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1. 发明公开

EP0714117A2 Photomultiplier 失效
标题翻译：光电倍增管
公开(公告)号：EP0714117A2
公开(公告)日：1996-05-29
申请号：EP95308117.1
申请日：1995-11-14
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Suyama, Motohiro , Muramatsu, Masaharu , Oishi, Makoto , Ishikawa, Yoshitaka , Yamamoto, Koei
IPC分类号： H01J43/12 , H01J43/10 , H01J1/32
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
摘要： In a photomultiplier of the present invention, a semiconductor device (60) arranged in an envelope (20) to oppose a photocathode (40) is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by epitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
摘要翻译：在本发明的光电倍增管中，布置在与光电阴极（40）相对的封套（20）中的半导体器件（60）由第一导电类型的半导体衬底，第二导电类型的载流子倍增层从通过外延生长在半导体衬底上形成的第一导电类型，形成在载流子倍增层上且具有比载流子倍增层高的掺杂浓度的第二导电类型的击穿电压控制层，第一绝缘层，形成在击穿电压控制层和载流子倍增层上，同时部分地暴露击穿电压控制层的表面作为光电子的受体并且由氮化物构成，欧姆电极层形成在第一绝缘层的外围表面部分上击穿电压控制层的受体。当基于外延生长均匀地控制载流子倍增层中的掺杂剂浓度分布时，改善了入射到半导体器件的接收器上的不同位置处的光电子的雪崩倍增增益的均匀性，从而大大增加了能量分辨率。

2. 发明公开

EP0883189A1 Back illuminated photodetector and method of fabricating the same 失效
标题翻译： RückbeleuchteterFotodetektor und Methode zu dessen Herstellung
公开(公告)号：EP0883189A1
公开(公告)日：1998-12-09
申请号：EP98304465.2
申请日：1998-06-05
申请人： Hamamatsu Photonics K.K.
发明人： Akahori, Hiroshi , Muramatsu, Masaharu
IPC分类号： H01L27/148
CPC分类号： H01L31/02002 , H01L27/1464 , H01L27/14806 , H01L27/14831 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： An n-type buried channel (3), a silicon oxide film (4), a poly-Si transfer electrode (5), a PSG film (6) as an insulating interlayer, an aluminum interconnection (7), and a silicon nitride film (8) are stacked on one surface of a p-type silicon substrate (1) to form a CCD (2). The other surface is protected by a silicon oxide film (9), and a p + -type accumulation layer (10) is formed on the silicon oxide film, thereby forming a back-illuminated CCD on which light, electromagnetic wave, charged particles, or the like is incident through the other surface. A glass substrate (13) is anodically bonded on the CCD via an insulating polyimide film (11), and a conductive aluminum (12) film. Therefore, the mechanical strength of the device is kept high, and the sensitivity can be increased by thinning the silicon substrate.
摘要翻译： n型掩埋沟道（3），氧化硅膜（4），多晶硅转移电极（5），作为绝缘中间层的PSG膜（6），铝互连（7）和氮化硅膜（8）堆叠在p型硅衬底（1）的一个表面上以形成CCD（2）。另一个表面由氧化硅膜（9）保护，并且在氧化硅膜上形成ap +型蓄积层（10），从而形成背光照明的CCD，其上装有光，电磁波，带电粒子，或类似物通过另一表面入射。玻璃基板（13）通过绝缘聚酰亚胺膜（11）和导电铝（12）膜阳极结合在CCD上。因此，器件的机械强度保持较高，并且可以通过使硅衬底变薄来增加灵敏度。

3. 发明公开

EP0714117A3 Photomultiplier 失效
标题翻译：光电倍增管
公开(公告)号：EP0714117A3
公开(公告)日：1998-03-04
申请号：EP95308117.1
申请日：1995-11-14
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Suyama, Motohiro , Muramatsu, Masaharu , Oishi, Makoto , Ishikawa, Yoshitaka , Yamamoto, Koei
IPC分类号： H01J43/12 , H01J43/10 , H01J1/32
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
摘要： In a photomultiplier of the present invention, a semiconductor device (60) arranged in an envelope (20) to oppose a photocathode (40) is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by epitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.

