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1. 发明授权

EP2898553B1 OPTOELECTRONIC DEVICE 有权转让
公开(公告)号：EP2898553B1
公开(公告)日：2018-11-14
申请号：EP13766635.0
申请日：2013-09-17
申请人： Oxford University Innovation Limited
发明人： SNAITH, Henry, James , CROSSLAND, Edward, James, William , HEY, Andrew , BALL, James , LEE, Michael , DOCAMPO, Pablo
IPC分类号： H01L51/42 , C23C14/06
CPC分类号： H01L31/036 , C23C14/06 , H01L31/022466 , H01L31/035272 , H01L31/0725 , H01L31/1864 , H01L31/1884 , H01L51/0026 , H01L51/0032 , H01L51/0037 , H01L51/422 , H01L51/4226 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

2. 发明授权

EP2994946B1 METHOD OF MANUFACTURING PHOTOVOLTAIC DEVICE USING PEROVSKITES 有权
公开(公告)号：EP2994946B1
公开(公告)日：2018-07-04
申请号：EP14730176.6
申请日：2014-04-30
申请人： Swansea University
发明人： CHARBONNEAU, Cecile , CARNIE, Matthew
IPC分类号： H01L51/42 , H01L51/00
CPC分类号： H01G9/2031 , C09D5/24 , H01G9/0029 , H01G9/2027 , H01L51/0003 , H01L51/422 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： The photovoltaic device is formed by coating a substrate with a transparent conducting oxide and then this layer is coated with a dioxide layer. The dioxide layer is then coated in a single step with a precursor solution including metal oxide nanoparticles and perovskites and this precursor can be heated to form a scaffold having a perovskite light absorber and electron transporter. A conductor is added to form a connection with the scaffold and it is envisaged that because a single step relatively low temperature process is used to form the scaffold then this can be painted onto a surface and cured in situ making it a very economical process.

3. 发明公开

EP3267504A1 PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL AND COMPOSITION 审中-公开
标题翻译：光电转换元件，太阳能电池和组合物
公开(公告)号：EP3267504A1
公开(公告)日：2018-01-10
申请号：EP16761497.3
申请日：2016-02-24
申请人： FUJIFILM Corporation
发明人： SATOU, Hirotaka , KOBAYASHI, Katsumi , SHIROKANE, Kenji , ISE, Toshihiro
IPC分类号： H01L51/44 , H01L51/46
CPC分类号： H01G9/2059 , H01G9/2027 , H01L51/0047 , H01L51/0094 , H01L51/422 , Y02E10/549 , Y02P70/521
摘要： Provided are: a photoelectric conversion element that has a first electrode, which has upon a conductive support body a photosensitive layer that includes a light absorbing agent, and a second electrode (2), which faces the first electrode (1), wherein the light absorbing agent includes a compound that has a perovskite crystalline structure having an organic cation, a cation of a metal atom other than a group 1 element of the periodic table, and an anion, and at least a portion of the organic cation that constitutes said compound is an organic cation having a silyl group; and a solar cell that uses said photoelectric conversion element. Provided is a composition that contains a compound represented by the formula (1a), and a metal halide. R 1 3 Si-L-NR 2 3 Hal Formula (1a) In the formula, R 1 , R 2 , and L are specified groups. Hal represents a halogen atom.
摘要翻译：提供：光电转换元件，其具有第一电极和第二电极，所述第一电极在导电支撑体上具有包含光吸收剂的光敏层，所述第二电极与所述第一电极相对，其中，所述光所述吸收剂包括具有钙钛矿结晶结构的化合物，所述钙钛矿结晶结构具有有机阳离子，周期表第1族元素以外的金属原子的阳离子和阴离子，并且构成所述化合物的有机阳离子的至少一部分是具有甲硅烷基的有机阳离子; 以及使用所述光电转换元件的太阳能电池。提供含有式（1a）所示的化合物和金属卤化物的组合物。式（1a）R13Si-L-NR23Hal式中，R1，R2和L是特定基团。 Hal代表卤素原子。

