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1. 发明公开

EP2642515A3 Semiconductor element and method of manufacturing same 有权转让
标题翻译：半导体器件及其制造方法
公开(公告)号：EP2642515A3
公开(公告)日：2016-09-07
申请号：EP13001320.4
申请日：2013-03-15
申请人： Stanley Electric Co., Ltd.
发明人： Chinone, Takako , Miyachi, Mamoru , Saito, Tatsuma , Akagi, Takanobu
IPC分类号： H01L21/58 , H01L23/373 , H01L33/64 , H01L23/00 , H01L21/02 , H01L29/45 , H01L33/00
CPC分类号： H01L21/02425 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/45 , H01L33/0079 , H01L33/641 , H01L2224/29109 , H01L2224/29144 , H01L2224/29155 , H01L2224/83193 , H01L2224/83203 , H01L2224/83805 , H01L2924/013 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/0105 , H01L2924/01079 , H01L2924/00
摘要： A method of manufacturing a semiconductor element includes forming a first bonding layer (13) containing a metal, which forms a eutectic crystal with Au, on a first substrate (11) to provide a first laminated body. The method also includes forming an element structure layer having a semiconductor layer (23) on a second substrate (21). The method also includes forming a second bonding layer (25) on the element structure layer (23) to provide a second laminated body. The second bonding layer (25) has a metal underlayer (25A) containing a metal, which forms a eutectic crystal with Au. The second bonding layer also has a surface layer (25B) that contains Au. The method also includes performing heating pressure-bonding on the first and second laminated bodies with the first and second bonding layers facing each other. The heating temperature of the second substrate (21) in the heating pressure-bonding is higher than the heating temperature of the first substrate (11).

2. 发明公开

EP2945189A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP2945189A1
公开(公告)日：2015-11-18
申请号：EP13870456.4
申请日：2013-01-09
申请人： Hitachi, Ltd.
发明人： TANIE, Hisashi , IKEDA, Osamu
IPC分类号： H01L21/52 , H01L21/60
CPC分类号： H01L24/09 , H01L21/563 , H01L21/78 , H01L23/5382 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/83 , H01L24/94 , H01L2224/033 , H01L2224/0345 , H01L2224/0346 , H01L2224/0383 , H01L2224/0401 , H01L2224/04026 , H01L2224/05655 , H01L2224/06181 , H01L2224/0901 , H01L2224/0905 , H01L2224/091 , H01L2224/095 , H01L2224/1145 , H01L2224/13012 , H01L2224/13016 , H01L2224/13147 , H01L2224/13155 , H01L2224/1411 , H01L2224/14181 , H01L2224/17107 , H01L2224/2745 , H01L2224/29078 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/291 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/30181 , H01L2224/32245 , H01L2224/32501 , H01L2224/33181 , H01L2224/73103 , H01L2224/73204 , H01L2224/75301 , H01L2224/75755 , H01L2224/75756 , H01L2224/83121 , H01L2224/83203 , H01L2224/83447 , H01L2224/83815 , H01L2224/94 , H01L2924/351 , H01L2924/00014 , H01L2924/00012 , H01L2924/014 , H01L2224/11 , H01L2224/27 , H01L2924/00
摘要： In order to achieve both a reduction in thermal resistance and an improvement in thermal deformation absorbing property of a semiconductor device having a packaging structure in which a semiconductor chip 1 is electrically connected to conductive members 3a and 3b via bonding members 2a and 2b, the bonding members 2a and 2b each includes a stacked structure provided with, in the order from the side close to the semiconductor chip 1, a nanospring layer 4 configured from a plurality of springs having a nano-order size, a planar layer 5 supporting the plurality of springs, and a bonding layer 6. The thickness of the nanospring layer 4 is larger than the thickness of the bonding layer 6, and the thickness of the bonding layer 6 is larger than the thickness of the planar layer 5.
摘要翻译：为了同时实现具有半导体芯片1经由接合构件2a和2b与导电构件3a和3b电连接的封装结构的半导体器件的热阻降低和热变形吸收性能的提高，构件2a和2b各自包括从靠近半导体芯片1的一侧开始依次设置由多个具有纳米级尺寸的弹簧构成的纳米弹簧层4的层叠结构，支撑多个弹簧和粘合层6.纳米弹簧层4的厚度大于粘合层6的厚度，并且粘合层6的厚度大于平面层5的厚度。

