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1. 发明授权

EP3249081B1 FILM FORMING METHOD FOR METAL FILM AND FILM FORMING APPARATUS THEREFOR 有权
公开(公告)号：EP3249081B1
公开(公告)日：2019-03-27
申请号：EP17171596.4
申请日：2017-05-17
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： SATO, Yuki , HIRAOKA, Motoki , IISAKA, Hirofumi
IPC分类号： C25D5/06 , C25D17/00 , C25D17/14 , C25D17/06 , C25D3/00 , C25D3/38

2. 发明公开

EP3036357A2 FILM FORMATION SYSTEM AND FILM FORMATION METHOD FOR FORMING METAL FILM 有权
标题翻译：成膜装置及成膜方法用于生产金属膜
公开(公告)号：EP3036357A2
公开(公告)日：2016-06-29
申请号：EP14789355.6
申请日：2014-08-20
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： HIRAOKA, Motoki , YANAGIMOTO, Hiroshi , SATO, Yuki
IPC分类号： C25D5/08 , C25D17/00 , C25D17/12 , C25D21/04
CPC分类号： C25D5/04 , C25D3/00 , C25D5/08 , C25D5/22 , C25D17/00 , C25D17/002 , C25D17/007 , C25D17/12 , C25D17/14 , C25D21/04
摘要： A solid electrolyte membrane (13) is arranged on a surface of an anode (11) between the anode (11) and a substrate (B) that serves as a cathode. The solid electrolyte membrane (13) is brought into contact with the substrate (B). At the same time, a metal film (F) is formed on the surface of the substrate (B) by causing metal to precipitate onto the surface of the substrate (B) from metal ions through application of voltage between the anode (11) and the substrate (B) in a first contact state where the solid electrolyte membrane (13) contacts the substrate (B). The metal ions are contained inside the solid electrolyte membrane (13).

3. 发明授权

EP2818585B1 FILM FORMATION DEVICE AND FILM FORMATION METHOD FOR FORMING METAL FILM 有权
公开(公告)号：EP2818585B1
公开(公告)日：2019-11-27
申请号：EP13751478.2
申请日：2013-02-21
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： HIRAOKA, Motoki , YANAGIMOTO, Hiroshi , SATO, Yuki , YOSHIOKA, Takayasu
IPC分类号： C25D17/12 , C25D3/00 , C25D5/02 , C25D5/34 , C25D5/08 , C25D17/00 , C25D17/14 , C25D3/38

4. 发明授权

EP3105369B1 METHOD OF FORMING METAL COATING 有权
公开(公告)号：EP3105369B1
公开(公告)日：2019-03-27
申请号：EP15708571.3
申请日：2015-02-09
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： YANAGIMOTO, Hiroshi , HIRAOKA, Motoki , SATO, Yuki , SHINMEI, Yoshitaka
IPC分类号： C25D3/00 , C25D5/02 , C25D5/18 , C25D5/06 , C25D17/12 , C25D17/14 , C25D17/00 , C25D5/12 , C25D3/12

5. 发明公开

EP1644555A2 RESIN SUBSTRATE HAVING A RESIN-METAL COMPOSITE LAYER AND METHOD FOR MANUFACTURING THEREOF 审中-公开
标题翻译：与树脂的金属复合层与相关方法HARZSUBSRTAT
公开(公告)号：EP1644555A2
公开(公告)日：2006-04-12
申请号：EP04748136.1
申请日：2004-07-22
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： HIRAOKA, Motoki , YOSHINAGA, Fumitaka , DAIZA, Setsuto , BESSHO, Takeshi
IPC分类号： C23C18/31 , C23C18/28
CPC分类号： H05K3/38 , C23C18/08 , C23C18/2033 , C23C18/2086 , C23C18/31 , H05K3/181 , H05K2201/2063 , H05K2203/1152 , Y10T428/25 , Y10T428/26 , Y10T428/31504 , Y10T428/31678
摘要： A resin-metal composite layer is formed by modifying a surface of a resin substrate to a modified layer, contacting the modified layer with a metal compound solution, and adsorbing at least either metal colloids or ions are adsorbed to the polar group, so that metal particles are dispersed into the modified layer. Because of the fineness of the metal particles in the resin-metal composite layer, high transparent can be achieved. The resin-metal composite layer functions as a transparent conductive layer and the like.

