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1. 发明授权

EP2119807B1 PROCESS FOR PRODUCING CHROMIUM NITRIDE COATING FILM BY ION PLATING FOR PISTON RING 有权
标题翻译：用活塞环离子镀法生产氮化铬涂层膜的工艺
公开(公告)号：EP2119807B1
公开(公告)日：2017-09-06
申请号：EP07831648.6
申请日：2007-11-12
申请人： Kabushiki Kaisha Riken
发明人： SEKIYA, Takuma , UEDA, Terushige , SHIMA, Yuji , INOUE, Shigeo
IPC分类号： C23C30/00 , C23C14/00 , C23C14/06 , C23C14/32 , F16J9/26
CPC分类号： C23C14/0641 , C23C14/0036 , C23C14/0073 , C23C14/0084 , C23C14/0664 , C23C14/325 , C23C30/00 , F16J9/26 , Y10T428/12493 , Y10T428/12535 , Y10T428/12576 , Y10T428/24355

2. 发明公开

EP2825683A2 COATING WITH ENHANCED SLIDING PROPERTIES 有权转让
标题翻译：涂料改进的滑动性能
公开(公告)号：EP2825683A2
公开(公告)日：2015-01-21
申请号：EP13709772.1
申请日：2013-03-11
申请人： Oerlikon Trading AG, Trübbach
发明人： RAMM, Jürgen , SEIBERT, Florian , WIDRIG, Beno
IPC分类号： C23C14/06 , C23C14/32
CPC分类号： C10M103/06 , C23C14/0073 , C23C14/0641 , C23C14/0676 , C23C14/325
摘要： The present invention relates to coated sliding parts having coating systems which allow better sliding performance under dry and/or under lubricated conditions. The coating systems according to the present invention being characterized by having an outermost layer which—is a smooth oxide-containing layer in case of sliding applications under lubricated conditions, or—is a self-lubricated layer comprising molybdenum nitride, in case of sliding applications under dry or lubricated conditions, is a selflubricated layer with a structured surface comprising a multitude of essentially circular recesses with diameters of several micrometers or below, the recesses randomly distributed over the surface.

3. 发明授权

EP1624087B1 A method for depositing thin layers of titanium dioxide on support surfaces 有权
标题翻译：在载体表面上沉积的钛薄膜的方法
公开(公告)号：EP1624087B1
公开(公告)日：2014-05-14
申请号：EP05014446.8
申请日：2005-07-04
申请人： VACUUM SURTEC S.r.l.
发明人： Antolotti, Nelso , Troglio, Sergio , Rizzi, Gabriele , Scrivani, Andrea , Ferpozzi, Roberto
IPC分类号： C23C14/02 , C23C14/00 , C23C14/08
CPC分类号： C23C14/0073 , C23C14/0052 , C23C14/022 , C23C14/083

4. 发明公开

EP0898273A2 Optical information recording medium and method of manufacturing the same 失效
标题翻译： Optisches Informationsaufzeichnungsmedium und Verfahren zu seiner Herstellung
公开(公告)号：EP0898273A2
公开(公告)日：1999-02-24
申请号：EP98305319.0
申请日：1998-07-03
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Kojima, Rie , Horai, Keiichiro , Kashihara, Toshiaki , Yamada, Noboru
IPC分类号： G11B7/24 , G11B7/26 , C23C14/00
CPC分类号： G11B7/26 , C23C14/0073 , G11B7/243 , G11B7/257 , G11B7/2585 , G11B7/2595 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , Y10S430/146
摘要： An optical information recording medium having a recording layer for inducing a reversible phase change by irradiation with energy beam. The recording layer contains Te, Ge, Sb, and N, and the concentration of the N being contained is in a range of about 0.1% by atom to about 10% by atom. In this constitution, an excellent repeated recording and erasing performance is obtained.
摘要翻译：一种光学信息记录介质，具有用于通过用能量束照射来引起可逆相变的记录层。记录层含有Te，Ge，Sb和N，并且所含有的N的浓度在约0.1原子％至约10原子％的范围内。在这种结构中，获得了优异的重复记录和擦除性能。