4. 发明公开

EP3167096A1 TWO-STEP DEPOSITION PROCESS 有权
标题翻译：两步沉积工艺
公开(公告)号：EP3167096A1
公开(公告)日：2017-05-17
申请号：EP15741256.0
申请日：2015-07-09
申请人： Oxford University Innovation Limited
发明人： SNAITH, Henry J. , EPERON, Giles E. , BALL, James M.
IPC分类号： C23C14/58 , C23C14/06 , C23C14/24 , C23C14/12 , C23C14/00
CPC分类号： H01G9/2009 , C23C14/0021 , C23C14/0694 , C23C14/12 , C23C14/24 , C23C14/5846 , C23C14/5893 , C23C16/409 , C23C16/45553 , C23C16/45557 , H01G9/2027 , H01L51/0002 , H01L51/0032 , H01L51/0056 , H01L51/006 , H01L51/0077 , H01L51/422 , H01L51/4226 , H01L2031/0344 , H01L2251/306 , Y02E10/549 , Y02P70/521
摘要： The present invention provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises: (i) exposing a substrate to a vapour comprising a first precursor compound in a first chamber to produce a layer of the first precursor compound on the substrate; and (ii) exposing the layer of the first precursor compound to a vapour comprising a second precursor compound in a second chamber to produce the layer of a crystalline material, wherein the pressure in the second chamber is above high vacuum. The invention also provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises exposing a layer of a first precursor compound on a substrate to a vapour comprising a second precursor compound in a chamber to produce the layer of a crystalline material, wherein the pressure in the chamber is greater than high vacuum and less than atmospheric pressure. The invention also provides a process for producing a semiconductor device comprising a layer of a crystalline material, which process comprises producing said layer of a crystalline material by a process as according to the invention.
摘要翻译：本发明提供了一种生产包含钙钛矿或六卤代金属化合物的晶体材料层的方法，该方法包括：（i）将衬底暴露于包含第一室中的第一前体化合物的蒸气中以产生第一层前体化合物在基材上; 和（ii）在第二室中将第一前体化合物层暴露于包含第二前体化合物的蒸气中以产生结晶材料层，其中第二室中的压力高于高真空。本发明还提供了一种制备包含钙钛矿或六卤代金属化合物的结晶材料层的方法，该方法包括将衬底上的第一前体化合物层暴露于室中的包含第二前体化合物的蒸气以产生层的结晶材料，其中腔室中的压力大于高真空且小于大气压力。本发明还提供了用于制造包含结晶材料层的半导体器件的方法，该方法包括通过根据本发明的方法制造所述结晶材料层。

5. 发明公开

EP3098871A4 PEROVSKITE PHOTOELECTRIC FUNCTIONAL MATERIAL MODIFIED WITH AMPHIPATHIC MOLECULE AND USE THEREOF 有权转让
标题翻译： ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON ON
公开(公告)号：EP3098871A4
公开(公告)日：2017-01-25
申请号：EP14880101
申请日：2014-03-19
申请人： UNIV HUAZHONG SCIENCE TECH
发明人： HAN HONGWEI , MEI ANYI
IPC分类号： H01L51/46 , C01G21/00 , C01G21/16 , H01G9/20
CPC分类号： C09K9/02 , C01G3/006 , C01G17/006 , C01G19/006 , C01G21/006 , C01P2002/34 , C01P2006/40 , C09K2211/10 , H01L51/422 , H01L51/4226 , H01L51/56 , H01L2031/0344 , H01L2251/303 , Y02E10/549
摘要： An M z A y BX z+y+2 perovskite-based photoelectric functional material modified with an organic amphipathic molecule and a preparation method and the use thereof. The functional material takes an ABX 3 perovskite material as a matrix and takes an organic amphipathic molecule M as a modification component, and the general chemical formula of the functional material is shown as M z A y BX z+y+2 . The matrix material and modification material used are low in cost and rich in raw materials; in addition, the preparation method can adopt a full-solution method, the preparation process is simple, without expensive equipment and instruments, at the same time the crystallization property of the obtained perovskite material is significantly improved, and the photoelectric conversion efficiency and stability of a solar cell prepared therefrom are greatly improved.
摘要翻译：用有机两亲分子改性的M z A y BX z + y + 2钙钛矿型光电功能材料及其制备方法及其用途。功能材料采用ABX 3钙钛矿材料作为基质，以有机两亲分子M为改性成分，功能材料的一般化学式为M z A y BX z + y + 2。使用的基体材料和改性材料成本低，原料丰富; 另外，制备方法可采用全溶液法，制备工艺简单，无需昂贵的设备和仪器，同时得到的钙钛矿材料的结晶性能明显提高，光电转换效率和稳定性由此制备的太阳能电池大大改善。