4. 发明公开

EP2722410A1 Electrically conductive bonding material and method of bonding with the same 审中-公开
标题翻译：导电粘合剂材料，方法与材料和半导体器件键合，这已经被胶合到它
公开(公告)号：EP2722410A1
公开(公告)日：2014-04-23
申请号：EP13192408.6
申请日：2010-04-27
申请人： Hitachi Chemical Co., Ltd.
发明人： YASUDA, Yuusuke , MORITA, Toshiaki , IDE, Eiichi , INADA, Teiichi
IPC分类号： C22C1/05 , B22F1/00 , H01B1/22
CPC分类号： B22F1/0074 , C22C1/05 , H01B1/22 , H01L21/565 , H01L23/049 , H01L23/10 , H01L23/13 , H01L23/142 , H01L23/15 , H01L23/24 , H01L23/3107 , H01L23/3121 , H01L23/34 , H01L23/3735 , H01L23/488 , H01L23/492 , H01L23/49513 , H01L23/49562 , H01L23/498 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/05147 , H01L2224/05639 , H01L2224/05655 , H01L2224/27334 , H01L2224/29005 , H01L2224/2901 , H01L2224/29078 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29124 , H01L2224/29138 , H01L2224/29139 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29163 , H01L2224/29164 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29173 , H01L2224/29176 , H01L2224/29178 , H01L2224/29181 , H01L2224/29184 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29324 , H01L2224/29338 , H01L2224/29339 , H01L2224/29355 , H01L2224/29357 , H01L2224/2936 , H01L2224/29363 , H01L2224/29364 , H01L2224/29366 , H01L2224/29369 , H01L2224/29371 , H01L2224/29373 , H01L2224/29376 , H01L2224/29378 , H01L2224/29381 , H01L2224/29384 , H01L2224/29387 , H01L2224/29893 , H01L2224/32225 , H01L2224/32245 , H01L2224/32505 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48739 , H01L2224/48755 , H01L2224/48839 , H01L2224/48855 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/83065 , H01L2224/83075 , H01L2224/832 , H01L2224/8384 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/13091 , H01L2924/15153 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/3511 , H01L2924/0541 , H01L2924/0501 , H01L2924/00014 , H01L2924/01001 , H01L2924/01018 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2924/2076 , H01L2924/01202 , H01L2224/83205
摘要： According to the present invention an electrically conductive bonding material comprises silver particles (202), silver oxides particles (203), a dispersant comprising an organic material containing not more than 30 carbon atoms, and an organic solvent having a boiling point of not higher than 350°C as essential components. The total amount of the silver particles (202), the silver oxide particles (203), the dispersant, and the organic solvent is 100 mass parts and an amount of the organic solvent is not more than 90 mass parts. The silver particles (202) are in flake form; and the total amount of the silver particles (202), the silver oxide particles (203), the dispersant, and the organic solvent is in a range of 99.0% to 100% by weight.
摘要翻译：。根据导电接合材料的本发明包括银颗粒（202），银氧化物粒子（203），分散剂包括含有不超过30碳原子的有机材料，和在有机溶剂中具有不高于沸点 350℃作为必须成分。银粒子（202）的总量中，氧化物的银颗粒（203），分散剂，有机溶剂为100质量份，并且对有机溶剂的量不超过90质量份。银粒子（202）是薄片形式; 和银颗粒（202）的总量中，氧化物的银颗粒（203），分散剂，有机溶剂是在由范围为99.0％至100％重量。

5. 发明公开

EP2717303A1 BONDED STRUCTURE 审中-公开
标题翻译： GEBUNDENE STRUKTUR
公开(公告)号：EP2717303A1
公开(公告)日：2014-04-09
申请号：EP12793525.2
申请日：2012-05-22
申请人： Panasonic Corporation
发明人： NAKAMURA, Taichi , KITAURA, Hidetoshi , YOSHIZAWA, Akihiro
IPC分类号： H01L21/52 , B23K1/00 , B23K1/20 , B23K35/14 , B23K35/26 , C22C12/00 , H01L23/34
CPC分类号： H01L23/49866 , B23K35/007 , B23K35/0233 , B23K35/264 , B32B15/01 , B32B15/016 , C22C5/06 , C22C5/08 , C22C9/00 , C22C12/00 , C22C13/00 , C22C13/02 , H01L23/3107 , H01L23/49513 , H01L23/49551 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L2224/04026 , H01L2224/05647 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/32507 , H01L2224/45014 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83075 , H01L2224/83101 , H01L2224/83191 , H01L2224/83203 , H01L2224/83439 , H01L2224/8382 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/15747 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00012 , H01L2924/00 , H01L2924/0105 , H01L2924/01047 , H01L2924/01082 , H01L2924/00015 , H01L2924/01083 , H01L2924/013 , H01L2924/01007 , H01L2224/45099 , H01L2224/83205
摘要： A bonded structure 106 includes a semiconductor element 102 bonded to a Cu electrode 103 with a bonding material 104 predominantly composed of Bi, wherein the semiconductor element 102 and the Cu electrode 103 are bonded to each other via a laminated body 209a that progressively increases a Young's modulus from the bonding material 104 to a bonded material (the semiconductor element 102 and the Cu electrode 103), achieving stress relaxation against a thermal stress generated in a temperature cycle during the use of a power semiconductor module.
摘要翻译：键合结构106包括：以主要由Bi构成的接合材料104与Cu电极103接合的半导体元件102，其中半导体元件102和Cu电极103通过层叠体209a彼此接合，层叠体209a逐渐增加杨氏从接合材料104到结合材料（半导体元件102和Cu电极103）的模量，在功率半导体模块的使用期间，在温度循环中产生的热应力获得应力松弛。

