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1. 发明公开

EP3282472A1 TRANSMISSION MEMBER AND PRESSURIZATION UNIT 无效
标题翻译：传动部件和加压部件
公开(公告)号：EP3282472A1
公开(公告)日：2018-02-14
申请号：EP15880667.9
申请日：2015-03-31
申请人： Shindengen Electric Manufacturing Co., Ltd.
发明人： MATSUBAYASHI, Ryo
IPC分类号： H01L21/52
CPC分类号： H01L24/75 , B23K1/0016 , B23K20/023 , B23K20/233 , B23K2101/42 , H01L21/52 , H01L24/29 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/75252 , H01L2224/75305 , H01L2224/75312 , H01L2224/75502 , H01L2224/7565 , H01L2224/75824 , H01L2224/83203
摘要： Provided is transferring members 110, 120 having a plate-like shape used in baking a metal particle paste 4 of an assembled body 20 formed by arranging an electronic part 2 on a substrate 1 with the metal particle paste 4 interposed therebetween by applying pressure to the assembled body 20 and by heating the assembled body 20, the transferring members 110, 120 being configured to sandwich the assembled body in baking the metal particle paste 4, wherein the transferring members 110, 120 are made of a material having thermal conductivity which falls within a range of from 1 to 200W/ (m·k) and Vickers hardness which falls within a range of from 180 to 2300kgf/mm 2 .
With such a configuration, it is possible to provide a transferring member for being used in a method of manufacturing a bonded body which can suppress the lowering of bonding property between a substrate and an electronic part and which can prevent the remarkable lowering of productivity of a bonded body.
摘要翻译：本发明提供一种转印部件110,120，该转印部件110,120具有用于烘焙通过将金属颗粒糊剂4置于衬底1上而形成的组合体20的金属颗粒糊剂4的板状形状，通过加热组装体20，转印部件110,120被配置为在烘烤金属颗粒糊4时夹住组装体，其中转印部件110,120由导热性落入其中的材料制成范围为1至200W /（m·k），维氏硬度范围为180至2300kgf / mm2。根据这样的结构，能够提供一种转印部件，该转印部件用于制造能够抑制基板与电子部件之间的接合性降低的接合体的制造方法，并且能够防止显着降低保税体。

2. 发明公开

EP2843692A4 SEMICONDUCTOR DEVICE FABRICATION METHOD, THERMALLY INSULATED LOAD JIG, AND THERMALLY INSULATED LOAD JIG MOUNTING METHOD 审中-公开
标题翻译：法半导体元件，隔热LOAD SPAN设备及其安装方法隔热LOAD JIG
公开(公告)号：EP2843692A4
公开(公告)日：2016-03-09
申请号：EP13782144
申请日：2013-04-24
申请人： NISSAN MOTOR
发明人： TANIMOTO SATOSHI , ZUSHI YUSUKE , MURAKAMI YOSHINORI , MATSUI KOHEI , SATO SHINJI , FUKUSHIMA YU
IPC分类号： H01L21/67 , H01L21/60 , H01L21/68
CPC分类号： H01L24/83 , B23K37/0426 , H01L24/05 , H01L24/29 , H01L24/75 , H01L24/97 , H01L2224/04026 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/2732 , H01L2224/291 , H01L2224/29118 , H01L2224/29144 , H01L2224/75101 , H01L2224/75305 , H01L2224/7531 , H01L2224/75314 , H01L2224/75315 , H01L2224/75317 , H01L2224/7532 , H01L2224/75756 , H01L2224/7598 , H01L2224/75981 , H01L2224/83022 , H01L2224/83048 , H01L2224/83075 , H01L2224/83101 , H01L2224/832 , H01L2224/83211 , H01L2224/83444 , H01L2224/83447 , H01L2224/83801 , H01L2224/83815 , H01L2224/97 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1037 , H01L2924/1067 , H01L2924/12032 , H01L2924/12036 , H01L2924/13062 , H01L2924/13091 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/3656 , H05K3/34 , H05K3/3431 , H05K13/0465 , H05K2203/0195 , H05K2203/0278 , H01L2924/00 , H01L2924/0542 , H01L2924/0103 , H01L2924/00014 , H01L2924/01042 , H01L2924/01032 , H01L2924/01014 , H01L2924/01013 , H01L2224/05655 , H01L2224/83 , H01L2924/00012
摘要： In a heat insulating load jig 11 of the present invention, a solder material 14 having a melting point or a solidus temperature in a range between a thermal resistance temperature of a semiconductor chip 13 and a temperature 100°C below the thermal resistance temperature is interposed between a circuit board 12 and the semiconductor chip 13; a heat insulating body 17 is placed on an upper side of the semiconductor chip 13 in this state; a metal weight 16 is disposed on the heat insulating body 17; and load is applied to the semiconductor chip 13 while the solder material 14 is melted and solidified.

