专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP0657944A2 Gate controlled lateral bipolar junction transistor and method of fabrication thereof 失效
标题翻译：栅极控制的横向双极结晶体管及其制造方法
公开(公告)号：EP0657944A2
公开(公告)日：1995-06-14
申请号：EP94308956.5
申请日：1994-12-02
申请人： NORTHERN TELECOM LIMITED
发明人： Mahli, Duljit S. , Kung, William , Deen, M. Jamal , Ilowski, John , Kovacic, Stephen J.
IPC分类号： H01L29/739 , H01L27/07 , H01L29/735
CPC分类号： H03G1/007 , H01L27/0722 , H01L29/7302 , H01L29/735 , H01L29/7393
摘要： A gate controlled lateral bipolar junction transistor (GCLBJT) device for an integrated circuit and a method of fabrication thereof are provided. The GCLBJT resembles a merged field effect transistor and lateral bipolar transistor, i.e. a lateral bipolar transistor having base, emitter and collector terminals and a fourth terminal for controlling a gate electrode overlying an active base region. The device is operable as an electronically configurable lateral transistor. Advantageously a heavily doped buried layer provides a base electrode having a base contact which surrounds and encloses the collector. The surface region between emitter and collector is characterised by lightly doped regions adjacent and contiguous with the heavily doped emitter and collector, which effectively reduce the base width of the bipolar transistor and improve operation for analogue applications. A threshold adjust implant in the surface of the base region under the gate electrode allows for control of threshold voltage of the surface MOS channel. Performance parameters of the bipolar transistor may be adjusted via a signal to the fourth i.e., gate, terminal, to control inversion under the gate, thereby controlling the path of carriers between the emitter and collector. Transistor performance characteristics such as common-emitter current gain, unity-gain frequency, and the low frequency noise properties are all variable quantities which can be specified electronically, i.e. they are programmable by a signal applied to the gate. Concurrent use of field effect and bipolar injection phenomenon within the same device yield the salient device characteristics. Applications include mixer and modulation circuits.
摘要翻译：提供了一种用于集成电路的栅控横向双极结型晶体管（GCLBJT）器件及其制造方法。 GCLBJT类似于合并场效应晶体管和横向双极晶体管，即具有基极，发射极和集电极端子的横向双极晶体管，以及用于控制覆盖有源基极区域的栅极的第四端子。该器件可作为电子可配置的横向晶体管进行操作。有利的是，重掺杂埋层提供具有围绕并包围集电极的基极触点的基极。发射极和集电极之间的表面区域由与重掺杂的发射极和集电极相邻并邻接的轻掺杂区域表征，这有效地减小了双极晶体管的基极宽度并且改进了用于模拟应用的操作。在栅极电极下方的基极区域的表面中的阈值调整注入允许控制表面MOS沟道的阈值电压。双极晶体管的性能参数可以通过一个信号调整到第四个即栅极端，以控制栅极下的反转，从而控制发射极和集电极之间的载流子路径。诸如共发射极电流增益，单位增益频率和低频噪声特性之类的晶体管性能特性都是可变的量，它们可用电子方式指定，即它们可通过施加到栅极的信号来编程。在同一器件内同时使用场效应和双极注入现象会产生显着的器件特性。应用包括混频器和调制电路。

2. 发明公开

EP0657944A3 Gate controlled lateral bipolar junction transistor and method of fabrication thereof 失效
标题翻译： Gartesteuerter横向双相变压器和Verfahren zur Herstellung。
公开(公告)号：EP0657944A3
公开(公告)日：1995-08-02
申请号：EP94308956.5
申请日：1994-12-02
申请人： NORTHERN TELECOM LIMITED
发明人： Mahli, Duljit S. , Kung, William , Deen, M. Jamal , Ilowski, John , Kovacic, Stephen J.
IPC分类号： H01L29/739 , H01L27/07 , H01L29/735
CPC分类号： H03G1/007 , H01L27/0722 , H01L29/7302 , H01L29/735 , H01L29/7393
摘要： A gate controlled lateral bipolar junction transistor (GCLBJT) device for an integrated circuit and a method of fabrication thereof are provided. The GCLBJT resembles a merged field effect transistor and lateral bipolar transistor, i.e. a lateral bipolar transistor having base, emitter and collector terminals and a fourth terminal for controlling a gate electrode overlying an active base region. The device is operable as an electronically configurable lateral transistor. Advantageously a heavily doped buried layer provides a base electrode having a base contact which surrounds and encloses the collector. The surface region between emitter and collector is characterised by lightly doped regions adjacent and contiguous with the heavily doped emitter and collector, which effectively reduce the base width of the bipolar transistor and improve operation for analogue applications. A threshold adjust implant in the surface of the base region under the gate electrode allows for control of threshold voltage of the surface MOS channel. Performance parameters of the bipolar transistor may be adjusted via a signal to the fourth i.e., gate, terminal, to control inversion under the gate, thereby controlling the path of carriers between the emitter and collector. Transistor performance characteristics such as common-emitter current gain, unity-gain frequency, and the low frequency noise properties are all variable quantities which can be specified electronically, i.e. they are programmable by a signal applied to the gate. Concurrent use of field effect and bipolar injection phenomenon within the same device yield the salient device characteristics. Applications include mixer and modulation circuits.
摘要翻译：提供了一种用于集成电路的栅极控制横向双极结型晶体管（GCLBJT）器件及其制造方法。 GCLBJT类似于合并的场效应晶体管和横向双极晶体管，即具有基极，发射极和集电极端子的横向双极晶体管，以及用于控制覆盖有源基极区域的栅电极的第四端子。该器件可操作为电子可配置的横向晶体管。有利地，重掺杂掩埋层提供具有包围和封闭收集器的基极接触的基极。发射极和集电极之间的表面区域的特征在于与重掺杂的发射极和集电极相邻并邻近的轻掺杂区域，这有效地降低了双极晶体管的基极宽度并改善了模拟应用的操作。在栅电极下方的基极区域的表面中的阈值调整植入允许控制表面MOS沟道的阈值电压。双极晶体管的性能参数可以通过信号调整到第四个即栅极，以控制栅极下的反相，从而控制发射极和集电极之间的载流子路径。诸如共发射极电流增益，单位增益频率和低频噪声特性的晶体管性能都是可以电子指定的可变量，即它们可以通过施加到栅极的信号来编程。同时使用场效应和双极注入现象产生显着的器件特性。应用包括混频器和调制电路。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式