4. 发明公开

EP1672695A1 SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING THE SAME 有权
标题翻译： HERSBLEITERBAUEMENT UND HERSTELLUNGSPROZESSDAFÜR
公开(公告)号：EP1672695A1
公开(公告)日：2006-06-21
申请号：EP04788124.8
申请日：2004-09-24
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Kobayashi, Hiroya , Muramatsu, Masaharu
IPC分类号： H01L27/14 , H01L31/02 , H01L21/56 , H01L21/60
CPC分类号： H01L21/563 , H01L24/29 , H01L24/81 , H01L24/90 , H01L27/14636 , H01L27/1464 , H01L27/14806 , H01L2224/73203 , H01L2224/81203 , H01L2224/81801 , H01L2224/83191 , H01L2224/83194 , H01L2924/01004 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01058 , H01L2924/01082 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3512 , H01L2924/00
摘要： With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 to reinforce the bonding strengths of conductive bumps 30. This resin 32 is a resin sheet that has been formed in advance so as to surround a periphery of a gap between thinned portion 14 and wiring substrate 20 except for portions of the periphery.
摘要翻译：利用该半导体装置，能够防止半导体基板的薄壁化部分的变形和破裂，从而能够对光检测单元进行高精度聚焦，并且保持光检测单元的高灵敏度的均匀性和稳定性。半导体器件1具有半导体衬底10，布线衬底20，导电凸块30和树脂32.半导体衬底10上形成CCD 12和薄化部分14.半导体衬底10的电极16通过导电凸块 30连接到布线基板20的电极22.绝缘树脂32填充薄部14的外边缘15与布线基板20之间的间隙，以增强导电凸块30的接合强度。该树脂32是预先形成的树脂片以便围绕除了周边部分之间的间隔部分14和布线基板20之间的间隙的周边。

5. 发明授权

EP0883189B1 Back illuminated photodetector and method of fabricating the same 失效
标题翻译：背照其制备光电检测器和方法
公开(公告)号：EP0883189B1
公开(公告)日：2004-08-18
申请号：EP98304465.2
申请日：1998-06-05
申请人： Hamamatsu Photonics K.K.
发明人： Akahori, Hiroshi , Muramatsu, Masaharu
IPC分类号： H01L27/148
CPC分类号： H01L31/02002 , H01L27/1464 , H01L27/14806 , H01L27/14831 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/00

6. 发明授权

EP1672695B1 SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING THE SAME 有权
标题翻译：半导体部件及其制造工艺
公开(公告)号：EP1672695B1
公开(公告)日：2014-07-23
申请号：EP04788124.8
申请日：2004-09-24
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Kobayashi, Hiroya , Muramatsu, Masaharu
IPC分类号： H01L27/146 , H01L21/56 , H01L23/00 , H01L27/148
CPC分类号： H01L21/563 , H01L24/29 , H01L24/81 , H01L24/90 , H01L27/14636 , H01L27/1464 , H01L27/14806 , H01L2224/73203 , H01L2224/81203 , H01L2224/81801 , H01L2224/83191 , H01L2224/83194 , H01L2924/01004 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01058 , H01L2924/01082 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3512 , H01L2924/00

7. 发明授权

EP0836231B1 Method of making a back irradiation type light-receiving device 失效
标题翻译：一种用于制备光敏组分与辐射入射rückseitem过程
公开(公告)号：EP0836231B1
公开(公告)日：2007-03-21
申请号：EP97308026.0
申请日：1997-10-10
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Muramatsu, Masaharu , Akahori, Hiroshi
IPC分类号： H01L27/148 , H01L21/82 , H01L31/02
CPC分类号： H01L31/022408 , H01L31/1125

8. 发明授权

EP0714117B1 Photomultiplier 失效
标题翻译：光电倍增管
公开(公告)号：EP0714117B1
公开(公告)日：2002-02-06
申请号：EP95308117.1
申请日：1995-11-14
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Suyama, Motohiro , Muramatsu, Masaharu , Oishi, Makoto , Ishikawa, Yoshitaka , Yamamoto, Koei
IPC分类号： H01J43/12 , H01J43/10 , H01J1/32
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12

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