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1. 发明公开

EP1770056A3 Method for manufacturing a micro-electro-mechanical structure 失效
标题翻译：一种制造微机电结构的方法
公开(公告)号：EP1770056A3
公开(公告)日：2008-09-10
申请号：EP06076692.0
申请日：2006-09-07
申请人： Delphi Technologies, Inc.
发明人： Chilcott, Dan W.
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81C1/00531 , B81B2203/033 , B81C2201/0132 , B81C2201/0142
摘要： A technique (500) for manufacturing a micro-electro-mechanical (MEM) structure includes a number of steps. Initially, a substrate is provided (502). Next, a plurality of trenches are etched into the substrate with a first etch (508). Then, a charging layer is formed at a bottom of each of the trenches to form undercut trenches (510). Finally, a second etch is provided into the undercut trenches. The charging layer causes the second etch to laterally etch foots in the substrate between the undercut trenches (512). The footers undercut the substrate to release a portion of the substrate for providing a movable structure between the undercut trenches and above the footers.

2. 发明授权

EP1211219B1 Process for manufacturing micromechanical and microoptomechanical structures with backside metalization 有权
标题翻译：一种用于制备具有背侧金属化的微机械和microoptomechanical结构过程
公开(公告)号：EP1211219B1
公开(公告)日：2007-05-16
申请号：EP01128160.7
申请日：2001-11-27
申请人： MICROSCAN SYSTEMS INCORPORATED , Xerox Corporation
发明人： Scharf, Bruce R. , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T. , Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang
IPC分类号： B81B3/00
CPC分类号： B81C1/00484 , B81B2201/042 , B81B2203/0118 , B81C1/00666 , B81C2201/0142

3. 发明授权

EP1770056B1 Method for manufacturing a micro-electro-mechanical structure 失效
标题翻译：一种制造微机电结构的方法
公开(公告)号：EP1770056B1
公开(公告)日：2015-11-11
申请号：EP06076692.0
申请日：2006-09-07
申请人： Delphi Technologies, Inc.
发明人： Chilcott, Dan W.
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81C1/00531 , B81B2203/033 , B81C2201/0132 , B81C2201/0142

4. 发明公开

EP1211219A3 Process for manufacturing micromechanical and microoptomechanical structures with backside metalization 有权
标题翻译：一种用于制备具有背侧金属化的微机械和microoptomechanical结构过程
公开(公告)号：EP1211219A3
公开(公告)日：2004-06-16
申请号：EP01128160.7
申请日：2001-11-27
申请人： MICROSCAN SYSTEMS INCORPORATED , XEROX CORPORATION
发明人： Scharf, Bruce R. , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T. , Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang
IPC分类号： B81B3/00
CPC分类号： B81C1/00484 , B81B2201/042 , B81B2203/0118 , B81C1/00666 , B81C2201/0142
摘要： The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.

5. 发明公开

EP1095401A1 VERFAHREN ZUM ANISOTROPEN PLASMAÄTZEN VON HALBLEITERN 有权
标题翻译：方法用于半导体的各向异性等离子体蚀刻
公开(公告)号：EP1095401A1
公开(公告)日：2001-05-02
申请号：EP00931030.1
申请日：2000-04-26
申请人： ROBERT BOSCH GMBH
发明人： LAERMER, Franz , SCHILP, Andrea
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： B81C1/00626 , B81C99/0065 , B81C2201/0132 , B81C2201/0142 , H01L21/3065 , H01L21/30655
摘要： The invention relates to a method for the anisotropic etching of structures on a semiconductor body, in particular for etching recesses in a silicon body (18) which are defined laterally in a precise manner by an etching mask, using a plasma (28). An ion-accelerator voltage is applied to the semiconductor, at least during an etching step which continues for a predetermined period. Said ion-accelerator voltage is induced, in particular, by a high-frequency alternating current. The duration of the etching step is subdivided further into at least two etching periods, between which the applied ion-accelerator voltage is modified. A preferred embodiment contains two etching periods, whereby a higher accelerator voltage is used during the first etching period than during the second etching period. The duration of the first etching period can also be determined dynamically or statically during the etching steps using a device for detecting a polymer breakthrough. In addition, high frequency pulses or pulse packets with an adjustable pulse-pause ratio are preferably used to generate and adjust the level of the accelerator voltage.