6. 发明公开

EP3105369A1 METHOD OF FORMING METAL COATING 有权
标题翻译：一种用于生产METALLBESCHICHTUNG
公开(公告)号：EP3105369A1
公开(公告)日：2016-12-21
申请号：EP15708571.3
申请日：2015-02-09
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： YANAGIMOTO, Hiroshi , HIRAOKA, Motoki , SATO, Yuki , SHINMEI, Yoshitaka
IPC分类号： C25D3/00 , C25D5/02 , C25D5/18 , C25D5/06 , C25D17/12 , C25D17/14 , C25D17/00 , C25D5/12 , C25D3/12
CPC分类号： C25D5/18 , C25D3/00 , C25D3/12 , C25D5/02 , C25D5/06 , C25D5/12 , C25D17/001 , C25D17/12 , C25D17/14
摘要： A method of forming a metal coating includes: disposing a solid electrolyte membrane (13) between an anode (11) and a substrate (B) which forms a cathode; bringing a solution (L) containing metal ions into contact with an anode-side portion of the solid electrolyte membrane (13); and causing, in a state where the solid electrolyte membrane (13) is in contact with the substrate (B), a current to flow from the anode (11) to the cathode so as to form a metal coating formed of the metal on the surface of the substrate (B). The metal coating is formed by repeating a current-flowing period (T) in which a current flows from the anode (11) to the cathode and a non-current-flowing period (N) in which a current does not flow between the anode (11) and the cathode.

7. 发明公开

EP3070191A1 FILM FORMING APPARATUS FOR METAL COATING FILM AND FILM FORMING METHOD THEREFOR 有权
标题翻译： FILMBILDENDE VORRICHTUNGFÜREINEN METALLBESCHICHTUNGSFILM UND FILMBILDUNGSVERFAHRENDAFÜR
公开(公告)号：EP3070191A1
公开(公告)日：2016-09-21
申请号：EP14861239.3
申请日：2014-11-12
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： HIRAOKA, Motoki , YANAGIMOTO, Hiroshi , SATO, Yuki
IPC分类号： C25D17/00 , C25D13/00
CPC分类号： C25D5/06 , C25D3/00 , C25D17/00 , C25D17/002 , C25D17/005 , C25D17/14
摘要： Provided is film formation apparatus of a metal film and a film formation method therefor capable of forming a homogeneous metal film of a uniform thickness stably, while being less affected by the surface state of the anode. A film formation apparatus 1A includes: an anode 11; a solid electrolyte membrane 13 disposed between the anode 11 and a base B serving as a cathode; and a power supply unit 14 to apply voltage between the anode 11 and the base B, the film formation apparatus being configured so that, when the solid electrolyte membrane 13 is brought into contact with a surface of the base B, and voltage is applied between the anode 11 and the base B, metal is deposited on the surface of the base B from metal ions included inside of the solid electrolyte membrane 13, so that the metal film F made of the metal is formed. The film formation apparatus 1A includes a mounting base 21 on which the base B is to be placed, and the mounting base 21 has a suction unit 22 to suck the solid electrolyte membrane 13 from a side of the base B so that the solid electrolyte membrane 13 is brought into intimate contact with the surface of the base B during formation of the metal film F.
摘要翻译：提供一种金属膜的成膜装置及其成膜方法，能够稳定地形成均匀厚度均匀的金属膜，同时受到阳极表面状态的影响较小。成膜装置1A包括：阳极11; 设置在阳极11和用作阴极的基体B之间的固体电解质膜13; 以及在阳极11和基体B之间施加电压的电源单元14，成膜装置被构造成使得当固体电解质膜13与基体B的表面接触时，阳极11和基底B，金属由固体电解质膜13内部的金属离子沉积在基体B的表面上，形成由金属制成的金属膜F. 成膜装置1A包括：安装基座21，其上放置有基座B;安装基座21具有吸引单元22，用于从基座B侧吸取固体电解质膜13，使固体电解质膜 13在金属膜F的形成期间与基体B的表面紧密接触。

