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1. 发明公开

EP0450393A3 Improved polysilicon and process therefor 失效
标题翻译：改进的多晶硅及其工艺
公开(公告)号：EP0450393A3
公开(公告)日：1992-09-16
申请号：EP91104236.4
申请日：1991-03-19
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall
IPC分类号： C01B33/027 , B01J8/26
CPC分类号： C01B33/029
摘要： Semiconductor grade polysilicon in the form of free flowing, approximately spherical particles produced in a fluidized bed, and having a reduced surface silicon dust content and hydrogen content. Such products are formed in two operations utilizing fluidized beds. In the first operation, silicon is deposited on polysilicon seed particles. In the second operation, trichlorosilane or other halogenated silane is decomposed at an elevated temperature to provide a thin silicon coat, which binds the silicon fines to the larger particles. While the particles are exposed to the decomposition temperature employed, hydrogen diffuses out of the particles resulting in a reduction in hydrogen content and producing a polysilicon particle with a smooth shiny surface.

2. 发明公开

EP0303973A1 Fluid bed reactor and process 有权
标题翻译： Fliessbettreaktor和Verfahren。
公开(公告)号：EP0303973A1
公开(公告)日：1989-02-22
申请号：EP88113076.9
申请日：1988-08-11
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall
IPC分类号： C01B33/02 , B01J8/24
CPC分类号： C01B33/029 , B01J8/1836 , B01J2208/00088 , B01J2208/00371 , B01J2208/00407 , C01B33/027 , Y10S118/05
摘要： Undesirable conversion of a silicon source, such as silane, in the freeboard above a fluidized bed of silicon particles in a fluidized bed reactor, can be reduced by cooling the gas within the freeboard. Preferably, the reduction in temperature is achieved by introducing into the freeboard a stream of relatively cool quench gas such as hydrogen, which also reduces the concentration of silane in the freeboard. As a result of these two factors, the invention improves the service factor of the fluidized bed apparatus and reduces the amount of silane conversion to undesired by-products.
摘要翻译：可以通过冷却干舷内的气体来减少在流化床反应器中的硅颗粒流化床上方的干舷中的硅源（例如硅烷）的不希望的转化。优选地，通过将诸如氢气的相对冷却的骤冷气体流引入干舷中来实现温度的降低，这也降低了干舷中硅烷的浓度。作为这两个因素的结果，本发明改进了流化床装置的使用系数，并将硅烷转化量减少到不期望的副产物。

3. 发明公开

EP0450393A2 Improved polysilicon and process therefor 失效
标题翻译： Polysilicium和Verfahren zu seiner Herstellung。
公开(公告)号：EP0450393A2
公开(公告)日：1991-10-09
申请号：EP91104236.4
申请日：1991-03-19
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall
IPC分类号： C01B33/027 , B01J8/26
CPC分类号： C01B33/029
摘要： Semiconductor grade polysilicon in the form of free flowing, approximately spherical particles produced in a fluidized bed, and having a reduced surface silicon dust content and hydrogen content. Such products are formed in two operations utilizing fluidized beds. In the first operation, silicon is deposited on polysilicon seed particles. In the second operation, trichlorosilane or other halogenated silane is decomposed at an elevated temperature to provide a thin silicon coat, which binds the silicon fines to the larger particles. While the particles are exposed to the decomposition temperature employed, hydrogen diffuses out of the particles resulting in a reduction in hydrogen content and producing a polysilicon particle with a smooth shiny surface.
摘要翻译：在流化床中产生的自由流动的近似球形的颗粒形式的半导体级多晶硅，并具有降低的表面硅粉含量和氢含量。这样的产品在利用流化床的两个操作中形成。在第一操作中，硅沉积在多晶硅种子颗粒上。在第二操作中，三氯硅烷或其它卤代硅烷在升高的温度下分解，以提供将硅细粉与较大颗粒结合的薄硅涂层。当颗粒暴露于所用的分解温度时，氢从颗粒中扩散，导致氢含量的降低并产生具有光滑光泽表面的多晶硅颗粒。