4. 发明公开

EP2384103A1 ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER ELEKTRONISCHEN VORRICHTUNG ELEKTRONISCHE VORRICHTUNG
公开(公告)号：EP2384103A1
公开(公告)日：2011-11-02
申请号：EP09824572.3
申请日：2009-10-30
申请人： Sumitomo Bakelite Company Limited
发明人： MEURA, Toru , NIKAIDO, Hiroki , MAEJIMA, Kenzou , ISHIMURA, Yoji
IPC分类号： H05K3/34 , B23K1/00 , B23K3/00 , B23K35/363 , H01L21/60 , H05K3/28
CPC分类号： H05K3/305 , B23K1/0016 , B23K35/3613 , B23K35/362 , B23K2201/40 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/13111 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/75101 , H01L2224/7511 , H01L2224/75251 , H01L2224/75252 , H01L2224/75272 , H01L2224/75305 , H01L2224/75312 , H01L2224/75985 , H01L2224/81024 , H01L2224/81075 , H01L2224/81093 , H01L2224/81193 , H01L2224/8121 , H01L2224/81815 , H01L2224/81906 , H01L2224/83192 , H01L2224/834 , H01L2224/9211 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01059 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/15787 , H01L2924/181 , H05K3/3436 , H05K2201/10674 , H05K2201/10977 , H05K2203/074 , H05K2203/1189 , Y02P70/613 , Y10T428/24116 , Y10T428/24198 , Y10T428/2424 , Y10T428/31902 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/00014
摘要： Provided is a method of manufacturing an electronic device comprising a first electronic component having a first terminal and a second electronic component having a second terminal, wherein said first electric component is electrically connected to said second electronic component by connecting said first terminal to said second terminal with solder,
the method comprising, providing a resin layer having a flux action between said first terminal and said second terminal to obtain a laminate including said first electronic component, said second electronic component, and said resin layer, wherein a solder is provided on said first terminal or said second terminal; soldering said first terminal and said second terminal; and curing said resin layer while pressing said laminate with a pressurized fluid.
摘要翻译：提供了一种制造电子设备的方法，该电子设备包括具有第一端子的第一电子部件和具有第二端子的第二电子部件，其中所述第一电气部件通过将所述第一端子连接到所述第二端子而电连接到所述第二电子部件所述方法包括：在所述第一端子和所述第二端子之间提供具有助焊剂作用的树脂层，以获得包括所述第一电子部件，所述第二电子部件和所述树脂层的层压体，其中在所述第一端子和所述第二端子之间设置焊料第一终端或所述第二终端; 焊接所述第一端子和所述第二端子; 并在用加压流体压制所述层压体的同时固化所述树脂层。

5. 发明公开

EP3189541A1 SEMICONDUCTOR BONDING WITH COMPLIANT RESIN AND UTILIZING HYDROGEN IMPLANTATION FOR TRANSFER-WAFER REMOVAL 有权
标题翻译：半导体与顺应性树脂的结合和利用氢转移去除转移晶圆
公开(公告)号：EP3189541A1
公开(公告)日：2017-07-12
申请号：EP15837255.7
申请日：2015-09-02
申请人： Skorpios Technologies, Inc.
发明人： LAMBERT, Damien , SPANN, John , KRASULICK, Stephen
IPC分类号： H01L21/60
CPC分类号： H01L21/6835 , G02B6/4201 , H01L21/0274 , H01L21/2007 , H01L21/683 , H01L21/76254 , H01L24/03 , H01L24/27 , H01L24/75 , H01L24/83 , H01L24/89 , H01L24/94 , H01L24/95 , H01L2221/68313 , H01L2221/68318 , H01L2221/6834 , H01L2221/68354 , H01L2221/68368 , H01L2221/68381 , H01L2224/0362 , H01L2224/75305 , H01L2224/75315 , H01L2224/80201 , H01L2224/83001 , H01L2224/83203 , H01L2225/06593 , H01L2924/01014 , H01L2924/1032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/15738
摘要： A transfer substrate with a compliant resin is used to bond one or more chips to a target wafer. An implant region is formed in a transfer substrate. A portion of the transfer substrate is etched to form a riser. Compliant material is applied to the transfer substrate. A chip is secured to the compliant material, wherein the chip is secured to the compliant material above the riser. The chip is bonded to a target wafer while the chip is secured to the compliant material. The transfer substrate and compliant material are removed from the chip. The transfer substrate is opaque to UV light.
摘要翻译：使用具有柔性树脂的转移基板来将一个或多个芯片结合到目标晶圆。注入区域形成在转移基板中。转移衬底的一部分被蚀刻以形成立管。合格的材料被施加到转印基材上。芯片被固定到柔性材料，其中芯片被固定到立管上方的柔性材料。当芯片被固定到柔性材料上时，芯片被结合到目标晶圆。转移衬底和柔性材料从芯片上移除。转印基材对UV光不透明。

