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1. 发明授权

EP2461334B8 INDUCTOR 有权转让
公开(公告)号：EP2461334B8
公开(公告)日：2014-09-17
申请号：EP10803799.5
申请日：2010-07-19
申请人： Tamura Corporation , Tamura Corporation of China Limited
发明人： SHAO, Geliang , SUZUKI, Atsushi , ZHOU, Jie
IPC分类号： H01F17/04 , H01F27/24
CPC分类号： H01F3/14 , H01F17/04 , H01F2038/026

2. 发明授权

EP2461334B1 INDUCTOR 有权转让
公开(公告)号：EP2461334B1
公开(公告)日：2014-06-18
申请号：EP10803799.5
申请日：2010-07-19
申请人： Tamura Corporation , Tamura Corporation of China Limited
发明人： SHAO, Geliang , SUZUKI, Atsushi , ZHOU, Jie
IPC分类号： H01F17/04 , H01F27/24
CPC分类号： H01F3/14 , H01F17/04 , H01F2038/026

3. 发明公开

EP4404276A1 P-N JUNCTION DIODE 审中-公开
公开(公告)号：EP4404276A1
公开(公告)日：2024-07-24
申请号：EP22869716.5
申请日：2022-08-03
申请人： Tamura Corporation , Novel Crystal Technology, Inc.
发明人： TAKATSUKA, Akio , SASAKI, Kohei
IPC分类号： H01L29/868 , H01L29/201 , H01L29/861
CPC分类号： H01L29/868 , H01L29/201 , H01L29/861
摘要： Provided is a p-n junction diode which can achieve both of the achievement of a low turn-on voltage and the reduction in a leak current even when the p-n junction diode has a simple structure. In one embodiment, a p-n junction diode 1 is provided, which is provided with an n-type semiconductor layer 11 that is composed of a single crystal of an n-type semiconductor having a chemical composition represented by the formula: (GaxAlyIn1-x-y)2O3 (0

4. 发明公开

EP4383315A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER 审中-实审
公开(公告)号：EP4383315A1
公开(公告)日：2024-06-12
申请号：EP22853114.1
申请日：2022-08-03
申请人： Tamura Corporation , Novel Crystal Technology, Inc.
发明人： SASAKI, Kohei , LIN, Chia-Hung
IPC分类号： H01L21/365 , C23C16/40 , C30B25/02 , C30B29/16 , H01L21/20 , H01L29/24
CPC分类号： C23C16/40 , C30B25/02 , C30B29/16 , H01L21/02107 , H01L21/20 , H01L29/24
摘要： Provided is a gallium oxide-based semiconductor substrate configured to allow the formation, by HVPE, of a gallium oxide-based epitaxial film having a small film thickness distribution, a small donor concentration distribution, and a low crystal defect density. Also provided are a semiconductor wafer including the semiconductor substrate and the epitaxial film, and a method for manufacturing the semiconductor wafer. As one embodiment, provided is a semiconductor substrate 10 in which at least one main surface thereof is a crystal growth base surface 11. The semiconductor substrate 10 comprises a single crystal of a gallium oxide-based semiconductor. The growth base surface 11 is the (001) plane. In a continuous region of 70 area% or more of the growth base surface 11, the off angle in the [010] direction is in the range from greater than -0.3° to -0.01°, or in the range from 0.01° to smaller than 0.3°. In said region of the growth base surface 11, the off angle in the [001] direction is in the range from -1° to 1°. The diameter of the semiconductor substrate 10 is 2 inches or more.