8. 发明公开

EP3021357A1 METHOD OF JOINING A SEMICONDUCTOR ELEMENT TO A JOINED MEMBER BY REACTING A TIN-CONTAINING SOLDER MATERIAL WITH A COPPER LAYER ON THE JOINED MEMBER AND CORRESPONDING SEMICONDUCTOR DEVICE 审中-公开
标题翻译： METHOD FOR连接半导体组件与组件连接由于反应PEAKS THAL Tenden焊料材料与铜层上的连接部件和适当的半导体器件
公开(公告)号：EP3021357A1
公开(公告)日：2016-05-18
申请号：EP15192112.9
申请日：2015-10-29
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： KADOGUCHI, Takuya , YANAGIMOTO, Hiroshi , HIRAOKA, Motoki
IPC分类号： H01L23/492 , H01L23/488 , H01L21/60
CPC分类号： H01L24/16 , B23K35/262 , C22C13/00 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L2224/04026 , H01L2224/05155 , H01L2224/05647 , H01L2224/16245 , H01L2224/16502 , H01L2224/291 , H01L2224/29111 , H01L2224/32245 , H01L2224/32503 , H01L2224/33181 , H01L2224/81805 , H01L2224/83447 , H01L2224/8381 , H01L2224/83815 , H01L2924/014 , H01L2924/181 , H01L2924/01029 , H01L2924/00014 , H01L2924/01028 , H01L2924/01015 , H01L2924/01083 , H01L2924/01051 , H01L2924/01047 , H01L2924/00012
摘要： A method of manufacturing a semiconductor device (100) includes: arranging a solder material (4) containing at least tin between a semiconductor element (6) and a joined member (2) provided with a nickel layer (2a) and a copper layer (22) such that the solder material (4) is in contact with the copper layer (22), the nickel layer (2a) being provided on a surface of the joined member (2), and the copper layer (22) being provided on at least a portion of a surface of the nickel layer (2a); and melting and solidifying the solder material (4) to form Cu 6 Sn 5 (4b) on the surface of the nickel layer (2a) using tin of the solder material (4) and the copper layer (22). The solder material (4) may be a tin solder or a tin-copper solder, preferably a Sn-0.7Cu solder.
摘要翻译：一种制造半导体器件（100）的方法，包括：布置（4）含有具有镍层（2a）的半导体元件（6）和一个接合件（2）和铜层之间的至少锡的焊料材料（ 22）检查确实设置在所述钎焊材料（4）是（与铜层22接触），镍层（2a）中设置接合构件（2）的表面上，和铜层（22）至少镍层（2a）的一个表面的一部分; 和熔化和固化焊料材料（4），以形成的Cu 6 Sn的5（4b）中使用焊料材料（4）和铜层（22）的锡镍层（2a）的表面上。钎焊材料（4）可以是锡焊料或锡 - 铜焊料，优选具有Sn-0.7Cu钎焊料。

