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1. 发明授权

EP1689553B1 METHODS FOR REPAIR OF SINGLE CRYSTAL SUPERALLOYS BY LASER WELDING AND PRODUCTS THEREOF 有权转让
标题翻译： FOR REPAIR EINKRISTALLSUPERLEGIERUNGEN方法，通过激光焊接及其制品
公开(公告)号：EP1689553B1
公开(公告)日：2013-03-13
申请号：EP04821352.4
申请日：2004-12-03
申请人： Honeywell International Inc.
发明人： HU, Yiping , MADHAVA, Murali , HEHMANN, William, F.
IPC分类号： C30B33/06 , C30B29/52 , B23P6/00 , B23K26/00
CPC分类号： B23P6/007 , C30B29/52 , C30B33/06 , Y10S117/903 , Y10S117/904 , Y10S117/905

2. 发明授权

EP0962558B1 A method for producing a single-crystalline film 有权
标题翻译：一种用于制备单晶层的方法
公开(公告)号：EP0962558B1
公开(公告)日：2004-08-25
申请号：EP99304143.3
申请日：1999-05-27
申请人： NGK INSULATORS, LTD.
发明人： Imaeda, Minoru , Yoshino, Takashi
IPC分类号： C30B23/02 , C30B29/30 , G02F1/37
CPC分类号： G02F1/377 , C30B23/02 , C30B29/30 , G02F1/3551 , G02F2201/307 , G02F2202/20 , Y10S117/904 , Y10S117/918
摘要： A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, comprising the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating upon the target, thereby gasifying molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.

3. 发明公开

EP0758836A2 Electroluminescent laminate with thick film dielectric 失效
标题翻译： Elektrolumineszenter Verbundstoff mit Dickfilmdielektrikum
公开(公告)号：EP0758836A2
公开(公告)日：1997-02-19
申请号：EP96203180.3
申请日：1993-05-06
申请人： WESTAIM TECHNOLOGIES INC.
发明人： Wu, Xingwei , Stiles, James Alexander Robert , Foo, Ken Kok , Bailey, Philip
IPC分类号： H05B33/22 , H05B33/26 , H05B33/10 , H05B33/12
CPC分类号： H05B33/28 , H05B33/10 , H05B33/12 , H05B33/22 , H05B33/26 , Y10S117/904 , Y10S428/917 , Y10S438/94
摘要： A process is described of forming an electroluminescent (EL) display panel formed from an EL laminate having a phosphor layer (22) sandwiched between a front and a rear set of intersecting address lines (14,24), the rear address lines (12) being formed on a substrate (12) having sufficient rigidity to support the laminate and the phosphor layer being separated from the rear address lines by one or more dielectric layers (18,20); the process comprising the steps of: (a) providing a substrate formed with a plurality of through holes (32) patterned to be proximate the ends of the address lines to be subsequently formed; (b) forming a conductive path through each of the through holes in the substrate to provide for electrical connection of each address line, subsequently formed, to the voltage driving circuit (30); (c) forming the rear spaced address lines (14) on the substrate (12), one end of each line ending adjacent a through hole (32) and being electrically connected with the conductive path therethrough; (d) forming a dielectric layer (18,20) on the rear address lines (14); (e) forming the phosphor layer (22) above the dielectric layer: (f) optionally forming a transparent dielectric layer on the phosphor layer; and then (g) forming the front spaced address lines (24) on the underlying phosphor or transparent dielectric layer, one end of each line ending adjacent a through hole and being electrically connected with the conductive path therethrough.
The invention also describes a method for laser scribing a pattern in a planar laminate (preferably an EL panel) having at least one overlying layer (e.g. a transparent layer for forming the front address lines (24)) and at least one underlying layer (e.g. a phosphor layer (22)); the method comprising: applying a focused laser beam on the overlying layer side of the laminate, said laser beam having a wavelength which is substantially unabsorbed by the overlying layer (24) but which is absorbed by the underlying layer (22), such that at least a portion of the underlying layer (22) is directly ablated and the overlying layer (24) is indirectly ablated throughout its thickness (thereby forming individual front address lines (24)).
摘要翻译：描述了形成由EL层叠体形成的电致发光（EL）显示面板的方法，该层压体具有夹在前后一组交叉地址线（14,24）之间的荧光层（22），后地址线（12）形成在具有足够的刚度以支撑所述层压体的基底（12）上，并且所述荧光体层通过一个或多个介电层（18,20）与所述后地址线分离; 所述方法包括以下步骤：（a）提供形成有多个通孔（32）的基板，所述多个通孔（32）图案化以接近要随后形成的地址线的末端; （b）形成穿过基板中每个通孔的导电路径，以提供随后形成的每个地址线与电压驱动电路（30）的电连接; （c）在衬底（12）上形成后隔开的地址线（14），每条线的一端与通孔（32）相邻并且与导电通路电连接; （d）在后地址线（14）上形成电介质层（18,20）; （e）在电介质层上形成荧光体层（22）：（f）可选地在荧光体层上形成透明电介质层; 然后（g）在下面的荧光体或透明电介质层上形成前面分开的地址线（24），每条线的一端与通孔相邻并且与导电通路电连接。本发明还描述了一种用于在具有至少一个上覆层（例如，用于形成前地址线（24）的透明层）的平面层压板（优选EL板）中激光刻划图案的方法和至少一个下层（例如，磷光体层（22））; 所述方法包括：将聚焦激光束施加在所述层压体的覆盖层侧上，所述激光束具有基本上未被所述上覆层（24）吸收但被所述下层（22）吸收的波长，使得在下层（22）的至少一部分被直接烧蚀，并且覆盖层（24）在整个厚度上被间接消融（从而形成单独的前地址线（24））。

