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1. 发明授权

EP3130574B1 LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION, PIEZOELECTRIC ELEMENT USING SAME, PRODUCTION METHOD FOR LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION 有权
公开(公告)号：EP3130574B1
公开(公告)日：2018-10-17
申请号：EP15776632.0
申请日：2015-03-05
申请人： NGK Sparkplug Co., Ltd.
发明人： KOZUKA, Hisashi , YAMADA, Hideto , MATSUOKA, Takayuki , KITAMURA, Kazuaki , YAMAZAKI, Masato , KURAHASHI, Toshiaki , KASASHIMA, Takashi , OKIMURA, Yasuyuki , OHBAYASHI, Kazushige
IPC分类号： C04B35/00 , H01L41/187 , H01L41/39 , H01L41/43
CPC分类号： H01L41/1873 , C04B35/495 , C04B35/64 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3234 , C04B2235/3244 , C04B2235/3255 , C04B2235/3267 , C04B2235/3272 , C04B2235/3277 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/604 , C04B2235/763 , C04B2235/768 , C04B2235/79 , C04B2235/80 , C04B2235/96 , H01L41/047 , H01L41/43
摘要： Provided is a lead-free piezoelectric ceramic composition having high piezoelectric properties. The lead-free piezoelectric ceramic composition fulfils a molar ratio (Na/K) for Na (sodium) and K (potassium) in the main phase thereof of 0.40 direction when the main phase is expressed as a pseudo cubic crystal.

2. 发明公开

EP3364471A1 MULTILAYER SUBSTRATE WITH PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT AND METHOD FOR MANUFACTURING SAME 有权转让
公开(公告)号：EP3364471A1
公开(公告)日：2018-08-22
申请号：EP16855387.3
申请日：2016-10-11
申请人： Sciocs Company Limited , Sumitomo Chemical Company Limited
发明人： SHIBATA, Kenji , WATANABE, Kazutoshi , HORIKIRI, Fumimasa
IPC分类号： H01L41/187 , C01G33/00 , C23C14/08 , H01L41/316 , H01L41/332
CPC分类号： H01L41/18 , B41J2/14201 , C01G33/00 , C23C14/08 , H01L41/0533 , H01L41/0805 , H01L41/1873 , H01L41/316 , H01L41/318 , H03H9/02031 , H03H9/02574
摘要： There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K 1-x Na x )NbO 3 . (0

4. 发明授权

EP3053896B1 MULTILAYER PIEZOELECTRIC CERAMIC ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING MULTILAYER PIEZOELECTRIC CERAMIC ELECTRONIC COMPONENT 有权
公开(公告)号：EP3053896B1
公开(公告)日：2018-07-18
申请号：EP14848100.5
申请日：2014-09-26
申请人： Murata Manufacturing Co., Ltd.
发明人： ISHII Hideki , KAWADA Shinichiro , HAYASHI Hiroyuki , OKUZAWA Tadashi , SUZUKI Shoichiro
IPC分类号： C04B35/495 , H01L41/083 , H01L41/187 , H01L41/273 , H01L41/43 , H01L41/047
CPC分类号： H01L41/1873 , C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3262 , C04B2235/3272 , C04B2235/3286 , C04B2235/6025 , C04B2235/768 , H01L41/0471 , H01L41/0477 , H01L41/273 , H01L41/277 , H01L41/43
摘要： A multilayer sintered body 1 is a sintered form of alternately stacked Ni-based inner electrodes 3 and piezoelectric ceramic layers. The piezoelectric ceramic layers contain a perovskite compound containing Nb, K, Na, and Li, at least one element M1 selected from Nd and Dy, and at least one element M2 selected from Ga and Al, the perovskite compound being the main ingredient. The element M2 content is 0.071 parts by mole or less per 1 part by mole of the Nb in a solution obtained through a dissolution process. This multilayer piezoelectric ceramic electronic component is manufactured through the cofiring of conductive films as a precursor of the inner electrodes 3 and ceramic green sheets as a precursor of the piezoelectric ceramic layers in a reducing atmosphere in which the oxidation of Ni is inhibited. These provide a highly reliable multilayer piezoelectric ceramic electronic component and a method for manufacturing it.

