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1. 发明公开

EP2426697A1 METHOD FOR MANUFACTURING BONDED WAFER 有权
标题翻译：制造结合晶片的方法
公开(公告)号：EP2426697A1
公开(公告)日：2012-03-07
申请号：EP10769820.1
申请日：2010-04-30
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： KAWAI, Makoto , TOBISAKA, Yuji , AKIYAMA, Shoji
IPC分类号： H01L21/02 , H01L21/265 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/67109
摘要： Disclosed is a method for performing peeling without generating breakage of a substrate in the case where the thermal expansion coefficient of a handle substrate is higher than that of a donor substrate. A method for manufacturing a bonded wafer at least includes: a step of forming an ion-implanted interface (5) by implanting ions from the surface of a donor substrate (3); a step of making a bonded substrate by bonding a handle substrate (7), which has a thermal expansion coefficient higher than that of the donor substrate (3), on the donor substrate (3) surface having the ions implanted therein; a step of obtaining a bonded body (1) by performing heat treatment to the bonded substrate; a peeling step wherein the bonded body (1) is cooled to a temperature below the room temperature by means of a cooling apparatus (20), the donor substrate (3) of the bonded body (1) is peeled from the ion-implanted interface, and a donor thin film is transferred onto the handle substrate (7).
摘要翻译：公开了一种在处理基板的热膨胀系数高于供体基板的热膨胀系数的情况下执行剥离而不产生基板破损的方法。一种制造键合晶片的方法至少包括：通过从供体衬底（3）的表面注入离子来形成离子注入界面（5）的步骤; 通过在其中注入有离子的供体衬底（3）表面上结合热膨胀系数高于供体衬底（3）的处理衬底（7）来制造键合衬底的步骤; 通过对粘合基板进行热处理得到粘合体（1）的步骤; 剥离步骤，其中通过冷却装置（20）将结合体（1）冷却至低于室温的温度，结合体（1）的供体基板（3）从离子注入界面并且将供体薄膜转移到处理基板（7）上。

2. 发明公开

EP2270839A1 METHOD FOR MANUFACTURING BONDED SUBSTRATE 有权
标题翻译： HERSTELLUNGSVERFAHRENFÜRGEBUNDENES SUBSTRAT
公开(公告)号：EP2270839A1
公开(公告)日：2011-01-05
申请号：EP09730414.1
申请日：2009-04-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： TOBISAKA, Yuji , KUBOTA, Yoshihiro , ITO, Atsuo , TANAKA, Kouichi , KAWAI, Makoto , AKIYAMA, Shoji , TAMURA, Hiroshi
IPC分类号： H01L21/02 , H01L27/12
CPC分类号： H01L21/187 , H01L21/76254
摘要： Provided is a method for manufacturing a bonded substrate having an excellent thin film over the entire substrate surface, especially even at the vicinity of a bonded end portion. The method for manufacturing the bonded substrate wherein the thin film is provided on a second substrate has at least a step of forming an ion implanted layer by implanting from a surface of a first substrate, i.e., a semiconductor substrate, hydrogen ions or rare gas ions or both types of ions; a step of performing surface activation treatment to at least the first substrate surface wherein ions are implanted or to the bonding surface of the second substrate; a step of bonding the first substrate surface wherein the ions are implanted and the bonding surface of the second substrate with each other, under atmosphere having a humidity of 30% or less and/or a water quantity of 6g/m 3 or less; and a peeling step of separating the first substrate at the ion implanted layer and forming the first substrate in a thin film state.
摘要翻译：提供一种在整个基板表面上，特别是甚至在接合端部附近制造具有优异薄膜的接合基板的方法。用于制造键合衬底的方法，其中薄膜设置在第二衬底上具有至少一个步骤：通过从第一衬底（即，半导体衬底，氢离子或稀有气体离子）的表面注入形成离子注入层或两种类型的离子; 至少对其中注入有离子的第一衬底表面或第二衬底的结合表面进行表面活化处理的步骤; 在湿度为30％以下和/或6g / m 3以下的气氛下，将其中注入离子的第一衬底表面和第二衬底的结合表面彼此接合的步骤; 以及剥离步骤，在离子注入层处分离第一衬底并以薄膜状态形成第一衬底。