5. 发明授权

EP1541707B1 METHOD FOR PREPARING ALUMNA COATING FILM HAVING a-TYPE CRYSTAL STRUCTURE AS PRIMARY STRUCTURE 失效
标题翻译：用于生产类型的氧化铝涂层的晶体结构一级结构
公开(公告)号：EP1541707B1
公开(公告)日：2012-10-17
申请号：EP03784599.7
申请日：2003-08-08
申请人： KABUSHIKI KAISHA KOBE SEIKO SHO
发明人： Kohara, Toshimitsu, c/o Takasago Works in KK , Tamagaki, Hiroshi, c/o Takasago Works in KK , Ikari, Yoshimitsu, c/o Takasago Works in KK
IPC分类号： C23C14/08 , C23C14/34 , B23B27/14 , C23C14/00
CPC分类号： C23C14/0073 , C23C14/0036 , C23C14/081 , C23C14/3492 , H01J37/32752

6. 发明公开

EP2099949A4 REACTIVE SPUTTER DEPOSITION OF A TRANSPARENT CONDUCTIVE FILM 审中-公开
标题翻译：反应溅射沉积的透明导电膜
公开(公告)号：EP2099949A4
公开(公告)日：2010-07-07
申请号：EP07865841
申请日：2007-12-19
申请人： APPLIED MATERIALS INC
发明人： LI YANPING , YE YAN , CHAE YONG-KEE , WON TAE KYUNG , KADAM ANKUR , SHENG SHURAN , LI LIWEI
IPC分类号： C23C14/00
CPC分类号： C23C14/086 , C23C14/0073 , H01L31/022466 , H01L31/1884 , Y02E10/50

7. 发明公开

EP1007758A1 METHOD FOR MANUFACTURING A MULTILAYER FILM FOR USING IN A MAGNETIC HEAD FOR RECORDING INFORMATION 审中-公开
标题翻译：一种用于生产多层薄膜用在磁头用于记录信息
公开(公告)号：EP1007758A1
公开(公告)日：2000-06-14
申请号：EP99919485.5
申请日：1999-05-25
申请人： Koninklijke Philips Electronics N.V.
发明人： BLOEMEN, Hendrikus, F., B. , KLAASSENS, Wilco
IPC分类号： C23C14/14 , G11B5/31
CPC分类号： C23C14/0073 , G11B5/147 , G11B5/3163
摘要： In a method of manufacturing a multilayer film consisting of a stack of primary soft-magnetic layers and secondary non-magnetic layers on a substrate by way of reactive sputtering, use is made of one type of target at least as regards composition for alternately depositing a primary and a secondary layer, which target is particularly made of an FeHf alloy. For performing a sputtering process, use is preferably made of a gas mixture of Ar and O2 in which the quantity of O2 in the gas mixture is controllable and is smaller for sputtering the soft-magnetic layers than for sputtering the non-magnetic layers.

8. 发明公开

EP0658926A1 Method of producing a semiconductor device comprising a contact layer between the silicon substrate and a wiring layer 失效
标题翻译：一种用于制造半导体器件，包括在基板和连接层之间的接触层的过程。
公开(公告)号：EP0658926A1
公开(公告)日：1995-06-21
申请号：EP94117692.7
申请日：1994-11-09
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yoshida, Takehito , Hirao, Shuji , Yano, Kousaku
IPC分类号： H01L21/285 , C23C14/34 , C23C14/00
CPC分类号： H01L21/76846 , C23C14/0073 , C23C14/564 , H01L21/76843
摘要： Argon gas is supplied into a vacuum chamber (3) having a target of titanium (2) for depositing a titanium layer (5) on a silicon substrate (3), and argon gas mixingly containing nitrogen is then supplied into the vacuum chamber (1) for depositing a titanium nitride layer (6) on the titanium layer (5). Thereafter, argon gas is again supplied into the vacuum chamber for removing nitrogen stuck to the surface of the target (2) and also for depositing a titanium-nitrogen mixture layer (9) on the titanium nitride layer (6).
摘要翻译：氩气供给到真空腔室（3），其具有钛靶（2）用于沉积钛层（5）上的硅的基板（3），和氩气mixingly含氮然后被供给到真空腔室（1 ），用于在钛层上沉积的氮化钛层（6）（5）。有后，氩气被再次供给到真空室中除去氮附着在靶（2）的表面，并因此为氮化钛层（6）上沉积钛和氮的混合层（9）。

