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1. 发明公开

EP3195358A4 DIE WITH INTEGRATED MICROPHONE DEVICE USING THROUGH-SILICON VIAS (TSVs) 审中-公开
公开(公告)号：EP3195358A4
公开(公告)日：2018-04-25
申请号：EP14901871
申请日：2014-09-17
申请人： INTEL CORP
发明人： LEE KEVIN J , SARASWAT RUCHIR , ZILLMANN UWE , RAO VALLURI BOB , LUND-LARSEN TOR , COWLEY NICHOLAS P
IPC分类号： H01L27/04 , B81B7/02 , H01L21/60
CPC分类号： H04R1/04 , B81B7/02 , B81B2201/0257 , B81B2207/096 , B81C1/00158 , B81C2201/0132 , B81C2203/0109 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/131 , H01L2224/16227 , H01L2224/27002 , H01L2224/27618 , H01L2224/27848 , H01L2224/29011 , H01L2224/2919 , H01L2224/3201 , H01L2224/32058 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/83005 , H01L2224/83193 , H01L2224/83438 , H01L2224/8346 , H01L2224/83488 , H01L2224/8359 , H01L2224/83688 , H01L2224/83862 , H01L2224/92 , H01L2224/9222 , H01L2224/92225 , H01L2924/1461 , H01L2924/15311 , H01L2924/161 , H01L2924/16151 , H01L2924/16152 , H01L2924/163 , H01L2924/166 , H04R1/406 , H04R19/005 , H04R19/04 , H01L2924/014 , H01L2924/0665 , H01L2924/01014 , H01L2924/00014 , H01L2924/00012 , H01L2224/11 , H01L2224/27 , H01L2224/83 , H01L2224/81 , H01L2221/68304
摘要： Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.

2. 发明公开

EP3296254A1 MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE MANUFACTURING METHOD, AND MEMS INFRARED DETECTOR 审中-公开
标题翻译： MEMS双层悬浮微结构制造方法和MEMS红外探测器
公开(公告)号：EP3296254A1
公开(公告)日：2018-03-21
申请号：EP16792161.8
申请日：2016-05-10
申请人： CSMC Technologies Fab2 Co., Ltd.
发明人： JING, Errong
IPC分类号： B81B7/02 , B81C1/00
CPC分类号： B81C1/00182 , B81B7/02 , B81B2201/0207 , B81C1/00 , B81C1/0015 , B81C1/00476 , B81C2201/0108 , B81C2201/0109 , B81C2201/0132 , G01J5/20
摘要： An MEMS double-layer suspension microstructure manufacturing method, comprising: providing a substrate (100); forming a first dielectric layer (200) on the substrate (100); patterning the first dielectric layer (200) to prepare a first film body (210) and a cantilever beam (220) connected to the first film body (210); forming a sacrificial layer (300) on the first dielectric layer (200); patterning the sacrificial layer (300) located on the first film body (210) to make a recess portioned portion (310) for forming a support structure (420), with the first film body (210) being exposed at the bottom of the recess portioned portion (310); forming a second dielectric layer (400) on the sacrificial layer (300); patterning the second dielectric layer (400) to make the second film body (410) and the support structure (420), with the support structure (420) being connected to the first film body (210) and the second film body (410); and removing part of the substrate under the first film body (210) and removing the sacrificial layer (300) to obtain the MEMS double-layer suspension microstructure. In addition, an MEMS infrared detector is also disclosed.
摘要翻译：一种MEMS双层悬浮微结构制造方法，包括：提供衬底（100）; 在衬底（100）上形成第一介电层（200）; 图案化所述第一介电层（200）以制备连接到所述第一膜体（210）的第一膜体（210）和悬臂梁（220）; 在第一介电层（200）上形成牺牲层（300）; 图案化位于第一膜体（210）上的牺牲层（300）以形成用于形成支撑结构（420）的凹陷部分（310），其中第一膜体（210）暴露在凹陷的底部分部分（310）; 在牺牲层（300）上形成第二介电层（400）; （420）连接到第一膜体（210）和第二膜体（410），图案化第二电介质层（400）以制造第二膜体（410）和支撑结构（420） ; 去除所述第一膜体下方的部分衬底，去除所述牺牲层，得到MEMS双层悬浮微结构。另外，还公开了一种MEMS红外探测器。

