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1. 发明公开

EP1250738A2 HALBLEITERLASERSTRUKTUR 审中-公开
标题翻译：半导体激光器结构
公开(公告)号：EP1250738A2
公开(公告)日：2002-10-23
申请号：EP00993790.5
申请日：2000-12-04
申请人： Infineon Technologies AG
发明人： RIECHERT, Henning , EGOROV, Anton Yurevitch
IPC分类号： H01S5/343
CPC分类号： H01S5/343 , B82Y20/00 , H01S5/32366 , H01S5/32375 , H01S5/34346 , H01S5/34353
摘要： The active layer (1) and the barrier layers (2) contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of Inx Ga1-x Asy N1-y with varying factors x and y, where, in particular, x = 0 and y = 1.

2. 发明公开

EP0896406A3 Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor 有权
标题翻译：一种半导体激光器件，使用相同的和制造方法的光通信系统
公开(公告)号：EP0896406A3
公开(公告)日：2000-11-08
申请号：EP98114940.4
申请日：1998-08-07
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Kitoh, Masahiro , Ishino, Masato , Matsui, Yasushi
IPC分类号： H01S3/19 , H01S3/085 , C30B25/02 , C30B29/40
CPC分类号： H01S5/343 , B82Y20/00 , C30B25/02 , C30B29/40 , H01S5/021 , H01S5/0218 , H01S5/18311 , H01S5/2275 , H01S5/32 , H01S5/3235 , H01S5/32375 , H01S5/34306 , H01S5/34346 , H01S2304/04
摘要： The semiconductor laser device of the present invention includes a GaAs substrate and a multi-layer structure formed on the GaAs substrate. The multi-layer structure includes an active layer for emitting light. The active layer includes an InN x As y P 1-x-y (where 0

3. 发明公开

EP1842268A2 III/V-HALBLEITER 有权
标题翻译： III / V-HALBLEITER
公开(公告)号：EP1842268A2
公开(公告)日：2007-10-10
申请号：EP06705870.1
申请日：2006-01-26
申请人： Philipps-Universität Marburg
发明人： KUNERT, Bernardette , KOCH, Jörg , REINHARD, Stefan , VOLZ, Kerstin , STOLZ, Wolfgang
IPC分类号： H01S5/026 , H01S5/323
CPC分类号： H01S5/026 , H01S5/021 , H01S5/0261 , H01S5/0265 , H01S5/323 , H01S5/32366 , H01S5/32375
摘要： The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer based on doped Si or doped GaP and a III/V semiconductor arranged on said carrier layer, with the composition Gaxlny-NaAsbPcSbd, where x = 70 - 100 mol, y = 0 - 30 mol %, a = 0.5 - 15 mol %, b = 67.5 99.5 mol %, c = 0 32.0 mol %, and d = 0 - 15 mol %. According to the invention, x and y always add up to 100 mol %, and a, b, c and d always add up to 100 mol %. The ratio of the sums of x and y to a, b, c and d is essentially equal to 1:1. The invention also relates to a method for the production of said semiconductor structure, and to the use thereof for producing light-emitting diodes and laser diodes, or modulator and detector structures that are monolithically integrated into integrated circuits based on Si or GaP technology.
摘要翻译：本发明涉及一种单片集成半导体结构，其包括基于掺杂的Si或掺杂GaP的载流子层和布置在所述载体层上的III / V半导体，其中组成为Ga x 其中x = 70-100摩尔，y为0〜100摩尔，y为1〜 = 0〜30摩尔％，a = 0.5〜15摩尔％，b = 67.5 99.5摩尔％，c = 32.0摩尔％，d = 0〜15摩尔％。根据本发明，x和y总是加到100mol％，a，b，c和d总是加起来为100mol％。 x和y之和与a，b，c和d的比值基本上等于1:1。本发明还涉及一种用于制造所述半导体结构的方法及其用于制造基于Si或GaP技术单片集成到集成电路中的发光二极管和激光二极管或调制器和检测器结构的用途。

4. 发明授权

EP0896406B1 Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor 有权
标题翻译：一种半导体激光器件，使用相同的和制造方法的光通信系统
公开(公告)号：EP0896406B1
公开(公告)日：2006-06-07
申请号：EP98114940.4
申请日：1998-08-07
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kitoh, Masahiro , Ishino, Masato , Matsui, Yasushi
IPC分类号： H01S5/10 , H01S5/32 , C30B25/02 , C30B29/40
CPC分类号： H01S5/343 , B82Y20/00 , C30B25/02 , C30B29/40 , H01S5/021 , H01S5/0218 , H01S5/18311 , H01S5/2275 , H01S5/32 , H01S5/3235 , H01S5/32375 , H01S5/34306 , H01S5/34346 , H01S2304/04

5. 发明公开

EP0896406A2 Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor 有权
标题翻译：一种半导体激光器件，使用相同的和制造方法的光通信系统
公开(公告)号：EP0896406A2
公开(公告)日：1999-02-10
申请号：EP98114940.4
申请日：1998-08-07
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Kitoh, Masahiro , Ishino, Masato , Matsui, Yasushi
IPC分类号： H01S3/19 , H01S3/085 , C30B25/02 , C30B29/40
CPC分类号： H01S5/343 , B82Y20/00 , C30B25/02 , C30B29/40 , H01S5/021 , H01S5/0218 , H01S5/18311 , H01S5/2275 , H01S5/32 , H01S5/3235 , H01S5/32375 , H01S5/34306 , H01S5/34346 , H01S2304/04
摘要： The semiconductor laser device of the present invention includes a GaAs substrate and a multi-layer structure formed on the GaAs substrate. The multi-layer structure includes an active layer for emitting light. The active layer includes an InN x As y P 1-x-y (where 0
摘要翻译：本发明的半导体激光器件包括GaAs衬底和形成在所述GaAs衬底的多层结构。多层结构包括：用于发射光的有源层。所述有源层包括在InNxAsyP1-X-Y（其中0

