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1. 发明授权

EP2654071B1 Réacteur plasma de type capacitif pour le dépôt de films minces 有权转让
标题翻译：用于沉积薄膜的电容式等离子体反应器
公开(公告)号：EP2654071B1
公开(公告)日：2018-02-14
申请号：EP13163786.0
申请日：2013-04-15
申请人： INDEOtec SA
发明人： Jeanneret, Fabrice , Shojaei, Omid Reza , Schmitt, Jacques
IPC分类号： H01J37/32 , C23C16/509 , H01L21/02
CPC分类号： C23C16/5096 , H01J37/32091 , H01J37/32385 , H01J37/32541 , H01J37/32568 , H01J37/32871 , H01J2237/3323

2. 发明公开

EP3263737A1 MACROPARTICLE FILTER DEVICE AND METHOD FOR USE IN CATHODIC ARC DEPOSITION 有权
标题翻译：用于阴极电弧沉积的大颗粒过滤器装置和方法
公开(公告)号：EP3263737A1
公开(公告)日：2018-01-03
申请号：EP16001452.8
申请日：2016-06-29
申请人： Oerlikon Surface Solutions AG, Pfäffikon
发明人： Ramm, Juergen , Widrig, Beno , Rachbauer, Richard
IPC分类号： C23C14/32 , H01J37/32 , H01J37/34
CPC分类号： C23C14/22 , C23C14/0605 , C23C14/0641 , C23C14/067 , C23C14/14 , C23C14/325 , C23C14/564 , H01J37/32055 , H01J37/32422 , H01J37/32614 , H01J37/32853 , H01J37/32871 , H01J37/34 , H01M4/02 , H01M2004/028
摘要： The present invention discloses a macroparticle filter device (2) for cathodic arc evaporation, to be placed between at least one arc evaporation source (1) and at least one substrate (9) exhibiting at least a surface to be coated with material evaporated from a cathode of the arc evaporation source (1) in a vacuum coating chamber, wherein the macroparticle filter device (2) comprises one or more filter components that can prevent macroparticles (3) emitted by the cathode during cathodic arc evaporation to arrive at the substrate surface to be coated, characterized in that, the at least one component is provided as one or more flexible sheets that block the lineal way of the macroparticles (3) from the cathode to the substrate surface to be coated. Further a method for utilizing said macroparticle filter device (2) is presented.
摘要翻译：本发明公开了一种用于阴极电弧蒸发的大颗粒过滤装置（2），该过滤装置置于至少一个电弧蒸发源（1）和至少一个基底（9）之间，该基底至少具有待涂覆表面，其中所述大颗粒过滤器装置（2）包括一个或多个过滤器部件，所述过滤器部件能够防止在阴极电弧蒸发期间由所述阴极发射的大颗粒（3）到达所述基底表面其特征在于，所述至少一个部件设置为一个或多个柔性片，所述一个或多个柔性片阻止大颗粒（3）从阴极到待涂覆的基底表面的直线路径。还提出了一种利用所述大颗粒过滤装置（2）的方法。

3. 发明授权

EP2415897B1 INSULATOR-INTERPOSED TYPE PLASMA PROCESSING APPARATUS 有权
标题翻译：绝缘体插入式等离子体处理装置
公开(公告)号：EP2415897B1
公开(公告)日：2017-07-05
申请号：EP10758321.3
申请日：2010-02-10
申请人： Ferrotec Corporation
发明人： SHIINA, Yuichi
IPC分类号： C23C14/24 , H05H1/48 , H01J37/32 , C23C14/32
CPC分类号： H01J37/32422 , C23C14/325 , C23C14/564 , H01J37/32055 , H01J37/32357 , H01J37/32376 , H01J37/32669 , H01J37/32871

