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1. 发明公开

EP2073285A3 A high performance MTJ element for STT-RAM and method for making the same 有权转让
标题翻译：用于其STT-RAM和制造方法高性能MTJ元件
公开(公告)号：EP2073285A3
公开(公告)日：2012-10-17
申请号：EP08392010.8
申请日：2008-07-09
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Tong, Ru-Ying , Torng, Chyu-Jiuh , Kula, Witold
IPC分类号： H01L43/08 , H01L43/12 , H01F10/32 , H01L43/10 , G11C11/16
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer (2), a SyAP pinned layer (345), a naturally oxidized, crystalline MgO tunneling barrier layer (6) that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer (7) that comprises an amorphous layer (72) of Co 60 Fe 20 B 20 of approximately 20 angstroms thickness formed between two crystalline layers (71,73) of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

2. 发明公开

EP1968130A3 A novel SyAF structure to fabricate Mbit MTJ MRAM 有权转让
标题翻译： SyAF新颖结构用于制备兆位MTJ MRAM
公开(公告)号：EP1968130A3
公开(公告)日：2012-02-22
申请号：EP08368008.2
申请日：2008-03-07
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Ru-Ying, Tong , Torng, Chyu-Jiuh , Liu, Guangli
IPC分类号： H01L43/10 , H01L43/12 , H01F10/32
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-µm 2 for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co 60 Fe 20 B 20 layer and an upper crystalline Co 75 Fe 25 layer to promote a smoother and more uniform AlOx tunnel barrier. A "stronger oxidation" state is realized in the AlOx layer by depositing a thicker than normal Al layer or extending the ROX cycle time for Al oxidation and thereby reduces tunneling hot spots. The NiFe free layer has a low Fe content of about 8 to 21 atomic % and the Hf content in the NiFeHf capping layer is from 10 to 25 atomic %. A Ta hard mask is formed on the capping layer. EC (best) is reduced from >100 ppm to

3. 发明公开

EP1918947A3 Hafnium doped cap and free layer for MRAM device 有权转让
标题翻译： Hafniumdotierte Kappe und Freie Schichtfüreine MRAM-Vorrichtung
公开(公告)号：EP1918947A3
公开(公告)日：2008-06-04
申请号：EP07392007.6
申请日：2007-09-27
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Tong, Ru-Ying , Torng, Chyu-Jiuh , Kula, Witold
IPC分类号： H01F10/32 , H01F41/30
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another.
摘要翻译：描述了高性能MTJ及其制造方法。使用NiFeHf的覆盖层将氧气从自由层中吸出，从而提高自由层 - 隧道层界面的清晰度。自由层包括两个NiFe层，其磁致伸缩常数是相反的，从而大大地相互抵消。

4. 发明公开

EP1885006A1 A novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same 有权转让
标题翻译：用于磁隧道结器件的新罩面层为的dR / R及其制造方法的加强
公开(公告)号：EP1885006A1
公开(公告)日：2008-02-06
申请号：EP07392004.3
申请日：2007-07-30
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Tong, Ru-Ying
IPC分类号： H01L43/08 , H01L43/12 , H01F10/32 , G11B5/39 , G11C11/15
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , G11C11/161 , G11C11/1673 , H01F10/30 , H01F10/3254 , H01F10/3259 , H01F10/3295 , H01F41/302 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle layer, and a Ru outer layer on the Ta layer. For example, a low magnetization NiFeHf layer is achieved by co-sputtering NiFe and Hf targets with a forward power of 400W and 200W, respectively. A higher Hf content increases the oxygen gettering power of the NiFeHf layer and the thickness is modified to change dR/R, RA, and magnetostriction values. A so-called dead layer between the free layer and capping layer is substantially reduced by incorporating a NiFeHf layer on the free layer to improve lattice matching. The Fe content in the NiFe target used to make the NiFeHf layer is preferably the same as in the NiFe free layer.
摘要翻译：在到MRAM阵列或TMR的MTJ读出磁头被盘游离缺失其中低磁化覆盖层是具有在所形成的一个NiFe或的CoFeB /的NiFe自由层，Ta中间层上的NiFeHf内层，和由Ru外层的复合 Ta层。对于实施例，低磁化NiFeHf层通过共溅射的NiFe和Hf靶与400W和200W的行波功率分别实现。较高的HF含量增加NiFeHf层的氧吸杂能力和厚度被修改以改变的dR / R，RA，和磁致伸缩值。自由层和覆盖层之间的所谓的死层基本上由在自由层上引入一个NiFeHf层以改善晶格匹配降低。在用于制备NiFeHf层的镍铁靶中的Fe含量优选为相同于由NiFe自由层。

5. 发明授权

EP2073285B1 A high performance MTJ element for STT-RAM and method for making the same 有权转让
标题翻译：用于其STT-RAM和制造方法高性能MTJ元件
公开(公告)号：EP2073285B1
公开(公告)日：2015-04-29
申请号：EP08392010.8
申请日：2008-07-09
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Tong, Ru-Ying , Torng, Chyu-Jiuh , Kula, Witold
IPC分类号： B82Y25/00 , B82Y40/00 , H01F10/32 , G11C11/16 , H01F10/30 , H01L43/08 , H01L43/10 , H01L43/12 , H01F41/30
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12

