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    • 1. 发明公开
    • DIELECTRIC LAYER RESPONSE-BASED FIELD EFFECT TRANSISTOR PHOTODETECTOR
    • EP4280289A1
    • 2023-11-22
    • EP21919053.5
    • 2021-12-03
    • Huazhong University of Science and Technology
    • MEI, AnyiHAN, Hongwei
    • H01L31/101H01L27/14
    • The present invention relates to the field of photodetectors. Specifically, disclosed is a dielectric layer response-based field effect transistor photodetector, comprising a gate, a photoelectric response composite dielectric layer, a carrier transport layer, a source, and a drain. The composite dielectric layer is formed by compounding a photoelectric response dielectric and a charge blocking insulating dielectric; the carrier transport layer is used for transporting electrons or holes, the photoelectric response dielectric is used for absorbing light under illumination to generate electrons, holes or excitons, and the charge blocking insulating dielectric is used for limiting passage of the electrons, holes or excitons. The generation of photogenerated electrons, holes or excitons in the composite dielectric layer and the movement of the photogenerated electrons, holes or excitons limited within the photoelectric response dielectric cause the equivalent permittivity of the composite dielectric layer to change, causing changes in carrier concentration and conductivity of the carrier transport layer and achieving photoelectric detection according to a change in current between the source and the drain before and after illumination. The present invention significantly improves the flexibility of design of photoelectric detection devices, and helps to further implement a high-performance and low-cost photodetector.