6. 发明公开

EP2682363A1 Method for producing a mems device including a vapour release step 审中-公开
标题翻译： Verfahren zur Herstellung einer MEMS-Vorrichtung mit Dampffreisetzungsschritt
公开(公告)号：EP2682363A1
公开(公告)日：2014-01-08
申请号：EP12175390.9
申请日：2012-07-06
申请人： IMEC , NXP B.V.
发明人： Boccardi, Guillaume , Du Bois, Bert
IPC分类号： B81C1/00
CPC分类号： B81C1/00476 , B81B2201/0257 , B81C1/00595 , B81C2201/0132 , B81C2201/0142 , B81C2201/0177 , B81C2201/053
摘要： The present invention is related to a method for producing a Micro-Electromechanical System (MEMS) device, comprising:
- Depositing a sacrificial oxide layer on a substrate,
- Depositing one or more structural layers on said sacrificial oxide layer and patterning said structural layers to form a structure,
- Removing the sacrificial layer by vapour etching,
to thereby release a portion of said structure,

wherein the step of depositing a sacrificial oxide layer comprises depositing a first layer (7) of a first sacrificial oxide having a first density, and depositing on said first layer a second layer (8) of a second sacrificial oxide, the second layer having a higher density than the first layer. The method allows to protect a first structural layer deposited on and in contact with the second sacrificial oxide layer, said vapour etching step having low selectivity of said first structural layer towards said first sacrificial oxide layer. Said first structural layer may be a silicon nitride layer protecting the backplate of a MEMS microphone.
摘要翻译：本发明涉及一种用于制造微机电系统（MEMS）器件的方法，包括： - 在衬底上沉积牺牲氧化物层， - 在所述牺牲氧化物层上沉积一个或多个结构层，并将所述结构层图案化形成结构， - 通过蒸汽蚀刻去除牺牲层，从而释放所述结构的一部分，其中沉积牺牲氧化物层的步骤包括沉积具有第一密度的第一牺牲氧化物的第一层（7），以及在所述第一层上沉积第二牺牲氧化物的第二层（8），所述第二层具有比所述第一层更高的密度。该方法允许保护沉积在第二牺牲氧化物层上并与第二牺牲氧化物层接触的第一结构层，所述蒸气蚀刻步骤具有所述第一结构层朝向所述第一牺牲氧化物层的低选择性。所述第一结构层可以是保护MEMS麦克风的背板的氮化硅层。

7. 发明公开

EP1770056A2 Method for manufacturing a micro-electro-mechanical structure 失效
标题翻译： Verfahren zum Herstellen einer mikroelectromechanischen Struktur
公开(公告)号：EP1770056A2
公开(公告)日：2007-04-04
申请号：EP06076692.0
申请日：2006-09-07
申请人： Delphi Technologies, Inc.
发明人： Chilcott, Dan W.
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81C1/00531 , B81B2203/033 , B81C2201/0132 , B81C2201/0142
摘要： A technique (500) for manufacturing a micro-electro-mechanical (MEM) structure includes a number of steps. Initially, a substrate is provided (502). Next, a plurality of trenches are etched into the substrate with a first etch (508). Then, a charging layer is formed at a bottom of each of the trenches to form undercut trenches (510). Finally, a second etch is provided into the undercut trenches. The charging layer causes the second etch to laterally etch foots in the substrate between the undercut trenches (512). The footers undercut the substrate to release a portion of the substrate for providing a movable structure between the undercut trenches and above the footers.
摘要翻译：用于制造微机电（MEM）结构的技术（500）包括多个步骤。首先，提供基板（502）。接下来，通过第一蚀刻（508）将多个沟槽蚀刻到衬底中。然后，在每个沟槽的底部形成充电层以形成底切槽（510）。最后，在底切沟槽中提供第二蚀刻。充电层使得第二蚀刻在底切沟槽（512）之间横向蚀刻衬底中的脚。底脚底切基板以释放基板的一部分，以在底切沟槽和页脚之上提供可移动结构。

