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1. 发明授权

EP2932523B1 PLASMAQUELLE 有权转让
标题翻译：等离子体源
公开(公告)号：EP2932523B1
公开(公告)日：2017-02-15
申请号：EP13802538.2
申请日：2013-12-09
申请人： Oerlikon Surface Solutions AG, Pfäffikon
发明人： KRASSNITZER, Siegfried , HAGMANN, Juerg
IPC分类号： H01J37/32
CPC分类号： H01J37/3233 , C23C16/50 , H01J37/3244 , H01J37/32596 , H01J2237/3321 , H05H1/50

2. 发明公开

EP2932523A1 PLASMAQUELLE 有权转让
公开(公告)号：EP2932523A1
公开(公告)日：2015-10-21
申请号：EP13802538.2
申请日：2013-12-09
申请人： Oerlikon Surface Solutions AG, Trübbach
发明人： KRASSNITZER, Siegfried , HAGMANN, Juerg
IPC分类号： H01J37/32
CPC分类号： H01J37/3233 , C23C16/50 , H01J37/3244 , H01J37/32596 , H01J2237/3321 , H05H1/50
摘要： The present invention relates to a plasma generating device comprising a plasma source having a plasma source hollow body (1) and an electron emission unit (5) which makes it possible to emit free electrons into the plasma source hollow body, wherein the plasma source hollow body (1) has a first gas inlet (7a) and a plasma source opening (10) which forms an opening to a vacuum chamber, and further comprising an anode having an anode hollow body (2), wherein the anode hollow body (2) has a second gas inlet (7b) and an anode opening (11) which forms an opening to the vacuum chamber, and a voltage source (8) the negative pole of which is connected to the electron emission unit (5) and the positive pole of which is connected to the anode hollow body (2), wherein the positive pole of the voltage source (8) is additionally electrically connected by means of a first shunt (6a) to the plasma source hollow body.
摘要翻译：本发明涉及一种等离子体发生装置，其包括具有等离子体源空心体（1）和电子发射单元（5）的等离子体源，该电子发射单元使得有可能将自由电子发射到等离子体源空心体中，其中等离子体源空心（1）具有形成真空室开口的第一气体入口（7a）和等离子体源开口（10），并且还包括具有阳极中空体（2）的阳极，其中阳极中空体（2））具有形成真空室开口的第二气体入口（7b）和阳极开口（11），以及负极连接到电子发射单元（5）的电压源（8），并且正极其极与阳极中空体（2）连接，其中电压源（8）的正极通过第一分流器（6a）附加地电连接到等离子体源中空体。

3. 发明公开

EP2401232A4 COAXIAL HOLLOW CATHODE PLASMA ASSISTED DIRECTED VAPOR DEPOSITION AND RELATED METHOD THEREOF 有权
标题翻译：同轴空心阴极等离子体辅助蒸发取向和相关程序
公开(公告)号：EP2401232A4
公开(公告)日：2015-04-01
申请号：EP10746778
申请日：2010-02-24
申请人： UNIV VIRGINIA PATENT FOUND , FRAUNHOFER GES ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E V
发明人： WADLEY HAYDN N G , MATTAUSCH GOESTA , MORGNER HENRY , ROEGNER FRANK-HOLM
IPC分类号： C01B33/12 , C23C16/513 , H01J37/305 , H01J37/32 , H01J37/34 , H05H1/24
CPC分类号： H01J37/32596 , C23C14/228 , C23C14/246 , C23C14/30 , C23C14/32 , H01J37/3053 , H01J37/32055 , H01J37/3233 , H01J37/32339 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/34 , H01J2237/332
摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