3. 发明公开

EP1995788A1 METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译： HERSTELLUNGSVERFAHRENFÜREIN SUBSTRE EINES FOTOELEKTRISCHEN KONVERSIONSELEMENTS
公开(公告)号：EP1995788A1
公开(公告)日：2008-11-26
申请号：EP07738265.3
申请日：2007-03-12
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L31/04 , H01L21/02 , H01L21/20 , H01L21/205
CPC分类号： H01L21/76254 , H01L31/0687 , H01L31/1804 , H01L31/1892 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A silicon layer (10B) having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate (100) and hydrogen ions are implanted to a predetermined depth (L) into the surface region of the silicon substrate (100) through the silicon layer (10B) to form a hydrogen ion-implanted layer (11). Then, an n-type germanium-based crystal layer (20A) whose conductivity type is opposite to that of the silicon layer (10B) and a p-type germanium-based crystal layer (20B) whose conductivity type is opposite to that of the germanium-based crystal layer (20A) are successively vapor-phase grown to provide a germanium-based crystal (20). The surface of the germanium-based crystal layer (20B) and the surface of the supporting substrate (30) are bonded together. In this state, impact is applied externally to separate a silicon crystal (10) from the silicon substrate (100) along the hydrogen ion-implanted layer (11), thereby transferring (peeling off) a laminated structure composed of the germanium-based crystal (20) and the silicon crystal (10) onto the supporting substrate (30).
摘要翻译：在硅衬底（100）的表面上设置具有与本体相反的导电类型的硅层（10B），并将氢离子注入预定深度（L）到硅衬底（100）的表面区域）通过硅层（10B）形成氢离子注入层（11）。然后，其导电类型与硅层（10B）的导电类型相反的n型锗基晶体层（20A）和与导电类型相反的p型锗基晶体层（20B）锗基晶体层（20A）依次气相生长以提供锗基晶体（20）。锗基晶体层（20B）的表面和支撑基板（30）的表面结合在一起。在这种状态下，外部施加冲击以沿着氢离子注入层（11）从硅衬底（100）分离硅晶体（10），从而转移（剥离）由锗基晶体（20）和硅晶体（10）到支撑衬底（30）上。

4. 发明授权

EP2907790B1 METHOD FOR PRODUCING NANOCARBON FILM AND NANOCARBON FILM 有权
公开(公告)号：EP2907790B1
公开(公告)日：2019-05-08
申请号：EP13847732.8
申请日：2013-08-07
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： KAWAI, Makoto , KUBOTA, Yoshihiro
IPC分类号： B82Y30/00 , B82Y40/00 , C30B29/00 , C30B29/02 , C30B29/36 , C30B31/22 , C30B33/06 , H01L21/324 , H01L21/02 , H01L21/762 , C01B32/184 , C01B32/188 , C01B32/15

5. 发明公开

EP3306642A1 METHOD FOR PRODUCING COMPOSITE WAFER PROVIDED WITH OXIDE SINGLE-CRYSTAL THIN FILM 有权
标题翻译：生产提供有氧化物单晶薄膜的复合晶片的方法
公开(公告)号：EP3306642A1
公开(公告)日：2018-04-11
申请号：EP16803409.8
申请日：2016-06-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KAWAI, Makoto
IPC分类号： H01L21/02 , H01L21/265 , H01L27/12 , H01L41/187 , H01L41/312
CPC分类号： H01L41/312 , B32B9/005 , B32B17/06 , B32B18/00 , B32B37/18 , B32B38/0036 , B32B38/10 , B32B2250/02 , B32B2260/02 , B32B2260/04 , B32B2307/20 , B32B2310/0806 , B32B2311/00 , B32B2313/00 , B32B2315/08 , B32B2457/00 , C01G33/006 , C01G35/006 , C30B29/30 , C30B31/22 , H01L21/02 , H01L21/265 , H01L21/76254 , H01L41/1873 , H01L41/338
摘要： Provided is a composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, provided is a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90°C or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.
摘要翻译：本发明提供一种在支撑晶片上转印有氧化物单晶膜的复合晶片，所述膜为钽酸锂或铌酸锂膜，并且所述复合晶片不易在所述膜与所述膜之间的层压界面处产生裂纹或剥离支持晶圆。更具体而言，提供一种制造复合晶片的方法，包括以下步骤：从氧化物晶片的表面注入氢原子离子或分子离子以在其内部形成离子注入层; 对氧化物晶片的表面和支撑晶片的表面中的至少一个进行表面活化处理; 将表面粘合在一起以获得层压体; 在90℃或更高的温度下对层压体进行热处理，在该温度下不会产生裂纹; 并将热处理过的叠层暴露于可见光以沿离子注入层分裂以获得复合晶片。