4. 发明公开

EP2954758A1 SOURCE DE PLASMA 有权转让
标题翻译：源于等离子体
公开(公告)号：EP2954758A1
公开(公告)日：2015-12-16
申请号：EP13704058.0
申请日：2013-02-06
申请人： Arcelormittal Investigaçion y Desarrollo, SL
发明人： DUMINICA, Florin Daniel , LECLERCQ, Vincent , SILBERBERG, Eric , DANIEL, Alain
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32871 , C23C16/50 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32623 , H01J37/3266 , H01J37/32669 , H01J2237/3321 , H01J2237/3323 , H05H1/46 , H05H2001/466
摘要： The invention relates to a plasma source (1) for depositing a coating onto a substrate (9), which is connectable to a power source (P) and includes: an electrode (2); a magnetic assembly (4) located circumferentially relative to said electrode and including a set of magnets mutually connected by a magnetic bracket (46) including a first and second central magnet (43, 44) and at least one head magnet (45); and an electrically insulating enclosure (5) arranged such as to surround the electrode and the magnets.
摘要翻译：本发明涉及一种用于将涂层沉积到基底（9）上的等离子体源（1），该基底可连接到电源（P）并包括：电极（2）; 相对于所述电极在圆周上定位的磁性组件（4），所述磁性组件（4）包括由磁性支架（46）相互连接的一组磁体，所述磁性支架包括第一和第二中央磁体（43,44）和至少一个磁头磁体（45）和布置成围绕电极和磁体的电绝缘外壳（5）。

5. 发明公开

EP2413349A1 PLASMA PROCESSING APPARATUS AND METHOD OF PRODUCING AMORPHOUS SILICON THIN FILM USING SAME 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER AMORPHENSILICIUMDÜNNSCHICHTDAMIT的PLASMAVERARBEITUNGSVORRICHTUNG
公开(公告)号：EP2413349A1
公开(公告)日：2012-02-01
申请号：EP10755897.5
申请日：2010-03-15
申请人： Toray Industries, Inc.
发明人： SAKAMOTO, Keitaro , NOMURA, Fumiyasu , KOMORI, Tsunenori
IPC分类号： H01L21/205 , H01L31/04
CPC分类号： C23C16/24 , C23C16/45565 , C23C16/5096 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32834 , H01J37/32871 , H01L21/02422 , H01L21/02532 , H01L31/03767 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： Disclosed is a plasma processing apparatus, wherein a plasma-generating electrode has a plurality of gas exhaust holes which run through the plasma-generating electrode from the surface facing a substrate held by a substrate-holding mechanism, and reach a gas exhaust chamber; gas-feeding pipes, provided connected to a gas-introducing pipe, have gas-feeding ports for discharging source gas toward the inside of the plurality of gas exhaust holes; and the gas-feeding pipes and the gas-feeding ports are arranged in a manner such that extended lines, representing the direction of the flow of the source gas discharged from the gas-feeding ports, intersect the end surface open regions at the interface of the gas exhaust chamber to the gas exhaust holes. Also disclosed is a method of producing the amorphous silicon thin film using the plasma processing apparatus.
摘要翻译：公开了一种等离子体处理装置，其中等离子体产生电极具有多个排气孔，其从面向由基板保持机构保持的基板的表面穿过等离子体产生电极，并到达排气室; 与气体导入管连接的供气管具有朝向多个排气孔的内部排出源气体的气体供给口; 气体供给管和气体供给口的排列方式使得从气体供给口排出的源气体的流动方向的延长线与端面开口区域相交，排气室到排气孔。还公开了使用等离子体处理装置制造非晶硅薄膜的方法。

6. 发明公开

EP2308075A2 PARTICLE TRAP FOR A PLASMA SOURCE 审中-公开
标题翻译：颗粒捕集器等离子源
公开(公告)号：EP2308075A2
公开(公告)日：2011-04-13
申请号：EP09770783.0
申请日：2009-06-17
申请人： MKS Instruments, Inc.
发明人： SHAJII, Ali , CHEN, Xing , COWE, Andrew , BURTNER, David , ENTLEY, William, Robert , SHAO, Shouqian
IPC分类号： H01J37/32
CPC分类号： H01J37/32357 , H01J37/32871 , Y10S55/15 , Y10T29/4935
摘要： A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.