4. 发明公开

EP0730292A1 Method of growing semiconductor crystal and semiconductor fabricating apparatus 失效
标题翻译：一种用于生长其育种的半导体晶体和装置的方法
公开(公告)号：EP0730292A1
公开(公告)日：1996-09-04
申请号：EP95116337.7
申请日：1995-10-17
申请人： FUJI XEROX CO., LTD.
发明人： Miyamoto, Yasuaki, c/o Fuji Xerox Co., Ltd. , Asai, Ichirou, c/o Fuji Xerox Co., Ltd.
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , C30B25/18 , H01L21/02532 , H01L21/02595 , H01L21/02678 , H01L21/02686 , H01L21/2022 , Y10S117/904
摘要： The first feature of the present invention resides in that in a method of semiconductor crystallization, comprising a characteristic determining step of applying first crystallizing energy to a predetermined area of an amorphous semiconductor thin film to determine the size of an area so as to form a single crystal nucleus on the area; and a polycrystalline semiconductor thin film forming step of forming a polycrystalline semiconductor thin film from the amorphous semiconductor thin film, the polycrystalline semiconductor thin film forming step, comprises: a film forming step of forming an amorphous semiconductor thin film on the surface of a substrate; a first crystallizing step of applying first crystallizing energy at regular intervals on the area having the size determined by the characteristic determining step of the amorphous semiconductor thin film; and a second crystallizing step of applying second crystallizing energy to the amorphous semiconductor thin film to grow the crystal of the amorphous semiconductor thin film from the crystal nucleus formed by the first crystallizing step.
摘要翻译：本发明的第一特征中“”在半导体结晶的制造方法，包括将第一结晶能量到非晶半导体薄膜的确定性矿的预定区域的区域的大小的特性确定性挖掘步骤，从而形成一个单一的驻留上的区域晶核; 和多晶半导体薄膜形成由无定形半导体薄膜形成的多晶半导体薄膜的工序中，将多晶半导体薄膜形成工序中，包括：一个基片的表面上的非晶半导体薄膜的形成的膜形成工序; 施加在第一上的区域规则的间隔具有大小确定由非晶半导体薄膜的特性确定性采矿开采步骤结晶能的第一结晶化工序; 和施加第二结晶化的能量来使非晶半导体薄膜从由第一结晶步骤中形成的晶核生长非晶半导体薄膜的晶体的第二结晶化工序。