6. 发明公开

EP3098837A2 DIE BONDING APPARATUS COMPRISING THREE INERT GAS CONTAINERS 有权转让
标题翻译：芯片连接设备，包括三种惰性气体
公开(公告)号：EP3098837A2
公开(公告)日：2016-11-30
申请号：EP16001177.1
申请日：2016-05-24
申请人： ASM Technology Singapore Pte Ltd.
发明人： LAU, Siu Wing , HUNG, Kin Yik , AU, Yuk Cheung , LAI, Wing Chiu , LEE, Man Leo , GO, Sai Yuen
IPC分类号： H01L21/67 , H01L21/603
CPC分类号： H01L24/75 , H01L21/67742 , H01L24/81 , H01L2224/7501 , H01L2224/751 , H01L2224/75101 , H01L2224/75251 , H01L2224/75252 , H01L2224/75305 , H01L2224/7565 , H01L2224/75804 , H01L2224/75821 , H01L2224/75824 , H01L2224/75841 , H01L2224/759 , H01L2224/81011 , H01L2224/81022 , H01L2224/81024 , H01L2224/81075 , H01L2224/81093 , H01L2224/81203 , H01L2924/00012
摘要： A die bonding apparatus (10) comprises a first inert gas container (40) having a first inert gas concentration and a second inert gas container (50) having a second inert gas concentration enclosed within the first inert gas container (40). The second inert gas concentration is higher than the first inert gas concentration. The die bonding apparatus (10) further comprises a bond head (52) located in the second inert gas container (50) for receiving a die (24) for bonding and a third inert gas container (80) having an inert gas environment that is separate from the first and second inert gas containers (40, 50) and where a substrate (26) is locatable for die bonding. The bond head (52) is operative to move the die (24) between a first position within the second inert gas container (50) and a second position within the third inert gas container (80) to bond the die (24) onto the substrate (26) located in the third inert gas container (80). The third inert gas container (80) may comprise a portion of a bond stage (60) enclosed by the walls (62) on the sides, by a bond stage pedestal (66) on the bottom and by the first inert gas container (40) base plate (42) on the top. The bond stage (60) is movable for receiving the substrate (26) to be processed and below the first inert gas container (40). The bond stage walls (62) may comprise a plurality of inert gas outlets (64, 68, 69) for expelling inert gas towards the first inert gas container (40) to form an air curtain to restrict ambient air from entering the third inert gas container (80).

7. 发明公开

EP1940732A1 CONTROLLING BOND FRONTS IN WAFER-SCALE PACKAGING 审中-公开
标题翻译：民事头版在包装晶片级上控制
公开(公告)号：EP1940732A1
公开(公告)日：2008-07-09
申请号：EP06800586.7
申请日：2006-07-31
申请人： Hewlett-Packard Development Company, L.P.
发明人： CHEN, Chien-Hua , SAND, Kirby , JOHN, Bradley, Charles
IPC分类号： B81C5/00 , H01L21/00 , G02B26/08
CPC分类号： B81C1/00269 , H01L21/67092 , H01L2224/75305 , H01L2924/1461 , H01L2924/00
摘要： A system for controlling bond front propagation in wafer-scale packaging includes a first substrate, a second substrate, and a bonder pressure plate having protruded structures thereon to selectively establish at least one point of contact between the first and second substrates to initiate a bond front therebetween. The protruded structures are selectively configured to control the propagation of the bond front.