3. 发明公开

EP3294664A1 A MULTI-LEVEL MICROMECHANICAL STRUCTURE 审中-公开
公开(公告)号：EP3294664A1
公开(公告)日：2018-03-21
申请号：EP16725234
申请日：2016-05-09
申请人： MURATA MANUFACTURING CO
发明人： IIHOLA ANTTI , TORKKELI ALTTI , RYTKOENEN VILLE PEKKA , LIUKKU MATTI
IPC分类号： B81B3/00
CPC分类号： B81B3/0021 , B81B3/0094 , B81B2201/0235 , B81B2201/0242 , B81B2203/0136 , B81B2203/04 , B81C1/00357 , B81C2201/0112 , B81C2201/0132
摘要： The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

4. 发明公开

EP3237326A4 METHOD FOR FABRICATING SUSPENDED MEMS STRUCTURES 审中-公开
公开(公告)号：EP3237326A4
公开(公告)日：2018-01-24
申请号：EP16780394
申请日：2016-01-05
申请人： US GOV SEC NAVY
发明人： MEYER DAVID J , DOWNEY BRIAN P
IPC分类号： B81C1/00 , B81B7/00 , B81B7/02 , H01L27/04
CPC分类号： B81C1/00539 , B81C1/00936 , B81C2201/0107 , B81C2201/0132 , B81C2201/0143 , B81C2201/0159 , B81C2201/0177
摘要： A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

5. 发明授权

EP2995586B1 RELEASE CHEMICAL PROTECTION FOR INTEGRATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) AND MICRO-ELECTRO-MECHANICAL (MEMS) DEVICES 有权
公开(公告)号：EP2995586B1
公开(公告)日：2018-01-10
申请号：EP15183869
申请日：2015-09-04
申请人： INVENSENSE INC
发明人： DANEMAN MICHAEL J , ASSADERAGHI FARIBORZ
IPC分类号： B81C1/00
CPC分类号： B81C1/00246 , B81B7/0025 , B81B7/007 , B81B2207/015 , B81C1/00531 , B81C1/00539 , B81C1/00801 , B81C2201/0132 , B81C2201/0133 , B81C2201/053 , B81C2203/0735
摘要： Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electromechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical.

6. 发明公开

EP3210935A1 A METHOD OF MANUFACTURING A PLURALITY OF THROUGH-HOLES IN A LAYER OF MATERIAL 审中-公开
标题翻译：一种在材料层中制造多个通孔的方法
公开(公告)号：EP3210935A1
公开(公告)日：2017-08-30
申请号：EP17158193.7
申请日：2017-02-27
申请人： Universiteit Twente
发明人： BERENSCHOT, Johan Willem , TAS, Niels Roelof
IPC分类号： B81C1/00
CPC分类号： B81B1/004 , B81B2201/057 , B81B2203/0118 , B81B2203/0315 , B81B2203/0361 , B81B2203/0369 , B81C1/00087 , B81C1/00111 , B81C2201/0132
摘要： A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises
- after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210),
- etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281),
- depositing a second layer of material (240) on the base material in the cavity (280), and
- subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask.
摘要翻译：一种在材料层中制造多个通孔（132）的方法，通过对该层进行定向干法蚀刻以在该材料层中提供通孔（132）对于批量生产，该方法包括： - 在基材上提供一层第一材料（220），并在定向干法刻蚀步骤之前，在凹坑（210）的中心位置处提供多个孔， - 在凹坑（210）的中心位置蚀刻基材以形成具有孔（281）的空腔（280）; - 在空腔（280）中的基材上沉积第二材料层（240），以及 - 使用孔（281）作为荫罩的开口（141），使空腔（280）中的第二材料层（240）经受定向干法蚀刻的所述步骤。