5. 发明公开

EP0655774A3 Method of forming polycrystalline silicon layer and surface treatment apparatus therefor 失效
标题翻译： Herstellungsverfahren von einer Polysiliziumschicht undOberflächenbehandlungsvorrichtungdafür。
公开(公告)号：EP0655774A3
公开(公告)日：1996-07-17
申请号：EP94117286.8
申请日：1994-11-02
申请人： SONY CORPORATION
发明人： Noguchi, Takashi, c/o Sony Corporation , Ogawa, Tohru, c/o Sony Corporation , Ikeda, Yuji, c/o Sony Corporation
IPC分类号： H01L21/20 , B23K26/06
CPC分类号： H01L21/02675 , B23K26/032 , B23K26/04 , B23K26/06 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/067 , B23K26/1224 , B23K26/123 , B23K26/702 , B23K26/705 , C23C16/24 , C23C16/56 , H01L21/02532 , H01L21/0262 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/223 , H01L21/268 , H01L21/3185 , H01L21/324 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , Y10S117/904 , Y10S148/09 , Y10S148/093
摘要： A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350°C to 500°C, more preferably 350°C to 450°C. Then, at least the amorphous silicon layer is exposed to laser light of an excimer laser in an extent greater than approximiately 10 cm 2 by single shot exposure. The energy density is 100 mJ/cm 2 to 500 mJ/cm 2 , preferably 280 mJ/cm 2 to 330 mJ/cm 2 . The pulse width is 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5J, preferably at least 10J. A surface treatment laser appraratus and different surface treatments e.g. oxidation or nitridation are also described.
摘要翻译：激光发射表面处理装置包括激光振荡器，扫描激光发生装置和照射室。易于进行退火处理，其中通过单次激光照射的面积大，激光的能量密度高。在从激光振荡器发射的激光的光路中设置衰减器，从激光振荡器发射的扫描激光，扫描激光发生装置位于通过衰减器的激光中，并提供光束均化器在来自扫描激光发生装置的激光中。

6. 发明公开

EP0644588A1 Wafer with epitaxial layer having a low defect density 失效
标题翻译：晶莹剔透的Fehlerdichte。
公开(公告)号：EP0644588A1
公开(公告)日：1995-03-22
申请号：EP94113145.0
申请日：1994-08-23
申请人： KOMATSU ELECTRONIC METALS CO., LTD
发明人： Uemura, Noriyuki , Motoura, Hisami , Nishimura, Masashi , Kohno, Mitsuo
IPC分类号： H01L21/66 , G01N21/88
CPC分类号： C30B13/00 , C30B15/00 , C30B29/06 , Y10S117/904 , Y10S438/974
摘要： There is provided a high quality epitaxial wafer on which the density of microscopic defects in the epitaxial layer is reduced to keep the gate oxide integrity thereof sufficiently high and to reduce the leakage current at the P-N junction thereof when devices are incorporated, thereby improving the yield of such devices. In an epitaxial wafer obtained by forming an epitaxial layer on a substrate, the density of IR laser scatterers is 5 x 10⁵ pieces/cm³ or less throughout the epitaxial layer.
摘要翻译：提供了一种高质量的外延晶片，其中外延层中的微观缺陷的密度降低，以保持其栅极氧化物完整性足够高，并且当器件被并入时，其PN结处的漏电流减小，从而提高产量的这种设备。在通过在衬底上形成外延层获得的外延晶片中，IR激光散射体的密度在整个外延层中为5×10 5个/ cm 3或更小。

7. 发明公开

EP0625594A2 Solid state process for the conversion of a polycrystallic ceramic material to a single crystal, particulary sapphir 失效
标题翻译：对于多晶陶瓷材料转化成单晶，特别是蓝宝石固态方法。
公开(公告)号：EP0625594A2
公开(公告)日：1994-11-23
申请号：EP94303398.5
申请日：1994-05-11
申请人： GENERAL ELECTRIC COMPANY
发明人： Maxwell, Randolph E. , Scott, Curtis Edward , Kaliszewski, Mary Sue , Jones, Marshall Gordon , Levinson, Lionel Monty , Erikson, Carl Edward
IPC分类号： C30B1/02 , C30B29/20
CPC分类号： C30B13/06 , C30B1/00 , C30B1/08 , C30B13/00 , C30B29/20 , Y10S117/904
摘要： A process for bulk conversion of a solid polycrystalline ceramic body to a single crystal body which comprises heating only a portion of said polycrystalline ceramic body with a localized energy source, without melting the entire said polycrystalline ceramic body, at a temperature and for a time sufficient to convert said polycrystalline ceramic body to said single crystal body.
In one embodiment of the invention, a dense polycrystalline alumina (PCA) article is converted to sapphire via a solid state conversion process.
A CO₂ laser energy source has been successfully employed as a localized energy source.
摘要翻译：多晶氧化铝体已通过其中的局部能量源用于只是身体的一部分加热到使用激光以上1800℃的温度下作为能量源导致转换成兰宝石的固态转化方法转化为蓝宝石在不到一个小时。的多晶氧化铝体有氧化镁含量低于50wppm的，低于100微米的平均晶粒尺寸，并且密度大于3.97克/立方厘米。

