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1. 发明授权

EP1963923B1 ANALYSIS DEVICE WITH AN ARRAY OF FOCUSING MICROSTRUCTURES 有权转让
标题翻译：具有一组聚焦微结构的分析装置
公开(公告)号：EP1963923B1
公开(公告)日：2018-02-21
申请号：EP06842551.1
申请日：2006-12-15
申请人： Koninklijke Philips N.V.
发明人： DIRKSEN, Peter , AKSENOV, Yuri , VAN DEN HEUVEL, Fredericus, C. , KWINTEN, Johannes, A., J., M.
IPC分类号： G03F7/20 , G01N21/01 , B01L3/00 , G03F9/00
CPC分类号： G03F7/70616 , B01L3/502707 , B01L2200/12 , B01L2300/0654 , B01L2300/0819 , G03F7/70608 , G03F9/7011 , G03F9/7019 , G03F9/7076 , G06F3/016 , G11C16/16
摘要： A device includes first and second material facing towards each other as to form at least one focusing microstructure with a focal point located outside of the first material.

2. 发明授权

EP2691811B1 MEASUREMENT OF THE POSITION OF A RADIATION BEAM SPOT IN LITHOGRAPHY 有权
标题翻译：光刻中辐射束点位置的测量
公开(公告)号：EP2691811B1
公开(公告)日：2018-01-31
申请号：EP12708271.7
申请日：2012-02-22
申请人： ASML Netherlands B.V.
发明人： PEETERS, Felix , BENSCHOP, Jozef , RENKENS, Michael , VAN BAARS, Gregor , DEKKERS, Jeroen
IPC分类号： G03F7/20
CPC分类号： G03F7/70133 , G03F7/70275 , G03F7/70375 , G03F7/70391 , G03F7/704 , G03F7/70516 , G03F7/708 , G03F7/7085 , G03F9/7019
摘要： A radiation spot measurement system for a lithographic apparatus, the system having a target onto which a radiation system of the lithographic apparatus may project spots of radiation for a measurement process, the target having a measurement target. The system further includes a radiation detector to detect radiation from one of the spots, and a controller to receive information from the radiation detector and to determine the position of the spot of radiation relative to an intended position of the spot of radiation.

3. 发明公开

EP2131245A3 Lithographic apparatus and its focus determination method 审中-公开
标题翻译：一种光刻设备和它的焦点检测方法
公开(公告)号：EP2131245A3
公开(公告)日：2012-08-01
申请号：EP09161548.4
申请日：2009-05-29
申请人： ASML Netherlands BV
发明人： Hofmans, Gerardus , Segers, Bart
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F9/7076 , G03F7/70516 , G03F7/70616 , G03F9/7011 , G03F9/7019 , H01L21/02271
摘要： A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50x the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.

4. 发明授权

EP1469348B1 Projection system and method of use thereof 有权
标题翻译：投影系统及使用方法
公开(公告)号：EP1469348B1
公开(公告)日：2012-01-18
申请号：EP04076129.8
申请日：2004-04-08
申请人： ASML Netherlands B.V.
发明人： Leenders, Martinus Hendrikus Antonius , Cox, Henrikus Herman Marie , Levasier, Leon Martin
IPC分类号： G03F7/20
CPC分类号： G03F9/7019 , G03F7/70258 , G03F7/70725 , G03F7/70775 , G03F7/709 , G03F9/7011

