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1. 发明公开

EP3015428A1 SILICON CARBIDE POWDER 有权
标题翻译：碳化硅粉末
公开(公告)号：EP3015428A1
公开(公告)日：2016-05-04
申请号：EP14817205.9
申请日：2014-06-20
申请人： Bridgestone Corporation
发明人： HASE, Kazuhito
IPC分类号： C01B31/36
CPC分类号： C01B31/36 , C01B32/956
摘要： The present invention is a silicon carbide powder with which it is possible to obtain favorable results in terms of the reaction performance of carbon and silicon, the amount of free carbon (FC), and the yield of the silicon carbide powder. In a mixture containing a silicon source, a carbon source, and a catalyst, the silicon source is methyl silicate; and when the mixture is 100 weight %, the weight % of the carbon source is 33 weight % or more and 39 weight % or less, the weight % of silicon source is 55 weight % or more and 62 weight % or less, and the weight % of the catalyst is 3 weight % or more and 10 weight % or less.
摘要翻译：本发明是一种碳化硅粉末，其可以在碳和硅的反应性能，游离碳（FC）的量和碳化硅粉末的产量方面获得有利的结果。在含有硅源，碳源和催化剂的混合物中，硅源是硅酸甲酯; 当所述混合物为100重量％时，所述碳源的重量％为33重量％以上且39重量％以下，所述硅源的重量％为55重量％以上且62重量％以下，并且所述催化剂的重量百分比为3重量％以上且10重量％以下。

2. 发明公开

EP2730541A4 PARTICLES FORMED OF SILICA AND CARBON, AND METHOD FOR PRODUCING MIXTURE OF SILICA AND CARBON 有权
标题翻译：从颗粒二氧化硅和碳及其制造方法二氧化硅和碳的混合物
公开(公告)号：EP2730541A4
公开(公告)日：2015-04-22
申请号：EP12806968
申请日：2012-07-03
申请人： TAIHEIYO CEMENT CORP
发明人： ICHITSUBO KOUKI , MASUDA KENTA , SUZUKI MASAKAZU , KAWANO KOHEI , KUMASAKA ATSUSHI
IPC分类号： C01B33/12 , C01B31/36 , C01B33/18 , C01B33/193
CPC分类号： C01B31/36 , C01B32/956 , C01B33/193 , C01P2002/72 , C01P2004/01 , C01P2004/03 , C01P2004/61 , C01P2006/80
摘要： The invention provides a particle formed of silica and carbon which has a low impurities content and an excellent reactivity. In the particle formed of silica and carbon, the silica and carbon are each distributed throughout the particle interior, and the contents of boron (B) and phosphorus (P) are each 1 ppm or less. Also provided is a method of producing a silica and carbon-containing material which is an assembly of particles formed of silica and carbon, this method including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon (Si) concentration within the a liquid portion of at least 10 wt% with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution obtained in the step (B) with a mineral acid so as to cause carbon (C) and silicon (Si) within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the particle-containing liquid substance so as to obtain a solid portion that contains a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion that contains impurities.

3. 发明授权

EP2444372B1 Method of producing silicon carbide 有权
标题翻译：一种用于制造碳化硅过程
公开(公告)号：EP2444372B1
公开(公告)日：2013-10-23
申请号：EP12151818.7
申请日：2008-12-22
申请人： National Institute for Materials Science , Shin-Etsu Chemical Co., Ltd.
发明人： Tanaka, Hidehiko , Aoki, Yoshitaka
IPC分类号： C01B31/36 , C04B35/571 , C04B35/565 , C04B35/632 , C04B35/626
CPC分类号： C01B31/36 , C01B32/956 , C04B35/565 , C04B35/571 , C04B35/6269 , C04B35/6325 , C04B2235/3289 , C04B2235/3826 , C04B2235/483 , C04B2235/5436 , C04B2235/602 , C04B2235/723 , C04B2235/79 , C04B2235/9661

4. 发明公开

EP2881494A4 SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY 有权
标题翻译： SIC状体及其制造方法的SiC状体
公开(公告)号：EP2881494A4
公开(公告)日：2016-03-02
申请号：EP12882269
申请日：2012-09-13
申请人： TOKAI CARBON KK
发明人： SUGIHARA TAKAOMI , ASAKURA MASAAKI , TOKUNAGA TAKESHI , SADAKI TETSUYA
IPC分类号： C23C16/42 , C01B31/36 , C04B35/565 , C23C16/01 , C23C16/32
CPC分类号： C01B31/36 , C01B32/956 , C04B35/565 , C04B2235/421 , C04B2235/441 , C04B2235/444 , C04B2235/46 , C04B2235/483 , C04B2235/72 , C04B2235/722 , C23C16/01 , C23C16/325
摘要： A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 ©·cm and 100,000 ©·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.

