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1. 发明公开

EP3167096A1 TWO-STEP DEPOSITION PROCESS 有权
标题翻译：两步沉积工艺
公开(公告)号：EP3167096A1
公开(公告)日：2017-05-17
申请号：EP15741256.0
申请日：2015-07-09
申请人： Oxford University Innovation Limited
发明人： SNAITH, Henry J. , EPERON, Giles E. , BALL, James M.
IPC分类号： C23C14/58 , C23C14/06 , C23C14/24 , C23C14/12 , C23C14/00
CPC分类号： H01G9/2009 , C23C14/0021 , C23C14/0694 , C23C14/12 , C23C14/24 , C23C14/5846 , C23C14/5893 , C23C16/409 , C23C16/45553 , C23C16/45557 , H01G9/2027 , H01L51/0002 , H01L51/0032 , H01L51/0056 , H01L51/006 , H01L51/0077 , H01L51/422 , H01L51/4226 , H01L2031/0344 , H01L2251/306 , Y02E10/549 , Y02P70/521
摘要： The present invention provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises: (i) exposing a substrate to a vapour comprising a first precursor compound in a first chamber to produce a layer of the first precursor compound on the substrate; and (ii) exposing the layer of the first precursor compound to a vapour comprising a second precursor compound in a second chamber to produce the layer of a crystalline material, wherein the pressure in the second chamber is above high vacuum. The invention also provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises exposing a layer of a first precursor compound on a substrate to a vapour comprising a second precursor compound in a chamber to produce the layer of a crystalline material, wherein the pressure in the chamber is greater than high vacuum and less than atmospheric pressure. The invention also provides a process for producing a semiconductor device comprising a layer of a crystalline material, which process comprises producing said layer of a crystalline material by a process as according to the invention.
摘要翻译：本发明提供了一种生产包含钙钛矿或六卤代金属化合物的晶体材料层的方法，该方法包括：（i）将衬底暴露于包含第一室中的第一前体化合物的蒸气中以产生第一层前体化合物在基材上; 和（ii）在第二室中将第一前体化合物层暴露于包含第二前体化合物的蒸气中以产生结晶材料层，其中第二室中的压力高于高真空。本发明还提供了一种制备包含钙钛矿或六卤代金属化合物的结晶材料层的方法，该方法包括将衬底上的第一前体化合物层暴露于室中的包含第二前体化合物的蒸气以产生层的结晶材料，其中腔室中的压力大于高真空且小于大气压力。本发明还提供了用于制造包含结晶材料层的半导体器件的方法，该方法包括通过根据本发明的方法制造所述结晶材料层。

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