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    • 1. 发明公开
    • OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES
    • 包含多孔支架材料和珀洛齐克斯的光电子器件
    • EP3029696A1
    • 2016-06-08
    • EP16152624.9
    • 2013-05-20
    • Isis Innovation Limited
    • SNAITH, HenryLEE, Michael
    • H01G9/20H01L51/42
    • H01L51/4213H01L31/0324H01L51/0032H01L51/422H01L51/4226H01L2031/0344Y02E10/549
    • The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.
    • 本发明提供了一种光电子器件,其包括:(i)多孔介电支架材料; 和(ii)与支架材料接触的具有小于或等于3.0eV的带隙的半导体。 典型地,可以是钙钛矿的半导体设置在多孔介电支架材料的表面上,使得其被支撑在支架内的孔的表面上。 在一个实施例中,光电子器件是包括光敏层的光电子器件,其中光敏层包括:(a)所述多孔介电支架材料; (b)所述半导体; 和(c)电荷传输材料。 本发明进一步提供了作为光电子器件中的光敏材料的用途:(i)多孔介电支架材料; 和(ii)与支架材料接触的具有小于或等于3.0eV的带隙的半导体。 进一步提供的是使用包含以下的层:(i)多孔介电支架材料; 和(ii)与所述支架材料接触的具有小于或等于3.0eV的带隙的半导体; 作为光电子器件中的光敏层。 另一方面,本发明提供了用于光电子器件的光敏层,其包含(a)多孔介电支架材料; (b)与脚手架材料接触的带隙小于或等于3.0eV的半导体; 和(c)电荷传输材料。