5. 发明公开

EP4307326A1 MOLD CORE, REACTOR, AND MOLD CORE MANUFACTURING METHOD 审中-公开
公开(公告)号：EP4307326A1
公开(公告)日：2024-01-17
申请号：EP23184465.5
申请日：2023-07-10
申请人： Tamura Corporation
发明人： KANEKO, Masato , UMAHASHI, Shigeo , SUZUKI, Kotaro
IPC分类号： H01F3/10 , H01F27/255 , H01F27/26 , H01F27/32 , H01F37/00 , H01F41/00 , H01F41/02
摘要： Provided is a mold core, a reactor having the mold core, and a manufacturing method of the mold core in which the leg portion connecting surfaces of the yoke portions are aligned at the same height and gaps are prevented from forming between the end surfaces of the leg portions and the leg portion connecting surfaces. The mold core 2 of the reactor 1 is made of a dust core and includes the yoke cores 41 for connecting a plurality of leg portions 32, and the yoke resins 42 for molding the yoke cores 41 by insert molding. The yoke cores 41 are divided into a plurality of core blocks 5 connected in a row without gaps, and the core blocks 5 include leg-portion-side blocks 61 that are connected to the leg portions 32 one-to-one.

6. 发明公开

EP4203293A1 MODULAR MULTI-LEVEL POWER CONVERTER, AND MODULAR MULTI-LEVEL POWER CONVERSION SYSTEM 审中-实审
公开(公告)号：EP4203293A1
公开(公告)日：2023-06-28
申请号：EP20951347.2
申请日：2020-08-24
申请人： Hitachi Mitsubishi Hydro Corporation , Tamura Corporation
发明人： BANDO, Akira , KIKUI, Takahiko , CHILOSI, Francesco , RESTEGHINI, Silvio
IPC分类号： H02M7/49
摘要： An MMC converter includes three units of two-terminal arms on a P-terminal side, and three units of two-terminal arms on an N-terminal side. An inductive element between the arms on the P-terminal side and the arms on the N-terminal side includes a reactor provided with a UP coil and a UN coil concentrically wound around an iron-core leg, a reactor provided with a VP coil and a VN coil concentrically wound around an iron-core leg, and a reactor provided with a WP coil and a WN coil concentrically wound around an iron-core leg. Each of the coils is wound around in a direction such that a first terminal of the UP coil and a second terminal of the UN coil are connected, a first terminal of the VP coil and a second terminal of the VN coil are connected, and a first terminal of the WP coil and a second terminal of the WN coil are connected, then a second terminal of the UP coil is connected to a first terminal of a UP arm, a first terminal of the UN coil is connected to a second terminal of a UN arm, a second terminal of the VP coil is connected to a first terminal of a VP arm, a first terminal of the VN coil is connected to a second terminal of a VN arm, a second terminal of the WP coil is connected to a first terminal of a WP arm, and a first terminal of the WN coil is connected to a second terminal of a WN arm, and thereby the iron-core legs are excited by a flow-through current from the N terminal to the P terminal.

7. 发明公开

EP4086974A1 TRENCH MOS-TYPE SCHOTTKY DIODE 审中-实审
公开(公告)号：EP4086974A1
公开(公告)日：2022-11-09
申请号：EP22176745.2
申请日：2017-04-20
申请人： Tamura Corporation
发明人： SASAKI, Kohei , HIGASHIWAKI, Masataka
IPC分类号： H01L29/872 , H01L29/24 , H01L29/47 , H01L29/861 , H01L29/868 , H01L29/51 , H01L29/06 , H01L29/40
摘要： A trench MOS-type Schottky diode (1), comprising:
a first semiconductor layer (10) comprising an n-type Ga 2 O 3 -based single crystal containing a Group IV element as a donor;
a second semiconductor layer (11), comprising an n-type Ga 2 O 3 -based single crystal containing a Group IV element as a donor, laminated on the first semiconductor layer (10) and having trenches (12) opened on a surface (17) thereof opposite to the first semiconductor layer (10);
an anode electrode (13) formed on the surface (17) of the second semiconductor layer (11) opposite to the first semiconductor layer (10) and being in Schottky contact with the second semiconductor layer (11);
a cathode electrode (14) formed on a surface of the first semiconductor layer (10) opposite to the second semiconductor layer (11) and being in ohmic contact with the first semiconductor layer (10);
an insulating films (15) covering inner surfaces of the trenches (12) of the second semiconductor layer (11); and
a trench MOS gates (16) embedded in the trenches (12) of the second semiconductor layer (11) so as to be covered with the insulating films (15) and is in contact with the anode electrode (13),
wherein a donor concentration in the second semiconductor layer (11) is lower than the donor concentration in the first semiconductor layer (10),
wherein the donor concentration in the second semiconductor layer (11) is not less than 1.0×10 16 cm -3 and not more than 6.0×10 16 cm -3 , and
wherein a thickness of the second semiconductor layer (11) is not less than 4.5 µm and not more than 9 µm.