8. 发明授权

EP0368651B1 Epitaxial growth process and growing apparatus 失效
标题翻译：方法和设备的外延生长。
公开(公告)号：EP0368651B1
公开(公告)日：1994-09-07
申请号：EP89311586.5
申请日：1989-11-09
申请人： FUJITSU LIMITED
发明人： Mukai, Ryoichi
IPC分类号： C30B25/10 , C30B29/06
CPC分类号： H01L21/02532 , C30B25/105 , C30B29/06 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10S117/904 , Y10S148/017 , Y10S438/974
摘要： A process of epitaxially growing a semiconductor Si, Ge or SiGe single crystal layer on a semiconductor (Si or Ge) single crystal substrate, comprising the steps of: allowing a raw material gas (e.g., Si2H6 , GeH4) for the layer and a fluoride gas (e.g., Si2F6 , GeF4 , BF) of at least one element selected from the group consisting of the semiconductor element of the layer and a dopant for the layer to simultaneously flow over the substrate; and applying an ultraviolet light to the substrate to decompose the gases by an ultraviolet light excitation reaction to deposit the layer on the surface of the substrate heated at a temperature of from 250 to 400 DEG C. Prior to the epitaxial growth of the semiconductor layer, the substrate is cleaned by allowing the fluoride gas to flow over the substrate having a temperature of from a room temperature to 500 DEG C, and by irradiating an ultraviolet light to the substrate to remove a natural oxide layer from the substrate surface.

9. 发明公开

EP0457277A2 Ceramic superconductor and method of preparing the same 失效
标题翻译： Supraleitende Keramik und Verfahren zu ihrer Herstellung。
公开(公告)号：EP0457277A2
公开(公告)日：1991-11-21
申请号：EP91107796.4
申请日：1991-05-14
申请人： ENGINEERING RESEARCH ASSOCIATION FOR SUPERCONDUCTIVE GENERATION EQUIPMENT AND MATERIALS
发明人： Hayashi, Kazuhiko, c/o Osaka Works
IPC分类号： H01L39/24 , H01L39/12 , C04B35/50 , C04B35/00
CPC分类号： C30B29/225 , C30B13/00 , H01L39/126 , H01L39/2448 , Y10S117/904 , Y10S505/733 , Y10S505/74 , Y10S505/782 , Y10S505/785
摘要： A Bi-Sr-Ca-Cu-O ceramic superconductor contains 0112 phases which are finely dispersed in a 2212-phase matrix with its c-axis oriented perpendicular to a growth direction.
A method of preparing a Bi-Sr-Ca-Cu-O ceramic superconductor comprises the steps of growing crystals under conditions satisfying:

G/R ≧ 1 and G·R ≧ 10000

where G (K/cm) represents the temperature gradient at a solid-liquid interface and R (mm/h) represents the rate of crystal growth, and annealing the grown crystals in an atmosphere having oxygen partial pressure of at least 0.05 atm. within a temperature range of 800 to 860°C for at least 2 hours.
摘要翻译： Bi-Sr-Ca-Cu-O陶瓷超导体包含0112相，其细分散在2212相基体中，其c轴垂直于生长方向取向。制备Bi-Sr-Ca-Cu-O陶瓷超导体的方法包括在满足以下条件下生长晶体的步骤：G / R> / = 1和GR> / = 10000其中G（K / cm）表示温度梯度在固 - 液界面处，R（mm / h）表示晶体生长速率，并且在氧分压至少为0.05atm的气氛中退火生长的晶体。在800至860℃的温度范围内至少2小时。

10. 发明公开

EP0394462A4 METHOD OF FORMING A SEMICONDUCTOR THIN FILM AND APPARATUS THEREFOR 失效
标题翻译：形成半导体薄膜及其设备的方法
公开(公告)号：EP0394462A4
公开(公告)日：1991-04-17
申请号：EP89909240
申请日：1989-08-15
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： SUGIURA, HIDEO , YAMADA, TAKESHI , IGA, RYUZO
IPC分类号： C30B23/02 , C30B25/10 , H01L21/20 , H01L21/203
CPC分类号： C30B23/02 , B01J2219/1942 , C30B25/105 , H01L21/02381 , H01L21/02392 , H01L21/02395 , H01L21/02546 , H01L21/0262 , H01L21/02631 , H01L21/02639 , Y10S117/904

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