8. 发明公开

EP1556307A1 METHOD FOR MANUFACTURING A MICRO-ELECTROMECHANICAL DEVICE AND MICRO-ELECTROMECHANICAL DEVICE OBTAINED THEREWITH 审中-公开
标题翻译：方法用于生产具有这产生微机电器件微机电装置及方法
公开(公告)号：EP1556307A1
公开(公告)日：2005-07-27
申请号：EP03751132.6
申请日：2003-10-17
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN BEEK, Jozef, T., M. , VAN GROOTEL, Margot
IPC分类号： B81C1/00
CPC分类号： B81C1/00595 , B81B2203/0323 , B81C2201/0142
摘要： The invention relates to a method of manufacturing a micro-electromechanical device ( 10 ), in which are consecutively deposited on a substrate ( 1 ) a first electroconductive layer ( 2 ) in which an electrode ( 2 A) is formed, a first electroinsulating layer ( 3 ) of a first material, a second electroinsulating layer ( 4 ) of a second material different from the first material, and a second electroconductive layer ( 5 ) in which a second electrode ( 5 A) lying opposite the first electrode is formed which together with the first electrode ( 2 A) and the first insulating layer ( 3 ) forms the device ( 10 ), in which after the second conductive layer ( 5 ) deposited, the second insulating layer ( 4 ) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer ( 5 ). According to the invention for the first material and the second material materials are selected which are only limitedly selectively etchable with respect to each other and before depositing the second insulating layer ( 4 ) a further layer ( 6 ) is provided on top of the first insulating layer ( 3 ) of a further material that is selectively etchable with respect to the first material. In this way a silicon oxide and a silicon nitride may be applied for the insulating layers ( 3, 4 ) and thus the method according to the invention is very compatible with current IC processes. The second insulating layer ( 4 ) is preferably removed locally by etching, then the further layer ( 6 ) is completely removed by etching and, finally, the second insulating layer ( 4 ) is completely removed by etching.

9. 发明公开

EP3150548A4 MEMS-BASED METHOD FOR MANUFACTURING SENSOR 有权转让
公开(公告)号：EP3150548A4
公开(公告)日：2018-01-03
申请号：EP15800029
申请日：2015-05-05
申请人： CSMC TECHNOLOGIES FAB1 CO LTD
发明人： HU YONGGANG , ZHOU GUOPING
IPC分类号： B81C1/00
CPC分类号： B81C1/00619 , B81C1/00 , B81C2201/0133 , B81C2201/0142
摘要： An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

10. 发明授权

EP1095401B1 VERFAHREN ZUM ANISOTROPEN PLASMAÄTZEN VON HALBLEITERN 有权
标题翻译：方法用于半导体的各向异性等离子体蚀刻
公开(公告)号：EP1095401B1
公开(公告)日：2007-11-14
申请号：EP00931030.1
申请日：2000-04-26
申请人： ROBERT BOSCH GMBH
发明人： LAERMER, Franz , SCHILP, Andrea
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： B81C1/00626 , B81C99/0065 , B81C2201/0132 , B81C2201/0142 , H01L21/3065 , H01L21/30655
摘要： The invention relates to a method for the anisotropic etching of structures on a semiconductor body, in particular for etching recesses in a silicon body (18) which are defined laterally in a precise manner by an etching mask, using a plasma (28). An ion-accelerator voltage is applied to the semiconductor, at least during an etching step which continues for a predetermined period. Said ion-accelerator voltage is induced, in particular, by a high-frequency alternating current. The duration of the etching step is subdivided further into at least two etching periods, between which the applied ion-accelerator voltage is modified. A preferred embodiment contains two etching periods, whereby a higher accelerator voltage is used during the first etching period than during the second etching period. The duration of the first etching period can also be determined dynamically or statically during the etching steps using a device for detecting a polymer breakthrough. In addition, high frequency pulses or pulse packets with an adjustable pulse-pause ratio are preferably used to generate and adjust the level of the accelerator voltage.

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