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1. 发明授权

EP2933359B1 METHOD FOR GROWING A BETA-GA2O3-BASED SINGLE CRYSTAL 有权转让
公开(公告)号：EP2933359B1
公开(公告)日：2020-03-11
申请号：EP13853138.9
申请日：2013-10-09
申请人： Tamura Corporation , Koha Co., Ltd.
发明人： WATANABE, Shinya , WAKIMOTO, Daiki , IIZUKA, Kazuyuki , KOSHI, Kimiyoshi , MASUI, Takekazu
IPC分类号： C30B29/16 , C30B15/34 , C30B15/36

2. 发明公开

EP3561158A2 METHOD FOR GROWING SINGLE CRYSTAL SILICON CARBIDE INGOT HAVING LARGE DIAMETER 审中-公开
公开(公告)号：EP3561158A2
公开(公告)日：2019-10-30
申请号：EP17882910.7
申请日：2017-12-20
申请人： SKC Co., Ltd.
发明人： CHOI, Jung Woo , KU, Kap-Ryeol , KIM, Jung-Gyu
IPC分类号： C30B15/36 , C30B29/06 , C30B29/36 , C30B15/14 , C30B15/02 , C30B25/08 , C30B25/14 , C30B25/22 , C30B15/32
摘要： A method in which a carbonaceous protective film is formed on a rear surface of a single crystal SiC seed, the seed is placed in a reaction container without adhesion, and then single crystal SiC is grown from a SiC raw material on a front surface of the seed allows the seed to grow to a single crystal ingot having a large diameter since the absence of adhesion of the seed to a holder prevents the generation of warps or cracks attributed to a difference in thermal expansion coefficient between the seed and the holder during heating.

3. 发明公开

EP2650406A1 Ribbon crystal string for increasing wafer yield 审中-公开
标题翻译： BandkristallstrangfürerhöhtenWaferertrag
公开(公告)号：EP2650406A1
公开(公告)日：2013-10-16
申请号：EP13175698.3
申请日：2008-08-29
申请人： Max Era, Inc.
发明人： Reitsma, Scott
IPC分类号： C30B15/34 , C30B15/36 , C30B35/00 , H01L31/18 , C04B35/628
CPC分类号： C30B15/34 , C04B35/62849 , C04B35/62852 , C04B35/62863 , C04B35/62868 , C04B35/62871 , C04B35/62873 , C04B35/62894 , C04B2235/5248 , C30B15/36 , C30B35/00 , Y10T117/1032 , Y10T428/24479 , Y10T428/24628 , Y10T428/2918 , Y10T428/2929 , Y10T428/2942 , Y10T428/2962 , Y10T428/30
摘要： A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally concave cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body.
摘要翻译：丝带水晶具有宽度尺寸的主体和嵌入在体内的弦。弦具有大致凹形的横截面形状。弦的横截面具有与带状晶体的宽度尺寸分叉的大致纵向轴线。

4. 发明授权

EP1897976B1 Method for producing silicon single crystal and method for producing silicon wafer 有权
标题翻译：一种用于生产硅单晶和方法，用于制造硅晶片工艺
公开(公告)号：EP1897976B1
公开(公告)日：2013-04-17
申请号：EP07017323.2
申请日：2007-09-04
申请人： SUMCO Corporation
发明人： Inami, Shuichi , Inoue, Kuniharu , Moroishi, Manabu , Fukagawa, Tsuguya , Kusaba, Nobuhiro
IPC分类号： C30B15/36 , C30B29/06
CPC分类号： C30B29/06 , C30B15/36

5. 发明公开

EP1897976A3 Method for producing silicon single crystal and method for producing silicon wafer 有权
标题翻译：一种用于生产硅单晶及其制造方法在硅晶片过程
公开(公告)号：EP1897976A3
公开(公告)日：2011-01-05
申请号：EP07017323.2
申请日：2007-09-04
申请人： SUMCO Corporation
发明人： Inami, Shuichi , Inoue, Kuniharu , Moroishi, Manabu , Fukagawa, Tsuguya , Kusaba, Nobuhiro
IPC分类号： C30B15/36 , C30B29/06
CPC分类号： C30B29/06 , C30B15/36
摘要： A method for producing a low-resistivity silicon single crystal in which a silicon wafer having a crystal axis orientation [110] can be obtained and dislocations are sufficiently eliminated, and a method for producing a low-resistance silicon wafer having the crystal axis orientation [110] from the silicon single crystal obtained by the low-resistivity silicon single crystal production method. In this Czochralski method, the silicon single crystal whose center axis is inclined by 0.6° to 10° relative to a crystal axis [110] is grown by dipping a silicon seed crystal in a silicon melt. Boron as a dopant is added in the silicon melt so that a boron concentration ranges from 6.25×10 17 to 2.5×10 20 atoms/cm3, a center axis of the silicon seed crystal is inclined by 0.6° to 10° relative to the crystal axis [110], and the silicon seed crystal has the substantially same boron concentration as that of a neck portion formed in the single crystal grown from the silicon melt.

