专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3636806A1 SILICON-BASED MELT COMPOSITION AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL USING SAME 有权
公开(公告)号：EP3636806A1
公开(公告)日：2020-04-15
申请号：EP19807632.5
申请日：2019-05-22
申请人： LG CHEM, LTD.
发明人： LEE, Horim , KIM, Junghwan , CHUNG, Chanyeup , KO, Jung Min
IPC分类号： C30B29/36 , C30B15/36 , C30B15/14
摘要： A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1.

[Formula 1] Si a Y b Fe c

In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is
equal to or greater than 0.1 and equal to or less than 0.2.

2. 发明授权

EP1498517B1 METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL 有权
标题翻译：用于生产单晶硅，单晶硅对硅晶片
公开(公告)号：EP1498517B1
公开(公告)日：2016-08-31
申请号：EP03719172.3
申请日：2003-04-23
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： Fusegawa, I. Shirakawa R&D Shin-Etsu Hantodai Ltd , Okuni,S. Shirakawa R & D Shin-Etsu Handotai Co Ltd , Mitamura,N. Shirakawa R & D Shin-Etsu Handotai Ltd , Ohta, T. Shirakawa R & D Shin-Etsu Handotai Co.Ltd , Katuoka, N. Shirakawa R & D Shin-Etsu Handotai Ltd
IPC分类号： C30B29/06 , C30B15/36 , C30B15/22
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032

3. 发明公开

EP2933359A1 METHOD FOR GROWING A BETA-GA2O3 SINGLE CRYSTAL 有权转让
标题翻译： VERFAHREN ZURZÜCHTUNGEINES BETA-GA203-EINKRISTALLS
公开(公告)号：EP2933359A1
公开(公告)日：2015-10-21
申请号：EP13853138.9
申请日：2013-10-09
申请人： Tamura Corporation , Koha Co., Ltd.
发明人： WATANABE, Shinya , WAKIMOTO, Daiki , IIZUKA, Kazuyuki , KOSHI, Kimiyoshi , MASUI, Takekazu
IPC分类号： C30B29/16 , C30B15/34 , C30B15/36
摘要： Provided is a method for growing a β-Ga 2 O 3 single crystal, which enables the production of a plate-like β-Ga 2 O 3 single crystal having high crystal quality. In one embodiment, a method for growing a β-Ga 2 O 3 single crystal employing an EFG method is provided, said method comprising the steps of: bringing a plate-like seed crystal (20) into contact with a Ga203 melt (12), wherein the plate-like seed crystal (20) comprises a β-Ga 2 O 3 single crystal having a defect density of 5x10 5 /cm 2 or less in the whole region; and pulling up the seed crystal (20) to grow a β-Ga 2 O 3 single crystal (25).
摘要翻译：提供一种生长²-Ga 2 O 3单晶的方法，其能够生产具有高晶体质量的板状²-Ga 2 O 3单晶。在一个实施方案中，提供了使用EFG方法生长2-Ga 2 O 3单晶的方法，所述方法包括以下步骤：使板状晶种（20）与Ga 2 O 3熔体（12）接触，其特征在于，所述板状晶种（20）包括在整个区域中缺陷密度为5×10 5 / cm 2以下的ζ-Ga 2 O 3单晶; 并拉起晶种（20）以生长2-Ga 2 O 3单晶（25）。

4. 发明公开

EP1498517A4 METHOD FOR PRODUCING SILICON SINGLE CRYSTAL AND, SILICON SINGLE CRYSTAL AND SILICON WAFER 有权
标题翻译：用于生产单晶硅，单晶硅对硅晶片
公开(公告)号：EP1498517A4
公开(公告)日：2008-09-17
申请号：EP03719172
申请日：2003-04-23
申请人： SHINETSU HANDOTAI KK
发明人： FUSEGAWA I , OKUNI S , MITAMURA N , OHTA T , KATUOKA N
IPC分类号： C30B29/06 , C30B15/00 , C30B15/22 , C30B15/36
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： A method for producing a silicon single crystal by the Czochralski method not utilizing the Dash Necking method, which comprises using a seed crystal having a shape wherein an end portion is pointed or a part of a pointed end portion is cut off and the angle of such an end portion is 28˚ or less, stopping the fall of the seed crystal just before the contact of the end portion with a silicon melt, elevating the temperature of the seed crystal, contacting the end portion with the silicon melt, allowing the seed crystal to sink in the silicon melt down to a desired diameter, and, in pulling up a silicon single crystal thereafter, maintaining the variation of the temperature of the surface of the silicon melt at a range of ± 5˚ C or less at least until the start of pulling up the seed single crystal. The method allows, in the growth of a silicon single crystal by the Czochralski method not utilizing the Dash Necking method, the enhancement of probability of success in the growth of a single crystal with no dislocation and also the growth of a silicon single crystal which has a crystal orientation of and also is of great diameter and high weight, for example, has a diameter of a constant diameter portion of greater than 200 mm.

5. 发明授权

EP1132503B1 Process and apparatus for producing oxide single crystals 有权
标题翻译：用于生产氧化物单晶的方法和设备
公开(公告)号：EP1132503B1
公开(公告)日：2006-05-17
申请号：EP01301838.7
申请日：2001-02-28
申请人： NGK INSULATORS, LTD.
发明人： Imai, Katsuhiro , Honda, Akihiko , Imaeda, Minoru
IPC分类号： C30B15/08 , C30B15/36 , C30B29/30
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A process is disclosed for producing an oxide single crystal, comprising the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis .

