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1. 发明授权

EP2263236B1 METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION DEVICE 有权
标题翻译：方法形成磁隧道屏障装置的
公开(公告)号：EP2263236B1
公开(公告)日：2016-03-30
申请号：EP09718651.4
申请日：2009-02-27
申请人： QUALCOMM Incorporated
发明人： LI, Xia
IPC分类号： B82Y25/00 , B82Y40/00
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/5607 , G11C2211/5615 , H01F10/3254 , H01F41/308 , H01L27/222 , H01L43/08

2. 发明公开

EP2184381A1 Dry etching method for magnetic material 审中-公开
标题翻译：干法蚀刻磁性材料的方法
公开(公告)号：EP2184381A1
公开(公告)日：2010-05-12
申请号：EP10001014.9
申请日：2004-07-26
申请人： Canon Anelva Corporation
发明人： Kodaira, Yoshimitsu , Hiromi, Taichi
IPC分类号： C23F4/00 , H01F41/30 , H01F1/14 , H01F1/34 , H01L21/3213 , G11B5/31
CPC分类号： B82Y25/00 , B82Y40/00 , C23F4/00 , G11C11/161 , H01F10/3254 , H01F41/308 , H01J2237/3343 , H01L43/12 , Y10T29/49052
摘要： A method for manufacturing a tunneling magnetoresistance (TMR) device comprises providing with an element comprising a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer positioned between the first ferromagnetic layer and the second ferromagnetic layer and an antiferromagnetic layer, and then forming a non-organic layer positioned at the top surface of the element, and then forming a photo-resist mask on the non-organic layer, thereby providing with a pre-TMR device; providing with a container 2 having a plasma generating means 1, an exhausting means 21, a first gas feeding means 3 and second gas feeding means; exhausting an inner space of the container by using the exhausting means 21; introducing the pre-TMR device into the exhausted inner space of the container 2; a first etching for etching the non-organic layer by using a process comprising: feeding a first etching gas into said exhausted inner space by using the first gas feeding means 3 and generating a plasma by using the plasma generating means 1, thereby forming a pattern of the non-organic layer according to the photo-resist mask pattern; and a second etching for etching the element by using a process comprising: feeding a second etching gas selected from the group consisting of an alcohol gas, a ketone gas and a non-substituted hydrocarbon gas into said exhausted inner space by using the second gas feeding means and generating a plasma by using the plasma generating means 1, thereby forming a pattern of the element according to the patterned non-organic layer.
摘要翻译：一种用于制造隧穿磁阻（TMR）器件的方法包括提供包括第一铁磁层，第二铁磁层，位于第一铁磁层和第二铁磁层之间的绝缘层和反铁磁层的元件，然后形成非有机层，然后在非有机层上形成光致抗蚀剂掩模，由此提供预先TMR器件; 该容器2具有等离子体发生装置1，排气装置21，第一气体供给装置3和第二气体供给装置; 通过使用排气装置21排出容器的内部空间; 将预TMR装置引入容器2的排空内部空间; 通过使用包括以下工艺的用于蚀刻非有机层的第一蚀刻：通过使用第一气体馈送装置3将第一蚀刻气体馈送到所述排出的内部空间中，并且通过使用等离子体发生装置1产生等离子体，由此形成图案根据所述光致抗蚀剂掩模图案形成所述非有机层; 以及通过使用包括以下工艺的用于蚀刻所述元件的第二蚀刻：通过使用所述第二气体馈送将从由醇气体，酮气体和未被取代的烃气体组成的组中选择的第二蚀刻气体馈送到所述排空的内部空间中意味着通过使用等离子体发生装置1产生等离子体，由此根据图案化的非有机层形成元件的图案。

3. 发明公开

EP2073286A1 MAGNETORESISTIVE ELEMENT MANUFACTURING METHOD, AND MULTI-CHAMBER APPARATUS FOR MANUFACTURING THE MAGNETORESISTIVE ELEMENT 审中-公开
标题翻译：用于生产生产同样一种磁阻效应元素多腔室装置
公开(公告)号：EP2073286A1
公开(公告)日：2009-06-24
申请号：EP07807161.0
申请日：2007-09-12
申请人： Canon Anelva Corporation
发明人： IKEMOTO, Manabu , OSADA, Tomoaki , YOKOKAWA, Naoaki
IPC分类号： H01L43/12 , H01L21/02 , H01L21/3065 , H01L43/08
CPC分类号： H01F41/308 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01L43/12
摘要： A magnetoresistive effect element manufacturing method includes a first step of preparing a magnetoresistive effect element including a magnetic film and a substrate, a second step of etching a predetermined region of the magnetic film by a reactive ion etching method, and a third step of exposing the magnetic film having undergone the second step to a plasma at an ion current density of 4 × 10 -7 A/cm 2 or less.
摘要翻译：一种磁阻效应元件制造方法，包括，通过膜的反应性离子蚀刻法制备磁阻效应元件包括磁膜和基板，蚀刻所述磁的预定区域的第二步骤的第一步骤，和暴露所述的第三步骤磁性薄膜已经经历第二步骤的等离子体在4×10 -7 A / cm 2以下的离子电流密度。

4. 发明公开

EP1458031A3 Hybrid ferromagnet/semiconductor spin device and fabrication method thereof 审中-公开
标题翻译：铁磁半导体混合自旋排列及其生产方法
公开(公告)号：EP1458031A3
公开(公告)日：2005-01-26
申请号：EP04251433.1
申请日：2004-03-12
申请人： Korea Institute of Science and Technology
发明人： Lee, Woo Young , Han, Suk Hee , Chang, Joon Yeon , Kim, Hi Jung , Lee, Han Joo , Hwang, Woong Jun , Shin, Moo Whan , Kim, Young Keun
IPC分类号： H01L29/76 , H01L29/86 , H01L29/66
CPC分类号： H01F10/1936 , B82Y25/00 , B82Y40/00 , H01F10/193 , H01F41/308 , H01L29/66984
摘要： Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.

