专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3109907A1 DEVICE FOR EMITTING AND DETECTING PHOTONS AND METHOD OF PRODUCING THE SAME 有权转让
标题翻译：组件可以查看排放和光子探测和方法及其
公开(公告)号：EP3109907A1
公开(公告)日：2016-12-28
申请号：EP15173574.3
申请日：2015-06-24
申请人： Nokia Technologies Oy
发明人： Bower, Chris , White, Richard , Andrew, Piers
IPC分类号： H01L31/12 , H01L31/028 , H01L31/0352 , H01L27/28 , A61B5/02 , H01L27/144
CPC分类号： H01L31/125 , A61B5/0077 , A61B5/02 , A61B5/02416 , A61B5/1455 , A61B5/7485 , A61B2562/0233 , A61B2576/00 , H01L27/1446 , H01L27/156 , H01L31/028 , H01L31/035218 , H01L31/1804 , H01L33/0041 , H01L33/0054 , H01L33/34 , Y02E10/547
摘要： A single device for emitting and detecting photons. The device comprises a semiconductive layer (3), active material (5), further dielectric layer (17) and overlying electrode (25). In a first mode of operation an electrical field is applied between the semiconductive layer (3) and the overlying electrode (25). This enables photons to be emitted from the active material (5). In a second mode of operation, the semiconductive layer (3) constitutes a channel of a field effect transistor (23). The field effect transistor further comprises source electrode (11), drain electrode (15), gate electrode (13) and dielectric layer (19). Photons absorbed by the active material (5) causes charge to be transferred to the semiconductor layer (3), thereby changing the channel resistance. A plurality of such devices can be arranged in a configurable array.
摘要翻译：用于发射和检测的光子的单个装置。该装置包括一个半导电层（3），活性材料（5）此外介电层（17）和上覆的电极（25）。在电场的操作的第一模式中的半导电层（3）和上覆的电极（25）之间施加。这使得光子可以从活性材料（5）发射的。在操作的第二模式中，半导体层（3）构成的场效应晶体管（23）的信道。场效应晶体管还包括源极电极（11），漏电极（15），栅电极（13）和电介质层（19）。光子通过将活性材料（5）吸收使电荷被转移到半导体层（3），从而改变沟道电阻。求装置的多个可在一个可配置的阵列被布置。

2. 发明授权

EP2685505B1 THIN-FILM TRANSISTOR AND DISPLAY DEVICE 失效
标题翻译：薄膜晶体管及显示装置
公开(公告)号：EP2685505B1
公开(公告)日：2016-12-21
申请号：EP12757768.2
申请日：2012-03-02
申请人： Sharp Kabushiki Kaisha
发明人： KATOH, Sumio , KITAKADO, Hidehito
IPC分类号： H01L29/786 , H01L21/336 , H01L29/417 , H01L27/12 , H01L33/00
CPC分类号： H01L29/78693 , H01L27/1222 , H01L29/41733 , H01L29/78609 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L33/0041

3. 发明公开

EP2736074A4 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, LIQUID CRYSTAL PANEL, AND DISPLAY DEVICE 审中-公开
标题翻译：阵列基板，制造方法，液晶面板及显示装置
公开(公告)号：EP2736074A4
公开(公告)日：2015-02-18
申请号：EP12788105
申请日：2012-07-20
申请人： BOE TECHNOLOGY GROUP CO LTD
发明人： GUO WEI , LEE WOOBONG
IPC分类号： H01L27/12 , G02F1/1362 , G02F1/1368 , H01L29/45 , H01L29/49 , H01L29/786
CPC分类号： H01L27/15 , G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L33/0041

4. 发明公开

EP2685505A4 THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE 失效
标题翻译：薄膜晶体管，制造方法和显示装置，其
公开(公告)号：EP2685505A4
公开(公告)日：2014-09-03
申请号：EP12757768
申请日：2012-03-02
申请人： SHARP KK
发明人： KATOH SUMIO , KITAKADO HIDEHITO
IPC分类号： H01L29/786 , H01L21/336 , H01L27/12 , H01L29/417 , H01L33/00
CPC分类号： H01L29/78693 , H01L27/1222 , H01L29/41733 , H01L29/78609 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L33/0041

