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1. 发明公开

EP1713127A3 Device for improving negative potential immunity of an integrated circuit 审中-公开
标题翻译：设备，用于减少对负的电位的集成电路的易感性
公开(公告)号：EP1713127A3
公开(公告)日：2008-05-28
申请号：EP06075748.1
申请日：2006-03-30
申请人： Delphi Technologies, Inc.
发明人： Glenn, Jack L. , Clear, Troy D. , Gose, Mark W.
IPC分类号： H01L29/06 , H01L29/78
CPC分类号： H01L29/7809 , H01L27/0722 , H01L29/0653 , H01L29/0878 , H01L29/7815 , H01L29/7816 , H01L29/7826 , H03K17/0822
摘要： An integrated circuit (IC) (200) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket (108), which is formed in a second-type substrate (110). The IC (200) also includes a second-type+ isolation ring (110A) formed in the substrate (110) to isolate the first-type epitaxial pocket (108) and a first-type+ ring (114) formed through the first-type epitaxial pocket (108) between the second-type+ isolation ring (110A) and the DMOS cell.

2. 发明授权

EP0599221B1 Voltage-driven semiconductor device 失效
标题翻译：电压控制半导体器件
公开(公告)号：EP0599221B1
公开(公告)日：1998-07-08
申请号：EP93118663.9
申请日：1993-11-19
申请人： Hitachi, Ltd.
发明人： Sugawara, Yoshitaka
IPC分类号： H01L29/739 , H01L29/73 , H01L29/08 , H01L27/07
CPC分类号： H01L27/0722 , H01L27/0716 , H01L29/7393 , H01L29/7395

3. 发明公开

EP0807977A2 Semiconductor device including protection means 失效
标题翻译：半导体器件包括保护装置
公开(公告)号：EP0807977A2
公开(公告)日：1997-11-19
申请号：EP97303309.5
申请日：1997-05-15
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Duvvury, Charvaka , Briggs, David Douglas ,
IPC分类号： H01L27/02
CPC分类号： H01L27/0722 , H01L27/0251 , H01L27/0259
摘要： A high voltage DENMOS transistor (10) having improved ESD protection. The transistor (10) is optimized to provide maximum substrate current in order to turn on the inherent lateral npn transistor during an ESD event so that the lateral npn can dissipate the ESD event without damage to the transistor (10). This is accomplished by optimizing the overlap (A) of the drain extended region (16) and the gate electrode (28) to control the gate coupling to achieve maximum substrate current.
摘要翻译：高电压DENMOS晶体管（10）具有改进的ESD保护。晶体管（10）被优化以提供最大衬底电流，以便在ESD事件期间导通固有的横向npn晶体管，使得横向npn可以消散ESD事件而不损坏晶体管（10）。这通过优化漏极扩展区域（16）和栅极电极（28）的重叠部分（A）来控制栅极耦合以实现最大衬底电流来实现。

4. 发明授权

EP0057024B1 Semiconductor device having a safety device 有权转让
标题翻译：具有安全装置的半导体器件
公开(公告)号：EP0057024B1
公开(公告)日：1984-11-21
申请号：EP82200025.3
申请日：1982-01-12
申请人： Philips Electronics N.V.
发明人： De Graaff, Hendrik Cornelis , Voncken, Wilhelmus Gerlachus
IPC分类号： H01L27/02 , H01L29/78
CPC分类号： H01L27/0251 , H01L21/823462 , H01L27/0722

5. 发明授权

EP0588300B1 Semiconductor transistor 失效
标题翻译：半导体晶体管
公开(公告)号：EP0588300B1
公开(公告)日：2001-08-08
申请号：EP93114756.5
申请日：1993-09-14
申请人： CANON KABUSHIKI KAISHA
发明人： Morishita, Masakazu , Sugawa, Shigetoshi , Koizumi, Toru
IPC分类号： H01L29/76 , H01L27/07
CPC分类号： H01L29/78696 , H01L27/0623 , H01L27/0722 , H01L29/1087 , H01L29/7317 , H01L29/739 , H01L29/7838 , H01L29/78654

6. 发明公开

EP0700090A1 Semiconductor integrated circuit comprising a current mirror circuit 失效
标题翻译： Integrierte Halbleiterschaltung mit einer Stromspiegelschaltung
公开(公告)号：EP0700090A1
公开(公告)日：1996-03-06
申请号：EP95109227.9
申请日：1995-06-14
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ito, Takao, c/o Int. Prop. Div., K.K. Toshiba
IPC分类号： H01L27/07 , G05F3/26
CPC分类号： H01L27/0722 , G05F3/265
摘要： A current mirror circuit comprises first and second lateral-type bipolar transistors (11, 12) having first and second conductive films (26) each formed via an insulation film (25), on the portion of the surface of a base region (22) between an emitter region (24) and a collector region (23). The first and second emitter regions (24) and the first and second collector regions (23) are formed in the surface region of the base region are separately from each other. A diode (13) is used as a bias circuit. The diode applies a bias voltage corresponding to the output current of the first transistor, that is, the reference current, to the first and second conductive films of the first and second transistors, so that the width of the channel formed in a base region is changed in accordance with the reference current, and therefore the current amplification rate of each transistor can be maintained at a high value even if a large operation current is supplied.
摘要翻译：电流镜电路包括具有通过绝缘膜（25）形成的第一和第二导电膜（26）的第一和第二横向型双极晶体管（11,12），在基极区域（22）的表面部分上，在发射极区域（24）和集电极区域（23）之间。第一和第二发射极区域（24）以及在基极区域的表面区域中形成的第一和第二集电极区域（23）彼此分开。二极管（13）用作偏置电路。二极管将对应于第一晶体管的输出电流（即，参考电流）的偏置电压施加到第一和第二晶体管的第一和第二导电膜，使得形成在基极区域中的沟道的宽度为根据参考电流而变化，因此即使提供大的工作电流，也可以将各晶体管的电流放大率保持在高值。

