基本信息:
- 专利标题： Process and apparatus for producing oxide single crystals
- 专利标题（中）：用于生产氧化物单晶的方法和设备
- 申请号：EP01301838.7 申请日：2001-02-28
- 公开(公告)号：EP1132503B1 公开(公告)日：2006-05-17
- 发明人： Imai, Katsuhiro , Honda, Akihiko , Imaeda, Minoru
- 申请人： NGK INSULATORS, LTD.
- 申请人地址： 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Pref. 467-8530 JP
- 专利权人： NGK INSULATORS, LTD.
- 当前专利权人： NGK INSULATORS, LTD.
- 当前专利权人地址： 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Pref. 467-8530 JP
- 代理机构： Paget, Hugh Charles Edward
- 优先权： JP2000058345 20000303
- 主分类号： C30B15/08
- IPC分类号： C30B15/08 ; C30B15/36 ; C30B29/30
摘要：
A process is disclosed for producing an oxide single crystal, comprising the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis .
公开/授权文献:
- EP1132503A3 Process and apparatus for producing oxide single crystals 公开/授权日：2004-04-21