9. 发明公开

EP0598422A1 Method of forming a Ti and a TiN layer on a semiconductor body by a sputtering process, comprising an additional step of cleaning the target 失效
标题翻译：通过溅射法在半导体本体形成Ti和TiN层，与目标的纯化的附加步骤的方法。
公开(公告)号：EP0598422A1
公开(公告)日：1994-05-25
申请号：EP93202840.0
申请日：1993-10-06
申请人： Philips Electronics N.V.
发明人： Wolters, Robertus A.M., c/o INT. OCTROOIBUREAU BV , Swart, Edwin Tijibbe, c/o INT. OCTROOIBUREAU BV
IPC分类号： H01L21/3205 , C23C14/34 , C23C14/00 , C23C14/54 , H01J37/34
CPC分类号： H01L21/76843 , C23C14/0073 , C23C14/022 , C23C14/0641 , C23C14/165 , H01L21/76841
摘要： A method of manufacturing semiconductor devices whereby first a Ti layer (8) and then a TiN layer (9) are deposited on slices of semiconductor material (20). The slices are placed on a support (30) one after the other in a deposition chamber (22), the support being positioned opposite a target of Ti (32) surrounded by an annular anode (31). Material is then sputtered off the target by means of a plasma (35) generated near the target. The plasma is generated in Ar during deposition of the Ti layer and in a gas mixture of Ar and N₂ during deposition of the TiN layer. After the deposition of the TiN layer, before a next slice is placed in the chamber each time, the target is cleaned during an additional process step in that material is sputtered off the target by means of a plasma generated in Ar. The additional process step is ended the moment the target has regained a clean Ti surface again. It is achieved by this that an extra Ti layer comprising nitrogen is indeed deposited on the TiN layer during this additional process step, but that this is as thin as possible and accordingly contains as little free Ti as possible. Undesirable chemical reactions between free Ti and the conductive layers deposited on the layer comprising nitrogen are suppressed as much as possible thereby.
摘要翻译：制造半导体器件，其中第一Ti层（8），然后TiN层（9）上的半导体材料（20）的切片沉积的方法。在切片上的支撑（30），一个接一个地在沉积室（22）后放置，支承由在环形设计的阳极（31）所包围的Ti靶（32）相对地定位。然后材料被溅射下来通过等离子体（35）的装置中的目标靶附近产生。等离子体是在Ar中的Ti层的沉积过程中和TiN层的沉积期间Ar和N 2的气体混合物生成。 TiN层的沉积之后，下一个切片在腔室的每个时间放置之前，目标被期间在额外的工艺步骤清洗，DASS材料是通过在Ar中产生的等离子体的溅射手段关闭目标。额外的工序结束的那一刻目标已再次恢复干净的钛表面。它是由thisthat额外Ti层包含氮在该额外的处理步骤中的TiN层上确实沉积来实现的，但这样做是尽可能地薄，并且因此含有作为少量的自由Ti作为可能的。自由Ti和沉积包含氮的层上的导电层之间的不希望的化学反应得到抑制尽可能从而。

10. 发明公开

EP0121625A2 Rapid rate reactive sputtering of metallic compounds 无效
标题翻译：在高速的金属化合物的反应性溅射。
公开(公告)号：EP0121625A2
公开(公告)日：1984-10-17
申请号：EP83306544.4
申请日：1983-10-27
申请人： BORG-WARNER CORPORATION
发明人： Sproul, William Dallas
IPC分类号： C23C14/34
CPC分类号： C23C14/0073
摘要： A method of reactive sputtering of the nitride, oxide or carbide of titanium or similar materials onto a substrate (11) from a target (21) of the pure metal in a chamber (12) utilizing an inert gas, such as argon, wherein the deposition rate of the metallic compound approaches substantially the deposition rate of the pure metai. A reactive gas is introduced into the chamber adjacent to the target (21) at a constant flow and by a rapid pulsing wherein a valve is alternately opened and shut for very short time intervals.

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