5. 发明公开

EP1458031A2 Hybrid ferromagnet/semiconductor spin device and fabrication method thereof 审中-公开
标题翻译： Ferromagnet-Halbleiter-Hybrid-Spin-Anordnung und dessen Herstellungsmethode
公开(公告)号：EP1458031A2
公开(公告)日：2004-09-15
申请号：EP04251433.1
申请日：2004-03-12
申请人： Korea Institute of Science and Technology
发明人： Lee, Woo Young , Han, Suk Hee , Chang, Joon Yeon , Kim, Hi Jung , Lee, Han Joo , Hwang, Woong Jun , Shin, Moo Whan , Kim, Young Keun
IPC分类号： H01L29/76 , H01L29/86
CPC分类号： H01F10/1936 , B82Y25/00 , B82Y40/00 , H01F10/193 , H01F41/308 , H01L29/66984
摘要： Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.
摘要翻译：公开了适用于作为存储器的自旋注入装置和使用通过将从铁磁体自旋极化的载流子注入到常温下的半导体中而获得的自旋阀效应的自旋注入装置和自旋极化场效应晶体管。

6. 发明公开

EP0959146A3 Dual chamber ion beam sputter deposition system 有权
标题翻译： Zweikammersystem zur Ionenstrahl-Sputterbeschichtung
公开(公告)号：EP0959146A3
公开(公告)日：2002-06-05
申请号：EP99303187.1
申请日：1999-04-23
申请人： International Business Machines Corporation
发明人： Pinarbasi, Mustafa
IPC分类号： C23C14/46 , C23C14/56 , H01F41/30
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C23C14/46 , C23C14/568 , G11B5/3163 , G11B2005/3996 , H01F41/308
摘要： A dual chamber deposition system (300) comprising two ion beam sputtering (IBS) deposition chambers (302,304) connected by a wafer handler chamber (306) for depositions of multilayer thin film structures with improved process throughput. Reactive ion beam sputtering depositions and metal layer depositions on a substrate may be carried out in separate IBS deposition chambers while maintaining vacuum conditions throughout the process. A process for ion beam sputter deposition of spin valve (SV) magnetoresistive sensor layers having an AFM layer formed of NiO where reactive sputtering deposition of the NiO is carried out in a separate IBS deposition chamber from the subsequent metal layer depositions improves system throughput while maintaining SV sensor performance.
摘要翻译：双室沉积系统包括两个离子束溅射（IBS）沉积室，其通过晶片处理器室连接，用于沉积具有改进的工艺生产能力的多层薄膜结构。反应性离子束溅射沉积和基底上的金属层沉积可以在单独的IBS沉积室中进行，同时在整个过程中保持真空条件。具有由NiO形成的AFM层的自旋阀（SV）磁阻传感器层的离子束溅射沉积的方法，其中NiO的反应性溅射沉积在单独的IBS沉积室中与随后的金属层沉积进行，提高系统吞吐量，同时保持 SV传感器性能。

7. 发明授权

EP4240131B1 BOTTOM-PINNED SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：EP4240131B1
公开(公告)日：2024-07-31
申请号：EP22190021.0
申请日：2022-08-11
IPC分类号： H10N50/10 , H10N50/80 , H10N50/01 , H10B61/00 , H01F10/32
CPC分类号： H10N50/01 , H10N50/10 , H10N50/80 , H10B61/00 , H01F41/308 , H01F10/329

8. 发明授权

EP1926158B1 METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE DEVICE 有权
标题翻译：方法和设备组件制造磁阻
公开(公告)号：EP1926158B1
公开(公告)日：2016-04-27
申请号：EP06810098.1
申请日：2006-09-13
申请人： Canon Anelva Corporation
发明人： WATANABE, Naoki , KODAIRA, Yoshimitsu , DJAYAPRAWIRA, David D , MAEHARA, Hiroki
IPC分类号： H01L43/08 , H01L43/12 , H01F41/30
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/308

9. 发明授权

EP1793400B1 Element of a MRAM array 有权
标题翻译：一个MRAM阵列的元件
公开(公告)号：EP1793400B1
公开(公告)日：2014-01-08
申请号：EP07005378.0
申请日：2003-04-21
申请人： Micron Technology, Inc.
发明人： Hineman, Max , Signorini, Karen , Howard, Brad J.
IPC分类号： H01F10/32 , B82Y40/00 , H01F41/30 , G11C11/15 , G11C11/16 , H01L27/22 , H01F41/34
CPC分类号： H01L27/222 , B82Y25/00 , B82Y40/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F41/302 , H01F41/308 , H01F41/34

10. 发明授权

EP0959146B1 Dual chamber ion beam sputter deposition system 有权
标题翻译：对于离子束溅射二室系统
公开(公告)号：EP0959146B1
公开(公告)日：2007-07-25
申请号：EP99303187.1
申请日：1999-04-23
申请人： Hitachi Global Storage Technologies Netherlands B.V.
发明人： Pinarbasi, Mustafa
IPC分类号： C23C14/46 , C23C14/56 , H01F41/30
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C23C14/46 , C23C14/568 , G11B5/3163 , G11B2005/3996 , H01F41/308

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