6. 发明公开

EP3098871A1 PEROVSKITE PHOTOELECTRIC FUNCTIONAL MATERIAL MODIFIED WITH AMPHIPATHIC MOLECULE AND USE THEREOF 有权转让
标题翻译：具有两亲分子及其用途光电管钙钛矿功能材料
公开(公告)号：EP3098871A1
公开(公告)日：2016-11-30
申请号：EP14880101.2
申请日：2014-03-19
申请人： Huazhong University of Science and Technology
发明人： HAN, Hongwei , MEI, Anyi
IPC分类号： H01L51/46 , H01G9/20
CPC分类号： C09K9/02 , C01G3/006 , C01G17/006 , C01G19/006 , C01G21/006 , C01P2002/34 , C01P2006/40 , C09K2211/10 , H01L51/422 , H01L51/4226 , H01L51/56 , H01L2031/0344 , H01L2251/303 , Y02E10/549
摘要： An M z A y BX z+y+2 perovskite-based photoelectric functional material modified with an organic amphipathic molecule and a preparation method and the use thereof. The functional material takes an ABX 3 perovskite material as a matrix and takes an organic amphipathic molecule M as a modification component, and the general chemical formula of the functional material is shown as M z A y BX z+y+2 . The matrix material and modification material used are low in cost and rich in raw materials; in addition, the preparation method can adopt a full-solution method, the preparation process is simple, without expensive equipment and instruments, at the same time the crystallization property of the obtained perovskite material is significantly improved, and the photoelectric conversion efficiency and stability of a solar cell prepared therefrom are greatly improved.

7. 发明公开

EP2898553A1 OPTOELECTRONIC DEVICE 有权转让
标题翻译： OPTOELEKTRONISCHE VORRICHTUNG
公开(公告)号：EP2898553A1
公开(公告)日：2015-07-29
申请号：EP13766635.0
申请日：2013-09-17
申请人： Isis Innovation Limited
发明人： SNAITH, Henry, James , CROSSLAND, Edward, James, William , HEY, Andrew , BALL, James , LEE, Michael , DOCAMPO, Pablo
IPC分类号： H01L51/42 , H01L31/06
CPC分类号： H01L31/036 , C23C14/06 , H01L31/022466 , H01L31/035272 , H01L31/0725 , H01L31/1864 , H01L31/1884 , H01L51/0026 , H01L51/0032 , H01L51/0037 , H01L51/422 , H01L51/4226 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.
摘要翻译：本发明提供了包含光活性区的光电器件，该光活性区包括：包含至少一个n型层的n型区; 包括至少一个p型层的p型区域; 并且配置在n型区域和p型区域之间：没有孔隙率的钙钛矿半导体层。钙钛矿半导体通常是光吸收的。在一些实施方案中，设置在n型区域和p型区域之间是：（i）包含通常是多孔的支架材料的第一层和通常设置在支架孔中的钙钛矿半导体材料; 和（ii）设置在所述第一层上的覆盖层，所述覆盖层是没有开放孔隙率的所述钙钛矿半导体层，其中所述覆盖层中的钙钛矿半导体与所述第一层中的钙钛矿半导体接触。具有开放孔隙率的钙钛矿半导体层（其可以是所述覆盖层）通常与n型区域或p型区域形成平面异质结。本发明还提供了生产这种通常涉及钙钛矿的溶液沉积或气相沉积的光电器件的方法。在一个实施方案中，该方法是低温过程; 例如，整个过程可以在不超过150℃的温度或温度下进行。