6. 发明公开

EP1801895A3 MgO/Nife MTJ for high performance MRAM application 有权转让
标题翻译：氧化镁/镍铁MTJ高性能MRAM应用
公开(公告)号：EP1801895A3
公开(公告)日：2011-01-12
申请号：EP06392019.3
申请日：2006-12-20
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Ru-Ying, Tong
IPC分类号： H01L43/12 , H01F10/32 , H01F41/30 , C23C14/58 , H01F41/18 , G11C11/16
摘要： An improved tunneling barrier layer (25,35) is formed for use in a MTJ device. This is accomplished by forming the tunneling barrier layer in two steps. First a layer of magnesium is deposited by DC sputtering and converted to magnesium oxide (31) through radical oxidation. This is followed by a second, thinner, magnesium layer that is converted to magnesium oxide (32) through normal oxidation. Optionally, there may also be a thin layer of magnesium (33) on the two magnesium oxide layers (31,32). The tunnelling barrier layer (25,35) is located between pinned ferrromagnetic layer (24) and free ferromagnetic layer (26).

7. 发明公开

EP1968130A2 A novel SyAF structure to fabricate Mbit MTJ MRAM 有权转让
标题翻译： Neuartige SyAF-Struktur zur Herstellung von Mbit-MTJ-MRAM
公开(公告)号：EP1968130A2
公开(公告)日：2008-09-10
申请号：EP08368008.2
申请日：2008-03-07
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Ru-Ying, Tong , Torng, Chyu-Jiuh , Liu, Guangli
IPC分类号： H01L43/10 , H01L43/12 , H01F10/32
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-µm 2 for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co 60 Fe 20 B 20 layer and an upper crystalline Co 75 Fe 25 layer to promote a smoother and more uniform AlOx tunnel barrier. A "stronger oxidation" state is realized in the AlOx layer by depositing a thicker than normal Al layer or extending the ROX cycle time for Al oxidation and thereby reduces tunneling hot spots. The NiFe free layer has a low Fe content of about 8 to 21 atomic % and the Hf content in the NiFeHf capping layer is from 10 to 25 atomic %. A Ta hard mask is formed on the capping layer. EC (best) is reduced from >100 ppm to
摘要翻译：公开了一种MTJ，其对于1Mbit MRAM设备实现了最大限度地减少误差计数（EC），同时实现了高MR值，低磁致伸缩以及约1100Ω-2的RA。 MTJ具有由较低的无定形Co 60 Fe 20 B 20层和上部结晶Co 75 Fe 25层制成的复合AP1钉扎层，以促进更平滑和更均匀的AlOx隧道屏障。在AlOx层中通过沉积比普通的Al层更厚或延长了RO氧化循环时间，从而减少了隧道的热点，实现了“更强的氧化”状态。 NiFe自由层的Fe含量低，为约8〜21原子％，NiFeHf覆盖层的Hf含量为10〜25原子％。在封盖层上形成Ta硬掩模。通过使用优选的MTJ构型，EC（最佳）从> 100ppm降低到<10ppm。

8. 发明授权

EP1968130B1 A novel SyAF structure to fabricate Mbit MTJ MRAM 有权转让
标题翻译： SyAF新颖结构用于制备兆位MTJ MRAM
公开(公告)号：EP1968130B1
公开(公告)日：2013-10-02
申请号：EP08368008.2
申请日：2008-03-07
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Ru-Ying, Tong , Torng, Chyu-Jiuh , Liu, Guangli
IPC分类号： H01L43/10 , H01L43/12 , H01F10/32
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/12

9. 发明授权

EP1885006B1 A novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same 有权转让
标题翻译：用于磁隧道结器件的新罩面层为的dR / R及其制造方法的加强
公开(公告)号：EP1885006B1
公开(公告)日：2009-12-09
申请号：EP07392004.3
申请日：2007-07-30
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Tong, Ru-Ying
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22 , G11B5/39 , G11C11/16 , H01F10/30
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , G11C11/161 , G11C11/1673 , H01F10/30 , H01F10/3254 , H01F10/3259 , H01F10/3295 , H01F41/302 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12

10. 发明公开

EP2073285A2 A high performance MTJ element for STT-RAM and method for making the same 有权转让
标题翻译： Hochleistungs-MTJ-ElementfürSTT-RAM und Herstellungsverfahrendafür
公开(公告)号：EP2073285A2
公开(公告)日：2009-06-24
申请号：EP08392010.8
申请日：2008-07-09
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Tong, Ru-Ying , Torng, Chyu-Jiuh , Kula, Witold
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co 60 Fe 20 B 20 .of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：我们描述了形成使用自旋角动量转移作为改变自由层的磁矩方向的机制的STT-MTJ MRAM单元的结构和方法。该装置包括形成在钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层（2），SyAP钉扎层（345），天然氧化的结晶MgO隧道势垒层（6），并且在一个实施例中，自由层（7）包括分别在3和6埃厚度的Fe的两个结晶层（71,73）之间形成的约20埃厚度的Co 60 Fe 20 B 20的非晶层（72）。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

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