7. 发明公开

EP3195358A1 DIE WITH INTEGRATED MICROPHONE DEVICE USING THROUGH-SILICON VIAS (TSVs) 审中-公开
标题翻译：带有集成麦克风装置的硅通孔硅通孔硅（TSV）
公开(公告)号：EP3195358A1
公开(公告)日：2017-07-26
申请号：EP14901871.5
申请日：2014-09-17
申请人： Intel Corporation
发明人： LEE, Kevin J. , SARASWAT, Ruchir , ZILLMANN, Uwe , RAO, Valluri Bob , LUND-LARSEN, Tor , COWLEY, Nicholas P.
IPC分类号： H01L27/04 , H01L21/60 , B81B7/02
CPC分类号： H04R1/04 , B81B7/02 , B81B2201/0257 , B81B2207/096 , B81C1/00158 , B81C2201/0132 , B81C2203/0109 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/131 , H01L2224/16227 , H01L2224/27002 , H01L2224/27618 , H01L2224/27848 , H01L2224/29011 , H01L2224/2919 , H01L2224/3201 , H01L2224/32058 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/83005 , H01L2224/83193 , H01L2224/83438 , H01L2224/8346 , H01L2224/83488 , H01L2224/8359 , H01L2224/83688 , H01L2224/83862 , H01L2224/92 , H01L2224/9222 , H01L2224/92225 , H01L2924/1461 , H01L2924/15311 , H01L2924/161 , H01L2924/16151 , H01L2924/16152 , H01L2924/163 , H01L2924/166 , H04R1/406 , H04R19/005 , H04R19/04 , H01L2924/014 , H01L2924/0665 , H01L2924/01014 , H01L2924/00014 , H01L2924/00012 , H01L2224/11 , H01L2224/27 , H01L2224/83 , H01L2224/81 , H01L2221/68304
摘要： Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例描述了具有使用硅通孔（TSV）和相关技术和配置的集成麦克风装置的裸片。在一个实施例中，一种设备包括装置，该装置包括具有第一侧和与第一侧相对设置的第二侧的半导体衬底，形成在半导体衬底的第一侧上的互连层，形成的硅通孔（TSV）通过半导体衬底并且被配置为在半导体衬底的第一侧和半导体衬底的第二侧之间路由电信号，以及形成在半导体衬底的第二侧上并且与TSV电耦合的麦克风器件。其他实施例可以被描述和/或要求保护。

8. 发明公开

EP3024777A4 METHOD OF MAKING A NANOSTRUCTURE AND NANOSTRUCTURED ARTICLES 审中-公开
标题翻译：一种用于生产纳米结构与纳米结构产品
公开(公告)号：EP3024777A4
公开(公告)日：2017-01-11
申请号：EP14829850
申请日：2014-07-23
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： DAVID MOSES M , YU TA-HUA , BATES DANIEL S , SETH JAYSHREE , BERGER MICHAEL S , FRANKE CARSTEN , ZEHENTMAIER SEBASTIAN F
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： C23C16/0245 , B81C1/00031 , B81C2201/0132 , C09J7/22 , C09J2201/606 , C23C16/50 , H01J37/32082 , H01J37/32541 , H01J2237/3321 , H01J2237/3341
摘要： A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, metal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared.

9. 发明授权

EP1618064B1 METHOD OF MANUFACTURING A MICRO-MECHANICAL ELEMENT 有权转让
标题翻译： PROCESS微机械结构的
公开(公告)号：EP1618064B1
公开(公告)日：2016-06-08
申请号：EP04729453.3
申请日：2004-04-26
申请人： CAVENDISH KINETICS LIMITED
发明人： VAN KAMPEN, Robert , SMITH, Charles, Gordon , LUO, Jack , WEEKS, Andrew John
IPC分类号： B81C1/00
CPC分类号： B81C1/0015 , B81C2201/0109 , B81C2201/0132 , H01H59/0009

10. 发明授权

EP1770056B1 Method for manufacturing a micro-electro-mechanical structure 失效
标题翻译：一种制造微机电结构的方法
公开(公告)号：EP1770056B1
公开(公告)日：2015-11-11
申请号：EP06076692.0
申请日：2006-09-07
申请人： Delphi Technologies, Inc.
发明人： Chilcott, Dan W.
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81C1/00531 , B81B2203/033 , B81C2201/0132 , B81C2201/0142

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