5. 发明公开

EP2741332A2 Array substrate and method of fabricating the same 审中-公开
标题翻译： Array-Substrat und Herstellungsverfahrendafür
公开(公告)号：EP2741332A2
公开(公告)日：2014-06-11
申请号：EP13173321.4
申请日：2013-06-24
申请人： LG Display Co., Ltd.
发明人： Yang, Joon-Young
IPC分类号： H01L27/12 , H01L29/786 , H01L29/417
CPC分类号： H01L29/41733 , H01L21/44 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L27/1296 , H01L29/41775 , H01L29/45 , H01L29/66969 , H01L29/78636 , H01L29/7869 , H01L33/0041
摘要： An array substrate includes an oxide semiconductor layer; an etch stopper including a first contact hole exposing each of both sides of the oxide semiconductor layer; source and drain electrodes spaced apart from each other with the oxide semiconductor layer therebetween; a first passivation layer including a contact hole exposing each of both ends of the oxide semiconductor layer and each of ends of the source and drain electrode that oppose the both ends of the oxide semiconductor layer, respectively; and a connection pattern at the second contact hole contacting both the oxide semiconductor layer and each of the source and drain electrodes.
摘要翻译：阵列基板包括氧化物半导体层; 蚀刻停止器，其包括暴露所述氧化物半导体层的两侧的每一侧的第一接触孔; 源极和漏极彼此间隔开，其间具有氧化物半导体层; 第一钝化层，包括接触孔，分别暴露氧化物半导体层的两端和与氧化物半导体层的两端相对的源极和漏极的每个端部; 以及在第二接触孔处接触与氧化物半导体层和源极和漏极电极中的每一个接触的连接图案。

6. 发明授权

EP2337094B1 Source de photons résultants d'une recombinaison d'excitons localisés 有权
标题翻译：一种是基于本地化的激子图片来源重组
公开(公告)号：EP2337094B1
公开(公告)日：2012-06-20
申请号：EP10195018.6
申请日：2010-12-14
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Centre National de la Recherche Scientifique , STMicroelectronics (Grenoble 2) SAS
发明人： Espiau de Lamaestre, Roch , Greffet, Jean-Jacques , Guillaumot, Bernard , Esteban Llorente, Ruben
IPC分类号： H01L33/00 , H01L33/06 , H01L33/40 , H01L33/46
CPC分类号： H01L33/0041 , H01L33/06 , H01L33/405 , H01L33/465

7. 发明公开

EP2272677A2 Semiconductor device, optical print head and image forming apparatus 有权转让
标题翻译： Halbleiterbauelement，optischer Druckkopf und Bilderzeugungsvorrichtung
公开(公告)号：EP2272677A2
公开(公告)日：2011-01-12
申请号：EP10169002.2
申请日：2010-07-09
申请人： Oki Data Corporation
发明人： Furuta, Hironori , Nakai, Yusuke , Fujiwara, Hiroyuki
IPC分类号： B41J2/45 , H01L27/15
CPC分类号： H01L27/153 , B41J2/451 , H01L33/0041
摘要： A semiconductor device includes three-terminal light emitting element array provided on a substrate, which includes a plurality of three-terminal light emitting elements which are substantially linearly arranged. Each three-terminal light emitting elements includes a first, second and third terminals. The third terminal is used to control a current between the first and second terminals. A Lead-out wiring portion is connected to the plurality of three-terminal light emitting elements. The three-terminal light emitting element array includes a common layer provided between two or more three-terminal light emitting elements adjacent to each other. The common layer mutually connects the second terminals (or the third terminals) of che two or three three-terminal light emitting elements. The lead-out wiring portion includes wirings led from the common layer and the plurality of three-terminal light emitting elements and extending in a direction substantially perpendicular to an arranging direction of the plurality of three-terminal light emitting elements.
摘要翻译：半导体器件包括设置在基板上的三端发光元件阵列，其包括基本上线性排列的多个三端子发光元件。每个三端子发光元件包括第一，第二和第三端子。第三端子用于控制第一和第二端子之间的电流。引出布线部连接到多个三端子发光元件。三端子发光元件阵列包括设置在彼此相邻的两个或更多个三端子发光元件之间的公共层。公共层将两个或三个三端子发光元件的第二端子（或第三端子）相互连接。引出布线部分包括从公共层和多个三端子发光元件引出的布线，并且沿着与多个三端子发光元件的布置方向基本垂直的方向延伸。