7. 发明公开

EP0657944A2 Gate controlled lateral bipolar junction transistor and method of fabrication thereof 失效
标题翻译：栅极控制的横向双极结晶体管及其制造方法
公开(公告)号：EP0657944A2
公开(公告)日：1995-06-14
申请号：EP94308956.5
申请日：1994-12-02
申请人： NORTHERN TELECOM LIMITED
发明人： Mahli, Duljit S. , Kung, William , Deen, M. Jamal , Ilowski, John , Kovacic, Stephen J.
IPC分类号： H01L29/739 , H01L27/07 , H01L29/735
CPC分类号： H03G1/007 , H01L27/0722 , H01L29/7302 , H01L29/735 , H01L29/7393
摘要： A gate controlled lateral bipolar junction transistor (GCLBJT) device for an integrated circuit and a method of fabrication thereof are provided. The GCLBJT resembles a merged field effect transistor and lateral bipolar transistor, i.e. a lateral bipolar transistor having base, emitter and collector terminals and a fourth terminal for controlling a gate electrode overlying an active base region. The device is operable as an electronically configurable lateral transistor. Advantageously a heavily doped buried layer provides a base electrode having a base contact which surrounds and encloses the collector. The surface region between emitter and collector is characterised by lightly doped regions adjacent and contiguous with the heavily doped emitter and collector, which effectively reduce the base width of the bipolar transistor and improve operation for analogue applications. A threshold adjust implant in the surface of the base region under the gate electrode allows for control of threshold voltage of the surface MOS channel. Performance parameters of the bipolar transistor may be adjusted via a signal to the fourth i.e., gate, terminal, to control inversion under the gate, thereby controlling the path of carriers between the emitter and collector. Transistor performance characteristics such as common-emitter current gain, unity-gain frequency, and the low frequency noise properties are all variable quantities which can be specified electronically, i.e. they are programmable by a signal applied to the gate. Concurrent use of field effect and bipolar injection phenomenon within the same device yield the salient device characteristics. Applications include mixer and modulation circuits.
摘要翻译：提供了一种用于集成电路的栅控横向双极结型晶体管（GCLBJT）器件及其制造方法。 GCLBJT类似于合并场效应晶体管和横向双极晶体管，即具有基极，发射极和集电极端子的横向双极晶体管，以及用于控制覆盖有源基极区域的栅极的第四端子。该器件可作为电子可配置的横向晶体管进行操作。有利的是，重掺杂埋层提供具有围绕并包围集电极的基极触点的基极。发射极和集电极之间的表面区域由与重掺杂的发射极和集电极相邻并邻接的轻掺杂区域表征，这有效地减小了双极晶体管的基极宽度并且改进了用于模拟应用的操作。在栅极电极下方的基极区域的表面中的阈值调整注入允许控制表面MOS沟道的阈值电压。双极晶体管的性能参数可以通过一个信号调整到第四个即栅极端，以控制栅极下的反转，从而控制发射极和集电极之间的载流子路径。诸如共发射极电流增益，单位增益频率和低频噪声特性之类的晶体管性能特性都是可变的量，它们可用电子方式指定，即它们可通过施加到栅极的信号来编程。在同一器件内同时使用场效应和双极注入现象会产生显着的器件特性。应用包括混频器和调制电路。

8. 发明公开

EP0047392A3 High-voltage semiconductor switch 有权
标题翻译：高压半导体开关
公开(公告)号：EP0047392A3
公开(公告)日：1983-07-20
申请号：EP81105991
申请日：1981-07-30
申请人： Deutsche ITT Industries GmbH , ITT INDUSTRIES INC.
发明人： Pernyeszi, Joseph
IPC分类号： H01L27/06 , H01L29/78 , H03K17/00
CPC分类号： H01L27/0722 , H01L27/0716 , H01L29/7393 , H01L29/7397 , H03K17/567

9. 发明授权

EP0006119B1 Integrierter Sperrschicht-Feldeffekt-Transistor und Verfahren zu dessen Herstellung 失效
标题翻译：集成连接场效应晶体管及其制作方法
公开(公告)号：EP0006119B1
公开(公告)日：1983-06-01
申请号：EP79101352.7
申请日：1979-05-03
申请人： International Business Machines Corporation
发明人： Bergeron, David Leo , Stephens, Geoffrey Brownell
IPC分类号： H01L27/06 , H01L29/80 , H01L21/82 , H01L21/265
CPC分类号： H01L29/808 , H01L21/8248 , H01L27/0716 , H01L27/0722

10. 发明授权

EP0809293B1 Power semiconductor structure with lateral transistor driven by vertical transistor 失效
标题翻译：与由所述横向晶体管控制的垂直晶体管功率半导体结构
公开(公告)号：EP0809293B1
公开(公告)日：2001-08-29
申请号：EP96830292.7
申请日：1996-05-21
申请人： CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
发明人： Aiello, Natale , Patti, Davide , Leonardi, Salvatore , Scaccianoce, Salvatore
IPC分类号： H01L27/00 , H01L27/07 , H01L27/082
CPC分类号： H01L27/0821 , H01L27/0722

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