6. 发明公开

EP3198689A1 COMPACT, POWER-EFFICIENT STACKED BROADBAND OPTICAL EMITTERS 有权
标题翻译：紧凑，高效堆叠宽带光学发射器
公开(公告)号：EP3198689A1
公开(公告)日：2017-08-02
申请号：EP15845489.2
申请日：2015-09-23
申请人： Heptagon Micro Optics Pte. Ltd.
发明人： RIEL, Peter , ROENTGEN, Peter
IPC分类号： H01S3/091 , H01S3/16 , H01S5/10 , H01S5/30
CPC分类号： G01J3/10 , G01J3/06 , G01J3/108 , G01J3/26 , H01S3/094096 , H01S5/0071 , H01S5/0287 , H01S5/041 , H01S5/1096 , H01S5/183 , H01S5/32375 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3438 , H01S5/4043 , H01S5/4087
摘要： The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected wavelength or narrow range of wavelengths to pass through.
摘要翻译：本公开描述了包括半导体层堆叠的宽带光发射源，其中每个半导体层可操作以发射不同相应波长的光; 光源，其可操作以提供用于从所述堆叠体激发的光子发射的光学泵浦; 其中所述半导体层顺序地布置在所述堆叠中，使得所述半导体层中的第一半导体层最靠近所述光源，并且所述半导体层中的最后一个半导体层距离所述光源最远，并且其中所述半导体层中的每个特定半导体层是对于由比特定半导体层更靠近光源的其他半导体层产生的光至少部分透明。本公开还描述了包括宽带光发射装置的各种光谱仪，并且可选地包括可操作以允许所选波长或窄波长范围通过的可调波长滤波器。

7. 发明公开

EP1257026A2 Semiconductor laser device having a high characteristic temperature 审中-公开
标题翻译：半导体激光器具有高特性温度
公开(公告)号：EP1257026A2
公开(公告)日：2002-11-13
申请号：EP02009173.2
申请日：2002-04-24
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Shimizu, Hitoshi , Kumada, Kouji , Iwai, Norihiro
IPC分类号： H01S5/323
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/2068 , H01S5/3209 , H01S5/32366 , H01S5/32375 , H01S5/3403 , H01S5/34306 , H01S5/34353
摘要： A semiconductor laser device includes a resonant cavity formed on a GaAs substrate (62), the resonant cavity including a quantum well (QW) active layer structure (70) having a GaInNAs(Sb) well layer (70b) and a pair of barrier layers (70a, 70c). The QW structure (70) has a conduction band offset energy (ΔEc) equal to or higher than 350 milli-electron-volts (meV) between the well layer (70b) and the barrier layers (70a, 70c), and each of the barrier layers (70a, 70c) a tensile strain equal to or lower than 2.5%.

8. 发明公开

EP3198689A4 COMPACT, POWER-EFFICIENT STACKED BROADBAND OPTICAL EMITTERS 有权
公开(公告)号：EP3198689A4
公开(公告)日：2018-05-23
申请号：EP15845489
申请日：2015-09-23
申请人： HEPTAGON MICRO OPTICS PTE LTD
发明人： RIEL PETER , ROENTGEN PETER
IPC分类号： H01S3/091 , G01J3/06 , G01J3/10 , G01J3/26 , H01S3/094 , H01S3/16 , H01S5/00 , H01S5/028 , H01S5/04 , H01S5/10 , H01S5/183 , H01S5/30 , H01S5/323 , H01S5/343 , H01S5/40
CPC分类号： G01J3/10 , G01J3/06 , G01J3/108 , G01J3/26 , H01S3/094096 , H01S5/0071 , H01S5/0287 , H01S5/041 , H01S5/1096 , H01S5/183 , H01S5/32375 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3438 , H01S5/4043 , H01S5/4087
摘要： The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected wavelength or narrow range of wavelengths to pass through.

9. 发明公开

EP1257026A3 Semiconductor laser device having a high characteristic temperature 审中-公开
标题翻译： Halbleiterlaser mit einer hohen charakteristischen Temperatur
公开(公告)号：EP1257026A3
公开(公告)日：2004-09-29
申请号：EP02009173.2
申请日：2002-04-24
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Shimizu, Hitoshi , Kumada, Kouji , Iwai, Norihiro
IPC分类号： H01S5/323 , H01S5/343 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/2068 , H01S5/3209 , H01S5/32366 , H01S5/32375 , H01S5/3403 , H01S5/34306 , H01S5/34353
摘要： A semiconductor laser device includes a resonant cavity formed on a GaAs substrate (62), the resonant cavity including a quantum well (QW) active layer structure (70) having a GaInNAs(Sb) well layer (70b) and a pair of barrier layers (70a, 70c). The QW structure (70) has a conduction band offset energy (ΔEc) equal to or higher than 350 milli-electron-volts (meV) between the well layer (70b) and the barrier layers (70a, 70c), and each of the barrier layers (70a, 70c) a tensile strain equal to or lower than 2.5%.
摘要翻译：半导体激光器件包括形成在GaAs衬底（62）上的谐振腔，所述谐振腔包括具有GaInNA（Sb）阱层（70b）和一对势垒层（70b）的量子阱（QW）有源层结构（70）（70a，70c）。 QW结构（70）具有等于或高于阱层（70b）和势垒层（70a，70c）之间的350毫电子伏特（meV）的导带偏移能量（DELTA Ec），并且阻挡层（70a，70c）的拉伸应变等于或小于2.5％。

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