发明公开
EP0795632A1 Method of manufacturing silicon monocrystal, and seed crystal used in the method
失效
基本信息:
- 专利标题： Method of manufacturing silicon monocrystal, and seed crystal used in the method
- 专利标题（中）：Verfahren zur Herstellung Silizium-Einkristallen und Impfkristalldafür
- 申请号：EP97301661.1 申请日：1997-03-12
- 公开(公告)号：EP0795632A1 公开(公告)日：1997-09-17
- 发明人： Murai, Toshinari , Nagai, Naoki
- 申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
- 申请人地址： 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo JP
- 专利权人： SHIN-ETSU HANDOTAI COMPANY LIMITED
- 当前专利权人： SHIN-ETSU HANDOTAI COMPANY LIMITED
- 当前专利权人地址： 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo JP
- 代理机构： Cooper, John
- 优先权： JP87187/96 19960315
- 主分类号： C30B15/36
- IPC分类号： C30B15/36 ; C30B29/06
摘要：
In a method of manufacturing a silicon monocrystal using the Czochralski method, a seed crystal is brought into contact with silicon melt and is then pulled such that after a neck portion is formed, a silicon monocrystal is grown below the neck portion. The crystal has a hollow portion which has an opening in the contact surface of the seed crystal to be brought into contact with the silicon melt. Alternatively, the seed crystal has a hollow portion which, upon being brought into contact with the silicon melt, will have an opening in the contact surface of the seed crystal to be brought into contact with the silicon melt. Use of such seed crystals makes it possible to increase the strength of the neck portion and to pull a heavy and long silicon monocrystal having a large diameter.
摘要（中）：
在使用Czochralski法制造硅单晶的方法中，使晶种与硅熔体接触，然后被拉动，使得在形成颈部之后，在颈部下方生长硅单晶。 晶体具有中空部分，其在晶种的接触表面中具有与硅熔体接触的开口。 或者，晶种具有中空部分，其在与硅熔体接触时将在晶种的接触表面中具有与硅熔体接触的开口。 使用这种晶种可以提高颈部的强度并拉出具有大直径的重的和长的硅单晶。