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1. 发明授权

EP1150346B1 A process for preparing insulating material having low dielectric constant 有权
标题翻译：一种用于生产绝缘的低介电常数的材料的过程
公开(公告)号：EP1150346B1
公开(公告)日：2011-12-28
申请号：EP01303846.8
申请日：2001-04-27
申请人： LG Chem Investment, Ltd
发明人： Ko, Min-jin , Nam, Hye-Yeong , Shin, Dong-Seok , Kang, Jung-Won , Moon, Myung-Sun
IPC分类号： H01L21/316 , H01L21/768
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/76801 , H01L2924/0002 , Y10S438/96 , H01L2924/00

2. 发明公开

EP2182556A4 PROCESS FOR MANUFACTURING SOLAR CELL 有权
标题翻译：用于生产太阳能电池
公开(公告)号：EP2182556A4
公开(公告)日：2011-05-18
申请号：EP07830906
申请日：2007-10-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIMOTO YOICHIRO
IPC分类号： H01L31/18 , H01L21/306
CPC分类号： H01L31/02363 , Y02E10/50 , Y10S438/96

3. 发明授权

EP0851464B1 Traitement anti-reflet de surfaces réflectives 失效
标题翻译：反射面的防反射处理
公开(公告)号：EP0851464B1
公开(公告)日：2010-04-21
申请号：EP97403107.2
申请日：1997-12-22
申请人： Chartoleaux KG Limited Liability Company
发明人： Francou, Jean-Marc , Halimaoui, Aomar , Schiltz, André
IPC分类号： H01L21/027
CPC分类号： H01L21/0276 , Y10S430/151 , Y10S438/96 , Y10S438/964

4. 发明公开

EP1964179A1 REDUCED-RESISTANCE FINFETS AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：用于FinFET的抵抗力降低
公开(公告)号：EP1964179A1
公开(公告)日：2008-09-03
申请号：EP06830385.8
申请日：2006-12-05
申请人： International Business Machines Corporation
发明人： MANDELMAN, Jack, Allan , CHENG, Kangguo , HSU, Louis, Lu-Chen , YANG, Haining
IPC分类号： H01L29/786 , H01L21/336 , H01L29/45 , H01L21/285 , H01L21/8234
CPC分类号： H01L29/785 , H01L21/823418 , H01L21/823437 , H01L29/41791 , H01L29/665 , H01L29/6653 , H01L29/66795 , H01L29/78618 , H01L2029/7858 , Y10S438/96
摘要： A method of manufacturing a finFET including the steps of (1) providing a substrate; and (2) forming at least one source/drain diffusion region of the finFET on the substrate. Each source/drain diffusion region includes (a) an interior region of unsilicided silicon; and (b) silicide formed on a top surface and sidewalls of the region of unsilicided silicon.

5. 发明公开

EP1560263A3 Method for forming macropores in a layer and products obtained thereof 审中-公开
标题翻译：在一个层的宏观孔隙，从而制成的产品的制造过程
公开(公告)号：EP1560263A3
公开(公告)日：2008-04-02
申请号：EP05447014.1
申请日：2005-02-02
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)
发明人： Bearda, Twan , Kunnen, Eddy
IPC分类号： H01L21/308 , H01L21/033 , H01L21/762
CPC分类号： B81C1/00031 , B81B1/002 , B81C2201/0115 , H01L21/0331 , H01L21/0337 , H01L21/3086 , H01L33/22 , Y10S438/96
摘要： The present invention discloses a method for forming macropores in a substrate. On a substrate a pattern of submicron features is formed. This pattern is covered with a layer, which is preferably selectively removable with respect to the substrate and the submicron features. This cover layer is removed until the submicron features are exposed. The submicron features are then etched selectively to the cover layer, thereby creating a pattern of submicron openings in this cover layer. The patterned cover layer is used as a hardmask to etch macropores in the substrate.

6. 发明授权

EP0867923B1 Process of separating a layer 失效
标题翻译：一种用于层的分离处理
公开(公告)号：EP0867923B1
公开(公告)日：2004-06-23
申请号：EP98302218.7
申请日：1998-03-24
申请人： CANON KABUSHIKI KAISHA
发明人： Iwane, Masaaki , Yonehara, Takao , Ohmi, Kazuaki
IPC分类号： H01L21/304 , H01L21/20 , B26F3/12 , H01L31/18
CPC分类号： B32B43/00 , H01L21/2007 , H01L21/76259 , Y10S438/96 , Y10S438/974 , Y10S438/977