5. 发明公开

EP3130574A4 LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION, PIEZOELECTRIC ELEMENT USING SAME, PRODUCTION METHOD FOR LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION 有权
公开(公告)号：EP3130574A4
公开(公告)日：2018-03-14
申请号：EP15776632
申请日：2015-03-05
申请人： NGK SPARK PLUG CO
发明人： KOZUKA HISASHI , YAMADA HIDETO , MATSUOKA TAKAYUKI , KITAMURA KAZUAKI , YAMAZAKI MASATO , KURAHASHI TOSHIAKI , KASASHIMA TAKASHI , OKIMURA YASUYUKI , OHBAYASHI KAZUSHIGE
IPC分类号： C04B35/00 , H01L41/187 , H01L41/39 , H01L41/43
CPC分类号： H01L41/1873 , C04B35/495 , C04B35/64 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3234 , C04B2235/3244 , C04B2235/3255 , C04B2235/3267 , C04B2235/3272 , C04B2235/3277 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/604 , C04B2235/763 , C04B2235/768 , C04B2235/79 , C04B2235/80 , C04B2235/96 , H01L41/047 , H01L41/43
摘要： Provided is a lead-free piezoelectric ceramic composition having high piezoelectric properties. The lead-free piezoelectric ceramic composition fulfils a molar ratio (Na/K) for Na (sodium) and K (potassium) in the main phase thereof of 0.40 direction when the main phase is expressed as a pseudo cubic crystal.

6. 发明公开

EP3279955A1 METHOD FOR PRODUCING FERROELECTRIC THIN FILM ELEMENT 有权
标题翻译：制造铁电薄膜元件的方法
公开(公告)号：EP3279955A1
公开(公告)日：2018-02-07
申请号：EP16772062.2
申请日：2016-03-02
申请人： Sumitomo Chemical Company, Ltd
发明人： HORIKIRI Fumimasa , SHIBATA Kenji , WATANABE Kazutoshi , SUENAGA Kazufumi
IPC分类号： H01L41/332 , C23C14/34 , H01L21/304 , H01L41/187 , H01L41/22 , H01L41/316
CPC分类号： H01L41/1873 , C23C14/34 , C23C14/35 , H01L21/02071 , H01L21/0209 , H01L21/304 , H01L37/025 , H01L41/0477 , H01L41/29 , H01L41/316 , H01L41/332 , H01L41/338 , H01L41/43
摘要： There is provided a method for manufacturing a ferroelectric thin film device including: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate on the lower electrode film; a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; and a thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step. The predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M.
摘要翻译：提供了一种用于制造铁电薄膜器件的方法，包括：下电极膜形成步骤，在基板上形成下电极膜; 在下部电极膜上形成由铌酸钾钠构成的铁电薄膜的铁电薄膜形成工序; 通过蚀刻将铁电薄膜成形为期望的微图案的铁电薄膜蚀刻步骤; 以及薄膜层叠基板清洗步骤，在铁电薄膜刻蚀步骤之后，用预定的清洗液清洗基板，从而提供具有期望的微图案的铁电薄膜。规定的清洗液是含有氢氟酸和氟化铵的混合溶液，混合液中的氢氟酸的摩尔浓度为0.5M以上且小于5μM。