8. 发明公开

EP3208828A1 METHOD FOR BONDING SUBSTRATES TOGETHER, AND SUBSTRATE BONDING DEVICE 审中-公开
标题翻译：将基材粘合在一起的方法和基材粘合装置
公开(公告)号：EP3208828A1
公开(公告)日：2017-08-23
申请号：EP15849856.8
申请日：2015-10-19
申请人： Bondtech Co., Ltd.
发明人： YAMAUCHI Akira
IPC分类号： H01L21/02 , B23K20/00 , B23K20/16 , B23K20/24 , H01L21/68 , H01L21/683
CPC分类号： H01L24/83 , B23K20/023 , B23K20/233 , B23K20/24 , B23K37/0408 , B23K37/047 , B23K2201/40 , B23K2203/50 , H01L21/187 , H01L21/67092 , H01L21/67259 , H01L21/68 , H01L21/6831 , H01L21/6838 , H01L21/68735 , H01L23/544 , H01L24/75 , H01L24/80 , H01L24/94 , H01L2223/54426 , H01L2224/08145 , H01L2224/08146 , H01L2224/7501 , H01L2224/75102 , H01L2224/75251 , H01L2224/75252 , H01L2224/75272 , H01L2224/75303 , H01L2224/75305 , H01L2224/757 , H01L2224/75701 , H01L2224/75702 , H01L2224/75704 , H01L2224/75705 , H01L2224/75724 , H01L2224/75725 , H01L2224/75744 , H01L2224/75745 , H01L2224/75753 , H01L2224/759 , H01L2224/75901 , H01L2224/7592 , H01L2224/75981 , H01L2224/80012 , H01L2224/80013 , H01L2224/8003 , H01L2224/80047 , H01L2224/8009 , H01L2224/8013 , H01L2224/80132 , H01L2224/80203 , H01L2224/80213 , H01L2224/80893 , H01L2224/80895 , H01L2224/80896 , H01L2224/80907 , H01L2224/80908 , H01L2224/80986 , H01L2224/83009 , H01L2224/8309 , H01L2224/83896 , H01L2224/83908 , H01L2224/94 , H01L2924/00012 , H01L2224/80 , H01L2924/00014 , H01L2224/8001 , H01L2224/80009 , H01L2224/80121
摘要： A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition,.
摘要翻译：当基板粘合在一起时防止了基板之间的空隙的产生，并且基板以高的位置精度粘合在一起，同时抑制了应变。第一基板和第二基板的接合方法包括：进行亲水化处理以使水或含OH物质附着于第一基板的接合面和第二基板的接合面的步骤;将第一基板和第二基板的接合面所述基板和所述第二基板的各自的接合表面彼此面对，并且以所述接合表面的中心部分相对于所述接合表面的外周部分朝向所述第二基板侧突出的方式弯曲所述第一基板;步骤在各个中央部分处使第一基板的接合表面与第二基板的接合表面邻接的步骤;以及跨越整个接合表面将第一基板的接合表面与第二基板的接合表面邻接的步骤减小第一衬底的外圆周部分和外圆周之间的距离在保持非粘合状态的压力下，所述第二基底的各个中央部分彼此邻接。

9. 发明公开

EP3098837A3 DIE BONDING APPARATUS COMPRISING THREE INERT GAS CONTAINERS 有权转让
标题翻译： TER TER TER TER TER TER TER TER TER TER TER TER TER TER TER TER TER TER
公开(公告)号：EP3098837A3
公开(公告)日：2017-02-08
申请号：EP16001177.1
申请日：2016-05-24
申请人： ASM Technology Singapore Pte Ltd.
发明人： LAU, Siu Wing , HUNG, Kin Yik , AU, Yuk Cheung , LAI, Wing Chiu , LEE, Man Leo , GO, Sai Yuen
IPC分类号： H01L21/67 , H01L21/603
CPC分类号： H01L24/75 , H01L21/67742 , H01L24/81 , H01L2224/7501 , H01L2224/751 , H01L2224/75101 , H01L2224/75251 , H01L2224/75252 , H01L2224/75305 , H01L2224/7565 , H01L2224/75804 , H01L2224/75821 , H01L2224/75824 , H01L2224/75841 , H01L2224/759 , H01L2224/81011 , H01L2224/81022 , H01L2224/81024 , H01L2224/81075 , H01L2224/81093 , H01L2224/81203 , H01L2924/00012
摘要： A die bonding apparatus (10) comprises a first inert gas container (40) having a first inert gas concentration and a second inert gas container (50) having a second inert gas concentration enclosed within the first inert gas container (40). The second inert gas concentration is higher than the first inert gas concentration. The die bonding apparatus (10) further comprises a bond head (52) located in the second inert gas container (50) for receiving a die (24) for bonding and a third inert gas container (80) having an inert gas environment that is separate from the first and second inert gas containers (40, 50) and where a substrate (26) is locatable for die bonding. The bond head (52) is operative to move the die (24) between a first position within the second inert gas container (50) and a second position within the third inert gas container (80) to bond the die (24) onto the substrate (26) located in the third inert gas container (80). The third inert gas container (80) may comprise a portion of a bond stage (60) enclosed by the walls (62) on the sides, by a bond stage pedestal (66) on the bottom and by the first inert gas container (40) base plate (42) on the top. The bond stage (60) is movable for receiving the substrate (26) to be processed and below the first inert gas container (40). The bond stage walls (62) may comprise a plurality of inert gas outlets (64, 68, 69) for expelling inert gas towards the first inert gas container (40) to form an air curtain to restrict ambient air from entering the third inert gas container (80).
摘要翻译：芯片接合装置（10）包括具有第一惰性气体浓度的第一惰性气体容器（40）和封闭在第一惰性气体容器（40）内的第二惰性气体浓度的第二惰性气体容器（50）。第二惰性气体浓度高于第一惰性气体浓度。芯片接合装置（10）还包括位于第二惰性气体容器（50）中的用于接收用于接合的模具（24）的接合头（52）和具有惰性气体环境的第三惰性气体容器（80）与第一和第二惰性气体容器（40,50）分离，并且其中基板（26）可定位用于管芯接合。接合头（52）可操作以使模具（24）在第二惰性气体容器（50）内的第一位置和第三惰性气体容器（80）内的第二位置之间移动，以将模具（24）接合到基板（26）位于第三惰性气体容器（80）中。第三惰性气体容器（80）可以包括由侧壁上的壁（62）包围的结合台（60）的一部分，底部上的结合台基座（66）和第一惰性气体容器（40））底板（42）。接合台（60）可移动以接收待处理的基板（26）并在第一惰性气体容器（40）的下方。结合阶段壁（62）可以包括多个惰性气体出口（64,68,69），用于朝向第一惰性气体容器（40）排出惰性气体，以形成空气幕，以限制环境空气进入第三惰性气体容器（80）。

