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2. 发明公开

EP3243794A1 A METHOD OF MAKING AN ARRAY OF SENSOR PIXELS, AND ASSOCIATED APPARATUS AND METHODS 审中-公开
标题翻译：一种制造传感器像素阵列的方法以及相关装置和方法
公开(公告)号：EP3243794A1
公开(公告)日：2017-11-15
申请号：EP16168895.7
申请日：2016-05-10
申请人： Emberion Oy
发明人： Bower, Chris , White, Richard , Liu, Yinglin , Rushton, Ashley
IPC分类号： B82Y10/00 , B82Y15/00 , H01L21/02 , H01L29/66 , H01L27/146 , H01L29/16
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y15/00 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L27/1461 , H01L27/14616 , H01L29/66015
摘要： A method (Fig. 4) of making an array of sensor pixels, the method comprising:
- forming an array of nucleation sites (415) on a growth substrate (Step 2), each nucleation site configured to facilitate the growth of a respective domain of channel material on the growth substrate and the array of nucleation sites having a predefined configuration corresponding to an arrangement of pixel regions on a target substrate;
- growing an array of domains (416) of channel material on the growth substrate from the array of respective nucleation sites to form a layer of channel material (step 3); - transferring the layer of channel material onto the target substrate such that the domains of channel material are substantially aligned with the pixel regions of the target substrate (step 6), to allow the formation of a pixel array.
Each pixel (Fig. 1) of the array comprises source (101) and drain (102) electrodes configured to enable a flow of electrical current through a respective domain of channel material (103), and a functionalising material (104) on the domain of channel material configured to produce a detectable change in the flow of electrical current on exposure to a physical stimulus which is indicative of one or more of the presence and magnitude of the physical stimulus.
In particular, the channel material (103) may be graphene or another two-dimensional material, and the functionalising material (104) may be quantum dots (107).
摘要翻译：一种制作传感器像素阵列的方法（图4），该方法包括： - 在生长衬底上形成成核位点阵列（415）（步骤2），每个成核位点被配置为促进相应域的生长在生长衬底上的沟道材料和具有与目标衬底上的像素区域的排列对应的预定义配置的成核位点阵列; - 从各个成核位点阵列在生长衬底上生长沟道材料的阵列域（416）以形成沟道材料层（步骤3）; - 将沟道材料层转移到目标衬底上，使得沟道材料的畴基本上与目标衬底的像素区域对准（步骤6），以允许形成像素阵列。阵列的每个像素（图1）包括被配置为使电流能够流过通道材料（103）的相应区域的源极（101）和漏极（102）电极，以及该区域上的官能化材料沟道材料被配置为在暴露于指示物理刺激的存在和量值中的一个或多个的物理刺激时产生电流的可检测变化。特别地，沟道材料（103）可以是石墨烯或另一种二维材料，并且功能化材料（104）可以是量子点（107）。

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