6. 发明公开

EP3203495A1 BONDED SUBSTRATE AND METHOD FOR MANUFACTURING SAME, AND SUPPORT SUBSTRATE FOR BONDING 有权
标题翻译：结合基板及其制造方法及支撑结合基板
公开(公告)号：EP3203495A1
公开(公告)日：2017-08-09
申请号：EP15845835.6
申请日：2015-09-30
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： KONISHI, Shigeru , KAWAI, Makoto
IPC分类号： H01L21/02 , B23K20/00 , B23K20/16 , H01L21/265 , H01L27/12
CPC分类号： H01L23/147 , B23K20/00 , B23K20/16 , H01L21/265 , H01L21/268 , H01L21/762 , H01L21/76254 , H01L27/12
摘要： A method for manufacturing a bonded substrate is provided, the bonded substrate including a single-crystal semiconductor substrate on a sintered-body substrate that has small warpage after bonding, has good thermal conductivity and small loss at high-frequency region and is suitable for high-frequency devices. Specifically, the method at least includes: applying coating to all of the faces of a sintered-body substrate, so as to obtain a support substrate including at least one layer of amorphous film; and bonding the support substrate and a single-crystal semiconductor substrate via the amorphous film. On a surface of the amorphous film on the support substrate to be bonded with the single-crystal semiconductor substrate, concentration of each of Al, Fe and Ca by ICP-MS method is less than 5.0×10 11 atoms/cm 2 , and surface roughness Rms of the surface of the amorphous film is 0.2 nm or less.
摘要翻译：提供一种用于制造键合衬底的方法，在键合之后具有小翘曲的烧结体衬底上的包括单晶半导体衬底的键合衬底具有良好的导热性和在高频区域的小损耗并且适用于高频率设备。具体地，所述方法至少包括：对烧结体基体的所有表面进行涂覆，以获得包括至少一层非晶膜的支撑基体; 并且通过非晶膜结合支撑衬底和单晶半导体衬底。在待与单晶半导体衬底键合的支撑衬底上的非晶膜表面上，通过ICP-MS方法测得的Al，Fe和Ca各自的浓度小于5.0×10 11原子/ cm 2，并且表面粗糙度Rms 非晶膜的表面的厚度为0.2nm以下。

7. 发明公开

EP2907790A1 METHOD FOR PRODUCING NANOCARBON FILM AND NANOCARBON FILM 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG冯纳诺 - 卡波恩 - 南非卡波尔
公开(公告)号：EP2907790A1
公开(公告)日：2015-08-19
申请号：EP13847732.8
申请日：2013-08-07
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： KAWAI, Makoto , KUBOTA, Yoshihiro
IPC分类号： C01B31/02
CPC分类号： H01L21/76254 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/184 , C01B32/188 , C30B29/02 , C30B29/36 , C30B31/22 , C30B33/06 , H01L21/02043 , H01L21/324
摘要： The present invention relates to a method for producing a nanocarbon film using a hybrid substrate with which a nanocarbon film free from defects can be produced at low cost. This method is characterized in forming an ion implantation region by implanting ion into a single crystal silicon carbide substrate from a surface thereof and after bonding together the surface of the silicon carbide substrate implanted with ion and a surface of a base substrate, releasing the silicon carbide substrate at the ion implanted region to produce a hybrid substrate in which a thin film that includes the single crystal silicon carbide is transferred onto the base substrate, and then heating the hybrid substrate to sublime silicon atoms from the thin film that includes the single crystal silicon carbide so as to obtain the nanocarbon film.
摘要翻译：本发明涉及一种使用可以以低成本生产无缺陷的纳米碳膜的混合基板的纳米碳膜的制造方法。该方法的特征在于通过从其表面将离子注入到单晶碳化硅衬底中并在将离子和基底表面的碳化硅衬底的表面粘合在一起来形成离子注入区域，释放碳化硅衬底，以产生其中将包含单晶碳化硅的薄膜转移到基底衬底上的混合衬底，然后加热混合衬底以使来自包括单晶硅的薄膜的硅原子升华碳化物以获得纳米碳膜。

8. 发明授权

EP1983553B8 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权转让
标题翻译：方法制造SOI衬底
公开(公告)号：EP1983553B8
公开(公告)日：2014-02-19
申请号：EP07713948.3
申请日：2007-02-08
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L21/20 , H01L29/786 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate (32) having a smooth surface is placed on a hot plate (31) which constitutes a heating section, and the smooth surface of the heating plate (32) is closely adhered on the rear surface of a single-crystal Si substrate (10) bonded to a transparent insulating substrate (20). The temperature of the heating plate (32) is kept at 200°C or higher but not higher than 350°C. When the rear surface of the single-crystal Si substrate (10) bonded to the insulating substrate (20) is closely adhered on the heating plate (32), the single-crystal Si substrate (10) is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate (20). A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate (10), thus separation takes place at a hydrogen ion-implanted interface.

9. 发明授权

EP1986217B1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权转让
标题翻译：一种用于生产半导体衬底
公开(公告)号：EP1986217B1
公开(公告)日：2013-04-24
申请号：EP07708227.9
申请日：2007-02-08
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L21/02 , C30B31/22 , C30B33/06 , H01L21/20 , H01L21/265
CPC分类号： H01L21/76254 , C30B33/04 , H01L21/265

10. 发明授权

EP2261954B1 METHOD FOR PRODUCING SOI SUBSTRATE 有权
公开(公告)号：EP2261954B1
公开(公告)日：2020-01-22
申请号：EP09729038.1
申请日：2009-04-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KAWAI, Makoto , ITO, Atsuo , KUBOTA, Yoshihiro , TANAKA, Kouichi , TOBISAKA, Yuji , TAMURA, Hiroshi
IPC分类号： H01L21/762 , H01L27/12

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