6. 发明公开

EP1132503A3 Process and apparatus for producing oxide single crystals 有权
标题翻译：用于生产氧化物单晶的方法和设备
公开(公告)号：EP1132503A3
公开(公告)日：2004-04-21
申请号：EP01301838.7
申请日：2001-02-28
申请人： NGK INSULATORS, LTD.
发明人： Imai, Katsuhiro , Honda, Akihiko , Imaeda, Minoru
IPC分类号： C30B15/08 , C30B15/36 , C30B29/30
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A process is disclosed for producing an oxide single crystal, comprising the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis .

7. 发明授权

EP0930381B1 Method of producing a silicon monocrystal 有权
标题翻译：一种用于制造硅单晶的方法
公开(公告)号：EP0930381B1
公开(公告)日：2003-11-05
申请号：EP99300124.7
申请日：1999-01-07
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Iino, Eiichi, c/o Isobe R & D Center
IPC分类号： C30B15/36 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/36

8. 发明公开

EP1029956A4 SEED CRYSTAL AND METHOD FOR PREPARING SINGLE CRYSTAL 审中-公开
标题翻译：籽晶及其制造方法单晶
公开(公告)号：EP1029956A4
公开(公告)日：2002-05-08
申请号：EP99933236
申请日：1999-08-03
申请人： SHINETSU HANDOTAI KK
发明人： IINO EIICHI
IPC分类号： C30B15/36 , C30B29/06
CPC分类号： C30B15/36 , Y10S117/911
摘要： A seed crystal for use in preparing a single crystal by Czochralsky method, characterized in that S (mm ), which represents the cross-sectional area of a seed crystal, and W (kg), which represents the weight of a single crystal to be drawn up, satisfy the relationship: S > W, and a method for preparing a single crystal according to Czochralsky method, characterized in that the single crystal is drawn up in a manner such that S (mm ), which represents the cross-sectional area of a seed crystal, and W (kg), which represents the weight of a single crystal to be drawn up, satisfy the relationship: S > W. This seed crystal has a strength sufficient not to be broken even when used upon preparation of a single crystal of high weight.

9. 发明公开

EP1029956A1 SEED CRYSTAL AND METHOD FOR PREPARING SINGLE CRYSTAL 审中-公开
标题翻译：意大利语VERFAHREN ZUR HERSTELLUNG VON EINKRISTALLEN
公开(公告)号：EP1029956A1
公开(公告)日：2000-08-23
申请号：EP99933236.4
申请日：1999-08-03
申请人： Shin-Etsu Handotai Co., Ltd
发明人： IINO, Eiichi
IPC分类号： C30B15/36
CPC分类号： C30B15/36 , Y10S117/911
摘要： There is provided a seed crystal having a strength that the seed crystal is not broken even when the heavy single crystal is produced. The seed crystal is a seed crystal used for producing a single crystal according to Czochralski method wherein a relation between a sectional area of the seed crystal S (mm 2 ) and a weight W (kg) of the single crystal to be pulled is represented by the formula: S>W. The single crystal is produced using the seed crystal. Furthermore, the single crystal is pulled with conforming a sectional area S (mm 2 ) of a seed crystal and a weight W (kg) of a single crystal to be pulled to the formula: S>W.
摘要翻译：提供具有即使产生重单晶也不会破碎晶种的晶种的晶种。晶种是用于根据切克劳斯基法制造单晶的晶种，其中晶种S（mm 2）的截面积与待拉出的单晶的重量W（kg）之间的关系为由下式表示：S> W。使用晶种生产单晶。此外，将晶种的截面积S（mm 2）和待拉出的单晶的重量W（kg）与S> W相符合，拉伸单晶。

10. 发明公开

EP0795632A1 Method of manufacturing silicon monocrystal, and seed crystal used in the method 失效
标题翻译： Verfahren zur Herstellung Silizium-Einkristallen und Impfkristalldafür
公开(公告)号：EP0795632A1
公开(公告)日：1997-09-17
申请号：EP97301661.1
申请日：1997-03-12
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Murai, Toshinari , Nagai, Naoki
IPC分类号： C30B15/36 , C30B29/06
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902
摘要： In a method of manufacturing a silicon monocrystal using the Czochralski method, a seed crystal is brought into contact with silicon melt and is then pulled such that after a neck portion is formed, a silicon monocrystal is grown below the neck portion. The crystal has a hollow portion which has an opening in the contact surface of the seed crystal to be brought into contact with the silicon melt. Alternatively, the seed crystal has a hollow portion which, upon being brought into contact with the silicon melt, will have an opening in the contact surface of the seed crystal to be brought into contact with the silicon melt. Use of such seed crystals makes it possible to increase the strength of the neck portion and to pull a heavy and long silicon monocrystal having a large diameter.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，使晶种与硅熔体接触，然后被拉动，使得在形成颈部之后，在颈部下方生长硅单晶。晶体具有中空部分，其在晶种的接触表面中具有与硅熔体接触的开口。或者，晶种具有中空部分，其在与硅熔体接触时将在晶种的接触表面中具有与硅熔体接触的开口。使用这种晶种可以提高颈部的强度并拉出具有大直径的重的和长的硅单晶。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式