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1. 发明公开

EP2298968A3 Method for growing nanowires 审中-公开
标题翻译：方法生产的纳米线
公开(公告)号：EP2298968A3
公开(公告)日：2011-10-05
申请号：EP10195590.4
申请日：2001-08-22
申请人： President and Fellows of Harvard College
发明人： Lieber, Charles , Cui, Ying , Duan, Xiangfeng , Huang, Yung-Sheng
IPC分类号： C30B7/00 , C30B29/60 , H01L29/06 , H01L21/02 , C30B11/12 , H01L29/207 , H01L29/16 , B82Y10/00 , B82Y15/00 , G11C13/00 , C30B11/00 , C30B25/00 , G01N27/414 , G01N33/543 , H01L51/00
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.

2. 发明公开

EP2360298A2 Method for depositing a semiconductor nanowire 审中-公开
标题翻译：维尔法赫·祖尔·阿切斯登
公开(公告)号：EP2360298A2
公开(公告)日：2011-08-24
申请号：EP10195600.1
申请日：2001-08-22
申请人： President and Fellows of Harvard College
发明人： Lieber, Charles , Cui, Ying , Duan, Xiangfeng , Huang, Yung-Sheng
IPC分类号： C30B29/60 , C30B7/00 , H01L29/06 , H01L21/02
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method for depositing one or more semiconductor nanowires on a substrate, the method comprising providing a substrate and depositing the one or more semiconductor nanowires on the surface of the substrate.
摘要翻译：一种用于在衬底上沉积一个或多个半导体纳米线的方法，所述方法包括提供衬底并在所述衬底的表面上沉积所述一个或多个半导体纳米线。

3. 发明公开

EP3131129A4 LIGHT-EMITTING ELEMENT AND LIGHTING SYSTEM 有权转让
标题翻译： LICHTEMITTIERENDERS ELEMENT UND BELEUCHTUNGSSYSTEM
公开(公告)号：EP3131129A4
公开(公告)日：2017-10-04
申请号：EP15776605
申请日：2015-04-07
申请人： LG INNOTEK CO LTD
发明人： SONG KI YOUNG , LIM HYUN CHUL , JUNG MYUNG HOON
IPC分类号： H01L33/14 , H01L33/00 , H01L33/08 , H01L33/36 , H01L33/38
CPC分类号： H01L33/04 , H01L21/00 , H01L27/15 , H01L29/18 , H01L29/72 , H01L33/0079 , H01L33/08 , H01L33/14 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/62
摘要： An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system. A light-emitting element according to the embodiment may comprise: a first conductive semiconductor layer (112); a second conductive semiconductor layer (116) disposed below the first conductive semiconductor layer (112); an active layer (114) disposed between the first conductive semiconductor layer (112) and the second conductive semiconductor layer (116); a plurality of holes (H) exposing parts of the first conductive semiconductor layer (112) to the bottom surface of the second conductive semiconductor layer (116) by penetrating the second conductive semiconductor layer (116) and the active layer (114); first contact electrodes (160) electrically connected to the first conductive semiconductor layer (112) from the bottom surface of the second conductive semiconductor layer (116) through the plurality of holes (H); an insulation layer (140) disposed between the first contact electrode (160) and the plurality of holes (H); a bonding layer (156) electrically connected to the first contact electrodes (160); a support member (158) disposed below the bonding layer (156); a second contact electrode (132) electrically connected to the second conductive semiconductor layer (116); and a first current-spreading semiconductor layer (191) inside the first conductive semiconductor layer (112) above the first contact electrode (160).
摘要翻译：实施例涉及发光元件，其制造方法，发光元件封装和照明系统。根据实施例的发光元件可以包括：第一导电半导体层（112）;第二导电半导体层设置在所述第一导电半导体层（112）下方的第二导电半导体层（116）; 设置在第一导电半导体层（112）和第二导电半导体层（116）之间的有源层（114）; 通过贯穿所述第二导电半导体层和所述有源层而将所述第一导电半导体层的部分暴露到所述第二导电半导体层的所述底表面的多个孔; 通过所述多个孔（H）从所述第二导电半导体层（116）的底表面电连接到所述第一导电半导体层（112）的第一接触电极（160）; 设置在第一接触电极（160）和多个孔（H）之间的绝缘层（140）; 电连接到所述第一接触电极（160）的接合层（156）; 布置在所述结合层（156）下方的支撑构件（158）; 电连接到第二导电半导体层（116）的第二接触电极（132）; 以及在第一接触电极（160）上方的第一导电半导体层（112）内部的第一电流扩展半导体层（191）。

4. 发明授权

EP1314189B1 ELECTRICAL DEVICE COMPRISING DOPED SEMICONDUCTOR NANOWIRES AND METHOD FOR ITS PRODUCTION 有权
标题翻译：电气设备含有型半导体纳米线和方法及其
公开(公告)号：EP1314189B1
公开(公告)日：2013-02-27
申请号：EP01966109.9
申请日：2001-08-22
申请人： President and Fellows of Harvard College
发明人： LIEBER, Charles, M. , CUI, Ying , DUAN, Xiangfeng , HUANG, Yung-Sheng
IPC分类号： H01L21/00 , C30B11/00 , C30B29/60 , C30B11/12 , H01L29/207 , H01L29/267 , H01L51/00 , H01L21/02
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.

5. 发明公开

EP1314189A2 DOPED ELONGATED SEMICONDUCTORS, THEIR GROWTH AND APPLICATIONS 有权
标题翻译：电气设备含有型半导体纳米线和方法及其
公开(公告)号：EP1314189A2
公开(公告)日：2003-05-28
申请号：EP01966109.9
申请日：2001-08-22
申请人： President And Fellows of Harvard College
发明人： LIEBER, Charles, M. , CUI, Ying , DUAN, Xiangfeng , HUANG, Yung-Sheng
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.

6. 发明公开

EP2360298A3 Method for depositing a semiconductor nanowire 审中-公开
标题翻译：一种用于半导体纳米线的沉积工艺
公开(公告)号：EP2360298A3
公开(公告)日：2011-10-05
申请号：EP10195600.1
申请日：2001-08-22
申请人： President and Fellows of Harvard College
发明人： Lieber, Charles , Cui, Ying , Duan, Xiangfeng , Huang, Yung-Sheng
IPC分类号： C30B29/60 , C30B7/00 , H01L29/06 , H01L21/02 , C30B11/00 , H01L51/00 , B82Y15/00 , B82Y10/00 , G11C13/00
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method for depositing one or more semiconductor nanowires on a substrate, the method comprising providing a substrate and depositing the one or more semiconductor nanowires on the surface of the substrate.

7. 发明公开

EP2298968A2 Method for growing nanowires 审中-公开
标题翻译：生长纳米线的方法
公开(公告)号：EP2298968A2
公开(公告)日：2011-03-23
申请号：EP10195590.4
申请日：2001-08-22
申请人： President and Fellows of Harvard College
发明人： Lieber, Charles , Cui, Ying , Duan, Xiangfeng , Huang, Yung-Sheng
IPC分类号： C30B7/00 , C30B29/60 , H01L29/06 , H01L21/02
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.
摘要翻译：一种方法包括提供催化剂颗粒群体并从催化剂颗粒群体催化地生长半导体纳米线群体。群体的纳米线具有小于约20％的直径变化，并且群体的纳米线具有小于500纳米的最小宽度。群体的纳米线优选具有小于约10％的直径变化。

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