6. 发明公开

EP1794353A4 SINGLE CRYSTAL WIRE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译： EINKRISTALLDRAHT及其制造方法
公开(公告)号：EP1794353A4
公开(公告)日：2010-04-14
申请号：EP05808344
申请日：2005-09-15
申请人： PUSAN NAT UNIV IND COOP FOUND
发明人： JEONG SE YOUNG , CHO CHAE RYONG , PARK SANG EON , KIM SUNG KYU
IPC分类号： C30B15/00 , C22B11/02 , C30B11/00 , C30B11/14 , C30B15/02 , C30B15/36 , C30B29/02 , C30B29/62
CPC分类号： C30B15/00 , C22B11/02 , C30B11/00 , C30B11/14 , C30B15/36 , C30B29/02 , C30B29/62

7. 发明授权

EP1321544B1 Seed crystal for production of slicon single crystal and method for production of silicon single crystal 有权
标题翻译：晶种用于生产硅和工艺生产单晶硅的
公开(公告)号：EP1321544B1
公开(公告)日：2006-03-22
申请号：EP02026984.1
申请日：2002-12-05
申请人： Siltronic AG
发明人： Tanaka, Masahiro , Kishida, Yutaka , Tamaki, Teruyuki , Kato, Hideo , Takebayashi, Seiki
IPC分类号： C30B15/00 , C30B29/06 , C30B15/36
CPC分类号： C30B29/06 , C30B15/36

8. 发明公开

EP0949359A1 Process for producing a silicon single crystal by Czochralski method 有权
标题翻译： Verfahren zur Herstellung eines Silizium-Einkristalls手套Czochralski-Verfahren
公开(公告)号：EP0949359A1
公开(公告)日：1999-10-13
申请号：EP99302272.2
申请日：1999-03-24
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Iino, Eiichi, Shin-Etsu Handotai Company Ltd.
IPC分类号： C30B15/36 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/36
摘要： There is disclosed a method for producing a silicon single crystal which comprises preparing a silicon seed crystal having a sharp tip end, and melting down a part of the silicon seed crystal from a tip end to a position having a predetermined thickness, followed by performing a necking operation to form a tapered necking part and a neck portion, and subsequently pulling a single crystal ingot after increasing a diameter, characterized in that said part to be melted down is a part from a tip end to a position in which a diameter A is 1.1 to 2 times the diameter B of the neck portion to be formed; said necking operation is then performed in such a way that a tapered necking part in the shape of a cone is formed at an early stage thereof by pulling a crystal with gradually decreasing a diameter to a minimum diameter of 5 mm or more, and then a neck portion is formed; and subsequently the single crystal ingot is pulled after being increased in a diameter.
There can be provided a method of producing a silicon single crystal ingot which enables growing of single crystal ingot without lowering a rate of success in making a crystal dislocation free in the case that a thick neck is formed, and thereby improves productivity of a heavy silicon single crystal having a large diameter.
摘要翻译：公开了一种制造硅单晶的方法，其包括制备具有尖端尖端的硅晶种，并将一部分硅晶种从尖端熔化到具有预定厚度的位置，然后进行缩颈操作以形成锥形颈缩部分和颈部，随后在增加直径之后拉动单晶锭，其特征在于，所述要熔化的部分是从尖端到直径A为要形成的颈部直径B的1.1〜2倍; 然后进行颈缩操作，使得通过将直径逐渐减小至最小直径为5mm以上的晶体，在其早期形成锥体形状的锥形颈缩部，然后将颈部形成; 然后在直径增加之后拉出单晶锭。可以提供一种制造单晶锭的方法，其能够在形成厚的颈部的情况下不降低成形时的成形率，从而提高重质硅的生产率，从而能够生长单晶锭具有大直径的单晶。

9. 发明公开

EP3636806A1 SILICON-BASED MELT COMPOSITION AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL USING SAME 有权
公开(公告)号：EP3636806A1
公开(公告)日：2020-04-15
申请号：EP19807632.5
申请日：2019-05-22
申请人： LG CHEM, LTD.
发明人： LEE, Horim , KIM, Junghwan , CHUNG, Chanyeup , KO, Jung Min
IPC分类号： C30B29/36 , C30B15/36 , C30B15/14
摘要： A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1.

[Formula 1] Si a Y b Fe c

In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is
equal to or greater than 0.1 and equal to or less than 0.2.

10. 发明授权

EP1498517B1 METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL 有权
标题翻译：用于生产单晶硅，单晶硅对硅晶片
公开(公告)号：EP1498517B1
公开(公告)日：2016-08-31
申请号：EP03719172.3
申请日：2003-04-23
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： Fusegawa, I. Shirakawa R&D Shin-Etsu Hantodai Ltd , Okuni,S. Shirakawa R & D Shin-Etsu Handotai Co Ltd , Mitamura,N. Shirakawa R & D Shin-Etsu Handotai Ltd , Ohta, T. Shirakawa R & D Shin-Etsu Handotai Co.Ltd , Katuoka, N. Shirakawa R & D Shin-Etsu Handotai Ltd
IPC分类号： C30B29/06 , C30B15/36 , C30B15/22
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032

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