5. 发明公开

EP2899176A1 Ceramic structure 审中-公开
标题翻译： Keramische Struktur
公开(公告)号：EP2899176A1
公开(公告)日：2015-07-29
申请号：EP15152307.3
申请日：2015-01-23
申请人： Ibiden Co., Ltd
发明人： Takagi, Takashi , Maruyama, Hisaaki
IPC分类号： C04B35/565 , C04B35/622
CPC分类号： C01B31/36 , C01B32/956 , C04B35/565 , C04B35/62281 , G21C3/07
摘要： There is provided a ceramic structure including silicon carbide (SiC). The silicon carbide includes carbon, and silicon which has 28 Si enriched in comparison with a natural abundance ratio. An enrichment level of the 28 Si in the silicon carbide may be 99% or higher. The silicon carbide may be in the form of at least any one of an SiC sintered body, CVD-SiC, SiC fiber, and an SiC/SiC composite.
摘要翻译：提供了包括碳化硅（SiC）的陶瓷结构。碳化硅包括碳和与天然丰度比相比富含28Si的硅。碳化硅中的28Si的富集水平可以为99％以上。碳化硅可以是SiC烧结体，CVD-SiC，SiC纤维和SiC / SiC复合体中的至少任一种的形式。

6. 发明公开

EP2749531A4 SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SAME 有权
标题翻译：碳化硅粉及其制备方法
公开(公告)号：EP2749531A4
公开(公告)日：2015-05-13
申请号：EP12825897
申请日：2012-08-23
申请人： TAIHEIYO CEMENT CORP
发明人： MASUDA KENTA , ICHITSUBO KOUKI , KAWANO KOHEI , SUZUKI MASAKAZU , KUMASAKA ATSUSHI , TANAKA HIDEAKI
IPC分类号： C01B31/36
CPC分类号： C01B31/36 , B82Y30/00 , C01B32/956 , C04B35/573 , C04B35/62695 , C04B2235/3418 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/5427 , C04B2235/5454 , C04B2235/549 , C04B2235/72 , C04B2235/727
摘要： Provided is a high-purity silicon carbide powder and its production method enabling mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production 1 in an Acheson furnace 4 using a heat generator 2. The raw material for silicon carbide production 1 is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production 1 contains the siliceous rawmaterial and the carbonaceous rawmaterial at a mixture mole ratio (C/SiO 2 ) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.

7. 发明公开

EP2598438A2 SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：硅及其制造方法
公开(公告)号：EP2598438A2
公开(公告)日：2013-06-05
申请号：EP11812738.0
申请日：2011-07-25
申请人： LG Innotek Co., Ltd.
发明人： HAN, Jung Eun , KIM, Byung Sook
IPC分类号： C01B31/36 , C04B35/565 , C04B35/634
CPC分类号： C01B31/36 , C01B32/956 , C04B35/573 , C04B2235/3418 , C04B2235/422 , C04B2235/424 , C04B2235/48
摘要： Provided is a method for manufacturing silicon carbide. The method includes mixing a dry silicon source, a solid carbon source, and a binder with each other and heating the mixed source to form silicon carbide.

8. 发明公开

EP2075232A2 Method of producing silicon carbide 有权
标题翻译： Verfahren zur Herstellung von Siliciumcarbid
公开(公告)号：EP2075232A2
公开(公告)日：2009-07-01
申请号：EP08254109.5
申请日：2008-12-22
申请人： National Institute for Materials Science , Shin-Etsu Chemical Co., Ltd.
发明人： Tanaka, Hidehiko , Aoki, Yoshitaka
IPC分类号： C01B31/36 , C04B35/571
CPC分类号： C01B31/36 , C01B32/956 , C04B35/565 , C04B35/571 , C04B35/6269 , C04B35/6325 , C04B2235/3289 , C04B2235/3826 , C04B2235/483 , C04B2235/5436 , C04B2235/602 , C04B2235/723 , C04B2235/79 , C04B2235/9661
摘要： A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500°C but not more than 2,600°C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions.
摘要翻译：提供了生产碳化硅的方法。该方法包括在非氧化性气氛中在超过1500℃但不高于2600℃的温度下加热可固化的有机硅组合物的固化产物。该方法能够简单地且以高生产率生产高纯度碳化硅，并且能够简单地制造具有期望的形状和尺寸的碳化硅模制品。

9. 发明授权

EP2935099B1 PROCÉDÉ POUR LE CONTRÔLE DE LA PRODUCTION DE NANOPOUDRE DE DIAMÈTRE DONNÉ À PARTIR D'AU MOINS D'ACÉTYLÈNE CONTENU DANS UNE BOUTEILLE PRESSURISÉE 有权
标题翻译：方法用于控制与至少一个乙炔一定直径的纳米粉末的制造在压力负载辊
公开(公告)号：EP2935099B1
公开(公告)日：2017-05-31
申请号：EP13814946.3
申请日：2013-12-20
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： MASKROT, Hicham , GUIZARD, Benoît , ATMAN, Youssef
IPC分类号： C01B32/956 , B82Y40/00 , G01N15/02 , G01N15/00
CPC分类号： C01B31/36 , B82Y40/00 , C01B32/956 , G01N15/0205 , G01N21/55 , G01N2015/0038

10. 发明公开

EP3015428A4 SILICON CARBIDE POWDER 有权
标题翻译： SILICIUMCARBIDPULVER
公开(公告)号：EP3015428A4
公开(公告)日：2016-05-04
申请号：EP14817205
申请日：2014-06-20
申请人： BRIDGESTONE CORP
发明人： HASE KAZUHITO
IPC分类号： C01B31/36
CPC分类号： C01B31/36 , C01B32/956

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