7. 发明公开

EP3276688A1 FERROELECTRIC THIN FILM ELEMENT MANUFACTURING METHOD 审中-公开
标题翻译：铁电薄膜元件制造方法
公开(公告)号：EP3276688A1
公开(公告)日：2018-01-31
申请号：EP16768326.7
申请日：2016-03-02
申请人： Sumitomo Chemical Company Limited
发明人： HORIKIRI Fumimasa , SHIBATA Kenji , WATANABE Kazutoshi , SUENAGA Kazufumi
IPC分类号： H01L41/29 , H01L21/3065 , H01L21/8246 , H01L27/105 , H01L41/187 , H01L41/316 , H01L41/332
CPC分类号： H01L21/02197 , H01J2237/3341 , H01L21/02266 , H01L21/31111 , H01L21/32136 , H01L21/32139 , H01L21/78 , H01L22/26 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/65 , H01L37/025 , H01L41/0477 , H01L41/187 , H01L41/1873 , H01L41/29 , H01L41/314 , H01L41/332
摘要： This method for manufacturing a ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate on the lower electrode film; an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; and an upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film. The upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold.
摘要翻译：该制造铁电薄膜器件的方法包括：下电极膜形成步骤，在基板上形成下电极膜; 在下部电极膜上形成由铌酸钾钠构成的铁电薄膜的铁电薄膜形成工序; 在该强电介质薄膜上形成上部电极膜的上部电极膜形成工序; 以及上电极膜蚀刻步骤，通过在上电极膜上进行反应离子蚀刻处理将上电极膜成形为期望的微图案。上电极膜蚀刻步骤是计算通过反应离子蚀刻工艺产生的离子等离子体中的钠发射强度的变化率，并且当变化率下降到预定阈值以下时确定蚀刻工艺完成的步骤。

9. 发明授权

EP2958157B1 PIEZOELECTRIC ELEMENT 有权
标题翻译：压电元件
公开(公告)号：EP2958157B1
公开(公告)日：2017-05-17
申请号：EP15171917.6
申请日：2015-06-12
申请人： TDK Corporation
发明人： Ohta, Ryu , Sakuma, Hitoshi , Hirose, Yuiko
IPC分类号： H01L41/187 , H01L41/09
CPC分类号： H01L41/0805 , H01L41/0973 , H01L41/1873 , H01L41/316
摘要： A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO 3 , and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2¸ is within the range of 21.1° ‰¤ 2¸ ‰¤ 23.4° in the X-ray diffraction pattern (2¸/¸), by the intensity of a diffraction peak, where 2¸ is within the range of 30.1° ‰¤ 2¸ ‰¤ 33.3°, of 0.04 or less.
摘要翻译：提供了与相关技术中的KNN薄膜压电元件相比表现出小泄漏电流密度和高可靠性的压电元件。压电元件的特征在于包括下电极，主要由铌酸钾钠（其是由通式ABO 3表示的钙钛矿型化合物）制成的压电层和上电极，其中压电层存在于下电极和上电极之间，并且压电层具有通过将衍射峰的强度的最大值除以2而确定的值，其中X的角度在X中的21.1°≤2°≤23.4°的范围内衍射峰的衍射图（2λ/¸），其衍射峰的强度在2θ在30.1°‰2‰‰33.3°的范围内，为0.04或更小。

10. 发明公开

EP2948417A4 LEAD-FREE PIEZOELECTRIC MATERIAL 有权
标题翻译：无铅压电材料
公开(公告)号：EP2948417A4
公开(公告)日：2016-09-14
申请号：EP13872624
申请日：2013-01-28
申请人： HEWLETT PACKARD DEVELOPMENT CO
发明人： PATTERSON ERIC A , CANN DAVID , MARDILOVICH PETER
IPC分类号： H01L41/187 , C04B35/468 , C04B35/475 , C04B35/495
CPC分类号： H01L41/1878 , B41J2/14233 , B41J2202/03 , C04B35/462 , C04B35/465 , C04B35/4682 , C04B35/475 , C04B35/495 , C04B2235/3201 , C04B2235/3206 , C04B2235/3234 , C04B2235/3251 , C04B2235/3275 , C04B2235/3298 , H01L41/0973 , H01L41/1873
摘要： A lead-free piezoelectric ceramic material has the general chemical formula xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaN-bO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3, xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3, xBiCoO3-yBa-TiO3-z(Bi0.5Na0.5)TiO3, or xBiCoO3-yNaNbO3-zKNbO3; wherein x+y+z=1, and x, y, z≠0.

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