8. 发明公开

EP2211387A2 Procédé de réalisation d'une homojonction pn dans une nanostructure 有权
标题翻译：维拉法赫尔·赫斯特伦
公开(公告)号：EP2211387A2
公开(公告)日：2010-07-28
申请号：EP10290025.5
申请日：2010-01-19
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： Romain-Latu, Eddy , Gilet, Philippe
IPC分类号： H01L29/861 , H01L21/329 , H01L29/06 , H01L29/20 , H01L29/24
CPC分类号： H01L29/861 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/2003 , H01L29/24 , H01L29/66204 , H01L29/8613 , H01L33/0041 , H01L33/02 , H01L33/18 , H01L33/24 , H01L33/28 , Y10S977/762 , Y10S977/932
摘要： L'invention concerne un procédé de réalisation d'une jonction p-n dans une nanostructure (1), dans lequel la nanostructure (1) présente un ou plusieurs nanoconstituant(s) réalisé(s) en un matériau semi-conducteur présentant un seul type dopage présentant un type de conductivité, caractérisé en ce qu 'il comprend une étape consistant à former un élément diélectrique (3, 32,..., 3n), enrobant la nanostructure (1) sur une hauteur h, l'élément diélectrique générant un potentiel de surface apte à inverser le type de conductivité sur une largeur déterminée W du ou des nanoconstituant(s) ainsi enrobé(s) sur la hauteur h.
摘要翻译：该方法包括形成介电元件（3），例如无机材料如氧化物和有机材料，例如聚合物，聚苯乙烯，聚萘或聚丙烯。将电介质元件涂覆在半导体器件（10）的纳米结构（1）上至特定高度（H）。通过介电元件形成电位表面（phi），以在纳米结构的纳米组分的确定的宽度（W）上反转导电性。还包括以下独立权利要求：（1）用于实现具有P-N结（2）的纳米结构的方法，该纳米结构包括纳米结构的半导体器件。

9. 发明授权

EP0197052B1 A NOVEL SEMICONDUCTOR DEVICE 失效
标题翻译：一个新的半导体器件
公开(公告)号：EP0197052B1
公开(公告)日：1989-08-30
申请号：EP85904564.3
申请日：1985-09-06
申请人： AT&T Corp.
发明人： SIMMONS, John, George , TAYLOR, Geoffrey, Walter
IPC分类号： H01L29/12 , H01L29/10
CPC分类号： H01L29/205 , H01L29/165 , H01L29/365 , H01L29/7373 , H01L29/7375 , H01L29/739 , H01L29/74 , H01L31/1105 , H01L33/0041
摘要： A new solid state field effect bipolar device provides for high current gain and low input capacitance, while avoiding the "punch-through" effects that limit the downward scaling of conventional bipolar and field effect devices. The device typically compromises a metallic (e.g. a metal or silicide) emitter, which makes ohmic contact to a semi-insulator; a channel terminal which contacts an inversion layer formed at the interface between the semiinsulator and a semiconductor depletion region; and a collector, which is the semiconductor bulk. The novel device controls the flow of majority carriers from the emitter into the collector by the biasing action of charge in the inversion channel. The technique can be utilized in making a transistor, photodetector, thyristor, controlled optical emitter, and other devices.

10. 发明公开

EP0276140A3 A light emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：EP0276140A3
公开(公告)日：1989-07-26
申请号：EP88300455.8
申请日：1988-01-20
申请人： HIROSHIMA UNIVERSITY
发明人： Yamanishi, Masamichi , Suemune, Ikuo 1-104, Hirodai-Gagara-Daiichi , Kan, Yasuo B-206 Iwata Apartment
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01L33/0041 , H01L33/0025 , H01S5/06203 , H01S5/06216 , H01S5/223 , H01S5/3222 , H01S5/3428
摘要： The disclosed light emitting semiconductor device has an n-type (or p-type) base region sandwiched by a p-type (or n-type) emitter region and a p-type (or n-type) collector region. An injecting voltage source is connected across the emitter region and base region so as to apply a constant voltage therebetween, while a control voltage source is connected across the emitter region and the collector region so as to selectively apply a reverse bias to a base-collector junction for controlling recombination of carriers injected to the base region. The control voltage source produces such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式