10. 发明公开

EP2843692A1 SEMICONDUCTOR DEVICE FABRICATION METHOD, THERMALLY INSULATED LOAD JIG, AND THERMALLY INSULATED LOAD JIG MOUNTING METHOD 审中-公开
标题翻译：法半导体元件，隔热LOAD SPAN设备及其安装方法隔热LOAD JIG
公开(公告)号：EP2843692A1
公开(公告)日：2015-03-04
申请号：EP13782144.3
申请日：2013-04-24
申请人： Nissan Motor Co., Ltd
发明人： TANIMOTO, Satoshi , ZUSHI, Yusuke , MURAKAMI, Yoshinori , MATSUI, Kohei , SATO, Shinji , FUKUSHIMA, Yu
IPC分类号： H01L21/52 , H05K13/04
CPC分类号： H01L24/83 , B23K37/0426 , H01L24/05 , H01L24/29 , H01L24/75 , H01L24/97 , H01L2224/04026 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/2732 , H01L2224/291 , H01L2224/29118 , H01L2224/29144 , H01L2224/75101 , H01L2224/75305 , H01L2224/7531 , H01L2224/75314 , H01L2224/75315 , H01L2224/75317 , H01L2224/7532 , H01L2224/75756 , H01L2224/7598 , H01L2224/75981 , H01L2224/83022 , H01L2224/83048 , H01L2224/83075 , H01L2224/83101 , H01L2224/832 , H01L2224/83211 , H01L2224/83444 , H01L2224/83447 , H01L2224/83801 , H01L2224/83815 , H01L2224/97 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1037 , H01L2924/1067 , H01L2924/12032 , H01L2924/12036 , H01L2924/13062 , H01L2924/13091 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/3656 , H05K3/34 , H05K3/3431 , H05K13/0465 , H05K2203/0195 , H05K2203/0278 , H01L2924/00 , H01L2924/0542 , H01L2924/0103 , H01L2924/00014 , H01L2924/01042 , H01L2924/01032 , H01L2924/01014 , H01L2924/01013 , H01L2224/05655 , H01L2224/83 , H01L2924/00012
摘要： In a heat insulating load jig 11 of the present invention, a solder material 14 having a melting point or a solidus temperature in a range between a thermal resistance temperature of a semiconductor chip 13 and a temperature 100°C below the thermal resistance temperature is interposed between a circuit board 12 and the semiconductor chip 13; a heat insulating body 17 is placed on an upper side of the semiconductor chip 13 in this state; a metal weight 16 is disposed on the heat insulating body 17; and load is applied to the semiconductor chip 13 while the solder material 14 is melted and solidified.
摘要翻译：在本发明中，具有在半导体芯片13的热电阻温度和温度100℃以下的热电阻温度之间的范围内的熔点或固相线温度的焊料材料14的热绝缘负荷夹具11夹一电路板12和半导体芯片13之间; 隔热体17在这种状态下，半导体芯片13的上侧被置于; 金属重物16设置在绝热体17; 并且在焊接材料14被熔融固化负载被施加到半导体芯片13。

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