8. 发明公开

EP4084064A1 SEMICONDUCTOR DEVICE 审中-实审
公开(公告)号：EP4084064A1
公开(公告)日：2022-11-02
申请号：EP20905852.8
申请日：2020-12-21
申请人： Tamura Corporation , Novel Crystal Technology, Inc.
发明人： MACHIDA, Nobuo , SASAKI, Kohei
IPC分类号： H01L23/50 , H01L21/60 , H01L29/872
摘要： Provided is a semiconductor device that has, mounted on a lead frame, a vertical semiconductor element which uses a Ga 2 O 3 -based semiconductor as the material of a substrate and epitaxial layer, the semiconductor device being capable of effectively releasing heat from the semiconductor device to the lead frame. As one embodiment, a semiconductor device 1 is provided which comprises: a lead frame 20 that has a projection 200 on the surface; and an SBD 10 that is mounted face down on the lead frame 20 and includes a substrate 11 which is made of a Ga 2 O 3 -based semiconductor, an epitaxial layer 12 which is stacked on the substrate 11 and made of the Ga 2 O 3 -based semiconductor, a cathode electrode 13 which is connected to the substrate 11, and an anode electrode 14 which is connected to the epitaxial layer 12 and has a field plate part 140 on an outer peripheral part. The SBD 10 is fixed on the projection 200, and an outer peripheral part 120 of the epitaxial layer 12 is located right above a flat part 201 of the lead frame 20.

9. 发明公开

EP3903993A1 LEAD-FREE SOLDER ALLOY, SOLDER JOINING MATERIAL, ELECTRONIC CIRCUIT MOUNTING BOARD, AND ELECTRONIC CONTROL DEVICE 审中-公开
公开(公告)号：EP3903993A1
公开(公告)日：2021-11-03
申请号：EP19905925.4
申请日：2019-12-11
申请人： Tamura Corporation
发明人： MUNEKAWA Yurika , NAKANO Takeshi , ARAI Masaya , SHIMAZAKI Takanori , KATSUYAMA Tsukasa
IPC分类号： B23K35/26 , B23K35/363 , C22C13/00 , C22C13/02 , H05K3/34
摘要： There is provided a lead-free solder alloy comprising 2.0% by mass or more and 4.0% by mass or less of Ag, 0.3% by mass or more and 0.7% by mass or less of Cu, 1.2% by mass or more and 2.0% by mass or less of Bi, 0.5% by mass or more and 2.1% by mass or less of In, 3.0% by mass or more and 4.0% by mass or less of Sb, 0.001% by mass or more and 0.05% by mass or less of Ni, 0.001% by mass or more and 0.01% by mass or less of Co, and the balance being Sn so that heat fatigue resistance properties can be exhibited even in an environment with very severe temperature variations, for example from -40°C to 175°C, and the progress of a crack occurring in the solder joint can be suppressed even in a harsh environment where such very severe temperature variations and vibration are loaded.

10. 发明公开

EP3703137A1 SCHOTTKY BARRIER DIODE 审中-公开
公开(公告)号：EP3703137A1
公开(公告)日：2020-09-02
申请号：EP18870149.4
申请日：2018-09-26
申请人： TDK Corporation , Tamura Corporation , Novel Crystal Technology, Inc.
发明人： ARIMA Jun , HIRABAYASHI Jun , FUJITA Minoru , SASAKI Kohei
IPC分类号： H01L29/872 , H01L29/06 , H01L29/41 , H01L29/47
摘要： An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate20. The drift layer 30 has a plurality of trenches 60 formed in a position overlapping the anode electrode 40 in a plan view. Among the plurality of trenches 60, a trench 60a positioned at the end portion has a selectively increased width W2. Thus, the curvature radius of the bottom portion of the trench 60a is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench 60a positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.

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