6. 发明公开

EP2519088A1 CONDUCTIVE CONNECTION MATERIAL, ELECTRONIC COMPONENT PRODUCING METHOD, AND ELECTRONIC MEMBER AND ELECTRONIC COMPONENT WITH CONDUCTIVE CONNECTION MATERIAL 审中-公开
标题翻译：导电连接料，法生产电子元件和电子元件和电子元件的导电连接材料
公开(公告)号：EP2519088A1
公开(公告)日：2012-10-31
申请号：EP10838919.8
申请日：2010-12-17
申请人： Sumitomo Bakelite Co., Ltd.
发明人： CHUMA,Toshiaki , KAGIMOTO, Tomohiro
IPC分类号： H05K3/34 , C09J9/02 , H01B5/02 , H01L21/60 , H01R11/01 , H01R43/00
CPC分类号： H05K3/3478 , C08L63/00 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05568 , H01L2224/1152 , H01L2224/29012 , H01L2224/29076 , H01L2224/29083 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/2912 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2916 , H01L2224/2919 , H01L2224/73104 , H01L2224/83191 , H01L2224/83192 , H01L2224/83205 , H01L2224/83801 , H01L2224/83862 , H01L2224/83885 , H01L2224/83886 , H01L2924/01012 , H01L2924/01029 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/3025 , H05K3/3489 , H05K3/4007 , H05K2203/0405 , H05K2203/0425 , H05K2203/043 , Y10T428/25 , Y10T428/31678 , Y10T428/31688 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is a conductive connecting material 30 used to form conductive portions on a plurality of terminals 11 of an electronic member having a substrate 10 and the plurality of terminals 11 provided on the substrate 10, comprising a metal layer 110 and a resin layer 120 having a resin component and a filler, in which the metal layer is aggregated on each of terminals to form the conductive portions on the plurality of terminals by bringing the conductive connecting material into contact with the plurality of terminals and heating the conductive connecting material.
摘要翻译：公开的是用于形成在具有基板10和设置在基板10端子11的多元性的电子部件的端子11的多个导电部的导电连接材料30，其包括一个金属层110和具有120的树脂层树脂成分和填料，其中，所述金属层被聚集在每个终端通过使导电连接材料与端子的多个接触并加热所述导电连接材料，以形成对端子的多个导电部分。

7. 发明授权

EP0880801B1 DIE ATTACHED SiC AND DIE ATTACH PROCEDURE FOR SiC 失效
标题翻译：安装的碳化硅DICE和方法用于固定的SiC DICE
公开(公告)号：EP0880801B1
公开(公告)日：2002-04-10
申请号：EP97905753.6
申请日：1997-01-31
申请人： Northrop Grumman Corporation
发明人： OSTOP, John, A. , CHEN, Li-Shu
IPC分类号： H01L21/58
CPC分类号： H01L24/83 , H01L24/29 , H01L2224/29111 , H01L2224/29155 , H01L2224/8319 , H01L2224/83801 , H01L2224/83805 , H01L2924/01005 , H01L2924/01006 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/01014 , H01L2924/00 , H01L2924/00015 , H01L2924/00014
摘要： Die attached SiC and a die attach procedure for SiC uses the scrubbing technique to bond a SiC die (10) to a package. A first layer is formed on the SiC die. This first layer, preferably of nickel (14), bonds to the SiC die. A second layer, preferably amorphous silicon (16), is then formed on the first layer. The second layer bonds to the first layer, and forms a eutectic with the material, usually gold, plating the package when the SiC die is scrubbed onto the package.