4. 发明公开

EP2808885A1 Precursor for planar deprocessing of semiconductor devices using a focused ion beam 有权
标题翻译：使用聚焦离子束用于半导体器件的平面解处理前体
公开(公告)号：EP2808885A1
公开(公告)日：2014-12-03
申请号：EP14169930.6
申请日：2014-05-27
申请人： FEI COMPANY
发明人： Rue, Chad , Chandler, Clive D.
IPC分类号： H01J37/305 , H01L21/3213
CPC分类号： H01L21/67069 , H01J37/3056 , H01J37/3233 , H01J37/3244 , H01J2237/3151 , H01J2237/31744 , H01J2237/31749 , H01J2237/334 , H01L21/3065 , H01L21/31105 , H01L21/31116 , H01L21/32131 , H01L21/32136 , H01L21/76892
摘要： A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.
摘要翻译：要除去使用聚焦离子束系统，该方法包括限定目标区域用于半导体器件的改进的平面解处理的方法和系统，所述目标区域包括一个混合的铜和半导体器件的电介质层的至少一部分。引向目标区域中的前体气体; 和朝向引导在所述前体气体存在的目标区域中的聚焦的离子束，从而去除第一混合铜和介电层的至少一部分和在生产研磨的目标区域中的一致平滑地面。所述前体气体使聚焦离子束铣削的铜以基本上相同的速率作为电介质。在优选实施方案中，前体气体包括硝基乙酸甲酯。在可替代的实施方案中，前体气体是乙酸甲酯，乙酸乙酯，硝基乙酸乙酯，乙酸丙酯，硝基乙丙酯，乙基硝基酯，甲基methoxyacetates，或甲氧基乙酰氯。

5. 发明公开

EP2572014A1 SPOTLESS ARC DIRECTED VAPOR DEPOSITION (SA-DVD) AND RELATED METHOD THEREOF 审中-公开
标题翻译：展望SPOTLESS ARC STEAM存款及其相应的方法
公开(公告)号：EP2572014A1
公开(公告)日：2013-03-27
申请号：EP11778439.7
申请日：2011-05-06
申请人： University of Virginia Patent Foundation , Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung e.V.
发明人： WADLEY, Haydn N. G. , MATTAUSCH, Goesta , ROEGNER, Frank-Holm , SCHEFFEL, Bert , METZNER, Christoph
IPC分类号： C23C14/34 , C23C14/30 , C23C14/22 , C23C14/00
CPC分类号： C23C14/325 , C23C14/0021 , C23C14/228 , H01J37/3053 , H01J37/32055 , H01J37/3233 , H01J37/32357 , H01J37/32449 , H01J37/32568 , H01J37/32614 , H01J2237/006 , H01J2237/3137
摘要： A plasma assisted directed vapor deposition process that utilizes a spotless arc directed vapor deposition (SA-DVD) method for the creation of the plasma in a directed vapor deposition apparatus. Vapor is created by electron or other high intensity directed energy beam evaporation from one or more source materials contained in a water cooled crucible. This vapor is entrained in a transonic helium or other gas jet and transported to a substrate for deposition. The electron or other directed energy beam used for evaporation is simultaneously exploited to ionize the vapor and the jet forming gas (helium, or other gases including combinations of inert and reactant gases). An anode positioned near the electron beam impingement position attracts scattered electrons formed during the directed energy beams interaction with a target surface and enables the formation of an intense plasma. This plasma is at first transported towards the substrate by the vapor entraining gas jet through an ion-drag mechanism. However, if the substrate is sufficiently charged (electrically biased), the plasma ions are electrostatically accelerated towards the substrate and this extra momentum aids in vapor transport and deposition on a component surface.

6. 发明公开

EP2401232A1 COAXIAL HOLLOW CATHODE PLASMA ASSISTED DIRECTED VAPOR DEPOSITION AND RELATED METHOD THEREOF 有权
标题翻译：同轴空心阴极等离子体支LOOKING AND ASSOCIATED METHODS蒸镀
公开(公告)号：EP2401232A1
公开(公告)日：2012-01-04
申请号：EP10746778.9
申请日：2010-02-24
申请人： University Of Virginia Patent Foundation , Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： WADLEY, Haydn N. G. , MATTAUSCH, Goesta , MORGNER, Henry , ROEGNER, Frank-Holm
IPC分类号： C01B33/12 , C23C16/513 , H05H1/24
CPC分类号： H01J37/32596 , C23C14/228 , C23C14/246 , C23C14/30 , C23C14/32 , H01J37/3053 , H01J37/32055 , H01J37/3233 , H01J37/32339 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/34 , H01J2237/332
摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

