(A11)的中间到长边(A11B)的角部增大。
    • 10. 发明公开
    • Position sensitive photomultiplier
    • 位置敏感的光电倍增管
    • EP0698911A3
    • 1996-03-13
    • EP95305888.0
    • 1995-08-23
    • HAMAMATSU PHOTONICS K.K.
    • Kyushima, Hiroyuki, c/o Hamamatsu Photonics K.K.Kawano, Eiichiro, c/o Hamamatsu Photonics K.K.Mizuide, Masuya, c/o Hamamatsu Photonics K.K.Yokota, Hiroto, c/o Hamamatsu Photonics K.K.
    • H01J43/12H01J43/04
    • H01J43/12H01J43/045
    • This invention relates to a photomultiplier for detecting the incident position of a plane of incidence, where a weak light beam is reached and to a photomultiplier having a structure for minimizing crosstalk near the incident position of the weak light beam to improve the precision of the position resolving power. Particularly, the anode of this photomultiplier, which extracts the incident position of the incident weak light as an electrical signal, is constituted by a first anode component for detecting the incident position of the incident plane in the X direction and a second anode component for detecting the incident position of the incident plane in the Y direction. The first and second anode components have flat surfaces. These flat surfaces cause the first and second anode components to capture secondary electrons emitted from a dynode in correspondence with the incident position of the weak light beam, at a position closer to the emission position. The photomultiplier detects the incident position of the weak light beam at a higher resolving power while minimizing the crosstalk.
    • 本发明涉及一种用于检测到达弱光束的入射平面的入射位置的光电倍增器和一种具有用于使弱光束的入射位置附近的串扰最小化的结构的光电倍增器,以提高位置的精确度 解决权力。 特别是,将入射的弱光的入射位置作为电信号提取出来的该光电倍增管的阳极由用于检测入射面在X方向上的入射位置的第一阳极部件和用于检测入射面的第二阳极部件 入射平面在Y方向上的入射位置。 第一和第二阳极部件具有平坦的表面。 这些平坦表面使得第一和第二阳极组件在与较弱光束的入射位置相对应的位置处在较接近发射位置的位置处捕获从倍增极发射的二次电子。 光电倍增管以较高的分辨率检测弱光束的入射位置,同时最小化串扰。