8. 发明授权

EP2642515B1 Semiconductor element and method of manufacturing the same 有权转让
标题翻译：半导体元件及其制造方法
公开(公告)号：EP2642515B1
公开(公告)日：2018-03-07
申请号：EP13001320.4
申请日：2013-03-15
申请人： Stanley Electric Co., Ltd.
发明人： Chinone, Takako , Miyachi, Mamoru , Saito, Tatsuma , Akagi, Takanobu
IPC分类号： H01L21/58 , H01L23/373 , H01L33/64 , H01L23/00 , H01L21/02 , H01L29/45 , H01L33/00
CPC分类号： H01L21/02425 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/45 , H01L33/0079 , H01L33/641 , H01L2224/29109 , H01L2224/29144 , H01L2224/29155 , H01L2224/83193 , H01L2224/83203 , H01L2224/83805 , H01L2924/013 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/0105 , H01L2924/01079 , H01L2924/00
摘要： A method of manufacturing a semiconductor element includes forming a first bonding layer (13) containing a metal, which forms a eutectic crystal with Au, on a first substrate (11) to provide a first laminated body. The method also includes forming an element structure layer having a semiconductor layer (23) on a second substrate (21). The method also includes forming a second bonding layer (25) on the element structure layer (23) to provide a second laminated body. The second bonding layer (25) has a metal underlayer (25A) containing a metal, which forms a eutectic crystal with Au. The second bonding layer also has a surface layer (25B) that contains Au. The method also includes performing heating pressure-bonding on the first and second laminated bodies with the first and second bonding layers facing each other. The heating temperature of the second substrate (21) in the heating pressure-bonding is higher than the heating temperature of the first substrate (11).

9. 发明公开

EP3069811A4 METAL BONDING STRUCTURE, METAL BONDING METHOD, AND METAL BONDING MATERIAL USING METAL NANOPARTICLES 审中-公开
公开(公告)号：EP3069811A4
公开(公告)日：2017-11-29
申请号：EP14859401
申请日：2014-11-11
申请人： NIPPON STEEL & SUMITOMO METAL CORP , UNIV WASEDA
发明人： TATSUMI KOHEI , ISHIKAWA SHINJI , MATSUBARA NORIE , TANAKA MASAMOTO
IPC分类号： B23K35/02 , B22F7/08 , B23K35/30 , H01L21/60 , H01L23/488
CPC分类号： H01L24/32 , B22F7/08 , B22F2999/00 , B23K35/0244 , B23K35/025 , B23K35/28 , B23K35/30 , B23K35/3033 , C22C5/06 , C22C5/08 , C22C19/00 , C22C21/00 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/03436 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/04026 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/2741 , H01L2224/29083 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29155 , H01L2224/29294 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/2949 , H01L2224/29639 , H01L2224/29644 , H01L2224/32227 , H01L2224/32245 , H01L2224/45144 , H01L2224/83055 , H01L2224/83065 , H01L2224/83075 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8384 , H01L2224/85207 , H01L2924/10253 , H01L2924/10272 , H01L2924/15738 , H01L2924/15747 , H01L2924/351 , H01L2924/3512 , H01L2924/00015 , B22F1/0018 , H01L2924/00014 , H01L2924/01029 , H01L2924/01014 , H01L2924/0104 , H01L2924/01026 , H01L2924/01025 , H01L2924/01047 , H01L2924/01015 , H01L2924/01079 , H01L2924/0103 , H01L2924/0105 , H01L2924/00012
摘要： The present invention can give a joining structure using metal nanoparticles to join the same types or different types of metal where when one surface metal is Al based, the parts are joined through a joining layer containing Ni nanoparticles, whereby a good joining strength is obtained. Further, by using two joining layers (6, 8) including metal nanoparticles to sandwich metal foil (7) so as to form a joining layer and joining the same type or different types of surface metals (3-4) through this joining layer, it is possible to ease the thermal stress due to the difference in amounts of thermal expansion of joined members which have two surface metals.