7. 发明公开

EP1921657A2 System and Method for Generating Ions and Radicals 审中-公开
标题翻译：系统与Verfahren zur Erzeugung von Ionen und Radikalen
公开(公告)号：EP1921657A2
公开(公告)日：2008-05-14
申请号：EP07115857.0
申请日：2007-09-06
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W. , Klemm, Günter , Hacker, Volker , Lotz, Hans-Georg
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J27/16 , H01J37/32009 , H01J37/3233 , H01J37/32366
摘要： A system and method for producing electrons and ions are disclosed. One embodiment includes an outer electrode (125) with a discharge chamber (135); an inner electrode (130) positioned inside the discharge chamber, the inner electrode positioning forming a upper portion of the discharge chamber and a lower portion of the discharge chamber; and a gas inlet positioned in the lower portion of the discharge chamber; wherein a plasma formed within the lower portion of the discharge chamber provides priming particles usable to form a plasma in the upper portion of the discharge chamber.
摘要翻译：公开了一种用于产生电子和离子的系统和方法。一个实施例包括具有放电室（135）的外部电极（125）; 位于所述放电室内部的内部电极（130），所述内部电极定位形成所述放电室的上部和所述放电室的下部; 以及位于所述排出室的下部的气体入口; 其中形成在所述放电室的下部内的等离子体提供可用于在所述放电室的上部形成等离子体的引发粒子。

8. 发明公开

EP1831425A2 METHOD AND APPARATUS FOR PROCESSING METAL BEARING GASES 有权转让
标题翻译：用于除去含金属气体方法
公开(公告)号：EP1831425A2
公开(公告)日：2007-09-12
申请号：EP05856938.5
申请日：2005-11-08
申请人： MKS INSTRUMENTS, INC.
发明人： HOLBER, William M. , SMITH, John , CHEN, Xing , SMITH, Donald
IPC分类号： C23C16/44
CPC分类号： H01J37/08 , H01J37/3233 , H01J37/32522 , H01J2237/0815 , H01J2237/31701
摘要： A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

9. 发明授权

EP0884760B1 Electron-beam excited plasma generator 失效
标题翻译：电子束激发的等离子体发生器
公开(公告)号：EP0884760B1
公开(公告)日：2003-03-19
申请号：EP98110555.4
申请日：1998-06-09
申请人： KAWASAKI JUKOGYO KABUSHIKI KAISHA
发明人： Ryoji, Makoto , Tokai, Masakuni , Mori, Yukitaka , Hasegawa, Takeshi , Ban, Masahito
IPC分类号： H01J37/32
CPC分类号： H01J37/32009 , H01J37/3233 , H01J37/32357

10. 发明公开

EP0921556A2 Thin film forming apparatus 有权
标题翻译：薄膜成形装置
公开(公告)号：EP0921556A2
公开(公告)日：1999-06-09
申请号：EP98122291.2
申请日：1998-11-24
申请人： Nissin Electric Co., Ltd.
发明人： Kishida, Shigeaki c/o NISSIN ELECTRIC CO., LTD. , Mikami, Takashi c/o NISSIN ELECTRIC CO., LTD. , Kirimura, Hiroya c/o NISSIN ELECTRIC CO., LTD. , Ogata, Kyoshi c/o NISSIN ELECTRIC CO., LTD.
IPC分类号： H01J37/32
CPC分类号： H01J37/3233
摘要： There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber (7), a thin film is formed on a surface of a substrate (12) in the film forming chamber (7) by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams (4) onto the surface of the substrate (12) at the same time. The substrate (12) is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode (13) for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate (12), on the surface side of the substrate (12).
摘要翻译：提供了一种薄膜形成设备，其中高频等离子体由成膜室（7）中的原料气体制成，薄膜形成在成膜室（7）中的衬底（12）的表面上）被高频等离子体处理，并且通过同时将离子束（4）照射到衬底（12）的表面上来控制薄膜的特性。基板（12）由具有正方形表面或矩形表面的方形板构成; 并且该薄膜形成设备设置有高频电极（13），用于将高频等离子体形成为立方体或长方体以覆盖基板（12）的整个表面，在基板的表面侧（ 12）。

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