4. 发明公开

EP0363743A3 Preparation of high purity boron 失效
标题翻译：高纯硼的制备
公开(公告)号：EP0363743A3
公开(公告)日：1991-07-03
申请号：EP89117963.2
申请日：1989-09-28
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall , Ibrahim, Jameel
IPC分类号： C01B35/02 , C30B15/04
CPC分类号： C01B35/023 , C30B15/04 , Y10T428/29 , Y10T428/2982
摘要： Electronic grade boron in the form of free-flowing, bead-like particles, and suitable for use in continuous and semi-continuous Czochralski systems for preparing doped, single crystal silicon, said particles having an average size within the range of from 500 to 700 microns, a size distribution of less than 100 - 150 microns, and a purity of at least 99.9995 percent. A process for preparing it, comprising contacting in a fluidized bed, (a) boron seed particles having a size within the range of from 150 to 200 millimicrons with (b) a gas comprising a thermally decomposable boron hydride, such as diborane ou decaborane, said seed particles being above the decompostition temperature of said hydride, whereby deposition of boron on said seed particles takes place until said particles have grown to an average size within the range of from 500 to 700 microns.

5. 发明公开

EP0305867A2 Hydrogen purification process 有权
标题翻译： Verfahren zur Reinigung von Wasserstoff。
公开(公告)号：EP0305867A2
公开(公告)日：1989-03-08
申请号：EP88113730.1
申请日：1988-08-23
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall
IPC分类号： C01B3/56 , C01B33/02 , C01B31/08
CPC分类号： C01B3/56 , C01B32/36 , C01B33/029 , C01B2203/043 , C01B2203/0465 , C01B2203/048
摘要： Hydrogen-containing effluent gas can be treated with activated carbon to remove boron or phosphorus impurity prior to recycle to a fluidized bed reactor. The process is conducted at cryogenic temperatures.
摘要翻译：在循环到流化床反应器之前，可以用活性炭处理含氢废气以除去硼或磷杂质。该过程在低温下进行。

6. 发明公开

EP0258027A2 Preparation of polysilicon by silane pyrolysis 有权
标题翻译： Herstellung von polykristallinem Silizium durch Pyrolyse von Silan。
公开(公告)号：EP0258027A2
公开(公告)日：1988-03-02
申请号：EP87307464.5
申请日：1987-08-24
申请人： ETHYL CORPORATION
发明人： Gautreaux, Marcelian Francis , Allen, Robert Hall
IPC分类号： C01B33/02
CPC分类号： B01J8/26 , C01B33/027 , C01B33/029 , Y10S117/912 , Y10T428/2991 , Y10T428/2995
摘要： A polysilicon process is disclosed in which the fines which are inherently produced in a fluid bed deposition type operation using silicon seed particles and a silane feed are in effect glued on to the product particles so as to reduce the undesirable effect of the silicon fines. The process comprises operating a fluid bed in two modes. In the first mode, high productivity is favored at the expense of producing fines which are produced by homogeneous decomposition of the silane feed. In the second mode, the fines are in effect glued on to the particles to which they are adhered by means of deposition of a thin layer of silicon. In the second mode, the concentration of the silane in the feed gases is reduced thus favoring hetergeneous deposition of the silicon on the silicon particles in the bed. The process can be operated using a single fluid bed reactor by alternating cycles or in a more continuous manner utilizing two fluid bed reactors, the first reactor being operated at the high productivity rate with the second reactor taking the silicon particles from the first reactor and operated at the gluing on conditions.
摘要翻译：公开了一种多晶硅工艺，其中在使用硅种子颗粒和硅烷进料的流化床沉积型操作中固有产生的细粒实际上胶合到产物颗粒上，以便减少硅细粉的不期望的影响。该方法包括以两种模式操作流化床。在第一种模式中，以生产通过硅烷进料的均匀分解产生的细粉为代价，高生产率是有利的。在第二种模式中，通过沉积薄的硅层，细粒实际上胶合到它们所粘附的颗粒上。在第二模式中，进料气体中硅烷的浓度降低，从而有利于硅在床中的硅颗粒上的杂质沉积。该方法可以使用单个流化床反应器通过交替循环或以更连续的方式利用两个流化床反应器来操作，第一反应器以高生产率操作，第二反应器从第一反应器取出硅颗粒并操作在胶合条件下。