7. 发明公开

EP1345842A2 VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS SOWIE EIN NACH DEM VERFAHREN HERGESTELLTES HALBLEITERBAUELEMENT, WOBEI DAS HALBLEITERBAUELEMENT INSBESONDERE EINE BEWEGLICHE MASSE AUFWEIST 有权
标题翻译：一种用于制造半导体装置以及根据半导体器件的方法制造的材料，其中所述半导体组件包括尤其是可动质量的过程
公开(公告)号：EP1345842A2
公开(公告)日：2003-09-24
申请号：EP01989377.5
申请日：2001-12-06
申请人： ROBERT BOSCH GMBH
发明人： BENZEL, Hubert , WEBER, Heribert , SCHAEFER, Frank
IPC分类号： B81B3/00
CPC分类号： B81C1/00492 , B81B2201/0235 , B81B2203/0315 , B81C2201/0115 , Y10S438/96
摘要： The invention relates to a method for producing a semiconductor component (330; 400; 500; 600; 700; 800; 900; 1000; 1100) such as especially, a multiple layer semiconductor component, having a movable mass or an oscillator structure (501, 502; 701, 702), of the type described in the corresponding independent patent claim; and to a semiconductor component produced according to this method. The aim of the invention is to provide a simple and economical means of producing a micromechanical component with monocrystalline oscillator structures (501, 502; 601, 702) such as especially, an acceleration sensor or a rotation rate sensor, in the field of surface micromechanics. To this end, the inventive method provides that in a first step, a first porous layer (301; 901) is formed in the semiconductor component and in a second step, a cavity or a cavern (302; 1101) is formed in the semiconductor component, beneath or from the first porous layer (301).

8. 发明公开

EP1255272A3 Silicon electron emitter 审中-公开
标题翻译：电子发射器件由硅制成的
公开(公告)号：EP1255272A3
公开(公告)日：2003-08-13
申请号：EP02252584.4
申请日：2002-04-11
申请人： Hewlett-Packard Company
发明人： Sheng, Xia , Koshida, Nobuyoshi , Kuo, Huei-Pei
IPC分类号： H01J1/312 , H01J9/02
CPC分类号： H01J1/308 , H01J9/022 , Y10S438/96
摘要： A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter 10 includes an election injection layer 1. an active layer of high porosity porous silicon material 3 in contact with the electron iniection layer 1, a contact layer of low porosity porous silicon material 5 in contact with the active layer 3 and including an interface surface 12 with a heavily doped region 8, and an optional top electrode 7 in contact with the contact layer 5. The contact layer 5 reduces contact resistance between the active layer 3 and the top electrode 7 and the heavily doped region 8 reduces resistivity of the contact layer 5 thereby increasing electron emission efficiency and stable electron emission from the top electrode 7. The electron injection layer 1 is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer 3 and the contact layer 5 are formed in a layer of silicon material 6 that is deposited on the electron injection layer 1 and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization. the interface surface 12 can be doped to form the heavily doped region 8. The layer of silicon material 8 can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.

9. 发明授权

EP0558554B1 SILICON-ON-POROUS-SILICON; METHOD OF PRODUCTION AND MATERIAL 失效
标题翻译：硅多孔硅，方法进行生产和产品
公开(公告)号：EP0558554B1
公开(公告)日：2002-12-18
申请号：EP91920076.6
申请日：1991-11-18
申请人： QinetiQ Limited
发明人： HODGE, Alison, Meryl DRA Electronics Division, , KEEN, John, Michael DRA Electronics Division,
IPC分类号： H01L21/76 , H01L21/265 , H01L21/20 , H01L21/321
CPC分类号： H01L21/2022 , H01L21/26506 , H01L21/321 , H01L21/76245 , Y10S118/01 , Y10S118/03 , Y10S438/96
摘要： The invention provides a method of producing silicon-on-porous-silicon material comprising the steps of (i) manufacturing a porous silicon layer on a suitable silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface, (ii) applying an implanted ion dose to at least a portion of the porous silicon surface such that the dose is sufficient to cause amorphization of porous silicon. The material produced by the method of the invention can then be used for production of silicon-on-insulator material by oxidation of remaining porous silicon and recrystallization of amorphised silicon. Typically such material can be used for manufacture of e.g. SOI C-MOS devices and bipolar transistors. Alternatively, the method of the invention can be used for the manufacture of e.g. pyroelectric devices.

10. 发明授权

EP0553856B1 Method of preparing a semiconductor substrate 失效
标题翻译：一种用于生产半导体衬底的工艺
公开(公告)号：EP0553856B1
公开(公告)日：2002-04-17
申请号：EP93101417.9
申请日：1993-01-29
申请人： CANON KABUSHIKI KAISHA
发明人： Sakaguchi, Kiyofumi, c/o Canon Kabushiki Kaisha , Yonehara, Takao, c/o Canon Kabushiki Kaisha , Miyawaki, Mamoru, c/o Canon Kabushiki Kaisha
IPC分类号： H01L21/76 , H01L21/20
CPC分类号： H01L31/1892 , H01L21/02381 , H01L21/0245 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01L21/30604 , H01L21/76251 , H01L21/76256 , Y02E10/50 , Y10S438/96

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