5. 发明公开

EP2397906A2 Lithography apparatus and device manufacturing method 审中-公开
标题翻译：光刻设备和器件制造方法
公开(公告)号：EP2397906A2
公开(公告)日：2011-12-21
申请号：EP11164727.7
申请日：2011-05-04
申请人： Canon Kabushiki Kaisha
发明人： Sentoku, Koichi
IPC分类号： G03F9/00 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/2059 , G03F9/7011 , G03F9/7019 , G03F9/7053 , H01J37/3045 , H01J37/3177 , H01J2237/24528 , H01J2237/2482
摘要： A lithography apparatus includes a first measurement device (22) which measures a position of a mark on a substrate (9) with a light, a second measurement device (24) which measures a position of a reference mark (21) on a stage (13) with a charged-particle, a detector (23b) which detects the position of the stage in a first direction parallel to an axis of a projection system (8) and a second direction perpendicular to the axis, and a controller (C1). The controller determines a charged-particle beam of which an incident angle, relative to the first direction, on the reference mark falls within a tolerance, and obtains a baseline for the first measurement device based on a position of the reference mark measured by the second measurement device using the determined charged-particle beam and a position of the reference mark measured by the first measurement device.
摘要翻译：本发明提供一种光刻装置，其包括：利用光测量基板（9）上的标记的位置的第一测量装置（22）;测量基台（9）上的基准标记（21）的位置的第二测量装置（24） 13）;以及控制器（C1），其具有带电粒子;检测器（23b），其在平行于投影系统（8）的轴线的第一方向和垂直于所述轴线的第二方向上检测所述平台的位置;以及控制器（C1）。控制器确定参考标记上相对于第一方向的入射角落入容差内的带电粒子束，并且基于由第二测量装置测量的参考标记的位置来获得第一测量装置的基线测量装置使用所确定的带电粒子束和由第一测量装置测量的参考标记的位置。

6. 发明公开

EP2057506A1 A METHOD AND A SYSTEM FOR REDUCING OVERLAY ERRORS WITHIN EXPOSURE FIELDS BY APC CONTROL STRATEGIES 有权
标题翻译：方法和系统减少曝光区域覆盖误差由APC的税务策略
公开(公告)号：EP2057506A1
公开(公告)日：2009-05-13
申请号：EP07801880.1
申请日：2007-08-24
申请人： ADVANCED MICRO DEVICES, INC.
发明人： SELTMANN, Rolf , SCHULZ, Bernd , HEMPEL, Fritjof , SCHULZE, Uwe
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70458 , G03F7/70633 , G03F9/7011 , G03F9/7019 , G03F9/7046
摘要： By taking into consideration tool specific distortion signatures and reticle specific placement characteristics in an alignment control system the control quality of sophisticated APC strategies may significantly be enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.

7. 发明公开

EP1544682A3 Exposure apparatus, alignment method and device manufacturing method 审中-公开
标题翻译：曝光装置，对准方法和工艺用于制造装置
公开(公告)号：EP1544682A3
公开(公告)日：2008-11-05
申请号：EP04029551.1
申请日：2004-12-14
申请人： CANON KABUSHIKI KAISHA
发明人： Ohsaki, Yoshinori Canon Kabushiki Kaisha
IPC分类号： G03F9/00
CPC分类号： G03F9/7019 , G03F9/7011 , G03F9/7026 , G03F9/7088
摘要： An exposure apparatus for exposing a pattern on an exposure original onto a substrate using exposure light, includes a projection optical system for projecting the pattern on the exposure original onto the substrate, a first detection system that provides an alignment between the exposure original and the substrate in a plane orthogonal to an optical axis of the projection optical system, and a focus detecting system for detecting focusing condition of the projection optical system, the focus detection system includes a light intensity sensor for detecting light intensity of light which passed the projection optical system, wherein the focus detection system is calibrated based on the detection result of the first detection system.