7. 发明公开

EP1715505A1 Method and device for manipulating particles in plasma 审中-公开
标题翻译：埃菲姆等离子体中的Verfahren und Vorrichtung zum Manipulieren vonTeilchen
公开(公告)号：EP1715505A1
公开(公告)日：2006-10-25
申请号：EP05008521.6
申请日：2005-04-19
申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
发明人： Annaratone, Beatrice Maria
IPC分类号： H01J37/32 , C23C14/00 , H05H1/18
CPC分类号： H01J37/32871
摘要： A method for manipulating particles in a plasma device (100) including at least one manipulator electrode (31, 32), comprises the steps of generating a plasma (1) and subjecting the manipulator electrode (31, 32) to a high frequency manipulation voltage for manipulating particles contained in the plasma (1), wherein at least one of a manipulation voltage frequency of the manipulation voltage and a plasma sheath resonance frequency of the plasma is adjusted so that both frequencies have a predetermined relationship. A plasma device (100) for carrying this method out is described.
摘要翻译：一种用于操纵包括至少一个操纵器电极（31,32）的等离子体装置（100）中的颗粒的方法，包括以下步骤：产生等离子体（1）并使机械手电极（31,32）经受高频操纵电压用于操纵包含在等离子体（1）中的颗粒，其中调节操作电压的操作电压频率和等离子体的等离子体鞘共振频率中的至少一个，使得两个频率具有预定的关系。描述了用于携带该方法的等离子体装置（100）。

8. 发明公开

EP1612840A2 Method and apparatus for photomask plasma etching 审中-公开
标题翻译： Verfahren und VorrichtungfürdasÄtzenvon Photomasken
公开(公告)号：EP1612840A2
公开(公告)日：2006-01-04
申请号：EP05252818.9
申请日：2005-05-09
申请人： APPLIED MATERIALS, INC.
发明人： Kumar, Ajay , Chandrachood, Madhavi , Anderson, Scott Alan , Satitpunwaycha, Peter , Yau, Wai Fan
IPC分类号： H01J37/32
CPC分类号： H01J37/32651 , G03F1/80 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32871 , H01J2237/0225
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber (102) having a substrate support pedestal (124) adapted to receive a photomask substrate thereon. An ion-radical shield (170) is disposed above the pedestal (124). A substrate (122) is placed upon the pedestal beneath the ion-radical shield (170). A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，蚀刻光掩模的方法包括提供具有适于在其上接收光掩模基板的基板支撑基座（124）的处理室（102）。离子基屏蔽（170）设置在基座（124）的上方。衬底（122）被放置在离子自由基屏蔽（170）下面的基座上。工艺气体被引入到处理室中，并且从处理气体形成等离子体。基底主要用通过屏蔽的自由基进行蚀刻。

9. 发明授权

EP1111084B1 Pretreatment process for plasma immersion ion implantation 有权
标题翻译：过程用于预处理的等离子体浸没离子注入
公开(公告)号：EP1111084B1
公开(公告)日：2004-03-24
申请号：EP00311393.3
申请日：2000-12-19
申请人： Axcelis Technologies, Inc.
发明人： Bernstein, James David , Kellerman, Peter Lawrence , Denholm, Stuart A.
IPC分类号： C23C14/02 , C23C14/04
CPC分类号： H01J37/32412 , C23C14/042 , C23C14/48 , H01J37/32174 , H01J37/32311 , H01J37/32422 , H01J37/32871 , H01L21/2236 , H01L21/266

10. 发明公开

EP0840365A3 High pressure plasma oxide etch process 失效
标题翻译： Verfahren zumÄtzeneiner Oxids mit einer Hochdruckplasma
公开(公告)号：EP0840365A3
公开(公告)日：2003-10-29
申请号：EP97308222.5
申请日：1997-10-16
申请人： Applied Materials, Inc.
发明人： Collins, Kenneth , Groechel, David , Hung, Raymond , Rice, Michael , Yin, Gerald Zheyao , Ding, Jian , Cui, Chunshi
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01L21/02063 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 10 10 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds 1/10 of the gap between the inductive antenna and the workpiece.
摘要翻译：本发明体现在一种在等离子体反应器室中处理半导体工件的方法，包括以足以自动维持气体压力的第一流量将至少包含至少含有碳和氟的聚合物和蚀刻剂前体气体供应到室中室在低于约20mT的低压范围内，以相对于前体的总气体流速足够约一半或更多的第二流量向腔室供应相对非反应性气体，与前体的第一流速相结合气体，以保持室内的气体压力在高于20mT的高压范围内，并且将等离子体源功率施加到室中以形成离子密度超过每立方厘米10 10离子的高离子密度等离子体。在本发明的一个应用中，工件包括通过该方法蚀刻的含氧覆层和不受蚀刻保护的非含氧底层，前体气体在等离子体中解离成含氟蚀刻剂，其蚀刻含氧层和积聚在非含氧底层上的含碳聚合物种类。或者，高压范围可以被定义为感应场的皮肤深度超过感应天线和工件之间间隙的1/10的压力。

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