7. 发明公开

EP0363742A1 Polysilicon with diminished hydrogen content 有权
标题翻译： Polysilicium mit vermindertem Wasserstoffgehalt。
公开(公告)号：EP0363742A1
公开(公告)日：1990-04-18
申请号：EP89117962.4
申请日：1989-09-28
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall , Boone, James Edward
IPC分类号： C01B33/029
CPC分类号： C01B33/037 , C01B33/029
摘要： The hydrogen content of polysilicon can be reduced by heat treatment. The process is preferably conducted on polysilicon particles in bead-like form produced by chemical vapor deposition in a fluidized bed. The heat treatment is preferably conducted at a temperature of 1000-1200°C. for a time sufficient to reduce the hydrogen content, and insufficient to cause agglomeration of the particles being treated. In order to reduce the tendency of particles to agglomerate at the process temperature employed, the particle bed is preferably maintained in motion during the dehydrogenation. The products produced by the process can have a hydrogen content of 30 ppma or less. These improved products can be used to produce monocrystalline silicon for the production of semiconductor devices.
摘要翻译：通过热处理可以减少多晶硅的氢含量。该方法优选在通过化学气相沉积在流化床中产生的珠状形式的多晶硅颗粒上进行。热处理优选在1000-1200℃的温度下进行足以降低氢含量的时间，并且不足以引起被处理颗粒的团聚。为了降低所使用的工艺温度下颗粒聚集的倾向，优选在脱氢过程中保持颗粒床运动。该方法生产的产品可以具有30ppma或更低的氢含量。这些改进的产品可用于制造用于生产半导体器件的单晶硅。

8. 发明公开

EP0258027A3 Preparation of polysilicon by silane pyrolysis 有权
标题翻译：通过硅烷热解制备多晶硅
公开(公告)号：EP0258027A3
公开(公告)日：1989-02-22
申请号：EP87307464.5
申请日：1987-08-24
申请人： ETHYL CORPORATION
发明人： Gautreaux, Marcelian Francis , Allen, Robert Hall
IPC分类号： C01B33/02
CPC分类号： B01J8/26 , C01B33/027 , C01B33/029 , Y10S117/912 , Y10T428/2991 , Y10T428/2995
摘要： A polysilicon process is disclosed in which the fines which are inherently produced in a fluid bed deposition type operation using silicon seed particles and a silane feed are in effect glued on to the product particles so as to reduce the undesirable effect of the silicon fines. The process comprises operating a fluid bed in two modes. In the first mode, high productivity is favored at the expense of producing fines which are produced by homogeneous decomposition of the silane feed. In the second mode, the fines are in effect glued on to the particles to which they are adhered by means of deposition of a thin layer of silicon. In the second mode, the concentration of the silane in the feed gases is reduced thus favoring hetergeneous deposition of the silicon on the silicon particles in the bed. The process can be operated using a single fluid bed reactor by alternating cycles or in a more continuous manner utilizing two fluid bed reactors, the first reactor being operated at the high productivity rate with the second reactor taking the silicon particles from the first reactor and operated at the gluing on conditions.

9. 发明授权

EP0303973B1 Fluid bed reactor and process 有权
标题翻译：流化床反应器和过程
公开(公告)号：EP0303973B1
公开(公告)日：1993-01-27
申请号：EP88113076.9
申请日：1988-08-11
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall
IPC分类号： C01B33/02 , B01J8/24
CPC分类号： C01B33/029 , B01J8/1836 , B01J2208/00088 , B01J2208/00371 , B01J2208/00407 , C01B33/027 , Y10S118/05

10. 发明授权

EP0363742B1 Polysilicon with diminished hydrogen content 有权
标题翻译：具有二维氢含量的多晶硅
公开(公告)号：EP0363742B1
公开(公告)日：1993-06-09
申请号：EP89117962.4
申请日：1989-09-28
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall , Boone, James Edward
IPC分类号： C01B33/029
CPC分类号： C01B33/037 , C01B33/029

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