10. 发明公开

EP3176821A1 SEMICONDUCTOR DEVICE WITH A BARRIER LAYER FORMED BY ELECTROMIGRATION 审中-公开
标题翻译：有电因迁移生产的结半导体COMPONENT
公开(公告)号：EP3176821A1
公开(公告)日：2017-06-07
申请号：EP16197690.7
申请日：2016-11-08
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： KADOGUCHI, Takuya , TAKE, Naoya
IPC分类号： H01L23/488 , H01L21/60 , H01L25/18
CPC分类号： H01L23/49562 , H01L23/3121 , H01L23/4951 , H01L23/49568 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/33 , H01L25/072 , H01L25/18 , H01L29/7395 , H01L29/861 , H01L2224/291 , H01L2224/29111 , H01L2224/29116 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/32503 , H01L2224/33181 , H01L2224/83447 , H01L2224/83455 , H01L2224/83909 , H01L2924/014 , H01L2924/1203 , H01L2924/12032 , H01L2924/12036 , H01L2924/13055 , H02M7/003 , H01L2924/00014 , H01L2924/0105 , H01L2924/00012
摘要： A semiconductor device (10, 50) includes a semiconductor element (20, 70, 80, 90, 100) and an electrically conductive member (14, 66, 68, 74, 84). The semiconductor element (e.g. a diode (20, 90, 100) or an IGBT (70, 80)) is configured to allow an electric current to flow from a first electrode (21, 71, 81, 91, 101) to a second electrode (22, 72, 82, 92, 102) and prevent an electric current flowing from the second electrode (22, 72, 82, 92, 102) to the first electrode (21, 71, 81, 91, 101). The conductive member (14, 66, 68, 74, 84) is joined with the second electrode (22, 72, 82, 92, 102) (e.g., the cathode electrode of the diode (20, 90, 100) or the emitter electrode of the IGBT (70, 80)) via a solder joint layer (34, 77, 87, 98, 108). Surface of the second electrode (22, 72, 82, 92, 102) in contact with the solder joint layer (34, 77, 87, 98, 108) mainly comprises nickel, and surface of the conductive member (14, 66, 68, 74, 84) in contact with the solder joint layer (34, 77, 87, 98, 108) mainly comprises copper. The solder joint layer (34, 77, 87, 98, 108) comprises first and second compound layers (34a, 77a, 87a, 98a, 108a, 34c, 77c, 87c, 98c, 108c). The first compound layer (34a, 77a, 87a, 98a, 108a) is located at an interface with the second electrode (22, 72, 82, 92, 102) and comprises a nickel-tin based intermetallic compound. The second compound layer (34c, 77c, 87c, 98c, 108c) is located at an interface with the conductive member (14, 66, 68, 74, 84) and comprises a copper-tin based intermetallic compound. When electrons flow from the conductive member (14, 66, 68, 74, 84) toward the semiconductor element (20, 70, 80, 90, 100), the copper-tin based intermetallic compound that configures the second compound layer (34c, 77c, 87c, 98c, 108c) moves toward the first compound layer (34a, 77a, 87a, 98a, 108a) due to electromigration, and is deposited on the first compound layer (34a, 77a, 87a, 98a, 108a). Consequently, a barrier layer (34d, 77d, 87d, 98d, 108d) is formed on the first compound layer (34a, 77a, 87a, 98a, 108a).
摘要翻译：一种半导体器件（10，50）包括：半导体元件（20，70，80，90，100）和导电元件（14，66，68，74，84）的。半导体元件（例如，二极管（20，90，100）或IGBT（70，80））被配置为允许电流从第一电极（21，71，81，91，101）流向第二电极（22，72，82，92，102），并防止从所述第二电极（22，72，82，92，102）与第一电极（21，71，81，91，101）中流动的电流。导电构件（14，66，68，74，84）接合与所述第二电极（22，72，82，92，102）（例如，二极管（20，90的阴极电极，100）或发射极经由焊料接合层（34，77，87，98，108）的IGBT（70,80））的电极。与焊料接合层（34，77，87，98，108）接触的第二电极（22，72，82，92，102）的表面主要包括镍，并且所述导电构件（14，66，68的表面，74，84）与焊料接合层（34，77，87，98，108）接触主要包括铜。焊点层（34，77，87，98，108）包括第一和第二化合物层（34A，77A，87A，98A，108A，34C，77C，87C，98C，108C）。第一化合物层（34A，77A，87A，98A，108A）位于在与第二电极（22，72，82，92，102）接口，并包括镍 - 锡基于金属间化合物。第二化合物层（34C，77C，87C，98C，108C）位于在与所述导电元件（14，66，68，74，84）接口，并且包括铜 - 锡系金属间化合物。当电子从导电构件（14，66，68，74，84）朝向所述半导体元件（20，70，80，90，100）流动时，铜锡系金属间化合物没有配置第二化合物层（34C， 77C，87C，98C，108C）朝向第一化合物层（34A，77A，87A，98A移动，108A）由于电迁移，并沉积在第一化合物层（上图34A，77A，87A，98A，108A）。因此，阻挡层（34D，77D，87D，98D，108D）形成在第一化合物层（34A，77A，87A，98A，108A）。

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