8. 发明公开

EP2685553A4 PIGMENT FOR PHOTOELECTRIC CONVERTER, AND PHOTOELECTRIC CONVERSION FILM, ELECTRODE, AND SOLAR CELL USING SAME 有权
标题翻译：颜料相片电转换器和光电气转换膜，电极和太阳能电池，SO
公开(公告)号：EP2685553A4
公开(公告)日：2014-08-27
申请号：EP12755461
申请日：2012-03-06
申请人： UNIV TOKYO , TANAKA PRECIOUS METAL IND
发明人： SEGAWA HIROSHI , KINOSHITA TAKUMI , FUJISAWA JUN-ICHI , NAKAZAKI JOTARO , UCHIDA SATOSHI , KUBO TAKAYA
IPC分类号： H01M14/00 , C09B57/00 , H01G9/20 , H01L31/04 , H01L51/00
CPC分类号： H01G9/2004 , C07F15/0053 , C09B57/10 , H01G9/2013 , H01G9/2031 , H01G9/2059 , H01L31/0725 , H01L51/0086 , H01L51/422 , Y02E10/542 , Y02E10/549

9. 发明公开

EP2727154A2 A METHOD AND APPARATUS FOR DETECTING INFRARED RADIATION WITH GAIN 有权
标题翻译： VERFAHREN UND VORRICHTUNG ZUR DETEKTION VON INFRAROTSTRAHLUNG MITVERSTÄRKUNG
公开(公告)号：EP2727154A2
公开(公告)日：2014-05-07
申请号：EP12804913.7
申请日：2012-07-02
申请人： University of Florida Research Foundation, Inc. , Nanoholdings LLC
发明人： SO, Franky , KIM, Do, Young , LEE, Jae, Woong , PRADHAN, Bhabendra, K.
IPC分类号： H01L31/10 , H01L51/50
CPC分类号： H01L27/3227 , H01L27/288 , H01L31/022466 , H01L31/022475 , H01L31/022491 , H01L31/035218 , H01L31/09 , H01L31/143 , H01L31/1804 , H01L31/1808 , H01L31/184 , H01L51/0047 , H01L51/0059 , H01L51/0078 , H01L51/0084 , H01L51/4213 , H01L51/422 , H01L51/442 , H01L51/5048 , H01L51/56 , H01L2031/0344 , H04N5/33 , Y02E10/549
摘要： Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunneling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLED coupled to the photodetector.
摘要翻译：光探测器及其制造方法以及使用该光检测器的方法来检测辐射。光检测器可以包括第一电极，光敏层，电子阻挡层/隧道层和第二电极。还描述了红外至可见上转换装置，其制造方法以及使用该上变换装置的方法来检测辐射。红外到可见的上变频装置可以包括耦合到光电检测器的光电检测器和OLDE。

10. 发明授权

EP1631996B2 ORGANISCHE SOLARZELLE MIT EINER ZWISCHENSCHICHT MIT ASYMMETRISCHEN TRANSPORTEIGENSCHAFTEN 有权
标题翻译：与不对称输运性质的中间层有机太阳能电池
公开(公告)号：EP1631996B2
公开(公告)日：2013-08-07
申请号：EP04734848.7
申请日：2004-05-26
申请人： Merck Patent GmbH
发明人： BRABEC, Christoph , WALDAUF, Christoph
IPC分类号： H01L51/30
CPC分类号： H01L51/44 , B82Y10/00 , H01L51/0036 , H01L51/0037 , H01L51/0046 , H01L51/0047 , H01L51/0053 , H01L51/0078 , H01L51/0092 , H01L51/422 , H01L51/4246 , H01L51/4253 , H01L51/4273 , H01L51/441 , Y02E10/549

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