8. 发明公开

EP1367447A3 Projection exposure device and position alignment device and position alignment method 审中-公开
标题翻译：投影曝光装置，对齐和对准
公开(公告)号：EP1367447A3
公开(公告)日：2008-06-25
申请号：EP03011165.2
申请日：2003-05-26
申请人： Adtec Engineering Co., Ltd.
发明人： Hirabayashi, Youichi, Adtec Engineering Co.,Ltd. , Matsumoto, Noriyoshi, Adtec Engineering Co.,Ltd.
IPC分类号： G03F9/00
CPC分类号： G03F9/7088 , G03F9/7011 , G03F9/7019 , G03F9/7065
摘要： The invention provides a projection exposure device that makes precise positional alignment possible.
With a printed circuit board 76 placed on a mobile stage 70, a mask mark 90 is irradiated by an ultra-violet light source 60 of an ultra-violet illumination device 6, thereby the image of the mask mark 90 is passed through a projection exposure lens 71 and a half-mirror 11, then reflected by an ultra-violet reflection surface mirror 10, thereafter further passed through a beam splitter 34 and an image formation lens 32, forming an image on a CCD 30. The center coordinate of the image is measured by an image recognition device 2. Next, a board mark 91 on the printed circuit board 76 is illuminated by an infrared light source 50 of an infrared illumination device 5, and its image is passed through the ultra-violet reflection surface mirror 10, the half-mirror 11, the beam splitter 34, a reflector 43, an image formation lens 42, and a beam splitter 52, forming an image on a CCD 40. The positional alignment is implemented by moving the mobile stage 70 in the XY directions or rotating it in θ degree angle by controlling a moving mechanism 81 in the way the center coordinate of the board mark 91 on the infrared CCD 40 is aligned with the center coordinate of the mask mark 90 on the ultra-violet CCD 30.

9. 发明公开

EP1755152A1 MEASURING METHOD, MEASURING EQUIPMENT, EXPOSING METHOD AND EXPOSING EQUIPMENT 失效转让
标题翻译： MESSVERFAHREN，MESSGERÄTE，BELICHTUNGSVERFAHREN UNDBELICHTUNGSGERÄTE
公开(公告)号：EP1755152A1
公开(公告)日：2007-02-21
申请号：EP05734605.8
申请日：2005-04-20
申请人： NIKON CORPORATION
发明人： KOBAYASHI, Mitsuru, c/o Nikon Corporation , YASUDA, Masahiko, c/o Nikon Corporation
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： G03F9/7046 , G03F9/7003 , G03F9/7011 , G03F9/7019 , G03F9/7084
摘要： To perform high-speed and highly accurate measurement by setting desired measuring conditions for each measuring object. In an alignment sensor of exposure apparatus, in the case of performing position measurement for a plurality of sample shots, measurement is performed by changing the measuring conditions, in response to a measuring axis direction, a mark or a layer whereupon a mark to be measured exists. At that time, for the measuring objects to be measured under the same measuring conditions, for example, a position in a Y axis direction and a position in an X axis direction, measurement is continuously performed. When the measuring condition is changed, a baseline value is remeasured. The changeable measuring conditions are wavelength of measuring light, use and selection of a retarder, NA and σ of an optical system, a light quantity of measuring light, illumination shape, signal processing algorithm, etc.
摘要翻译：通过设置每个测量对象的所需测量条件来执行高速和高精度的测量。在曝光装置的对准传感器中，在对多个采样拍摄进行位置测量的情况下，通过根据测量轴方向改变测量条件，进行测量的标记或层，进行测量存在。此时，对于在相同测量条件下测量的测量对象，例如，Y轴方向的位置和X轴方向的位置，连续进行测量。当测量条件改变时，将重新测量基准值。可变测量条件是测量光的波长，延迟器的使用和选择，光学系统的NA和Ã，测量光的光量，照明形状，信号处理算法等。

10. 发明授权

EP1117010B1 Lithographic apparatus with system for determining the Abbe arm 有权
标题翻译：与系统的光刻设备用于确定阿贝臂
公开(公告)号：EP1117010B1
公开(公告)日：2006-05-31
申请号：EP01300255.5
申请日：2001-01-12
申请人： ASML Netherlands B.V.
发明人： Groeneveld, Rogier Herman Mathijs , Loopstra, Erik Roelof , Burghoorn, Jacobus , Levasier, Leon Martin , Straaijer, Alexander
IPC分类号： G03F9/00
CPC分类号： G03F9/7019 , G03F9/7011 , G03F9/7034

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