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    • 10. 发明公开
    • Multi-mode memory device and method
    • 多模式存储设备和方法
    • EP2615611A3
    • 2013-07-31
    • EP13157772.8
    • 2009-06-10
    • Micron Technology, Inc.
    • Jeddeloh, Joseph, M.
    • G11C11/4093G11C11/4096G11C11/409G11C11/408G06F13/00G11C5/02
    • G11C11/408G06F13/1694G11C5/02G11C11/4093G11C11/4096
    • Memory device systems, systems and methods are disclosed, such as those involving a plurality of stacked memory device dice and a logic die connected to each other through a plurality of conductors. The logic die serves, for example, as a memory interface device to a memory access device, such as a processor. The logic die can include a command register that allows selective operation in either of two modes. In a direct mode, conventional command signals as well as row and column address signals are applied to the logic die, and the logic die can essentially couple these signals directly to the memory device dice. In an indirect mode, a packet containing a command and a composite address are applied to the logic die, and the logic die can decode the command and composite address to apply conventional command signals as well as row and column address signals to the memory device dice.
    • 公开了存储器件系统,系统和方法,诸如涉及通过多个导体相互连接的多个堆叠的存储器件裸片和逻辑裸片的存储器件系统,系统和方法。 逻辑管芯例如用作存储器接口设备到存储器访问设备,例如处理器。 逻辑裸片可以包括允许以两种模式中的任一种进行选择性操作的命令寄存器。 在直接模式中,常规命令信号以及行和列地址信号被施加到逻辑裸片,并且逻辑裸片可以基本上将这些信号直接耦合到存储器件裸片。 在间接模式中,包含命令和复合地址的分组被施加到逻辑管芯,并且逻辑管芯可以解码命令和复合地址以将常规命令信号以及行和列地址信号施加到存储器设备管芯 。