9. 发明公开

EP2980281A1 APPARATUS AND METHOD FOR FORMING METAL COATING FILM 有权
标题翻译：用于形成金属涂层膜的装置和方法
公开(公告)号：EP2980281A1
公开(公告)日：2016-02-03
申请号：EP14774595.4
申请日：2014-02-04
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： SATO, Yuki , HIRAOKA, Motoki , YANAGIMOTO, Hiroshi
IPC分类号： C25D17/00 , C25D7/12 , C25D3/00 , C25D17/10
CPC分类号： C25D5/00 , C25D3/00 , C25D3/38 , C25D7/00 , C25D17/00 , C25D17/002 , C25D17/10 , C25D17/12
摘要： To provide a film formation apparatus and a film formation method for forming a metal film that can continuously form metal films with desired thickness on the surfaces of a plurality of substrates, and increase the film forming speed while suppressing abnormality of the metal films. A film formation apparatus includes an anode (11); a solid electrolyte membrane (13) disposed between the anode and a substrate (B) serving as a cathode such that a metal ion solution (L) is disposed on the anode (11) side thereof; and a power supply portion (14) adapted to apply a voltage across the anode (11) and the substrate (B). A voltage is applied across the anode (11) and the substrate (B) to deposit metal out of the metal ions contained in the solid electrolyte membrane (13) onto the surface of the substrate (B), thereby forming a metal film (F) made of the metal of the metal ions. The anode (11) has a base material (11a), which is insoluble in the metal ion solution (L), and a metal plating film (11c), which is made of the same metal as the metal film (F), formed over the base material (11a).
摘要翻译：本发明提供一种成膜装置和成膜方法，其能够在多个基板的表面上连续形成所希望的厚度的金属膜，并且能够抑制金属膜的异常并提高成膜速度。成膜装置包括阳极（11）; 配置在阳极与作为阴极的基板（B）之间，在阳极（11）侧配置金属离子溶液（L）的固体电解质膜（13）和适于在阳极（11）和衬底（B）上施加电压的电源部分（14）。在阳极（11）和基板（B）之间施加电压，使固体电解质膜（13）中含有的金属离子中的金属析出到基板（B）的表面，形成金属膜（F ）由金属离子的金属制成。阳极（11）具有不溶于金属离子溶液（L）的基材（11a）和由与金属膜（F）相同的金属构成的金属镀膜（11c）覆盖基材（11a）。

10. 发明公开

EP2818585A1 FILM FORMATION DEVICE AND FILM FORMATION METHOD FOR FORMING METAL FILM 有权
标题翻译： FILMBILDUNGSVORRICHTUNG电影电视节目ZUR HERSTELLUNG VON METALLSCHICHTEN
公开(公告)号：EP2818585A1
公开(公告)日：2014-12-31
申请号：EP13751478.2
申请日：2013-02-21
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： HIRAOKA, Motoki , YANAGIMOTO, Hiroshi , SATO, Yuki , YOSHIOKA, Takayasu
IPC分类号： C25D17/12 , C25D17/14
摘要： Provided are a film formation device and a film formation method for forming a metal film, with which metal films with a desired thickness can be continuously formed on surfaces of a plurality of substrates. A film formation device 1A includes at least a positive electrode 11, a negative electrode 12, a solid electrolyte membrane 13 arranged on a surface of the positive electrode 12, between the positive electrode and a substrate to serve as the negative electrode, and a power supply unit E adapted to apply a voltage across the positive electrode 11 and the substrate B. A voltage is applied across the positive electrode 11 and the substrate B to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane 13, whereby a metal film F made of metal is formed. The positive electrode 11 is made of a porous body that allows a solution L containing metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane 13.
摘要翻译：提供一种用于形成金属膜的成膜装置和成膜方法，可以在多个基板的表面上连续地形成具有所需厚度的金属膜。成膜装置1A至少包括正极11，负极12，布置在正极12的表面上的固体电解质膜13，正极和基板之间用作负极，功率供给单元E适于在正电极11和基板B两端施加电压。在正电极11和基板B两端施加电压，以将固体电解质膜13中所含的金属离子上的金属沉积在基板的表面上由此形成由金属制成的金属膜F. 正极11由允许包含金属离子的溶液L通过并将金属离子供给固体电解质膜13的多孔体制成。

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